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    • 1. 发明授权
    • RC delay circuit for integrated circuits
    • RC延迟电路用于集成电路
    • US5920221A
    • 1999-07-06
    • US892216
    • 1997-07-14
    • Chiun-Chi ShenYen-Tai LinJiang-Hong HoJack-Lian KuoHoward Clayton Kirsch
    • Chiun-Chi ShenYen-Tai LinJiang-Hong HoJack-Lian KuoHoward Clayton Kirsch
    • H03K5/13
    • H03K5/133
    • This invention describes a delay circuit for integrated circuits that has the capability to delay the rising and falling transitions separately and independent of each other. A signal is fed through an RC network to a Schmitt trigger and then through an inverter to the output of the delay circuit. Two MOS transistors are connected as capacitors and in parallel but in opposing directions between the delay circuit output and the input to the Schmitt trigger to form part of the RC network. The biasing of the two transistors is such that the inversion layer capacitance is active in only one transistor for each signal transition. Thus the falling and rising transition of an input signal can be delayed separately. Changing the gate and channel size in one transistor acting as a capacitor changes the delay in one signal transition. Changing the other gate and channel size changes the delay in the other transition. The output of the delay circuit is fed back through the transistor capacitors to hasten the switching of the Schmitt trigger.
    • 本发明描述了一种用于集成电路的延迟电路,其具有分别且彼此独立地延迟上升和下降转换的能力。 信号通过RC网络馈送到施密特触发器,然后通过反相器馈送到延迟电路的输出。 两个MOS晶体管作为电容器并联连接,但是在延迟电路输出和施密特触发器的输入之间是相反的方向,以形成RC网络的一部分。 两个晶体管的偏压使得反向层电容仅在每个信号转变的一个晶体管中有效。 因此,输入信号的下降和上升转换可以分开延迟。 用作电容器的一个晶体管中的栅极和沟道尺寸改变了一个信号转变中的延迟。 改变另一个门和通道大小会改变另一个转换的延迟。 延迟电路的输出通过晶体管电容反馈,以加速施密特触发器的切换。
    • 3. 发明授权
    • Integrated circuit output driver incorporating power distribution noise
suppression circuitry
    • 集成电路输出驱动器,并入功率分配噪声抑制电路
    • US5786709A
    • 1998-07-28
    • US738214
    • 1996-10-25
    • Howard C. KirschYen-Tai LinChiun-chi ShenJiang-Hong HoJack-Lian Kuo
    • Howard C. KirschYen-Tai LinChiun-chi ShenJiang-Hong HoJack-Lian Kuo
    • H03K17/16H03K19/003H03K19/0948
    • H03K17/165H03K17/167H03K19/00361
    • A circuit for the control of a power or ground distribution transient voltage or power bounce or ground bounce is described. The circuit has a driver transistor of a first conductivity type and a driver transistor of a second conductivity type connected so as to be able to transfer a voltage to a data output terminal from a I/O voltage distribution network or a I/O ground distribution network. As the output terminal changes from a logic 1 to a logic 0 the driver transistor of the first conductivity type will conduct and a ground distribution voltage transient will begin to appear. A suppression transistor of the first conductivity type that will begin to conduct to begin cessation of conduction of the driver transistor of the first conductivity type decreasing the slew rate of the driver transistor of the first conductivity type. As the output terminal changes from a logic 0 to a logic 1 the driver transistor of the second conductivity type will conduct and a power distribution voltage transient will begin to appear. A suppression transistor of the second conductivity type that will begin to conduct to begin cessation of conduction of the driver transistor of the second conductivity type decreasing the slew rate of the driver transistor of the second conductivity type. The transistors may be PMOS, NMOS, NPN bipolar, or PNP bipolar integrated upon a silicon or compound semiconductor substrate.
    • 描述了用于控制电源或地面分配瞬态电压或电源反弹或地面反弹的电路。 电路具有第一导电类型的驱动晶体管和第二导电类型的驱动晶体管,其连接成能够将电压从I / O电压分配网络或I / O地面分布传递到数据输出端子 网络。 当输出端从逻辑1变为逻辑0时,第一导电类型的驱动晶体管将导通,并且开始接地配电电压瞬变。 第一导电类型的抑制晶体管将开始导通以开始停止第一导电类型的驱动晶体管的导通,从而降低第一导电类型的驱动晶体管的转换速率。 当输出端子从逻辑0变为逻辑1时,第二导电类型的驱动晶体管将导通,并且将开始出现配电电压瞬变。 第二导电类型的抑制晶体管将开始导通以开始停止第二导电类型的驱动晶体管的导通,从而降低第二导电类型的驱动晶体管的转换速率。 晶体管可以是集成在硅或化合物半导体衬底上的PMOS,NMOS,NPN双极或PNP双极。