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    • 2. 发明申请
    • Semiconductor Device and Method for Fabricating the Same
    • 半导体器件及其制造方法
    • US20160020318A1
    • 2016-01-21
    • US14867423
    • 2015-09-28
    • Sung-Min KimJi-Su KangDong-Kyu LeeDong-Ho Cha
    • Sung-Min KimJi-Su KangDong-Kyu LeeDong-Ho Cha
    • H01L29/78
    • H01L29/785H01L29/66795
    • Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.
    • 提供一种半导体器件及其制造方法。 制造半导体器件的方法包括:提供有源鳍片和场绝缘膜,其包括设置在有源鳍片上的第一沟槽; 通过对设置在所述第一沟槽的侧壁和下部的所述场绝缘膜进行第一蚀刻来形成第二沟槽; 通过对设置在所述第二沟槽的侧壁和下部的所述场绝缘膜进行第二蚀刻,在所述场绝缘膜中形成第一区域和第二区域,所述第一区域邻近所述活性鳍片设置,并且具有 与第一区域相比,第二区域与有效翅片间隔开,并且具有比第一厚度厚的第二厚度; 并在有源鳍片和场绝缘膜上形成栅极结构。
    • 7. 发明申请
    • MONTGOMERY MULTIPLIER HAVING EFFICIENT HARDWARE STRUCTURE
    • 具有有效硬件结构的蒙特卡罗公司
    • US20110231467A1
    • 2011-09-22
    • US13052524
    • 2011-03-21
    • Kyoung-moon AHNYoung-sik KimJong-hoon ShinSun-soo ShinJi-su Kang
    • Kyoung-moon AHNYoung-sik KimJong-hoon ShinSun-soo ShinJi-su Kang
    • G06F7/487G06F7/485
    • G06F7/728
    • A radix-2k Montgomery multiplier including an input coefficient generation unit to receive a multiplier, a multiplicand, a modulus, a sum and a previous sum, to generate and to output a partial product and a multiple modulus by using at least one of the multiplier, the multiplicand, the modulus and the sum, and to divide and to output the received previous sum into units of k bits, an accumulator circuit to receive the partial product, the multiple modulus and k bits of the previous sum from the input coefficient generation unit, and to generate and to output a carry and a sum by summing the partial product, the multiple modulus and the previous sum, and a carry propagation adder (CPA) circuit to generate and to output an ultimate sum by using the carry and the sum.
    • 一个radix-2k蒙哥马利乘数器,其包括用于接收乘法器的输入系数产生单元,乘法器,模数,和和先前和,以通过使用乘法器中的至少一个来产生和输出部分乘积和多重模数 ,被乘数,模数和和,并且将接收的先前和除以并输出到k位的单位,用于接收部分乘积的累加器电路,来自输入系数生成的先前和的多个模数和k个比特 并且通过将部分乘积,多重模量和前一个和相加来产生和输出一个进位和一个和以及一个进位传播加法器(CPA)电路,以通过使用进位和运算来产生和输出最终和 和。
    • 8. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    • 半导体器件及其制造方法
    • US20140357061A1
    • 2014-12-04
    • US14287240
    • 2014-05-27
    • Sung-Min KimJi-Su KangDong-Kyu LeeDong-Ho Cha
    • Sung-Min KimJi-Su KangDong-Kyu LeeDong-Ho Cha
    • H01L29/66
    • H01L29/785H01L29/66795
    • Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.
    • 提供一种半导体器件及其制造方法。 制造半导体器件的方法包括:提供有源鳍片和场绝缘膜,其包括设置在有源鳍片上的第一沟槽; 通过对设置在所述第一沟槽的侧壁和下部的所述场绝缘膜进行第一蚀刻来形成第二沟槽; 通过对设置在所述第二沟槽的侧壁和下部的所述场绝缘膜进行第二蚀刻,在所述场绝缘膜中形成第一区域和第二区域,所述第一区域邻近所述活性鳍片设置,并且具有 与第一区域相比,第二区域与有效翅片间隔开,并且具有比第一厚度厚的第二厚度; 并在有源鳍片和场绝缘膜上形成栅极结构。