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1. 发明授权

US09520499B2 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US09520499B2
公开(公告)日：2016-12-13
申请号：US14867423
申请日：2015-09-28
申请人： Sung-Min Kim , Ji-Su Kang , Dong-Kyu Lee , Dong-Ho Cha
发明人： Sung-Min Kim , Ji-Su Kang , Dong-Kyu Lee , Dong-Ho Cha
IPC分类号： H01L29/78 , H01L29/66
CPC分类号： H01L29/785 , H01L29/66795
摘要： Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.

2. 发明申请

US20160020318A1 Semiconductor Device and Method for Fabricating the Same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160020318A1
公开(公告)日：2016-01-21
申请号：US14867423
申请日：2015-09-28
申请人： Sung-Min Kim , Ji-Su Kang , Dong-Kyu Lee , Dong-Ho Cha
发明人： Sung-Min Kim , Ji-Su Kang , Dong-Kyu Lee , Dong-Ho Cha
IPC分类号： H01L29/78
CPC分类号： H01L29/785 , H01L29/66795
摘要： Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.
摘要翻译：提供一种半导体器件及其制造方法。制造半导体器件的方法包括：提供有源鳍片和场绝缘膜，其包括设置在有源鳍片上的第一沟槽; 通过对设置在所述第一沟槽的侧壁和下部的所述场绝缘膜进行第一蚀刻来形成第二沟槽; 通过对设置在所述第二沟槽的侧壁和下部的所述场绝缘膜进行第二蚀刻，在所述场绝缘膜中形成第一区域和第二区域，所述第一区域邻近所述活性鳍片设置，并且具有与第一区域相比，第二区域与有效翅片间隔开，并且具有比第一厚度厚的第二厚度; 并在有源鳍片和场绝缘膜上形成栅极结构。

3. 发明申请

US20140357061A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140357061A1
公开(公告)日：2014-12-04
申请号：US14287240
申请日：2014-05-27
申请人： Sung-Min Kim , Ji-Su Kang , Dong-Kyu Lee , Dong-Ho Cha
发明人： Sung-Min Kim , Ji-Su Kang , Dong-Kyu Lee , Dong-Ho Cha
IPC分类号： H01L29/66
CPC分类号： H01L29/785 , H01L29/66795
摘要： Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.
摘要翻译：提供一种半导体器件及其制造方法。制造半导体器件的方法包括：提供有源鳍片和场绝缘膜，其包括设置在有源鳍片上的第一沟槽; 通过对设置在所述第一沟槽的侧壁和下部的所述场绝缘膜进行第一蚀刻来形成第二沟槽; 通过对设置在所述第二沟槽的侧壁和下部的所述场绝缘膜进行第二蚀刻，在所述场绝缘膜中形成第一区域和第二区域，所述第一区域邻近所述活性鳍片设置，并且具有与第一区域相比，第二区域与有效翅片间隔开，并且具有比第一厚度厚的第二厚度; 并在有源鳍片和场绝缘膜上形成栅极结构。

4. 发明授权

US09281208B2 Methods of forming semiconductor devices using hard mask layers 有权
标题翻译：使用硬掩模层形成半导体器件的方法
公开(公告)号：US09281208B2
公开(公告)日：2016-03-08
申请号：US14165970
申请日：2014-01-28
申请人： Sung-Min Kim , Ji-Su Kang , Dong-Kyu Lee , Dong-Ho Cha
发明人： Sung-Min Kim , Ji-Su Kang , Dong-Kyu Lee , Dong-Ho Cha
IPC分类号： H01L21/308 , H01L29/66 , H01L29/78 , H01L21/311
CPC分类号： H01L21/3083 , H01L21/31144 , H01L29/66545 , H01L29/66795 , H01L29/7848 , H01L29/785
摘要： A method of forming a semiconductor structure can include forming a photolithography mask on a silicon fin having a hard mask layer thereon extending in a first direction. A trench can be formed through the hard mask layer into the silicon fin using the photolithography mask, where the trench extends in a second direction to separate the silicon fin into first and second fin structures extending end-to-end in the first direction. A portion of the trench formed by the hard mask layer can be widened relative to a lower portion of the trench defined by the first and second fin structures.
摘要翻译：形成半导体结构的方法可以包括在其上具有在第一方向上延伸的硬掩模层的硅片上形成光刻掩模。可以使用光刻掩模通过硬掩模层将沟槽形成为硅片，其中沟槽沿第二方向延伸，以将硅片分离成在第一方向上端对端延伸的第一和第二鳍结构。由硬掩模层形成的沟槽的一部分可以相对于由第一和第二鳍结构限定的沟槽的下部加宽。

5. 发明授权

US09178044B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09178044B2
公开(公告)日：2015-11-03
申请号：US14287240
申请日：2014-05-27
申请人： Sung-Min Kim , Ji-Su Kang , Dong-Kyu Lee , Dong-Ho Cha
发明人： Sung-Min Kim , Ji-Su Kang , Dong-Kyu Lee , Dong-Ho Cha
IPC分类号： H01L21/3205 , H01L21/20 , H01L21/36 , H01L21/336 , H01L29/66 , H01L29/78
CPC分类号： H01L29/785 , H01L29/66795
摘要： Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.
摘要翻译：提供一种半导体器件及其制造方法。制造半导体器件的方法包括：提供有源鳍片和场绝缘膜，其包括设置在有源鳍片上的第一沟槽; 通过对设置在所述第一沟槽的侧壁和下部的所述场绝缘膜进行第一蚀刻来形成第二沟槽; 通过对设置在所述第二沟槽的侧壁和下部的所述场绝缘膜进行第二蚀刻，在所述场绝缘膜中形成第一区域和第二区域，所述第一区域邻近所述活性鳍片设置，并且具有与第一区域相比，第二区域与有效翅片间隔开，并且具有比第一厚度厚的第二厚度; 并在有源鳍片和场绝缘膜上形成栅极结构。

6. 发明申请

US20140264572A1 METHODS OF FORMING SEMICONDUCTOR DEVICES USING HARD MASK LAYERS 有权
标题翻译：使用硬掩模层形成半导体器件的方法
公开(公告)号：US20140264572A1
公开(公告)日：2014-09-18
申请号：US14165970
申请日：2014-01-28
申请人： Sung-Min Kim , Ji-Su Kang , Dong-Kyu Lee , Dong-Ho Cha
发明人： Sung-Min Kim , Ji-Su Kang , Dong-Kyu Lee , Dong-Ho Cha
IPC分类号： H01L21/308 , H01L29/78 , H01L29/66
CPC分类号： H01L21/3083 , H01L21/31144 , H01L29/66545 , H01L29/66795 , H01L29/7848 , H01L29/785
摘要： A method of forming a semiconductor structure can include forming a photolithography mask on a silicon fin having a hard mask layer thereon extending in a first direction. A trench can be formed through the hard mask layer into the silicon fin using the photolithography mask, where the trench extends in a second direction to separate the silicon fin into first and second fin structures extending end-to-end in the first direction. A portion of the trench formed by the hard mask layer can be widened relative to a lower portion of the trench defined by the first and second fin structures.
摘要翻译：形成半导体结构的方法可以包括在其上具有在第一方向上延伸的硬掩模层的硅片上形成光刻掩模。可以使用光刻掩模通过硬掩模层将沟槽形成为硅片，其中沟槽沿第二方向延伸，以将硅片分离成在第一方向上端对端延伸的第一和第二鳍结构。由硬掩模层形成的沟槽的一部分可以相对于由第一和第二鳍结构限定的沟槽的下部加宽。

7. 发明授权

US09146418B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09146418B2
公开(公告)日：2015-09-29
申请号：US13366645
申请日：2012-02-06
申请人： Gun-Shik Kim , Jun-Sik Oh , Dong-Kyu Lee
发明人： Gun-Shik Kim , Jun-Sik Oh , Dong-Kyu Lee
IPC分类号： H05B33/00 , G02F1/13 , G02F1/1335
CPC分类号： G02F1/133603 , G02F2001/133565 , G02F2201/44
摘要： A display device including: an organic light emitting display unit formed on a first substrate, the organic light emitting display unit comprising first and second electrodes facing each other, and an organic emissive layer formed between the first and second electrodes; and a liquid crystal display unit formed on a second substrate facing the first substrate, the liquid crystal display unit configured to operate as a liquid crystal shutter in response to an electrical potential difference, wherein a resonance structure of the organic light emitting display unit enables the liquid crystal display unit to form an image in a color reflected from each pixel of the organic light emitting display unit.
摘要翻译：一种显示装置，包括：形成在第一基板上的有机发光显示单元，所述有机发光显示单元包括彼此面对的第一和第二电极以及形成在所述第一和第二电极之间的有机发光层; 以及液晶显示单元，形成在面向所述第一基板的第二基板上，所述液晶显示单元被配置为响应于电位差而作为液晶快门操作，其中所述有机发光显示单元的谐振结构使得能够液晶显示单元，以形成从有机发光显示单元的每个像素反射的颜色的图像。

8. 发明授权

US09035330B2 Organic light-emitting display device and method of manufacturing the organic light emitting display device 有权
标题翻译：有机发光显示装置及有机发光显示装置的制造方法
公开(公告)号：US09035330B2
公开(公告)日：2015-05-19
申请号：US13088261
申请日：2011-04-15
申请人： Jin-Goo Kang , Mu-Hyun Kim , Jae-Bok Kim , Dong-Kyu Lee , Ji-Young Kim
发明人： Jin-Goo Kang , Mu-Hyun Kim , Jae-Bok Kim , Dong-Kyu Lee , Ji-Young Kim
IPC分类号： H01L33/00 , H01L29/04 , H01L31/036 , H01L27/32 , H01L51/52
CPC分类号： H01L27/3246 , H01L51/5237 , H01L51/524 , H01L51/5253
摘要： An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.
摘要翻译：公开了一种有机发光显示装置及其制造方法。有机发光显示装置包括：基板，基板上的多个像素，多个第一电极，每个设置在多个像素中的每一个中;像素限定层，包括限定子层的第一像素，每个两个相邻的第一电极，以及限定子层的第二像素，覆盖限定每个两个相邻的第一电极的子层和表面边缘部分的第一像素，设置在每个第一电极上并包括发射层的中间层，以及配置成面对第一电极的第二电极。

9. 发明申请

US20120012850A1 ORGANIC LIGHT EMITTING DISPLAY APPARATUS 有权
标题翻译：有机发光显示装置
公开(公告)号：US20120012850A1
公开(公告)日：2012-01-19
申请号：US13171184
申请日：2011-06-28
申请人： Ji-Young Kim , Mu-Hyun Kim , Jin-Goo Kang , Dong-Kyu Lee , Jae-Bok Kim
发明人： Ji-Young Kim , Mu-Hyun Kim , Jin-Goo Kang , Dong-Kyu Lee , Jae-Bok Kim
IPC分类号： H01L33/08
CPC分类号： H01L27/3258 , H01L27/3246
摘要： An organic light emitting display apparatus in which image quality can be improved. The organic light emitting display apparatus includes: a substrate; a first electrode disposed on the substrate; a pixel definition layer formed on the first electrode and having an opening portion through which a region of the first electrode is exposed; an intermediate layer connected to the first electrode through the opening portion and including an organic emission layer; a second electrode electrically connected to the intermediate layer; and an inorganic planarization pattern portion disposed between the substrate and the first electrode and formed to at least correspond to the opening portion.
摘要翻译：一种能够提高图像质量的有机发光显示装置。有机发光显示装置包括：基板; 设置在所述基板上的第一电极; 形成在第一电极上并具有开口部分的像素限定层，第一电极的区域通过该开口部分露出; 中间层，其通过所述开口部分连接到所述第一电极并且包括有机发射层; 电连接到所述中间层的第二电极; 以及设置在所述基板和所述第一电极之间并且至少形成为至少对应于所述开口部分的无机平坦化图案部分。

10. 发明申请

US20100246881A1 SOUND CONVERTER WITH ENCLOSURE 失效
标题翻译：带有外壳的声音转换器
公开(公告)号：US20100246881A1
公开(公告)日：2010-09-30
申请号：US12513897
申请日：2007-08-21
申请人： Seung-Kiu Jeong , Cheon-Myeong Kim , Dong-Kyu Lee
发明人： Seung-Kiu Jeong , Cheon-Myeong Kim , Dong-Kyu Lee
IPC分类号： H04R1/02
CPC分类号： H04R1/2873 , H04M1/035 , H04R2499/11
摘要： The present invention discloses a sound converter with an enclosure which utilizes an outer space to expand a resonance space. The sound converter with the enclosure includes a frame being equipped with a magnetic circuit for forming a magnetic field in a predetermined gap, a voice coil at least partially positioned in the gap, a diaphragm adhered to the voice coil and inserted into a diaphragm seating portion of the frame, a protector formed at the upper portion of the diaphragm, and an enclosure case coupled to the frame, for defining the inner space of the enclosure which is the resonance space. A vent is provided at the enclosure case so that the inner space of the enclosure can communicate with the outer space. This configuration can secure a wide resonance space.
摘要翻译：本发明公开了一种具有外壳的声音转换器，该外壳利用外部空间来扩展共振空间。具有外壳的声音转换器包括配备有用于形成预定间隙中的磁场的磁路的框架，至少部分地定位在间隙中的音圈，粘附到音圈并插入隔膜座部分的隔膜的框架，形成在隔膜的上部的保护器和联接到框架的外壳，用于限定作为共振空间的外壳的内部空间。在外壳处设置通风口，使得外壳的内部空间能够与外部空间连通。这种配置可以确保广泛的共振空间。

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