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1. 发明授权

US09070777B2 Semiconductor device and method for forming the same 有权
标题翻译：半导体装置及其形成方法
公开(公告)号：US09070777B2
公开(公告)日：2015-06-30
申请号：US13543235
申请日：2012-07-06
申请人： Gun Hee Kim , Jae Woo Park , Jin Hyun Park , Byung Du Ahn , Je Hun Lee , Yeon Hong Kim , Jung Hwa Kim , Sei-Yong Park , Jun Hyun Park , Kyoung Won Lee , Ji Hun Lim
发明人： Gun Hee Kim , Jae Woo Park , Jin Hyun Park , Byung Du Ahn , Je Hun Lee , Yeon Hong Kim , Jung Hwa Kim , Sei-Yong Park , Jun Hyun Park , Kyoung Won Lee , Ji Hun Lim
IPC分类号： H01L29/12 , H01L21/00 , H01L29/786 , H01L21/02
CPC分类号： H01L29/7869 , H01L21/02554
摘要： A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer.
摘要翻译：半导体器件包括：衬底，包括设置在衬底上的氧化物半导体的半导体层，设置在半导体层上的阻挡层和设置在阻挡层上的绝缘层。半导体层包括氧化物半导体，并且阻挡层包括具有比氧化物半导体的半导体材料低的标准电极电位的材料，比氧化物半导体的半导体材料低的电子亲和力或比氧化物半导体的半导体材料。绝缘层包括硅基氧化物或硅基氮化物中的至少一种，并且绝缘层包括与阻挡层的上表面接触的部分。

2. 发明授权

US08743307B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08743307B2
公开(公告)日：2014-06-03
申请号：US13490978
申请日：2012-06-07
申请人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee , Toshihiro Kugimiya , Aya Miki , Shinya Morita , Tomoya Kishi , Hiroaki Tao , Hiroshi Goto
发明人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee , Toshihiro Kugimiya , Aya Miki , Shinya Morita , Tomoya Kishi , Hiroaki Tao , Hiroshi Goto
IPC分类号： G02F1/136
CPC分类号： H01L27/1225 , H01L29/7869
摘要： A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at %, and a ratio of the zinc to the tin is about 1.38 to about 3.88.
摘要翻译：显示装置包括：第一基板，设置在第一基板上的栅极线，包括栅电极，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线并连接到源电极，设置在半导体层上并面对源电极的漏电极和设置在数据线上的钝化层，其中半导体层由包含铟，锡和锌的氧化物半导体形成。铟以约5原子％（at％）至约50原子％的量存在，并且锌与锡的比例为约1.38至约3.88。

3. 发明授权

US08731111B2 Apparatus and method for tunable wideband solar radio noise measurement 有权
标题翻译：可调宽带太阳能无线电噪声测量的装置和方法
公开(公告)号：US08731111B2
公开(公告)日：2014-05-20
申请号：US13313036
申请日：2011-12-07
申请人： Jae Woo Park , Cheol Oh Jeong , Jae Hoon Kim , Jung Hoon Kim
发明人： Jae Woo Park , Cheol Oh Jeong , Jae Hoon Kim , Jung Hoon Kim
IPC分类号： H04L27/00
CPC分类号： H04B17/345 , G01R29/0892
摘要： An apparatus and method for tunable wideband solar radio noise measurement is provided. Accordingly, it is possible to directly measure the absolute flux of solar radio waves in a desired frequency band using a tunable receiver, and accordingly, to protect radio communication broadcasting systems located on the earth from its damage caused due to radio burst, noise and the like.
摘要翻译：提供了一种用于可调宽带太阳能无线电噪声测量的装置和方法。因此，可以使用可调谐接收器直接测量期望频带中的太阳能无线电波的绝对通量，并且因此，保护位于地球上的无线电通信广播系统免受由于无线电突发，噪声和喜欢。

4. 发明授权

US08598577B2 Display substrate and method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08598577B2
公开(公告)日：2013-12-03
申请号：US13177783
申请日：2011-07-07
申请人： Jae-Woo Park , Dong-Hoon Lee , Sung-Haeng Cho , Woo-Geun Lee , Hye-Young Ryu , Young-Joo Choi
发明人： Jae-Woo Park , Dong-Hoon Lee , Sung-Haeng Cho , Woo-Geun Lee , Hye-Young Ryu , Young-Joo Choi
IPC分类号： H01L29/786
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L29/458
摘要： A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.
摘要翻译：显示基板包括在基底基板上沿第一方向延伸的栅极线，在基底基板上的数据线，并且沿与第一方向交叉的第二方向延伸，栅极线上的栅极绝缘层，薄膜晶体管和像素电极。薄膜晶体管包括栅电极，电极连接栅极线，氧化物半导体图案以及氧化物半导体图案上的源电极和漏电极并彼此间隔开。氧化物半导体图案包括包括氧化铟的第一半导体图案和包含无铟氧化物的第二半导体图案。像素电极与漏电极电连接。

5. 发明申请

US20130240802A1 OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管，溅射靶和薄膜晶体管半导体层的氧化物
公开(公告)号：US20130240802A1
公开(公告)日：2013-09-19
申请号：US13989948
申请日：2011-11-28
申请人： Aya Miki , Shinya Morita , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn
发明人： Aya Miki , Shinya Morita , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , C23C14/086 , C23C14/3407 , C23C14/3464 , C23C14/3492 , C23C14/548 , C23C14/5806 , C23C14/5873 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/78693
摘要： This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and at least one type of element (X group element) selected from an X group comprising Si, Hf, Ga, Al, Ni, Ge, Ta, W and Nb. The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.
摘要翻译：用于薄膜晶体管的半导体层的氧化物含有Zn，Sn和In，以及从Si，Hf，Ga，Al，Ni，Ge，Ta的X族中选出的至少一种元素（X族元素），W和Nb。本发明能够提供实现高迁移率且具有优异的应力阻力（施加应力之前和之后的阈值电压偏移可忽略）的薄膜晶体管氧化物。

6. 发明申请

US20130119324A1 OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR 有权
标题翻译：薄膜晶体管，溅射靶和薄膜晶体管半导体层的氧化物
公开(公告)号：US20130119324A1
公开(公告)日：2013-05-16
申请号：US13812277
申请日：2011-07-28
申请人： Shinya Morita , Aya Miki , Yumi Iwanari , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn
发明人： Shinya Morita , Aya Miki , Yumi Iwanari , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn
IPC分类号： H01L29/24
CPC分类号： H01B1/08 , C23C14/08 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/7869
摘要： There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.
摘要翻译：提供了用于薄膜晶体管的半导体层的氧化物，该氧化物可以提供具有优异的开关特性的薄膜晶体管，并且即使在形成钝化层之后也可以稳定地获得氧化物有利特性。根据本发明的用于薄膜晶体管的半导体层的氧化物包括Zn，Sn和Si。

7. 发明申请

US20130114013A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20130114013A1
公开(公告)日：2013-05-09
申请号：US13490978
申请日：2012-06-07
申请人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee
发明人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee
IPC分类号： H01L33/08 , G02F1/136
CPC分类号： H01L27/1225 , H01L29/7869
摘要： A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at % , and a ratio of the zinc to the tin is about 1.38 to about 3.88.
摘要翻译：显示装置包括：第一基板，设置在第一基板上的栅极线，包括栅电极，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线并连接到源电极，设置在半导体层上并面对源电极的漏电极和设置在数据线上的钝化层，其中半导体层由包含铟，锡和锌的氧化物半导体形成。铟以约5原子％（at％）至约50原子％的量存在，并且锌与锡的比例为约1.38至约3.88。

8. 发明申请

US20120106575A1 APPARATUS AND METHOD FOR TRANSMITTING/RECEIVING DATA IN COMMUNICATION SYSTEM 有权
标题翻译：用于在通信系统中发送/接收数据的装置和方法
公开(公告)号：US20120106575A1
公开(公告)日：2012-05-03
申请号：US13283497
申请日：2011-10-27
申请人： Jong-Ee OH , Sok-Kyu Lee , Min-Ho Cheong , Jee-Yon Choi , Jae-Woo Park , Hyun-Kyu Chung
发明人： Jong-Ee OH , Sok-Kyu Lee , Min-Ho Cheong , Jee-Yon Choi , Jae-Woo Park , Hyun-Kyu Chung
IPC分类号： H04J3/24
CPC分类号： H04L1/0057 , H03M13/1102 , H03M13/23 , H03M13/6527 , H04L1/0068 , H04L1/0075 , H04L1/0083
摘要： Disclosed is an apparatus and method for transmitting/receiving data using a low-density parity check (LDPC) coding scheme in a communication system. The method includes generating a multi-user data packet containing data to be transmitted to a plurality of users, encoding the multi-user data packet as a BCC and an LDPC code, and transmitting the encoded multi-user data packet to the plurality of users. In the method, the encoding of the multi-user data packet encodes MPDU subframes corresponding to each of the plurality of users in the multi-user data packet as the LDPC code, and calculates information on a length in LDPC encoding, corresponding to the encoding of the multi-user data packet as the LDPC code.
摘要翻译：公开了一种在通信系统中使用低密度奇偶校验（LDPC）编码方案发送/接收数据的装置和方法。该方法包括生成包含要发送给多个用户的数据的多用户数据分组，将多用户数据分组编码为BCC和LDPC码，并将编码的多用户数据分组发送给多个用户。在该方法中，多用户数据分组的编码将与多用户数据分组中的多个用户中的每一个对应的MPDU子帧编码为LDPC码，并且计算与LDPC编码相对应的LDPC编码长度的信息作为LDPC码的多用户数据分组。

9. 发明申请

US20120099579A1 ZIGBEE GATEWAY AND IP SERVICE SERVER INTERWORKING WITH ZIGBEE GATEWAY THROUGH IP NETWORK 审中-公开
标题翻译： ZIGBEE网关和IP服务器通过IP网络与ZIGBEE网关交互
公开(公告)号：US20120099579A1
公开(公告)日：2012-04-26
申请号：US13382064
申请日：2010-06-24
申请人： Yeon-soo Kim , Jae-Woo Park , Woo-Sik Lee , Suk-Ju Jung
发明人： Yeon-soo Kim , Jae-Woo Park , Woo-Sik Lee , Suk-Ju Jung
IPC分类号： H04W92/00 , H04L12/56
CPC分类号： H04W88/16 , H04W4/18 , H04W80/04 , H04W80/06 , H04W84/18
摘要： A Zigbee gateway connected to a Zigbee node by a Zigbee network and connected to an IP service server through an IP network includes a primitive transport layer module and a Zigbee network layer module. The primitive transport layer module of the Zigbee gateway extracts first data from a first primitive frame packet transferred through the IP network from the IP service server. The Zigbee network layer module receives the first data from the primitive transport layer module and transfers the first data to a Zigbee node. The IP service server interworking with the Zigbee gateway through the IP network includes a primitive transport layer module and a Zigbee application layer module. The primitive transport layer module of the IP service server extracts first data from a first primitive frame packet transferred through the IP network from the Zigbee gateway. The Zigbee application layer module receives the first data from the primitive transport layer module.
摘要翻译：通过Zigbee网络连接到Zigbee节点并通过IP网络连接到IP服务服务器的Zigbee网关包括原始传输层模块和ZigBee网络层模块。 Zigbee网关的原始传输层模块从IP服务服务器从IP网络传输的第一个原始帧包中提取第一个数据。 ZigBee网络层模块从原始传输层模块接收第一个数据，并将第一个数据传输到Zigbee节点。通过IP网络与Zigbee网关交互工作的IP服务服务器包括一个原始传输层模块和一个Zigbee应用层模块。 IP服务服务器的原始传输层模块从Zigbee网关从通过IP网络传送的第一原始帧包提取第一数据。 Zigbee应用层模块从原始传输层模块接收第一个数据。

10. 发明授权

US08133641B2 Half tone mask having multi-half permeation part and a method of manufacturing the same 有权
标题翻译：具有多半渗透部分的半色调掩模及其制造方法
公开(公告)号：US08133641B2
公开(公告)日：2012-03-13
申请号：US12296563
申请日：2007-05-11
申请人： Kap-Seok Kang , Jae-Woo Park , Sang-Uk Park , Yu-Kyung Sim , Keun-Sik Lee
发明人： Kap-Seok Kang , Jae-Woo Park , Sang-Uk Park , Yu-Kyung Sim , Keun-Sik Lee
IPC分类号： G03F1/00
CPC分类号： G03F1/50
摘要： Disclosed are a half tone mask having a multi semi-transmission part and a manufacturing method thereof that can pattern a plurality of layers using one mask, by having at least two or more semi-transmission parts with light transmission that are different from each other. The half tone mask having a multi semi-transmission part comprises a transparent substrate, a light transmission part formed the transparent substrate to transmit irradiation light of a predetermined wavelength band, a light shielding part formed the transparent substrate to shield the irradiation light of the predetermined wavelength band, and at least two or more semi-transmission parts formed by depositing semi-transmission material on the transparent substrate to pass through the irradiation light of the predetermined wavelength band with each different light transmission.
摘要翻译：公开了具有多重半透射部分的半色调掩模及其制造方法，其可以通过具有彼此不同的至少两个或更多个具有光透射的半透射部分，使用一个掩模来图案化多个层。具有多重半透射部分的半色调掩模包括透明基板，形成透明基板以透射预定波长带的照射光的透光部分，形成透明基板的遮光部分，以屏蔽预定波长带的照射光以及通过在透明基板上沉积半透射材料而形成的至少两个或更多个半透射部分，以通过每种不同光透射的预定波长带的照射光。

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