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1. 发明授权

US09299474B2 Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor 有权
标题翻译：用于薄膜晶体管，溅射靶和薄膜晶体管的半导体层的氧化物
公开(公告)号：US09299474B2
公开(公告)日：2016-03-29
申请号：US13812277
申请日：2011-07-28
申请人： Shinya Morita , Aya Miki , Yumi Iwanari , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn
发明人： Shinya Morita , Aya Miki , Yumi Iwanari , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn
IPC分类号： H01B1/08 , H01L29/24 , C23C14/08 , H01L21/02 , H01L29/786
CPC分类号： H01B1/08 , C23C14/08 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/7869
摘要： There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.
摘要翻译：提供了用于薄膜晶体管的半导体层的氧化物，该氧化物可以提供具有优异的开关特性的薄膜晶体管，并且即使在形成钝化层之后也可以稳定地获得氧化物有利特性。根据本发明的用于薄膜晶体管的半导体层的氧化物包括Zn，Sn和Si。

2. 发明授权

US09178073B2 Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor 有权
标题翻译：用于薄膜晶体管，溅射靶和薄膜晶体管的半导体层的氧化物
公开(公告)号：US09178073B2
公开(公告)日：2015-11-03
申请号：US13989944
申请日：2011-11-28
申请人： Aya Miki , Shinya Morita , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
发明人： Aya Miki , Shinya Morita , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
IPC分类号： H01L29/786 , C01G19/00 , C23C14/08 , C23C14/34 , H01L21/02 , C04B35/453 , C23C14/54 , C23C14/58 , C04B35/01 , C04B35/457 , H01L27/12
CPC分类号： H01L29/7869 , C01G19/006 , C01P2006/10 , C04B35/01 , C04B35/453 , C04B35/457 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C23C14/086 , C23C14/3407 , C23C14/548 , C23C14/5806 , C23C14/5873 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/78693
摘要： This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.
摘要翻译：用于薄膜晶体管的半导体层的氧化物含有Zn，Sn和In，并且当表示为[Zn]时，包含在氧化物中的金属元素的含量（at％）满足式（1）至（3） [Sn]和[In]。 [In] /（[In] + [Zn] + [Sn]）≥-0.53×[Zn] /（[Zn] + [Sn]）+0.36（1）[In] /（[In] ] + [Sn]）≥2.28×[Zn] /（[Zn] + [Sn]）-2.01（2）[In] /（[In] + [Zn] + [Sn]）＆ ] /（[Zn] + [Sn]） - 0.32（3）本发明能够提供实现高迁移率并具有优异的应力阻力（施加应力之前和之后的阈值电压偏移可忽略）的薄膜晶体管氧化物。

3. 发明授权

US08890139B2 Solution composition for passivation layer, thin film transistor array panel, and manufacturing method for thin film transistor array panel 有权
标题翻译：钝化层，薄膜晶体管阵列面板的解决方案组成，薄膜晶体管阵列面板的制造方法
公开(公告)号：US08890139B2
公开(公告)日：2014-11-18
申请号：US13534752
申请日：2012-06-27
申请人： Byung Du Ahn , Seung Ho Yeon , Sei-Yong Park , Mi-Hyae Park , Bu Sop Song , Tae Gweon Lee , Jun Hyun Park , Je Hun Lee , Jae Woo Park
发明人： Byung Du Ahn , Seung Ho Yeon , Sei-Yong Park , Mi-Hyae Park , Bu Sop Song , Tae Gweon Lee , Jun Hyun Park , Je Hun Lee , Jae Woo Park
IPC分类号： H01L29/10 , H01L29/12 , H01L29/51 , G02F1/1362 , H01L23/29 , C08L83/04 , C08G77/16 , H01L27/12 , C08G77/00 , C08G77/20 , H01L27/32
CPC分类号： G03F7/0757 , C08G77/16 , C08G77/20 , C08G77/80 , C08L83/04 , G02F1/136227 , G03F7/16 , G03F7/20 , H01L23/296 , H01L27/1225 , H01L27/1248 , H01L27/1288 , H01L27/3258 , H01L29/517 , H01L2924/0002 , C08L83/00 , H01L2924/00
摘要： A passivation layer solution composition is provided. A passivation layer solution composition according to an exemplary embodiment of the present invention includes an organic siloxane resin represented by Chemical Formula 1 below. In Chemical Formula 1, R is at least one substituent selected from a saturated hydrocarbon or an unsaturated hydrocarbon having from 1 to about 25 carbon atoms, and x and y may each independently be from 1 to about 200, and wherein each wavy line indicates a bond to an H atom or to an x siloxane unit or a y siloxane unit, or a bond to an x siloxane unit or a y siloxane unit of another siloxane chain comprising x siloxane units or y siloxane units or a combination thereof.
摘要翻译：提供钝化层溶液组合物。根据本发明的示例性实施方案的钝化层溶液组合物包括由下述化学式1表示的有机硅氧烷树脂。在化学式1中，R是选自饱和烃或具有1至约25个碳原子的不饱和烃中的至少一个取代基，x和y各自独立地为1至约200，并且其中每个波浪线表示键合到H原子或x硅氧烷单元或硅氧烷单元，或与包含x硅氧烷单元或y硅氧烷单元或其组合的另一硅氧烷链的x硅氧烷单元或硅氧烷单元的键。

4. 发明申请

US20140153338A1 MEMORY SYSTEM AND METHOD OF OPERATING MEMORY SYSTEM USING SOFT READ VOLTAGES 有权
标题翻译：使用软读取电压操作存储器系统的存储器系统和方法
公开(公告)号：US20140153338A1
公开(公告)日：2014-06-05
申请号：US14050430
申请日：2013-10-10
申请人： Dae-seok Byeon , Bo-geun Kim , Jae-woo Park
发明人： Dae-seok Byeon , Bo-geun Kim , Jae-woo Park
IPC分类号： G11C16/28
CPC分类号： G11C16/0483 , G11C16/26 , G11C16/28 , G11C16/3404 , G11C16/3422
摘要： A method is provided for operating a memory system. The method includes reading nonvolatile memory cells using a first soft read voltage, a voltage level difference between the first soft read voltage and a first hard read voltage being indicated by a first voltage value; and reading the nonvolatile memory cells using a second soft read voltage paired with the first soft read voltage, a voltage level difference between the second soft read voltage and the first hard read voltage being indicated by a second voltage value. The second voltage value is different than the first voltage value. Also, a difference between the first voltage value and the second voltage value corresponds to the degree of asymmetry of adjacent threshold voltage distributions among multiple threshold voltage distributions set for the nonvolatile memory cells of the memory system.
摘要翻译：提供了一种用于操作存储器系统的方法。该方法包括使用第一软读取电压读取非易失性存储器单元，由第一电压值表示第一软读取电压和第一硬读取电压之间的电压电平差; 以及使用与第一软读取电压成对的第二软读取电压读取非易失性存储单元，第二软读取电压和第一硬读取电压之间的电压电平差由第二电压值指示。第二电压值不同于第一电压值。此外，第一电压值和第二电压值之间的差异对应于针对存储器系统的非易失性存储器单元设置的多个阈值电压分布中的相邻阈值电压分布的不对称程度。

5. 发明申请

US20140123887A1 CRUISE SHIP 有权
标题翻译：巡航船
公开(公告)号：US20140123887A1
公开(公告)日：2014-05-08
申请号：US14128771
申请日：2012-01-05
申请人： Jae Woo Park , Chul Ho Lee , Taeseok Jeong , Joo Ho Heo
发明人： Jae Woo Park , Chul Ho Lee , Taeseok Jeong , Joo Ho Heo
IPC分类号： B63B35/44 , B63B29/02
CPC分类号： B63B35/44 , B63B1/041 , B63B29/02 , B63B2035/004 , B63B2035/4426 , E04H3/14
摘要： The present invention relates to a cruise ship having a body on which rooms are formed and a stadium having stands and a ground formed thereon.
摘要翻译：本发明涉及具有形成有房间的主体的游轮和具有立场的地面和形成在其上的地面。

6. 发明申请

US20130341617A1 OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR HAVING SAID OXIDE, AND THIN-FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管半导体层氧化物，具有氧化硅的薄膜晶体管的半导体层和薄膜晶体管
公开(公告)号：US20130341617A1
公开(公告)日：2013-12-26
申请号：US14004020
申请日：2012-03-08
申请人： Hiroaki Tao , Aya Miki , Shinya Morita , Satoshi Yasuno , Toshihiro Kugimiya , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
发明人： Hiroaki Tao , Aya Miki , Shinya Morita , Satoshi Yasuno , Toshihiro Kugimiya , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
IPC分类号： H01L29/12
CPC分类号： H01L21/02554 , G02F1/1368 , H01L21/02565 , H01L21/02587 , H01L21/02631 , H01L21/477 , H01L29/12 , H01L29/66969 , H01L29/7869
摘要： The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])≦0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])≧0.5. [In]/([In]+[Zn]+[Sn])≦0.3 - - - (1), [In]/([In]+[Zn]+[Sn])≦1.4×{[Zn]/([Zn]+[Sn])}−0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])≦0.83 - - - (3), and 0.1≦[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.
摘要翻译：用于薄膜晶体管的本发明的氧化物是含有In，Zn和Sn的In-Zn-Sn系氧化物，其中，当In-Zn-Sn系中含有的金属元素的含量（原子％当[In] /（[In] + [Sn]）[Zn]，[In] + [Sn]表示[Zn]，[Sn]和[In]时，In-Zn-Sn系氧化物满足下述（2） ]）@ 0.5; 或[In] /（[In] + [Sn]）> = 0.5时的以下表达式（1），（3）和（4）。 [In] + [Zn] + [Sn]）@ 0.3 - - - （1），[In] /（[In] + [Zn] + [Sn]）@ 1.4×{[Zn] /([Zn]+[Sn])}-0.5 - - - （2），[Zn] /（[In] + [Zn] + [Sn]）@ 0.83 - - - （3） In] /（[In] + [Zn] + [Sn]） - - - （4）。根据本发明，可以获得用于薄膜晶体管的氧化物薄膜，其提供具有优异的开关特性的TFT，并且在溅射中具有高溅射速率并且在湿蚀刻中具有适当控制的蚀刻速率。

7. 发明授权

US08492770B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08492770B2
公开(公告)日：2013-07-23
申请号：US13035054
申请日：2011-02-25
申请人： Jae-Woo Park , Je-Hun Lee , Seong-Jin Lee , Yeon-Hong Kim
发明人： Jae-Woo Park , Je-Hun Lee , Seong-Jin Lee , Yeon-Hong Kim
IPC分类号： H01L29/786
CPC分类号： H01L29/04 , H01L29/786
摘要： A thin film transistor includes a gate electrode formed on a substrate, a semiconductor pattern overlapped with the gate electrode, a source electrode overlapped with a first end of the semiconductor pattern and a drain electrode overlapped with a second end of the semiconductor pattern and spaced apart from the source electrode. The semiconductor pattern includes an amorphous multi-elements compound including a II B element and a VI A element or including a III A element and a V A element and having an electron mobility no less than 1.0 cm2/Vs and an amorphous phase, wherein the VI A element excludes oxygen. Thus, a driving characteristic of the thin film transistor may be improved.
摘要翻译：薄膜晶体管包括形成在基板上的栅极电极，与栅电极重叠的半导体图案，与半导体图案的第一端重叠的源电极和与半导体图案的第二端重叠并分开的漏电极源极电极。半导体图案包括包含IIB元素和VIA元素或包含IIIA元素和VA元素并且具有不小于1.0cm 2 / Vs的电子迁移率的无定形多元素化合物和非晶相，其中VI 一个元素排除氧气。因此，可以提高薄膜晶体管的驱动特性。

8. 发明申请

US20130181212A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US20130181212A1
公开(公告)日：2013-07-18
申请号：US13543235
申请日：2012-07-06
申请人： Gun Hee KIM , Jae Woo PARK , Jin Hyun PARK , Byung Du AHN , Je Hun LEE , Yeon Hong KIM , Jung Hwa KIM , Sei-Yong PARK , Jun Hyun PARK , Kyoung Won LEE , Ji Hun LIM
发明人： Gun Hee KIM , Jae Woo PARK , Jin Hyun PARK , Byung Du AHN , Je Hun LEE , Yeon Hong KIM , Jung Hwa KIM , Sei-Yong PARK , Jun Hyun PARK , Kyoung Won LEE , Ji Hun LIM
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L21/02554
摘要： A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer.
摘要翻译：半导体器件包括：衬底，包括设置在衬底上的氧化物半导体的半导体层，设置在半导体层上的阻挡层和设置在阻挡层上的绝缘层。半导体层包括氧化物半导体，并且阻挡层包括具有比氧化物半导体的半导体材料低的标准电极电位的材料，比氧化物半导体的半导体材料低的电子亲和力或比氧化物半导体的半导体材料。绝缘层包括硅基氧化物或硅基氮化物中的至少一种，并且绝缘层包括与阻挡层的上表面接触的部分。

9. 发明申请

US20130075720A1 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR INCLUDING THE SAME, AND THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME 有权
标题翻译：氧化物半导体，包括其的薄膜晶体管，以及包括其的薄膜晶体管阵列
公开(公告)号：US20130075720A1
公开(公告)日：2013-03-28
申请号：US13554393
申请日：2012-07-20
申请人： Byung Du AHN , Je Hun LEE , Sei-Yong PARK , Jun Hyun PARK , Gun Hee KIM , Ji Hun LIM , Jae Woo PARK , Jin Seong PARK , Toshihiro KUGIMIYA , Aya MIKI , Shinya MORITA , Tomoya KISHI , Hiroaki TAO
发明人： Byung Du AHN , Je Hun LEE , Sei-Yong PARK , Jun Hyun PARK , Gun Hee KIM , Ji Hun LIM , Jae Woo PARK , Jin Seong PARK , Toshihiro KUGIMIYA , Aya MIKI , Shinya MORITA , Tomoya KISHI , Hiroaki TAO
IPC分类号： H01L29/786 , H01L29/38
CPC分类号： H01L29/7869 , H01L21/02565 , H01L27/1225 , H01L29/66969
摘要： An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.
摘要翻译：氧化物半导体包括包含选自锌（Zn）和锡（Sn）中的至少一种的第一材料和第二材料，其中通过减去第二材料和氧之间的电负性差值获得的值（O ）从第一材料和氧（O）之间的电负性差值小于约1.3。

10. 发明申请

US20130032798A1 OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR 有权
标题翻译：薄膜晶体管，溅射靶和薄膜晶体管半导体层的氧化物
公开(公告)号：US20130032798A1
公开(公告)日：2013-02-07
申请号：US13642314
申请日：2011-04-18
申请人： Aya Miki , Yumi Iwanari , Toshihiro Kugimiya , Shinya Morita , Yasuaki Terao , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn
发明人： Aya Miki , Yumi Iwanari , Toshihiro Kugimiya , Shinya Morita , Yasuaki Terao , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn
IPC分类号： C01G19/02 , C23C14/08 , C01G35/00 , H01L29/786 , C01F7/02
CPC分类号： H01L29/7869 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/66742 , H01L29/66969 , H01L29/78693
摘要： Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements.
摘要翻译：公开了一种用于薄膜晶体管的半导体层的氧化物，所述氧化物具有优异的薄膜晶体管的开关特性，特别是即使在ZnO浓度高的区域也能够稳定地获得良好的特性，甚至在形成钝化层之后和施加应力之后。氧化物用于薄膜晶体管的半导体层，上述氧化物含有Zn和Sn，还含有选自由Al，Hf，Ta，Ti，Nb，Mg，Ga组成的组X中的至少一种元素，和稀土元素。

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