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1. 发明授权

US08008647B2 Nitride semiconductor device with superlattice active layer including barrier layers with different energy band gaps 有权
标题翻译：具有超晶格有源层的氮化物半导体器件包括具有不同能带隙的势垒层
公开(公告)号：US08008647B2
公开(公告)日：2011-08-30
申请号：US11907169
申请日：2007-10-10
申请人： Seong Eun Park , Min Ho Kim , Jae Woong Han
发明人： Seong Eun Park , Min Ho Kim , Jae Woong Han
IPC分类号： H01L33/06 , H01L33/32 , H01L31/00 , H01L31/0248
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/3407 , H01S5/3416 , H01S5/34333
摘要： There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.
摘要翻译：提供了包括超晶格结构的有源层的氮化物半导体器件。氮化物半导体器件包括：p型氮化物半导体层; n型氮化物半导体层; 以及设置在所述p型和n型氮化物层之间的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和量子阱层，其中所述有源层具有超晶格结构，其中所述量子势垒层具有能够使从p型和n型氮化物半导体层注入的载流子穿过其中的厚度，并且至少一个量子势垒层具有比与n-型氮化物半导体层相邻的另一个量子势垒层更大的能带隙。氮化物半导体层。

2. 发明申请

US20110186815A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20110186815A1
公开(公告)日：2011-08-04
申请号：US13083990
申请日：2011-04-11
申请人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L29/15
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

3. 发明申请

US20110121259A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20110121259A1
公开(公告)日：2011-05-26
申请号：US12902233
申请日：2010-10-12
申请人： Sang Heon HAN , Joo Young CHEON , Je Won KIM , Dong Ju LEE , Dong Chul SHIN , Hyun Wook SHIM , Jae Woong HAN
发明人： Sang Heon HAN , Joo Young CHEON , Je Won KIM , Dong Ju LEE , Dong Chul SHIN , Hyun Wook SHIM , Jae Woong HAN
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.
摘要翻译：提供一种氮化物半导体发光器件，其包括在低电流和高电流密度下具有增强的外部量子效率的有源层。氮化物半导体发光器件包括第一导电型氮化物半导体层; 设置在所述第一导电型氮化物半导体层上并具有交替布置的多个量子阱层和至少一个量子势垒层的有源层; 以及设置在有源层上的第二导电型氮化物半导体层。彼此相邻布置的多个量子阱层包括具有不同厚度的第一和第二量子阱层。

4. 发明申请

US20080042161A1 Nitride semiconductor light emitting diode 审中-公开
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20080042161A1
公开(公告)日：2008-02-21
申请号：US11797492
申请日：2007-05-03
申请人： Jae-Woong Han , Ji Hye Shim
发明人： Jae-Woong Han , Ji Hye Shim
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： A nitride semiconductor light emitting diode includes: an n-type clad layer; an active layer formed on the n-type clad layer; an electron blocking layer formed on the active layer, the electron blocking layer being composed of a p-type nitride semiconductor including a transition element of group III; and a p-type clad layer formed on the electron blocking layer.
摘要翻译：氮化物半导体发光二极管包括：n型覆盖层; 形成在n型覆层上的有源层; 形成在所述有源层上的电子阻挡层，所述电子阻挡层由包含III族过渡元素的p型氮化物半导体构成; 以及形成在电子阻挡层上的p型覆盖层。

5. 发明授权

US08943859B2 Detergent case and washing machine having the same 有权
标题翻译：洗衣机和洗衣机具有相同的功能
公开(公告)号：US08943859B2
公开(公告)日：2015-02-03
申请号：US13173529
申请日：2011-06-30
申请人： Jong Hun Sung , Kwon Hee Kim , Woong Cho , Jung Hoon Kim , Chang Hee Jo , Yul Kwon , Kang Hyun Lee , Jae Woong Han , Hun Gun Koh , Doo Ri Kim , Hyo Chan Kwon
发明人： Jong Hun Sung , Kwon Hee Kim , Woong Cho , Jung Hoon Kim , Chang Hee Jo , Yul Kwon , Kang Hyun Lee , Jae Woong Han , Hun Gun Koh , Doo Ri Kim , Hyo Chan Kwon
IPC分类号： D06F39/02
CPC分类号： D06F39/022
摘要： A detergent case which includes a liquid detergent accommodation space, a siphon pipe protruded upwardly from a bottom surface of the liquid detergent accommodation space, and a siphon cap surrounding the siphon pipe. The detergent case also includes a remaining water discharge hole formed on a bottom surface of the liquid detergent accommodation space, and an opening and closing unit to open and close the remaining water discharge hole due to buoyancy of a liquid accommodated within the liquid detergent accommodation space.
摘要翻译：一种洗涤剂盒，包括液体洗涤剂容纳空间，从液体洗涤剂容纳空间的底面向上突出的虹吸管和围绕虹吸管的虹吸帽。洗涤剂盒还包括形成在液体洗涤剂容纳空间的底表面上的剩余的排水孔，以及打开和关闭由于容纳在液体洗涤剂容纳空间内的液体的浮力而导致的剩余排水孔的开闭单元。

6. 发明申请

US20140103359A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20140103359A1
公开(公告)日：2014-04-17
申请号：US14125878
申请日：2011-07-28
申请人： Hyun Wook Shim , Sang Heon Han , Jae Woong Han , Dong Chul Shin , Je Won Kim , Dong Ju Lee
发明人： Hyun Wook Shim , Sang Heon Han , Jae Woong Han , Dong Chul Shin , Je Won Kim , Dong Ju Lee
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/025 , H01L33/20 , H01L33/24
摘要： A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.
摘要翻译：提供了一种具有增强的发光效率的半导体发光器件及其制造方法。半导体发光器件包括：在其上表面中形成有至少一个凹坑的n型半导体层; 形成在所述n型半导体层上的有源层，与所述凹坑对应的所述有源层的沿着所述凹坑弯曲的上表面的区域; 以及形成在有源层上的p型半导体层，p型半导体层对应于具有沿着有源层的弯曲部分弯曲的上表面的凹坑的区域。

7. 发明申请

US20120174632A1 DETERGENT CASE AND WASHING MACHINE HAVING THE SAME 有权
标题翻译：洗衣机和洗衣机
公开(公告)号：US20120174632A1
公开(公告)日：2012-07-12
申请号：US13173529
申请日：2011-06-30
申请人： Jong Hun SUNG , Kwon Hee KIM , Woong CHO , Jung Hoon KIM , Chang Hee JO , Yul KWON , Kang Hyun LEE , Jae Woong HAN , Hun Gun KOH , Doo Ri KIM , Hyo Chan KWON
发明人： Jong Hun SUNG , Kwon Hee KIM , Woong CHO , Jung Hoon KIM , Chang Hee JO , Yul KWON , Kang Hyun LEE , Jae Woong HAN , Hun Gun KOH , Doo Ri KIM , Hyo Chan KWON
IPC分类号： D06F39/02 , D06F29/00
CPC分类号： D06F39/022
摘要： A detergent case includes a remaining water discharge hole formed on a bottom surface of a liquid detergent accommodation space, and an opening and closing unit to open and close the remaining water discharge hole due to buoyancy of a liquid accommodated within the liquid detergent accommodation space.
摘要翻译：洗涤剂盒包括形成在液体洗涤剂容纳空间的底表面上的剩余的排水孔，以及由于容纳在液体洗涤剂容纳空间内的液体的浮力而使剩余的排水孔打开和关闭的开闭单元。

8. 发明申请

US20120169638A1 DEVICE AND METHOD FOR TRANSMITTING DATA IN PORTABLE TERMINAL 有权
标题翻译：便携式终端发送数据的设备和方法
公开(公告)号：US20120169638A1
公开(公告)日：2012-07-05
申请号：US13342308
申请日：2012-01-03
申请人： Tae-Hoon KIM , Man-Gun HUR , Jae-Woong HAN
发明人： Tae-Hoon KIM , Man-Gun HUR , Jae-Woong HAN
IPC分类号： G06F3/041
CPC分类号： G06F1/1698 , G06F1/1643 , G06F3/0486 , G06F3/04883 , H04L29/00 , H04L63/08 , H04W12/06 , H04W88/02
摘要： A device and method for transmitting data can conveniently perform data transmission between two portable terminals. The device preferably includes a first portable terminal transmitting data on which a drag operation has occurred to a second portable terminal when the second portable terminal is coupled to the first portable terminal using a time and a moving speed of the drag operation when the drag operation occurs from the first terminal to the second portable terminal. The second portable terminal receives the data from the first portable terminal using the time and the moving speed of the drag operation when the drag operation occurs from the first portable terminal to the second portable terminal coupled to the first portable terminal through near field communication.
摘要翻译：用于传输数据的设备和方法可以方便地在两个便携式终端之间执行数据传输。该装置优选地包括第一便携式终端，当第二便携式终端在拖动操作发生时使用时间和拖动操作的移动速度将第二便携式终端连接到第二便携式终端时，向第二便携式终端发送拖动操作已经发生的数据从第一终端到第二便携式终端。当从第一便携式终端到通过近场通信耦合到第一便携式终端的第二便携式终端进行拖动操作时，第二便携式终端使用时间和拖动操作的移动速度从第一便携式终端接收数据。

9. 发明授权

US07718992B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07718992B2
公开(公告)日：2010-05-18
申请号：US11525012
申请日：2006-09-22
申请人： Jong Hak Won , Soo Han Kim , Jae Woong Han , Seong Suk Lee
发明人： Jong Hak Won , Soo Han Kim , Jae Woong Han , Seong Suk Lee
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/20 , H01S5/2009 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier layer and at least one quantum well layer. Also, a current spreading layer is interposed between the first conductivity type nitride layer and the active layer. The current spreading layer has an In content greater than the quantum well layer of the active layer.
摘要翻译：提供一种氮化物半导体器件。在器件中，形成第一和第二导电型氮化物层。在第一和第二导电型氮化物层之间形成有源层。有源层包括至少一个量子势垒层和至少一个量子阱层。而且，在第一导电型氮化物层和有源层之间插入电流扩散层。当前的扩散层的In含量大于有源层的量子阱层。

10. 发明授权

US07923716B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07923716B2
公开(公告)日：2011-04-12
申请号：US12188698
申请日：2008-08-08
申请人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

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