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1. 发明申请

US20160133702A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160133702A1
公开(公告)日：2016-05-12
申请号：US14733354
申请日：2015-06-08
申请人： JAE-HYUN YOO , KWAN-YOUNG KIM , JIN-HYUN NOH , WOO-YEOL MAENG , KEE-MOON CHUN , YONG-WOO JEON
发明人： JAE-HYUN YOO , KWAN-YOUNG KIM , JIN-HYUN NOH , WOO-YEOL MAENG , KEE-MOON CHUN , YONG-WOO JEON
IPC分类号： H01L29/10 , H01L29/06 , H01L29/36 , H01L27/088 , H01L29/78
CPC分类号： H01L29/1045 , H01L21/823412 , H01L21/823425 , H01L21/823431 , H01L21/823807 , H01L21/823821 , H01L27/088 , H01L27/0886 , H01L27/0924 , H01L29/0649 , H01L29/36 , H01L29/66545 , H01L29/785
摘要： A semiconductor device includes a substrate having a first conductive type active region, a second conductive type drift region in the active region, a gate covering the active region on the drift region, a gate insulating film disposed between the active region and the gate, a second conductive type drain region in a location spaced apart from the gate in the drift region and having a higher doping concentration than that of the drift region, a first conductive type shallow well region spaced apart from the drain region in the drift region and between the gate and the drain region, and a second conductive type source region formed in the first conductive type shallow well region between the gate and the drain region and having a higher doping concentration than that of the first conductive type shallow well region.
摘要翻译：半导体器件包括具有第一导电型有源区，有源区中的第二导电型漂移区，覆盖漂移区上的有源区的栅极，配置在有源区和栅之间的栅极绝缘膜，第二导电型漏极区域，其位于与漂移区域中的栅极间隔开的位置，并且具有比漂移区域更高的掺杂浓度的位置;与漂移区域中的漏极区域间隔开的第一导电类型的浅阱区域，栅极和漏极区域以及形成在栅极和漏极区域之间的第一导电类型的浅阱区域中并且具有比第一导电类型的浅阱区域更高的掺杂浓度的第二导电型源极区域。

2. 发明授权

US08846380B2 Reaction cassette for measuring the concentration of glycated hemoglobin and measuring method thereof 有权
标题翻译：用于测量糖化血红蛋白浓度的反应盒及其测定方法
公开(公告)号：US08846380B2
公开(公告)日：2014-09-30
申请号：US12025443
申请日：2008-02-04
申请人： Byeong-woo Bae , Sung-dong Lee , Min-sun Kim , Jae-hyun Yoo , Hyoung-soo Kim , Ki-won Lee , Ju-pyo Hong
发明人： Byeong-woo Bae , Sung-dong Lee , Min-sun Kim , Jae-hyun Yoo , Hyoung-soo Kim , Ki-won Lee , Ju-pyo Hong
IPC分类号： C12M1/34 , G01N33/72 , G01N33/543 , B01L3/00
CPC分类号： G01N33/723 , B01L3/502 , B01L2200/0621 , B01L2400/0457 , G01N33/54306 , G01N33/726
摘要： A reaction cassette for a glycated hemoglobin meter and a measuring method thereof are provided. The reaction cassette for the glycated hemoglobin meter includes: a first zone receiving a first reagent and a blood sample; a second zone receiving a second reagent; a reaction zone in which the blood sample reacts with the first reagent, or through which the second reagent passes to react with a first blood sample mixture obtained by reacting the blood sample with the first reagent; and a measurement zone measuring an amount of total hemoglobin in the first blood sample mixture, or measuring an amount of glycated hemoglobin in a second blood sample mixture obtained by reacting the first blood sample mixture with the second reagent, wherein the blood sample, the first reagent, and the second reagent move between the reaction zone and the measurement zone according to a rotation angle of the reaction cassette when the reaction cassette is rotated. Therefore, since the reaction cassette rotates automatically, it is possible to measure the amount of glycated hemoglobin in a blood sample through simple manipulation and reduce a manufacturing time. Furthermore, since reagents are supplied to the reaction cassette from a separate reagent pack, it is possible to resolve storage and distribution problems of the reaction cassette, which occur when reagents are stored in the reaction cassette.
摘要翻译：提供了糖化血红蛋白计的反应盒及其测定方法。糖化血红蛋白计的反应盒包括：接收第一试剂和血液样品的第一区; 接收第二试剂的第二区域; 血液样品与第一试剂反应的反应区域，或第二试剂通过的反应区域与通过使血液样品与第一试剂反应获得的第一血液样品混合物反应; 以及测量第一血液样品混合物中的总血红蛋白量的测量区域，或者测量通过使第一血液样品混合物与第二试剂反应获得的第二血液样品混合物中的糖化血红蛋白的量，其中，血液样品，第一试剂，第二试剂在反应盒旋转时根据反应盒的旋转角度在反应区和测量区之间移动。因此，由于反应盒自动旋转，因此可以通过简单的操作来测量血液样品中的糖化血红蛋白的量，并减少制造时间。此外，由于将试剂从单独的试剂盒供给到反应盒中，因此可以解决当试剂储存在反应盒中时发生的反应盒的储存和分配问题。

3. 发明授权

US08710587B2 Lateral double diffused metal oxide semiconductor device and method of manufacturing the same 有权
标题翻译：横向双扩散金属氧化物半导体器件及其制造方法
公开(公告)号：US08710587B2
公开(公告)日：2014-04-29
申请号：US13275603
申请日：2011-10-18
申请人： Nam-Chil Moon , Jae-Hyun Yoo , Jong-Min Kim
发明人： Nam-Chil Moon , Jae-Hyun Yoo , Jong-Min Kim
IPC分类号： H01L29/78 , H01L21/336 , H01L29/06
CPC分类号： H01L29/7816 , H01L29/0619 , H01L29/0692 , H01L29/0696 , H01L29/42368 , H01L29/66659 , H01L29/66681 , H01L29/7835
摘要： An LDMOS device includes a gate which is formed on and/over over a substrate; a source and a drain which are arranged to be separated from each other on both sides of the substrate with the gate interposed therebetween; and a field oxide film formed to have a step between the gate and the drain. The LDMOS device further includes a drift region formed of first conduction type impurity ions between the gate and the drain in the substrate; and at least one internal field ring formed in the drift region by selectively implanting a second conduction type impurity in accordance with the step of the field oxide film.
摘要翻译： LDMOS器件包括形成在衬底上和/或之上的栅极; 源极和漏极，其布置成在衬底的两侧彼此分离，栅极介于其间; 以及形成为在栅极和漏极之间具有台阶的场氧化物膜。 LDMOS器件还包括在衬底中的栅极和漏极之间由第一导电型杂质离子形成的漂移区域; 以及通过根据场氧化膜的步骤选择性地注入第二导电型杂质而在漂移区中形成的至少一个内场环。

4. 发明授权

US08377272B2 Electrochemical biosensor measuring system 有权
标题翻译：电化学生物传感器测量系统
公开(公告)号：US08377272B2
公开(公告)日：2013-02-19
申请号：US12529008
申请日：2008-02-26
申请人： Keun Ki Kim , Moon Hwan Kim , Jae Hyun Yoo , Gang Cui , Hakhyun Nam , Geun Sig Cha
发明人： Keun Ki Kim , Moon Hwan Kim , Jae Hyun Yoo , Gang Cui , Hakhyun Nam , Geun Sig Cha
IPC分类号： G01N27/327
CPC分类号： A61B5/1486 , A61B5/14532 , G01N33/48771 , G01N2035/00851
摘要： Disclosed is an electrochemical biosensor measuring device which can be used together with an electrochemical biosensor. The biosensor measuring device comprises an electrical connection portion which is electrically connected with the electrodes of the biosensor upon the insertion of the biosensor there into, and a connector having a structure in which at least one light absorption or reflection path sequentially comprising a light emitter-production lot information identification portion-detector unit is provided to identify the production lot information recorded in the biosensor. The electrochemical biosensor measuring device can automatically identify the production lot information of the biosensor, encoded in the form of a hue or hole marks, upon the insertion of the electrochemical biosensor into the measuring device, thereby obviating the need to manually input the production lot information of the biosensor. Thus, inconvenience and the frequency of errors, which occur when a user personally inputs the production lot information, can be reduced, with the result that the measured values can be conveniently and accurately acquired.
摘要翻译：公开了一种可与电化学生物传感器一起使用的电化学生物传感器测量装置。生物传感器测量装置包括电连接部分，其在将生物传感器插入其中时与生物传感器的电极电连接;以及连接器，具有其中至少一个光吸收或反射路径顺序地包括发光 - 提供生产批次信息识别部分检测器单元以识别记录在生物传感器中的生产批次信息。当将电化学生物传感器插入到测量装置中时，电化学生物传感器测量装置可以自动识别以色调或孔痕形式编码的生物传感器的生产批量信息，从而避免需要手动输入生产批次信息的生物传感器。因此，可以减少当用户亲自输入生产批量信息时发生的不便和错误频率，结果可以方便和准确地获取测量值。

5. 发明申请

US20120292698A1 LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：横向双重扩散金属氧化物半导体器件及其制造方法
公开(公告)号：US20120292698A1
公开(公告)日：2012-11-22
申请号：US13275603
申请日：2011-10-18
申请人： Nam-Chil MOON , Jae-Hyun Yoo , Jong-Min Kim
发明人： Nam-Chil MOON , Jae-Hyun Yoo , Jong-Min Kim
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7816 , H01L29/0619 , H01L29/0692 , H01L29/0696 , H01L29/42368 , H01L29/66659 , H01L29/66681 , H01L29/7835
摘要： An LDMOS device includes a gate which is formed on and/over over a substrate; a source and a drain which are arranged to be separated from each other on both sides of the substrate with the gate interposed therebetween; and a field oxide film formed to have a step between the gate and the drain. The LDMOS device further includes a drift region formed of first conduction type impurity ions between the gate and the drain in the substrate; and at least one internal field ring formed in the drift region by selectively implanting a second conduction type impurity in accordance with the step of the field oxide film.
摘要翻译： LDMOS器件包括形成在衬底上和/或之上的栅极; 源极和漏极，其布置成在衬底的两侧彼此分离，栅极介于其间; 以及形成为在栅极和漏极之间具有台阶的场氧化物膜。 LDMOS器件还包括在衬底中的栅极和漏极之间由第一导电型杂质离子形成的漂移区域; 以及通过根据场氧化膜的步骤选择性地注入第二导电型杂质而在漂移区中形成的至少一个内场环。

6. 发明申请

US20100164049A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20100164049A1
公开(公告)日：2010-07-01
申请号：US12647694
申请日：2009-12-28
申请人： Jae Hyun Yoo , Jong Min Kim
发明人： Jae Hyun Yoo , Jong Min Kim
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L27/14656 , H01L27/14689
摘要： Provided are an image sensor and a method for manufacturing the same. The image sensor comprises an active region including a photodiode region, a transistor region, and an active pattern; a photodiode; and a plurality of transistors. The active region is formed on a substrate. The active region is defined by a device isolation region. The photodiode region and the transistor region are formed in the active region. The photodiode is formed in the photodiode region. The plurality of transistors is formed on the transistor region. The active pattern connects the photodiode region to the transistor region at a second location.
摘要翻译：提供了一种图像传感器及其制造方法。图像传感器包括有源区域，其包括光电二极管区域，晶体管区域和有源图案; 光电二极管和多个晶体管。有源区形成在基板上。有源区域由器件隔离区域定义。光电二极管区域和晶体管区域形成在有源区域中。光电二极管形成在光电二极管区域中。多个晶体管形成在晶体管区域上。有源图案将第二位置处的光电二极管区域连接到晶体管区域。

7. 发明授权

US07655120B2 Biosensor 失效
标题翻译：生物传感器
公开(公告)号：US07655120B2
公开(公告)日：2010-02-02
申请号：US11548457
申请日：2006-10-11
申请人： Byeong-woo Bae , Sung-dong Lee , Hong-seong Suk , Jina Yoo , Min-sun Kim , Jae-hyun Yoo , Ki-won Lee
发明人： Byeong-woo Bae , Sung-dong Lee , Hong-seong Suk , Jina Yoo , Min-sun Kim , Jae-hyun Yoo , Ki-won Lee
IPC分类号： G01N27/327
CPC分类号： C12Q1/001 , G01N2333/902 , G01N2333/904 , G01N2333/91 , G01N2333/914
摘要： A biosensor measuring an analyte contained in a sample is provided, including: an insulative lower substrate that has at least one electrode on which an enzyme reaction layer reacting with the analyte is formed; an upper substrate that faces the lower substrate and is made of a conductive material; and an adhesive layer that has a sample feed with a predetermined height on the enzyme reaction layer and attaches the upper and lower substrates to each other, where an end of the upper substrate acts as an electrode in which an electron-transfer mediator contained in the enzyme reaction layer is oxidized or reduced, and the other end acts as an electrical contact part that electrically contacts a measurement unit.
摘要翻译：提供了一种测量样品中包含的分析物的生物传感器，包括：具有至少一个电极的绝缘下基板，其上形成有与分析物反应的酶反应层; 面向下基板并由导电材料制成的上基板; 以及粘合剂层，其具有在酶反应层上具有预定高度的样品进料并且将上基板和下基板彼此连接，其中上基板的端部用作其中包含在电子转移介体中的电极酶反应层被氧化或还原，另一端作为电接触测量单元的电接触部分。

8. 发明申请

US20080315306A1 Semiconductor Device and Method of Fabricating the Semiconductor Device 有权
标题翻译：半导体器件及半导体器件制造方法
公开(公告)号：US20080315306A1
公开(公告)日：2008-12-25
申请号：US12144432
申请日：2008-06-23
申请人： Jae Hyun Yoo , Jong Min Kim
发明人： Jae Hyun Yoo , Jong Min Kim
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0649 , H01L21/225 , H01L21/26513 , H01L29/66689 , H01L29/7816
摘要： A semiconductor device comprises a gate electrode on a semiconductor substrate, drift regions at opposite sides of the gate electrode, source and drain regions in the respective drift regions, and shallow trench isolation (STI) regions in the respective drift regions between the gate electrode and the source or drain region, wherein the drift regions comprise first and second conductivity-type impurities.
摘要翻译：半导体器件包括半导体衬底上的栅极电极，栅电极的相对侧的漂移区域，各个漂移区域中的源极和漏极区域以及栅极电极与栅极电极之间的各个漂移区域中的浅沟槽隔离（STI）区域源极或漏极区域，其中漂移区域包括第一和第二导电型杂质。

9. 发明授权

US09472659B2 Semiconductor devices 有权
标题翻译：半导体器件
公开(公告)号：US09472659B2
公开(公告)日：2016-10-18
申请号：US14813848
申请日：2015-07-30
申请人： Jin-Hyun Noh , Su-Tae Kim , Jae-Hyun Yoo , Byeong-Ryeol Lee , Jong-Sung Jeon
发明人： Jin-Hyun Noh , Su-Tae Kim , Jae-Hyun Yoo , Byeong-Ryeol Lee , Jong-Sung Jeon
IPC分类号： H01L29/78 , H01L29/161 , H01L27/088 , H01L21/00
CPC分类号： H01L29/063 , H01L27/0886 , H01L27/092 , H01L27/0922 , H01L29/0619 , H01L29/0653 , H01L29/0696 , H01L29/0847 , H01L29/0865 , H01L29/0882 , H01L29/1054 , H01L29/1095 , H01L29/161 , H01L29/165 , H01L29/408 , H01L29/4238 , H01L29/66545 , H01L29/66659 , H01L29/7816 , H01L29/7835 , H01L29/785 , H01L29/7851
摘要： Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice constant of the substrate, a first gate electrode on the channel layer, a first source region of a first conductivity type at a first side of the first gate electrode, a first body region of a second conductivity type under the first source region and contacting the first source region, a first drain region of the first conductivity type disposed at a second side of the first gate electrode, a first drift region of the first conductivity type under the first drain region and contacting the first drain region, and a first stud region in the channel layer and the first drift region. The first stud region has an impurity concentration higher than an impurity concentration of the first drift region.
摘要翻译：半导体器件包括在衬底上的沟道层，沟道层包括具有不同于衬底的晶格常数的晶格常数的材料，沟道层上的第一栅电极，第一导电类型的第一源极区在所述第一源极区域的第一导电类型的第一主体区域和与所述第一源极区域接触的第一导电类型的第一体区域，设置在所述第一栅极电极的第二侧的所述第一导电类型的第一漏极区域，在第一漏区下面的第一导电类型的漂移区，并与第一漏极区以及沟道层和第一漂移区中的第一柱状区域接触。第一螺柱区域的杂质浓度高于第一漂移区域的杂质浓度。

10. 发明申请

US20130049169A1 BIPOLAR JUNCTION TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：双极接头晶体管及其制造方法
公开(公告)号：US20130049169A1
公开(公告)日：2013-02-28
申请号：US13345966
申请日：2012-01-09
申请人： JAE HYUN YOO , Jong Min Kim
发明人： JAE HYUN YOO , Jong Min Kim
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L29/735 , H01L29/0821 , H01L29/1008
摘要： A bipolar junction transistor includes a first trench element isolation film, a second trench element isolation film, a first base region, a second base region, a collector region, a first well, a second well, an emitter, a collector, and bases. The second well is formed by implanting an n-type impurity into the semiconductor substrate, and the emitter is formed by implanting the n-type impurity into the emitter region between the first trench element isolation film and the second well. The collector is formed by implanting the n-type impurity into the collector region between the first well and the second trench element isolation film, and the bases are formed by implanting the p-type impurity into the first base region and into the second base region between the emitter region and the second well.
摘要翻译：双极结型晶体管包括第一沟槽元件隔离膜，第二沟槽元件隔离膜，第一基极区，第二基极区，集电极区，第一阱，第二阱，发射极，集电极和基极。通过将n型杂质注入到半导体衬底中而形成第二阱，并且通过将n型杂质注入到第一沟槽元件隔离膜和第二阱之间的发射极区域中来形成发射极。集电体通过将n型杂质注入第一阱和第二沟槽元件隔离膜之间的集电极区域而形成，并且通过将p型杂质注入第一基极区域并进入第二基极区域而形成基极在发射极区域和第二阱之间。

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