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1. 发明申请

US20100164049A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20100164049A1
公开(公告)日：2010-07-01
申请号：US12647694
申请日：2009-12-28
申请人： Jae Hyun Yoo , Jong Min Kim
发明人： Jae Hyun Yoo , Jong Min Kim
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L27/14656 , H01L27/14689
摘要： Provided are an image sensor and a method for manufacturing the same. The image sensor comprises an active region including a photodiode region, a transistor region, and an active pattern; a photodiode; and a plurality of transistors. The active region is formed on a substrate. The active region is defined by a device isolation region. The photodiode region and the transistor region are formed in the active region. The photodiode is formed in the photodiode region. The plurality of transistors is formed on the transistor region. The active pattern connects the photodiode region to the transistor region at a second location.
摘要翻译：提供了一种图像传感器及其制造方法。图像传感器包括有源区域，其包括光电二极管区域，晶体管区域和有源图案; 光电二极管和多个晶体管。有源区形成在基板上。有源区域由器件隔离区域定义。光电二极管区域和晶体管区域形成在有源区域中。光电二极管形成在光电二极管区域中。多个晶体管形成在晶体管区域上。有源图案将第二位置处的光电二极管区域连接到晶体管区域。

2. 发明申请

US20080315306A1 Semiconductor Device and Method of Fabricating the Semiconductor Device 有权
标题翻译：半导体器件及半导体器件制造方法
公开(公告)号：US20080315306A1
公开(公告)日：2008-12-25
申请号：US12144432
申请日：2008-06-23
申请人： Jae Hyun Yoo , Jong Min Kim
发明人： Jae Hyun Yoo , Jong Min Kim
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0649 , H01L21/225 , H01L21/26513 , H01L29/66689 , H01L29/7816
摘要： A semiconductor device comprises a gate electrode on a semiconductor substrate, drift regions at opposite sides of the gate electrode, source and drain regions in the respective drift regions, and shallow trench isolation (STI) regions in the respective drift regions between the gate electrode and the source or drain region, wherein the drift regions comprise first and second conductivity-type impurities.
摘要翻译：半导体器件包括半导体衬底上的栅极电极，栅电极的相对侧的漂移区域，各个漂移区域中的源极和漏极区域以及栅极电极与栅极电极之间的各个漂移区域中的浅沟槽隔离（STI）区域源极或漏极区域，其中漂移区域包括第一和第二导电型杂质。

3. 发明申请

US20100091154A1 Image Sensor and Method For Manufacturing the Same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20100091154A1
公开(公告)日：2010-04-15
申请号：US12575790
申请日：2009-10-08
申请人： HEE SUNG SHIM , Jae Hyun Yoo , Jong Min Kim
发明人： HEE SUNG SHIM , Jae Hyun Yoo , Jong Min Kim
IPC分类号： H04N5/335 , H01L21/768
CPC分类号： H01L27/14636 , H01L27/14632 , H01L27/14634 , H01L27/14643 , H01L27/14687 , H01L27/1469
摘要： An image sensor is provided. The image sensor comprises a readout circuitry, an interconnection, an image sensing device and a via plug. The readout circuitry is disposed in a first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The image sensing device is disposed over the interconnection. The via plug is formed at a pixel boundary and electrically connects the image sensing device and the interconnection.
摘要翻译：提供图像传感器。图像传感器包括读出电路，互连，图像感测装置和通孔插头。读出电路设置在第一基板中。互连设置在第一基板上并电连接到读出电路。图像感测装置设置在互连上。通孔插塞形成在像素边界处并电连接图像感测装置和互连。

4. 发明申请

US20120193750A1 POWER MANAGEMENT INTEGRATED CIRCUIT 有权
标题翻译：电源管理集成电路
公开(公告)号：US20120193750A1
公开(公告)日：2012-08-02
申请号：US13111396
申请日：2011-05-19
申请人： JONG MIN KIM , Jae Hyun Yoo
发明人： JONG MIN KIM , Jae Hyun Yoo
IPC分类号： H01L23/552
CPC分类号： H01L21/70 , H01L23/552 , H01L2924/0002 , H01L2924/00
摘要： A Power Management Integrated Circuit (PMIC) that includes a substrate, a high-side (HS) region on the substrate, a low-side (LS) region spaced from the first region, a device isolation layer interposed between the HS region and the LS region, a metal interconnection connected to the HS region across the device isolation layer and configured to permit a high-voltage current to flow in the HS region, and at least one electric field shield between the metal interconnection and the device isolation layer. Since the electric field shield is disposed under the metal interconnection, a sufficient breakdown voltage can be ensured for the HS region and the LS region.
摘要翻译：一种电源管理集成电路（PMIC），其包括衬底，衬底上的高侧（HS）区域，与第一区域间隔开的低侧（LS）区域，设置在HS区域和第二区域之间的器件隔离层 LS区域，跨过器件隔离层连接到HS区域并且被配置为允许高压电流在HS区域中流动的金属互连以及金属互连和器件隔离层之间的至少一个电场屏蔽。由于电场屏蔽设置在金属互连下方，因此可以确保HS区域和LS区域的足够的击穿电压。

5. 发明授权

US09130005B2 Bipolar junction transistor and method of manufacturing the same 有权
标题翻译：双极结晶体管及其制造方法
公开(公告)号：US09130005B2
公开(公告)日：2015-09-08
申请号：US13345966
申请日：2012-01-09
申请人： Jae Hyun Yoo , Jong Min Kim
发明人： Jae Hyun Yoo , Jong Min Kim
IPC分类号： H01L29/73 , H01L29/735 , H01L29/08 , H01L29/10
CPC分类号： H01L29/735 , H01L29/0821 , H01L29/1008
摘要： A bipolar junction transistor includes a first trench element isolation film, a second trench element isolation film, a first base region, a second base region, a collector region, a first well, a second well, an emitter, a collector, and bases. The second well is formed by implanting an n-type impurity into the semiconductor substrate, and the emitter is formed by implanting the n-type impurity into the emitter region between the first trench element isolation film and the second well. The collector is formed by implanting the n-type impurity into the collector region between the first well and the second trench element isolation film, and the bases are formed by implanting the p-type impurity into the first base region and into the second base region between the emitter region and the second well.
摘要翻译：双极结型晶体管包括第一沟槽元件隔离膜，第二沟槽元件隔离膜，第一基极区，第二基极区，集电极区，第一阱，第二阱，发射极，集电极和基极。通过将n型杂质注入到半导体衬底中而形成第二阱，并且通过将n型杂质注入到第一沟槽元件隔离膜和第二阱之间的发射极区域中来形成发射极。集电体通过将n型杂质注入第一阱和第二沟槽元件隔离膜之间的集电极区域而形成，并且通过将p型杂质注入第一基极区域并进入第二基极区域而形成基极在发射极区域和第二阱之间。

6. 发明授权

US08716793B2 Lateral double diffused metal oxide semiconductor device and method for manufacturing the same 有权
标题翻译：横向双扩散金属氧化物半导体器件及其制造方法
公开(公告)号：US08716793B2
公开(公告)日：2014-05-06
申请号：US13410905
申请日：2012-03-02
申请人： Jae Hyun Yoo , Jong Min Kim
发明人： Jae Hyun Yoo , Jong Min Kim
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L29/0619 , H01L29/0634 , H01L29/0692 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： Disclosed are an LDMOS device and a method for manufacturing the same capable of decreasing the concentration of a drift region between a source finger tip and a drain, thereby increasing a breakdown voltage. An LDMOS device includes a gate which is formed on a substrate, a source and a drain which are separately arranged on both sides of the substrate with the gate interposed therebetween, a field oxide film which is formed to have a step between the gate and the drain, a drift region which is formed of first condition type impurity ions between the gate and the drain on the substrate, and at least one internal field ring which is formed inside the drift region and formed by selectively ion-implanting second conduction type impurity ions in accordance with the step of the field oxide film.
摘要翻译：公开了一种LDMOS器件及其制造方法，其能够降低源极指尖和漏极之间的漂移区域的浓度，从而增加击穿电压。 LDMOS器件包括形成在基板上的栅极，源极和漏极，栅极和栅极分别设置在基板的两侧，栅极插入其间;场氧化膜，其形成为在栅极和栅极之间具有台阶漏极，由衬底上的栅极和漏极之间的第一条件型杂质离子形成的漂移区，以及形成在漂移区内部的至少一个内部场环，并且通过选择性地离子注入第二导电型杂质离子根据场氧化膜的步骤。

7. 发明授权

US08461668B2 Power management integrated circuit 有权
标题翻译：电源管理集成电路
公开(公告)号：US08461668B2
公开(公告)日：2013-06-11
申请号：US13111396
申请日：2011-05-19
申请人： Jong Min Kim , Jae Hyun Yoo
发明人： Jong Min Kim , Jae Hyun Yoo
IPC分类号： H01L21/44 , H01L31/70 , H01L21/70
CPC分类号： H01L21/70 , H01L23/552 , H01L2924/0002 , H01L2924/00
摘要： A Power Management Integrated Circuit (PMIC) that includes a substrate, a high-side (HS) region on the substrate, a low-side (LS) region spaced from the first region, a device isolation layer interposed between the HS region and the LS region, a metal interconnection connected to the HS region across the device isolation layer and configured to permit a high-voltage current to flow in the HS region, and at least one electric field shield between the metal interconnection and the device isolation layer. Since the electric field shield is disposed under the metal interconnection, a sufficient breakdown voltage can be ensured for the HS region and the LS region.
摘要翻译：一种电源管理集成电路（PMIC），其包括衬底，衬底上的高侧（HS）区域，与第一区域间隔开的低侧（LS）区域，设置在HS区域和第二区域之间的器件隔离层 LS区域，跨过器件隔离层连接到HS区域并且被配置为允许高压电流在HS区域中流动的金属互连以及金属互连和器件隔离层之间的至少一个电场屏蔽。由于电场屏蔽设置在金属互连下方，因此可以确保HS区域和LS区域的足够的击穿电压。

8. 发明授权

US07994013B2 Semiconductor device and method of fabricating the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07994013B2
公开(公告)日：2011-08-09
申请号：US12144432
申请日：2008-06-23
申请人： Jae Hyun Yoo , Jong Min Kim
发明人： Jae Hyun Yoo , Jong Min Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/0649 , H01L21/225 , H01L21/26513 , H01L29/66689 , H01L29/7816
摘要： A semiconductor device comprises a gate electrode on a semiconductor substrate, drift regions at opposite sides of the gate electrode, source and drain regions in the respective drift regions, and shallow trench isolation (STI) regions in the respective drift regions between the gate electrode and the source or drain region, wherein the drift regions comprise first and second conductivity-type impurities.
摘要翻译：半导体器件包括半导体衬底上的栅极电极，栅电极的相对侧的漂移区域，各个漂移区域中的源极和漏极区域以及栅极电极与栅极电极之间的各个漂移区域中的浅沟槽隔离（STI）区域源极或漏极区域，其中漂移区域包括第一和第二导电型杂质。

9. 发明授权

US08377272B2 Electrochemical biosensor measuring system 有权
标题翻译：电化学生物传感器测量系统
公开(公告)号：US08377272B2
公开(公告)日：2013-02-19
申请号：US12529008
申请日：2008-02-26
申请人： Keun Ki Kim , Moon Hwan Kim , Jae Hyun Yoo , Gang Cui , Hakhyun Nam , Geun Sig Cha
发明人： Keun Ki Kim , Moon Hwan Kim , Jae Hyun Yoo , Gang Cui , Hakhyun Nam , Geun Sig Cha
IPC分类号： G01N27/327
CPC分类号： A61B5/1486 , A61B5/14532 , G01N33/48771 , G01N2035/00851
摘要： Disclosed is an electrochemical biosensor measuring device which can be used together with an electrochemical biosensor. The biosensor measuring device comprises an electrical connection portion which is electrically connected with the electrodes of the biosensor upon the insertion of the biosensor there into, and a connector having a structure in which at least one light absorption or reflection path sequentially comprising a light emitter-production lot information identification portion-detector unit is provided to identify the production lot information recorded in the biosensor. The electrochemical biosensor measuring device can automatically identify the production lot information of the biosensor, encoded in the form of a hue or hole marks, upon the insertion of the electrochemical biosensor into the measuring device, thereby obviating the need to manually input the production lot information of the biosensor. Thus, inconvenience and the frequency of errors, which occur when a user personally inputs the production lot information, can be reduced, with the result that the measured values can be conveniently and accurately acquired.
摘要翻译：公开了一种可与电化学生物传感器一起使用的电化学生物传感器测量装置。生物传感器测量装置包括电连接部分，其在将生物传感器插入其中时与生物传感器的电极电连接;以及连接器，具有其中至少一个光吸收或反射路径顺序地包括发光 - 提供生产批次信息识别部分检测器单元以识别记录在生物传感器中的生产批次信息。当将电化学生物传感器插入到测量装置中时，电化学生物传感器测量装置可以自动识别以色调或孔痕形式编码的生物传感器的生产批量信息，从而避免需要手动输入生产批次信息的生物传感器。因此，可以减少当用户亲自输入生产批量信息时发生的不便和错误频率，结果可以方便和准确地获取测量值。

10. 发明申请

US20100032321A1 ELECTROCHEMICAL BIOSENSOR MEASURING SYSTEM 有权
标题翻译：电化学传感器测量系统
公开(公告)号：US20100032321A1
公开(公告)日：2010-02-11
申请号：US12529008
申请日：2008-02-26
申请人： Keun Ki Kim , Moon Hwan Kim , Jae Hyun Yoo , Gang Cui , Hakhyun Nam , Geun Sig Cha
发明人： Keun Ki Kim , Moon Hwan Kim , Jae Hyun Yoo , Gang Cui , Hakhyun Nam , Geun Sig Cha
IPC分类号： G01N27/26
CPC分类号： A61B5/1486 , A61B5/14532 , G01N33/48771 , G01N2035/00851
摘要： Disclosed is an electrochemical biosensor measuring device which can be used together with an electrochemical biosensor. The biosensor measuring device comprises an electrical connection portion which is electrically connected with the electrodes of the biosensor upon the insertion of the biosensor there into, and a connector having a structure in which at least one light absorption or reflection path sequentially comprising a light emitter-production lot information identification portion-detector unit is provided to identify the production lot information recorded in the biosensor. The electrochemical biosensor measuring device can automatically identify the production lot information of the biosensor, encoded in the form of a hue or hole marks, upon the insertion of the electrochemical biosensor into the measuring device, thereby obviating the need to manually input the production lot information of the biosensor. Thus, inconvenience and the frequency of errors, which occur when a user personally inputs the production lot information, can be reduced, with the result that the measured values can be conveniently and accurately acquired.
摘要翻译：公开了一种可与电化学生物传感器一起使用的电化学生物传感器测量装置。生物传感器测量装置包括电连接部分，其在将生物传感器插入其中时与生物传感器的电极电连接;以及连接器，具有其中至少一个光吸收或反射路径顺序地包括发光 - 提供生产批次信息识别部分检测器单元以识别记录在生物传感器中的生产批次信息。当将电化学生物传感器插入到测量装置中时，电化学生物传感器测量装置可以自动识别以色调或孔痕形式编码的生物传感器的生产批次信息，从而避免了手动输入生产批次信息的需要的生物传感器。因此，可以减少当用户亲自输入生产批量信息时发生的不便和错误频率，结果可以方便和准确地获取测量值。

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