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1. 发明授权

US07863119B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US07863119B2
公开(公告)日：2011-01-04
申请号：US12200467
申请日：2008-08-28
申请人： Daisuke Matsushita , Yuuichiro Mitani
发明人： Daisuke Matsushita , Yuuichiro Mitani
IPC分类号： H01L21/00
CPC分类号： H01L29/518 , H01L21/28273 , H01L21/28282 , H01L21/3145 , H01L27/115 , H01L27/11517 , H01L27/11521 , H01L27/11568 , H01L29/4234 , H01L29/4916 , H01L29/513 , H01L29/78 , H01L29/788 , H01L29/792
摘要： It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto.

2. 发明授权

US08053827B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08053827B2
公开(公告)日：2011-11-08
申请号：US12926957
申请日：2010-12-20
申请人： Daisuke Matsushita , Yuuichiro Mitani
发明人： Daisuke Matsushita , Yuuichiro Mitani
IPC分类号： H01L29/66
CPC分类号： H01L29/518 , H01L21/28273 , H01L21/28282 , H01L21/3145 , H01L27/115 , H01L27/11517 , H01L27/11521 , H01L27/11568 , H01L29/4234 , H01L29/4916 , H01L29/513 , H01L29/78 , H01L29/788 , H01L29/792
摘要： It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto.
摘要翻译：可以提供一种制造半导体器件的方法，该半导体器件具有不容易形成缺陷的高品质绝缘膜，并且经受较少的漏电流。一种制造半导体器件的方法，包括：在绝缘层上形成非晶硅层; 将氧引入非晶硅层; 以及通过氮化导入其中的氧的非晶硅层形成氮氧化硅层。

3. 发明授权

US07728379B2 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07728379B2
公开(公告)日：2010-06-01
申请号：US11690428
申请日：2007-03-23
申请人： Takuya Konno , Yoshio Ozawa , Tetsuya Kai , Yasushi Nakasaki , Yuuichiro Mitani
发明人： Takuya Konno , Yoshio Ozawa , Tetsuya Kai , Yasushi Nakasaki , Yuuichiro Mitani
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L29/7883 , H01L29/513 , H01L29/66825
摘要： A semiconductor device includes: a semiconductor layer; an insulating film provided on the semiconductor layer; and a charge storage layer provided on the insulating film. The semiconductor layer has a channel formation region in its surface portion. The insulating film contains silicon, germanium, and oxygen. The charge storage layer is capable of storing charge supplied from the semiconductor layer through the insulating film. A method of manufacturing a semiconductor device includes: forming a silicon oxide film on a surface of a semiconductor layer; introducing germanium into the silicon oxide film; forming an insulating film containing silicon, germanium, and oxygen by heat treatment under oxidizing atmosphere; and forming a charge storage layer on the insulating film, the charge storage layer being capable of storing charge supplied from the semiconductor layer through the insulating layer.
摘要翻译：半导体器件包括：半导体层; 设置在所述半导体层上的绝缘膜; 以及设置在绝缘膜上的电荷存储层。半导体层在其表面部分具有沟道形成区域。绝缘膜含有硅，锗和氧。电荷存储层能够存储从半导体层通过绝缘膜提供的电荷。制造半导体器件的方法包括：在半导体层的表面上形成氧化硅膜; 将锗引入到氧化硅膜中; 在氧化气氛下通过热处理形成含有硅，锗和氧的绝缘膜; 以及在所述绝缘膜上形成电荷存储层，所述电荷存储层能够将通过所述绝缘层从所述半导体层提供的电荷存储。

4. 发明申请

US20090267134A1 NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20090267134A1
公开(公告)日：2009-10-29
申请号：US12233023
申请日：2008-09-18
申请人： Masahiro Koike , Yuuichiro Mitani , Yasushi Nakasaki , Masato Koyama
发明人： Masahiro Koike , Yuuichiro Mitani , Yasushi Nakasaki , Masato Koyama
IPC分类号： H01L29/792
CPC分类号： H01L27/11521 , H01L27/11568
摘要： A nonvolatile semiconductor memory apparatus includes: a memory element including: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate located between the source region and the drain region, having sites that perform electron trapping and releasing and are formed by adding an element different from a base material, and including insulating layers having different dielectric constants, the sites having a higher level than a Fermi level of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
摘要翻译：一种非易失性半导体存储装置，包括：存储元件，包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在位于源极区域和漏极区域之间的半导体衬底的一部分上的第一绝缘膜，具有进行电子俘获和释放的位置，并且通过添加不同于基底材料的元件形成，并且包括具有不同电介质的绝缘层常数，具有比形成半导体衬底的材料的费米能级高的位置; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

5. 发明授权

US08860118B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08860118B2
公开(公告)日：2014-10-14
申请号：US13559770
申请日：2012-07-27
申请人： Daisuke Matsushita , Yuuichiro Mitani
发明人： Daisuke Matsushita , Yuuichiro Mitani
IPC分类号： H01L29/26 , H01L27/115 , H01L21/28 , H01L29/792 , H01L29/51 , H01L21/314 , H01L29/423
CPC分类号： H01L29/518 , H01L21/28273 , H01L21/28282 , H01L21/3145 , H01L27/115 , H01L27/11517 , H01L27/11521 , H01L27/11568 , H01L29/4234 , H01L29/4916 , H01L29/513 , H01L29/78 , H01L29/788 , H01L29/792
摘要： It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto.
摘要翻译：可以提供一种制造半导体器件的方法，该半导体器件具有不容易形成缺陷的高品质绝缘膜，并且经受较少的漏电流。一种制造半导体器件的方法，包括：在绝缘层上形成非晶硅层; 将氧引入非晶硅层; 以及通过氮化导入其中的氧的非晶硅层形成氮氧化硅层。

6. 发明授权

US08253190B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08253190B2
公开(公告)日：2012-08-28
申请号：US13137919
申请日：2011-09-21
申请人： Daisuke Matsushita , Yuuichiro Mitani
发明人： Daisuke Matsushita , Yuuichiro Mitani
IPC分类号： H01L29/66
CPC分类号： H01L29/518 , H01L21/28273 , H01L21/28282 , H01L21/3145 , H01L27/115 , H01L27/11517 , H01L27/11521 , H01L27/11568 , H01L29/4234 , H01L29/4916 , H01L29/513 , H01L29/78 , H01L29/788 , H01L29/792
摘要： It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto.

7. 发明授权

US07943984B2 Nonvolatile semiconductor memory apparatus 有权
标题翻译：非易失性半导体存储装置
公开(公告)号：US07943984B2
公开(公告)日：2011-05-17
申请号：US12233023
申请日：2008-09-18
申请人： Masahiro Koike , Yuuichiro Mitani , Yasushi Nakasaki , Masato Koyama
发明人： Masahiro Koike , Yuuichiro Mitani , Yasushi Nakasaki , Masato Koyama
IPC分类号： H01L29/792
CPC分类号： H01L27/11521 , H01L27/11568
摘要： A nonvolatile semiconductor memory apparatus includes: a memory element including: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate located between the source region and the drain region, having sites that perform electron trapping and releasing and are formed by adding an element different from a base material, and including insulating layers having different dielectric constants, the sites having a higher level than a Fermi level of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
摘要翻译：一种非易失性半导体存储装置，包括：存储元件，包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在位于源极区域和漏极区域之间的半导体衬底的一部分上的第一绝缘膜，具有进行电子俘获和释放的位置，并且通过添加不同于基底材料的元件形成，并且包括具有不同电介质的绝缘层常数，具有比形成半导体衬底的材料的费米能级高的位置; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

8. 发明申请

US20090184401A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090184401A1
公开(公告)日：2009-07-23
申请号：US12200467
申请日：2008-08-28
申请人： Daisuke MATSUSHITA , Yuuichiro Mitani
发明人： Daisuke MATSUSHITA , Yuuichiro Mitani
IPC分类号： H01L23/58 , H01L21/205
CPC分类号： H01L29/518 , H01L21/28273 , H01L21/28282 , H01L21/3145 , H01L27/115 , H01L27/11517 , H01L27/11521 , H01L27/11568 , H01L29/4234 , H01L29/4916 , H01L29/513 , H01L29/78 , H01L29/788 , H01L29/792
摘要： It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto.
摘要翻译：可以提供一种制造半导体器件的方法，该半导体器件具有不容易形成缺陷的高品质绝缘膜，并且经受较少的漏电流。一种制造半导体器件的方法，包括：在绝缘层上形成非晶硅层; 将氧引入非晶硅层; 以及通过氮化导入其中的氧的非晶硅层形成氮氧化硅层。

9. 发明申请

US20080073691A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080073691A1
公开(公告)日：2008-03-27
申请号：US11690428
申请日：2007-03-23
申请人： Takuya Konno , Yoshio Ozawa , Tetsuya Kai , Yasushi Nakasaki , Yuuichiro Mitani
发明人： Takuya Konno , Yoshio Ozawa , Tetsuya Kai , Yasushi Nakasaki , Yuuichiro Mitani
IPC分类号： H01L29/788 , H01L21/425
CPC分类号： H01L29/7883 , H01L29/513 , H01L29/66825
摘要： A semiconductor device includes: a semiconductor layer; an insulating film provided on the semiconductor layer; and a charge storage layer provided on the insulating film. The semiconductor layer has a channel formation region in its surface portion. The insulating film contains silicon, germanium, and oxygen. The charge storage layer is capable of storing charge supplied from the semiconductor layer through the insulating film. A method of manufacturing a semiconductor device includes: forming a silicon oxide film on a surface of a semiconductor layer; introducing germanium into the silicon oxide film; forming an insulating film containing silicon, germanium, and oxygen by heat treatment under oxidizing atmosphere; and forming a charge storage layer on the insulating film, the charge storage layer being capable of storing charge supplied from the semiconductor layer through the insulating layer.
摘要翻译：半导体器件包括：半导体层; 设置在所述半导体层上的绝缘膜; 以及设置在绝缘膜上的电荷存储层。半导体层在其表面部分具有沟道形成区域。绝缘膜含有硅，锗和氧。电荷存储层能够存储从半导体层通过绝缘膜提供的电荷。制造半导体器件的方法包括：在半导体层的表面上形成氧化硅膜; 将锗引入到氧化硅膜中; 在氧化气氛下通过热处理形成含有硅，锗和氧的绝缘膜; 以及在所述绝缘膜上形成电荷存储层，所述电荷存储层能够将通过所述绝缘层从所述半导体层提供的电荷存储。

10. 发明申请

US20070018231A1 Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件，半导体器件和非易失性半导体存储器件的制造方法
公开(公告)号：US20070018231A1
公开(公告)日：2007-01-25
申请号：US11491054
申请日：2006-07-24
申请人： Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
发明人： Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/513 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42332 , H01L29/785 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.
摘要翻译：非易失性半导体存储器件包括通过在半导体衬底上层叠隧道绝缘膜，浮栅电极，多晶硅绝缘膜和控制栅极电极以及形成在衬底上的源极和漏极区域而形成的栅极部分。隧道绝缘膜具有夹在氧化硅膜之间的氮化硅膜的三层结构。氮化硅膜在面内方向上是连续的并且具有3-配位氮键，并且第二相邻的氮原子中的至少一个是氮。

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