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1. 发明授权

US08097503B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08097503B2
公开(公告)日：2012-01-17
申请号：US12926357
申请日：2010-11-12
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/337 , H01L21/8236
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.
摘要翻译：根据本发明实施例的制造半导体器件的方法包括在半导体衬底的表面上形成包括侧壁部分和底部的隔离沟槽，或者包括第一平面部分，第二平面部分部分和位于第一平面部分和第二平面部分之间的边界处的阶梯部分，并且将由微波产生的等离子体中产生的等离子体中的氧离子或氮化离子，射频波或电子回旋共振提供给侧壁部分以及通过向半导体衬底施加预定电压来隔离沟槽的底部或第一和第二平面部分和台阶部分的台阶部分，以进行侧壁部分和底部部分的各向异性氧化或各向异性氮化隔离沟槽或第一和第二平面部分以及台阶结构的阶梯部分。

2. 发明申请

US20120282773A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120282773A1
公开(公告)日：2012-11-08
申请号：US13487280
申请日：2012-06-04
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/302
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成其上表面和侧表面被暴露的导电膜和上表面暴露的绝缘膜。该方法还包括通过施加微波，射频波或电子回旋共振等将由等离子体产生的等离子体中包含的氧化离子或氮化离子供应到导电膜的暴露侧表面和绝缘膜的暴露的上表面对半导体衬底施加预定的电压，从而进行导电膜的暴露的侧表面和绝缘膜的暴露的上表面的各向异性氧化或各向异性氮化。

3. 发明申请

US20110065262A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110065262A1
公开(公告)日：2011-03-17
申请号：US12926357
申请日：2010-11-12
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/326
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.
摘要翻译：根据本发明实施例的制造半导体器件的方法包括在半导体衬底的表面上形成包括侧壁部分和底部的隔离沟槽，或者包括第一平面部分，第二平面部分部分和位于第一平面部分和第二平面部分之间的边界处的阶梯部分，并且将由微波产生的等离子体中产生的等离子体中的氧离子或氮化离子，射频波或电子回旋共振提供给侧壁部分以及通过向半导体衬底施加预定电压来隔离沟槽的底部或第一和第二平面部分和台阶部分的台阶部分，以进行侧壁部分和底部部分的各向异性氧化或各向异性氮化隔离沟槽或第一和第二平面部分以及台阶结构的阶梯部分。

4. 发明授权

US07858467B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07858467B2
公开(公告)日：2010-12-28
申请号：US12412962
申请日：2009-03-27
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/337 , H01L21/8238
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.
摘要翻译：根据本发明实施例的制造半导体器件的方法包括在半导体衬底的表面上形成包括侧壁部分和底部的隔离沟槽，或者包括第一平面部分，第二平面部分部分和位于第一平面部分和第二平面部分之间的边界处的阶梯部分，并且将由微波产生的等离子体中产生的等离子体中的氧离子或氮化离子，射频波或电子回旋共振提供给侧壁部分以及通过向半导体衬底施加预定电压来隔离沟槽的底部或第一和第二平面部分和台阶部分的台阶部分，以进行侧壁部分和底部部分的各向异性氧化或各向异性氮化隔离沟槽或第一和第二平面部分以及台阶结构的阶梯部分。

5. 发明授权

US08404537B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08404537B2
公开(公告)日：2013-03-26
申请号：US13487280
申请日：2012-06-04
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/337 , H01L21/8236
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成其上表面和侧表面被暴露的导电膜和上表面暴露的绝缘膜。该方法还包括通过施加微波，射频波或电子回旋共振等将由等离子体产生的等离子体中包含的氧化离子或氮化离子供应到导电膜的暴露侧表面和绝缘膜的暴露的上表面对半导体衬底施加预定的电压，从而进行导电膜的暴露的侧表面和绝缘膜的暴露的上表面的各向异性氧化或各向异性氮化。

6. 发明申请

US20120122294A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120122294A1
公开(公告)日：2012-05-17
申请号：US13326499
申请日：2011-12-15
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/762 , H01L21/28
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： In one embodiment, a method of manufacturing a semiconductor device includes successively forming first and second films to be processed on a semiconductor substrate. The method further includes removing a predetermined region of the second film by etching, to form a slit part including sidewall parts and a bottom part, the sidewall parts including side surfaces of the second film, and the bottom part including an upper surface of the first film. The method further includes supplying oxidizing ions or nitriding ions contained in plasma, generated by a microwave, a radio-frequency wave, or electron cyclotron resonance, to the sidewall parts and the bottom part of the slit part by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the slit part.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在半导体衬底上依次形成待处理的第一和第二膜。该方法还包括通过蚀刻去除第二膜的预定区域，以形成包括侧壁部分和底部的狭缝部分，所述侧壁部分包括第二膜的侧表面，并且底部包括第一膜的上表面电影。该方法还包括通过向半导体施加预定电压将由微波，射频波或电子回旋共振产生的等离子体中包含的氧化离子或氮化离子供应到狭缝部分的侧壁部分和底部。从而进行侧壁部和狭缝部的底部的各向异性氧化或各向异性氮化。

7. 发明授权

US08396546B2 Machine control device, machine system, machine control method, and recording medium storing machine control program 有权
标题翻译：机器控制装置，机器系统，机器控制方法和记录介质存储机器控制程序
公开(公告)号：US08396546B2
公开(公告)日：2013-03-12
申请号：US12799840
申请日：2010-05-03
申请人： Masayuki Hirata , Takufumi Yanagisawa , Yukiyasu Kamitani , Hiroshi Yokoi , Toshiki Yoshimine , Tetsu Goto , Ryohei Fukuma , Ryu Kato
发明人： Masayuki Hirata , Takufumi Yanagisawa , Yukiyasu Kamitani , Hiroshi Yokoi , Toshiki Yoshimine , Tetsu Goto , Ryohei Fukuma , Ryu Kato
IPC分类号： A61B5/04
CPC分类号： A61B5/0402 , A61B5/7267
摘要： A machine control device includes: first decoders for estimating, from brain signal information, which one of body movements a user performs or images, based on learning using pairs of movements performed by the user and brain signal information, the body movements going toward one of first to nth body postures; second decoders for estimating from the brain signal information, an correct rate on the body movement estimation, based on learning using pairs of correct rates of the estimation of body movements and the brain signal information; and electric prosthetic arm control section for controlling an electric prosthetic arm to change stepwise its posture between first to nth postures via at least one intermediate posture therebetween, the first to nth postures corresponding to the first to nth body postures. The first decoders perform the estimation only when the estimated correct rate exceeds a threshold. When the first decoders estimate that the body movements goes toward a body posture different from the current one, the electric prosthetic arm control section changes the posture of the machine by performing a part of substeps of change from one of the first to nth body postures toward the posture associated with the body posture toward which the estimated body movement goes. This configuration allows a user to control a brain-signal-based machine to perform a natural movement without a long-term training and much brain information.
摘要翻译：一种机器控制装置包括：第一解码器，用于基于使用用户执行的运动对的学习和脑信号信息来估计来自脑信号信息，用户执行的身体运动中的哪一个或图像，身体运动朝向第一到第n身体姿势; 第二解码器，用于基于使用身体运动的估计的正确速率和脑信号信息的学习来从脑信号信息估计身体运动估计的正确率; 以及电动假肢臂控制部，其用于控制电动假肢臂，通过其间的至少一个中间姿势，在第一至第n姿势之间逐步地改变其姿势，所述第一至第n姿势对应于所述第一至第n体姿势。第一解码器仅在估计的正确率超过阈值时执行估计。当第一解码器估计身体运动朝向与当前身体姿势不同的身体姿势时，电假肢臂控制部通过执行从第一至第n体姿势中的一个朝向的部分子步骤改变机器的姿势与所估计的身体运动所对应的身体姿势相关联的姿势。该配置允许用户控制基于脑信号的机器执行自然运动，而无需长期训练和大量信息。

8. 发明申请

US20100190317A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON OXIDE FILM FORMING METHOD 有权
标题翻译：半导体器件制造方法和氧化硅膜形成方法
公开(公告)号：US20100190317A1
公开(公告)日：2010-07-29
申请号：US12691483
申请日：2010-01-21
申请人： Kazuaki IWASAWA , Takeshi Hoshi , Keisuke Nakazawa , Shogo Matsuo , Takashi Nakao , Ryu Kato , Tetsuya Kai , Katsuyuki Sekine
发明人： Kazuaki IWASAWA , Takeshi Hoshi , Keisuke Nakazawa , Shogo Matsuo , Takashi Nakao , Ryu Kato , Tetsuya Kai , Katsuyuki Sekine
IPC分类号： H01L21/762
CPC分类号： H01L21/76229
摘要： A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.
摘要翻译：半导体器件制造方法在半导体衬底中具有形成元件隔离沟槽，在元件隔离沟槽的内部形成硅化合物膜，以便嵌入元件隔离沟槽，在第一温度下进行第一氧化处理以使表面所述硅化合物膜能够通过氧化剂和杂质而不允许含有硅原子的挥发性物质通过的挥发性物质排放防止层，并且在比所述第一温度高的第二温度下进行第二氧化处理温度以在元件隔离槽内形成被覆氧化硅膜。

9. 发明授权

US09192768B2 Stimulation signal generation device and stimulation signal generation method 有权
标题翻译：刺激信号发生装置和刺激信号产生方法
公开(公告)号：US09192768B2
公开(公告)日：2015-11-24
申请号：US13879118
申请日：2011-10-14
申请人： Hiroshi Yokoi , Ryu Kato , Tatsuhiro Nakamura , Soichiro Morishita , Osamu Yamamura
发明人： Hiroshi Yokoi , Ryu Kato , Tatsuhiro Nakamura , Soichiro Morishita , Osamu Yamamura
IPC分类号： A61B5/103 , A61N1/36 , A61B5/0482 , A61B5/0488 , A61B5/11 , A61B5/055 , A61B5/107 , A61B5/00 , A61H23/02 , A61H3/00
CPC分类号： A61N1/36103 , A61B5/0482 , A61B5/0488 , A61B5/055 , A61B5/1071 , A61B5/11 , A61B5/4528 , A61H3/00 , A61H23/02 , A61H2201/5002 , A61H2201/5005 , A61H2205/06 , A61H2205/088 , A61H2205/102 , A61H2205/12 , A61H2230/105 , A61N1/36003 , A61N1/36014 , A61N1/36021
摘要： Implementation including a brain activity data acquisition unit configured to acquire data on brain activity of a human body; a generator configured to generate a stimulation signal based on predetermined stimulation parameters or stimulation parameters determined from the data acquired by the brain activity data acquisition unit, the stimulation signal being to be applied, for activity of a specific brain region to be activated in order to move a joint of the human body, to a nerve corresponding to the specific brain region; and an output unit configured to output the stimulation signal generated by the generator.
摘要翻译：实施包括大脑活动数据获取单元，被配置为获取关于人体的脑活动的数据; 发生器，被配置为基于由脑活动数据获取单元获取的数据确定的预定刺激参数或刺激参数产生刺激信号，刺激信号被施加于要激活的特定脑区域的活动，以便将人体的关节移动到对应于特定脑区域的神经; 以及输出单元，被配置为输出由发生器产生的刺激信号。

10. 发明申请

US20110218453A1 Machine control device, machine system, machine control method, and recording medium storing machine control program 有权
标题翻译：机器控制装置，机器系统，机器控制方法和记录介质存储机器控制程序
公开(公告)号：US20110218453A1
公开(公告)日：2011-09-08
申请号：US12799840
申请日：2010-05-03
申请人： Masayuki Hirata , Takufumi Yanagisawa , Yukiyasu Kamitani , Hiroshi Yokoi , Toshiki Yoshimine , Tetsu Goto , Ryohei Fukuma , Ryu Kato
发明人： Masayuki Hirata , Takufumi Yanagisawa , Yukiyasu Kamitani , Hiroshi Yokoi , Toshiki Yoshimine , Tetsu Goto , Ryohei Fukuma , Ryu Kato
IPC分类号： A61B5/0402
CPC分类号： A61B5/0402 , A61B5/7267
摘要： A machine control device includes: first decoders for estimating, from brain signal information, which one of body movements a user performs or images, based on learning using pairs of movements performed by the user and brain signal information, the body movements going toward one of first to nth body postures; second decoders for estimating from the brain signal information, an correct rate on the body movement estimation, based on learning using pairs of correct rates of the estimation of body movements and the brain signal information; and electric prosthetic arm control section for controlling an electric prosthetic arm to change stepwise its posture between first to nth postures via at least one intermediate posture therebetween, the first to nth postures corresponding to the first to nth body postures. The first decoders perform the estimation only when the estimated correct rate exceeds a threshold. When the first decoders estimate that the body movements goes toward a body posture different from the current one, the electric prosthetic arm control section changes the posture of the machine by performing a part of substeps of change from one of the first to nth body postures toward the posture associated with the body posture toward which the estimated body movement goes. This configuration allows a user to control a brain-signal-based machine to perform a natural movement without a long-term training and much brain information.
摘要翻译：一种机器控制装置包括：第一解码器，用于基于使用用户执行的运动对的学习和脑信号信息来估计来自脑信号信息，用户执行的身体运动中的哪一个或图像，身体运动朝向第一到第n身体姿势; 第二解码器，用于基于使用身体运动的估计的正确速率和脑信号信息的学习来从脑信号信息估计身体运动估计的正确率; 以及电动假肢臂控制部，其用于控制电动假肢臂，通过其间的至少一个中间姿势，在第一至第n姿势之间逐步地改变其姿势，所述第一至第n姿势对应于所述第一至第n体姿势。第一解码器仅在估计的正确率超过阈值时执行估计。当第一解码器估计身体运动朝向与当前身体姿势不同的身体姿势时，电假肢臂控制部通过执行从第一至第n体姿势中的一个朝向的部分子步骤改变机器的姿势与所估计的身体运动所对应的身体姿势相关联的姿势。该配置允许用户控制基于脑信号的机器执行自然运动，而无需长期训练和大量信息。

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