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1. 发明授权

US09818714B2 Method of manufacturing substrate for chip packages and method of manufacturing chip package 有权
公开(公告)号：US09818714B2
公开(公告)日：2017-11-14
申请号：US14342497
申请日：2012-08-31
申请人： Tea Hyuk Kang , Hong Il Kim
发明人： Tea Hyuk Kang , Hong Il Kim
IPC分类号： H05K3/20 , H01L23/00 , H01L23/498 , H01L21/48 , H01L21/70 , H01L23/12 , H01L23/48 , H05K1/11 , H05K3/06 , H05K3/10 , H05K13/04 , H01L23/31
CPC分类号： H01L24/27 , H01L21/486 , H01L21/70 , H01L23/12 , H01L23/3121 , H01L23/3142 , H01L23/48 , H01L23/49827 , H01L24/48 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2924/00014 , H01L2924/10253 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/1815 , H01L2924/18301 , H05K1/115 , H05K3/067 , H05K3/10 , H05K13/046 , Y10T156/1056 , H01L2224/45099 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： Provided are a method of manufacturing a substrate for chip packages and a method of manufacturing a chip package, the method of manufacturing the substrate including: forming a lower adhesive layer in a lower part of an insulation film; forming an upper adhesive layer in an upper part of the insulation film to form a base material; forming via holes in the base material; and forming a circuit pattern layer on the upper adhesive layer, so it is effective to improve adhesion power between the molding resin and the insulation film at the time of manufacturing a chip package later.

2. 发明授权

US09422618B2 Method and apparatus for forming coating layer with nano multi-layer 有权
标题翻译：用纳米多层形成涂层的方法和装置
公开(公告)号：US09422618B2
公开(公告)日：2016-08-23
申请号：US13529165
申请日：2012-06-21
申请人： In Woong Lyo , Woong Pyo Hong , Kwang Hoon Choi , Hyuk Kang , Sang Jin Park , Yoon Suk Oh
发明人： In Woong Lyo , Woong Pyo Hong , Kwang Hoon Choi , Hyuk Kang , Sang Jin Park , Yoon Suk Oh
IPC分类号： C23C14/00 , C23C14/32 , C23C14/02 , C23C14/34 , C23C14/54 , C23C14/58 , C23C28/00
CPC分类号： C23C14/025 , C23C14/0021 , C23C14/0641 , C23C14/14 , C23C14/32 , C23C14/325 , C23C14/345 , C23C14/505 , C23C14/54 , C23C14/586 , C23C28/322 , C23C28/34 , C23C28/42 , C23F15/00
摘要： Disclosed is a method and apparatus for forming a coating layer using a physical vapor deposition apparatus equipped with a sputtering apparatus and an arc ion plating apparatus, comprising: a first coating step of forming a Mo coating layer on a base material using a the sputtering apparatus and a Mo target and Ar gas; a nitrating step of forming a nitride film forming condition using an arc ion plating apparatus and Ar gas and N2 gas; a second coating step of forming a nano composite coating layer of Cr—Mo—N using the Mo target and Ar gas of the sputtering apparatus and the Ar gas, N2 gas and a Cr source of the arc ion plating apparatus at the same time; and a multi-coating step of forming a multi-layer having alternating Cr—Mo—N nano composite coating layers and Mo coating layers by revolving the base material around a central pivot.
摘要翻译：公开了一种使用具有溅射装置和电弧离子镀装置的物理气相沉积装置形成涂层的方法和装置，包括：第一涂覆步骤，使用溅射装置在基材上形成Mo涂层和Mo靶和Ar气; 使用电弧离子镀装置和Ar气体和N 2气体形成氮化物成膜条件的硝化步骤; 使用溅射装置的Mo靶和Ar气体以及电弧离子电镀装置的Ar气体，N 2气体和Cr源同时形成Cr-Mo-N的纳米复合涂层的第二涂覆步骤; 以及通过使基材围绕中心枢轴旋转而形成具有交替的Cr-Mo-N纳米复合涂层和Mo涂层的多层的多涂层步骤。

3. 发明授权

US09054226B2 Semiconductor devices and methods of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US09054226B2
公开(公告)日：2015-06-09
申请号：US13546415
申请日：2012-07-11
申请人： Sung-Ho Lee , Jin Choi , Yong-Ho Yoo , Jong-Hyuk Kang , Hyun-Joo Cha , Hee-Dong Park , Tae-Jung Park
发明人： Sung-Ho Lee , Jin Choi , Yong-Ho Yoo , Jong-Hyuk Kang , Hyun-Joo Cha , Hee-Dong Park , Tae-Jung Park
IPC分类号： H01L27/108 , H01L49/02
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/60
摘要： A semiconductor device includes a plurality of lower electrodes on a substrate, with each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction, a plurality of first supporting layer patterns contacting the sidewalls of the lower electrodes, the first supporting layer patterns extending in the first direction between ones of the lower electrodes adjacent in the second direction, a plurality of second supporting layer patterns contacting the sidewalls of the lower electrodes, the second supporting layer pattern extending in the second direction between ones of the lower electrodes adjacent in the first direction, the plurality of second supporting layer patterns being spaced apart from the plurality of first supporting layer patterns in the height direction.
摘要翻译：半导体器件包括在基片上的多个下电极，其中每个下电极从衬底沿高度方向延伸并且包括侧壁，下电极在第一方向和第二方向彼此间隔开，与下电极的侧壁接触的多个第一支撑层图案，第一支撑层图案沿着第一方向在第二方向上相邻的下电极之间延伸;多个第二支撑层图案，其与下部电极的侧壁接触; 电极，所述第二支撑层图案沿着所述第二方向在与所述第一方向相邻的所述下电极中的所述第二方向延伸，所述多个第二支撑层图案在所述高度方向上与所述多个第一支撑层图案间隔开。

4. 发明授权

US08949494B2 User equipment connectable to an external device 有权
标题翻译：用户设备可连接到外部设备
公开(公告)号：US08949494B2
公开(公告)日：2015-02-03
申请号：US13540112
申请日：2012-07-02
申请人： Jae-Hun Jung , Shin-Hyuk Kang , You-Jin Kang , Byeong-Tae Kim , Jung-Wook Lee , Hyuk-Jun Jung , Jae-Uk Cha
发明人： Jae-Hun Jung , Shin-Hyuk Kang , You-Jin Kang , Byeong-Tae Kim , Jung-Wook Lee , Hyuk-Jun Jung , Jae-Uk Cha
IPC分类号： G06F3/01 , G06F1/16 , G06F13/40
CPC分类号： G06F1/1632 , G06F13/4081
摘要： Provided are user equipment connectable to an external device and a method for establishing a connection between user equipment including second constituent elements and an external device including first constituent elements and controlling the external device. The method may include sensing the connection to the external device, obtaining first constituent element information from the external device through the connection, wherein the first constituent element information includes information on first constituent elements of the external device, selecting target constituent elements to control from the first constituent elements of the external device based on the obtained first constituent element information, reconfiguring a control path for controlling the selected target constituent elements of the external device, and controlling the selected target constituent elements of the external device through the reconfigured control path.
摘要翻译：提供了可连接到外部设备的用户设备以及用于在包括第二组成元素的用户设备和包括第一组成元素的外部设备之间建立连接的方法以及控制外部设备的方法。该方法可以包括感测与外部设备的连接，通过连接从外部设备获得第一组成元素信息，其中第一组成元素信息包括关于外部设备的第一组成元素的信息，从基于所获得的第一组成元素信息，外部设备的第一组成元素，重新配置用于控制外部设备的所选择的目标组成元素的控制路径，以及通过重新配置的控制路径来控制所选择的外部设备的组成元素。

5. 发明授权

US08871336B2 Coating layer with low-friction for vehicle component and method for producing the same 有权
标题翻译：用于车辆部件的低摩擦的涂层及其制造方法
公开(公告)号：US08871336B2
公开(公告)日：2014-10-28
申请号：US13537358
申请日：2012-06-29
申请人： Kwang Hoon Choi , In Woong Lyo , Woong Pyo Hong , Hyuk Kang
发明人： Kwang Hoon Choi , In Woong Lyo , Woong Pyo Hong , Hyuk Kang
IPC分类号： C23C14/06 , C23C14/22 , C23C14/14 , B32B15/04 , B32B9/04 , C23C14/34
CPC分类号： B32B9/04 , B32B9/041 , B32B15/04 , C23C14/06 , C23C14/0641 , C23C14/0688 , C23C14/14 , C23C14/22 , C23C14/34 , Y10T428/24975 , Y10T428/265 , Y10T428/31678
摘要： The present invention provides a low-friction coating layer for vehicle components comprising: a Ti layer on a surface of a base material; a TiN layer on the Ti layer surface; a TiAgN layer on the TiN layer surface; and an Ag layer transferred on the TiAgN layer surface, and a method for producing the same.
摘要翻译：本发明提供了一种用于车辆部件的低摩擦涂层，包括：在基材表面上的Ti层; Ti层表面上的TiN层; 在TiN层表面上的TiAgN层; 以及在TiAgN层表面上转移的Ag层及其制造方法。

6. 发明授权

US08816417B2 Semiconductor devices and methods of forming semiconductor devices 有权
标题翻译：半导体器件和形成半导体器件的方法
公开(公告)号：US08816417B2
公开(公告)日：2014-08-26
申请号：US12659111
申请日：2010-02-25
申请人： Sanghun Jeon , Jong-Hyuk Kang , Heungkyu Park , Jongwook Lee
发明人： Sanghun Jeon , Jong-Hyuk Kang , Heungkyu Park , Jongwook Lee
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L29/7841 , H01L27/108 , H01L27/10802
摘要： A semiconductor device includes a back bias dielectric including a negative fixed charge, a gate electrode overlapping the back bias dielectric, a semiconductor layer disposed between the gate electrode and the back bias dielectric, and a gate dielectric disposed between the semiconductor layer and the gate electrode, wherein the negative fixed charge accumulates holes at a surface of the semiconductor layer facing the back bias dielectric.
摘要翻译：半导体器件包括负偏电介质，其包括负的固定电荷，与所述背偏电介质重叠的栅电极，设置在所述栅电极和所述背偏置电介质之间的半导体层，以及设置在所述半导体层和所述栅电极之间的栅极电介质其中负固定电荷在面向背偏电介质的半导体层的表面处累积空穴。

7. 发明授权

US08718641B2 Cell search method in wireless communication system 失效
标题翻译：无线通信系统中的小区搜索方法
公开(公告)号：US08718641B2
公开(公告)日：2014-05-06
申请号：US13273780
申请日：2011-10-14
申请人： Young Seok Baek , Bon Tae Koo , Jung Ho Myung , Joon Hyuk Kang
发明人： Young Seok Baek , Bon Tae Koo , Jung Ho Myung , Joon Hyuk Kang
IPC分类号： H04W4/00 , H04B7/00
CPC分类号： H04W48/16 , H04J11/0076
摘要： Provided is a cell search method in a wireless communication system. According to the cell search method, when detecting SSS in order to search a cell group ID in 3GPP LTE communication, it is possible to reduce the computational complexity for SSS detection by selecting the sequence group of which cross-correlation between initially grouped SSS sequences is a predetermined value or more, computing cross-correlation with the sequences in the selected sequence group, and extracting a cell group ID through detection of the SSS sequence having the highest cross-correlation.
摘要翻译：提供了一种无线通信系统中的小区搜索方法。根据小区搜索方法，当检测到SSS以便在3GPP LTE通信中搜索小区组ID时，可以通过选择初始分组的SSS序列之间的互相关的序列组来降低SSS检测的计算复杂度计算与所选序列组中的序列的互相关，以及通过检测具有最高互相关的SSS序列来提取小区组ID。

8. 发明申请

US20130134033A1 METHOD AND APPARATUS FOR FORMING COATING LAYER WITH NANO MULTI-LAYER 有权
标题翻译：用纳米多层形成涂层的方法和装置
公开(公告)号：US20130134033A1
公开(公告)日：2013-05-30
申请号：US13529165
申请日：2012-06-21
申请人： In Woong Lyo , Woong Pyo Hong , Kwang Hoon Choi , Hyuk Kang , Sang Jin Park , Yoon Suk Oh
发明人： In Woong Lyo , Woong Pyo Hong , Kwang Hoon Choi , Hyuk Kang , Sang Jin Park , Yoon Suk Oh
IPC分类号： C23C14/34
CPC分类号： C23C14/025 , C23C14/0021 , C23C14/0641 , C23C14/14 , C23C14/32 , C23C14/325 , C23C14/345 , C23C14/505 , C23C14/54 , C23C14/586 , C23C28/322 , C23C28/34 , C23C28/42 , C23F15/00
摘要： Disclosed is a method and apparatus for forming a coating layer using a physical vapor deposition apparatus equipped with a sputtering apparatus and an arc ion plating apparatus, comprising: a first coating step of forming a Mo coating layer on a base material using a the sputtering apparatus and a Mo target and Ar gas; a nitrating step of forming a nitride film forming condition using an arc ion plating apparatus and Ar gas and N2 gas; a second coating step of forming a nano composite coating layer of Cr—Mo—N using the Mo target and Ar gas of the sputtering apparatus and the Ar gas, N2 gas and a Cr source of the arc ion plating apparatus at the same time; and a multi-coating step of forming a multi-layer having alternating Cr—Mo—N nano composite coating layers and Mo coating layers by revolving the base material around a central pivot.
摘要翻译：公开了一种使用具有溅射装置和电弧离子镀装置的物理气相沉积装置形成涂层的方法和装置，包括：第一涂覆步骤，使用溅射装置在基材上形成Mo涂层和Mo靶和Ar气; 使用电弧离子镀装置和Ar气体和N 2气体形成氮化物成膜条件的硝化步骤; 使用溅射装置的Mo靶和Ar气体以及电弧离子电镀装置的Ar气体，N 2气体和Cr源同时形成Cr-Mo-N的纳米复合涂层的第二涂覆步骤; 以及通过使基材围绕中心枢轴旋转而形成具有交替的Cr-Mo-N纳米复合涂层和Mo涂层的多层的多涂层步骤。

9. 发明申请

US20130122315A1 COATING LAYER WITH LOW-FRICTION FOR VEHICLE COMPONENT AND METHOD FOR PRODUCING THE SAME 有权
公开(公告)号：US20130122315A1
公开(公告)日：2013-05-16
申请号：US13537358
申请日：2012-06-29
申请人： Kwang Hoon Choi , In Woong Lyo , Woong Pyo Hong , Hyuk Kang
发明人： Kwang Hoon Choi , In Woong Lyo , Woong Pyo Hong , Hyuk Kang
IPC分类号： B32B15/04 , C23C14/34
CPC分类号： B32B9/04 , B32B9/041 , B32B15/04 , C23C14/06 , C23C14/0641 , C23C14/0688 , C23C14/14 , C23C14/22 , C23C14/34 , Y10T428/24975 , Y10T428/265 , Y10T428/31678
摘要： The present invention provides a low-friction coating layer for vehicle components comprising: a Ti layer on a surface of a base material; a TiN layer on the Ti layer surface; a TiAgN layer on the TiN layer surface; and an Ag layer transferred on the TiAgN layer surface, and a method for producing the same.

10. 发明授权

US08309417B2 Vertical-type semiconductor devices and methods of manufacturing the same 有权
标题翻译：垂直型半导体器件及其制造方法
公开(公告)号：US08309417B2
公开(公告)日：2012-11-13
申请号：US13271446
申请日：2011-10-12
申请人： Yong-Hoon Son , Jong-Wook Lee , Jong-Hyuk Kang
发明人： Yong-Hoon Son , Jong-Wook Lee , Jong-Hyuk Kang
IPC分类号： H01L21/336
CPC分类号： H01L27/11582 , H01L21/02524 , H01L21/02587 , H01L21/02598 , H01L21/02675 , H01L21/28282 , H01L21/28518 , H01L21/30604 , H01L21/32133 , H01L27/1052 , H01L27/11568 , H01L27/11578 , H01L27/1158 , H01L29/4234 , H01L29/45 , H01L29/665 , H01L29/66666 , H01L29/66787 , H01L29/66833 , H01L29/792 , H01L29/7926
摘要： In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated.
摘要翻译：在垂直型存储器件和垂直型存储器件的制造方法中，垂直存储器件包括设置在衬底上的线状绝缘层图形，柱状单晶半导体图案设置在两侧壁上设置在每个单晶半导体图案的侧壁上的绝缘层图案和晶体管。晶体管沿着单晶半导体图案的垂直方向排列，因此存储器件可以高度集成。

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