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1. 发明申请

US20120217165A1 Metal deposition using seed layers 失效
标题翻译：使用种子层的金属沉积
公开(公告)号：US20120217165A1
公开(公告)日：2012-08-30
申请号：US12932372
申请日：2011-02-24
申请人： Hsien-Ping Feng , Gang Chen , Yu Bo , Zhifeng Ren , Shuo Chen , Bed Poudel
发明人： Hsien-Ping Feng , Gang Chen , Yu Bo , Zhifeng Ren , Shuo Chen , Bed Poudel
IPC分类号： C25D5/10 , C25D5/02 , C25D5/54
CPC分类号： C25D5/022 , C25D5/10 , C25D5/54
摘要： Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.
摘要翻译：公开了在衬底上形成导电金属层的方法，其采用种子层来增强结合，特别是平滑的低粗糙度或疏水性基底。在本发明的一个方面，种子层可以通过将纳米颗粒施加到基底的表面上而形成; 并且通过将电导金属电镀到种子层上来实现金属化，由此纳米颗粒用作金属沉积的成核位置。在另一种方法中，种子层可以通过自组装接头材料如含硫硅烷材料形成。

2. 发明申请

US20060219566A1 Method for fabricating metal layer 审中-公开
标题翻译：金属层制造方法
公开(公告)号：US20060219566A1
公开(公告)日：2006-10-05
申请号：US11092594
申请日：2005-03-29
申请人： Hsi-Kuei Cheng , Hsien-Ping Feng , Ming-Yuan Cheng , Jung-Chih Tsao , Shih-Chi Lin , Ray Chuang
发明人： Hsi-Kuei Cheng , Hsien-Ping Feng , Ming-Yuan Cheng , Jung-Chih Tsao , Shih-Chi Lin , Ray Chuang
IPC分类号： C25D5/02
CPC分类号： C25D7/123 , C25D5/02 , C25D5/04 , C25D17/001 , C25D21/10 , H01L21/2855 , H01L21/2885 , H01L21/76843 , H01L21/76877
摘要： A method for filling a structure using electrochemical deposition includes a barrier layer and a seed layer being deposited on one or more surfaces of the structure. Metal is electrochemically deposited to fill the structure in an electrochemical plating cell, wherein the electroplating surface of the substrate is tilted and rotated during electrochemical deposition.
摘要翻译：使用电化学沉积填充结构的方法包括沉积在该结构的一个或多个表面上的阻挡层和种子层。电化学沉积金属以填充电化学电镀单元中的结构，其中基板的电镀表面在电化学沉积期间倾斜并旋转。

3. 发明申请

US20060216930A1 Post ECP multi-step anneal/H2 treatment to reduce film impurity 有权
标题翻译：后期ECP多步退火/ H2处理以降低膜杂质
公开(公告)号：US20060216930A1
公开(公告)日：2006-09-28
申请号：US11347946
申请日：2006-02-06
申请人： Hsien-Ping Feng , Jung-Chih Tsao , Hsi-Kuei Cheng , Chih-Tsung Lee , Ming-Yuan Cheng , Steven Lin , Ray Chuang , Chi-Wen Liu
发明人： Hsien-Ping Feng , Jung-Chih Tsao , Hsi-Kuei Cheng , Chih-Tsung Lee , Ming-Yuan Cheng , Steven Lin , Ray Chuang , Chi-Wen Liu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76877 , H01L21/2885
摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.
摘要翻译：描述了在双镶嵌方案中形成铜互连的方法。在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积第二铜层超过沟槽。在第二退火步骤之后，CMP工艺使铜层平坦化。通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。

4. 发明申请

US20060196765A1 Metallization target optimization method providing enhanced metallization layer uniformity 审中-公开
标题翻译：金属化目标优化方法提供增强的金属化层均匀性
公开(公告)号：US20060196765A1
公开(公告)日：2006-09-07
申请号：US11074524
申请日：2005-03-07
申请人： Hsi-Kuei Cheng , Chieh-Tsao Wang , Hsien-Ping Feng , Min-Yuan Cheng , Jung-Chin Tsao , Steven Lin , Ray Chuang , Chyi-Tsong NI
发明人： Hsi-Kuei Cheng , Chieh-Tsao Wang , Hsien-Ping Feng , Min-Yuan Cheng , Jung-Chin Tsao , Steven Lin , Ray Chuang , Chyi-Tsong NI
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/165 , C23C14/0641 , C23C14/0682 , C23C14/3421 , C23C14/54 , H01J37/32568 , H05K3/16
摘要： A method for forming a microelectronic layer while employing a sputtering method employs a reactor chamber. A sputtering target and a substrate are positioned within the reactor chamber, along with a sputtering target heater at a side of sputtering target opposite the substrate. At least one of: (1) a heater to sputtering target distance; (2) sputtering power; (3) deposition time; and (4) sputtering gas flow rate, is controlled in accord with a pre-determined function of sputtering target lifetime to provide enhanced uniformity of the deposited layer.
摘要翻译：采用溅射法形成微电子层的方法采用反应室。溅射靶和基板位于反应器室内，与溅射靶相对的基板上的溅射靶加热器一起。以下至少一个：（1）加热器以溅射目标距离; （2）溅射功率; （3）沉积时间; 和（4）溅射气体流速，根据溅射靶寿命的预定功能进行控制，以提供沉积层的均匀性。

5. 发明授权

US06985222B2 Chamber leakage detection by measurement of reflectivity of oxidized thin film 失效
标题翻译：通过测量氧化薄膜的反射率进行室内泄漏检测
公开(公告)号：US06985222B2
公开(公告)日：2006-01-10
申请号：US10423379
申请日：2003-04-25
申请人： Hsi-Kuei Cheng , Chu-Chang Chen , Ting-Chun Wang , Szu-An Wu , Ying-Lang Wang , Hsien-Ping Feng
发明人： Hsi-Kuei Cheng , Chu-Chang Chen , Ting-Chun Wang , Szu-An Wu , Ying-Lang Wang , Hsien-Ping Feng
IPC分类号： G01N21/88
CPC分类号： G01N21/55 , G01N21/8422 , G01N2201/0227
摘要： A system and method for detecting chamber leakage by measuring the reflectivity of an oxidized thin film. In a preferred embodiment, a method of detecting leaks in a chamber includes providing a first monitor workpiece, placing the first monitor workpiece in the chamber, and forming at least one film on the first monitor workpiece. The reflectivity of the least one film of the first monitor workpiece is measured, wherein the reflectivity indicates whether there are leaks in the at least one seal of the chamber. In another embodiment, the method includes providing a second monitor workpiece, placing the second monitor workpiece in the chamber, and forming at least one film on the second monitor workpiece. The reflectivity of the at least one film of the second monitor workpiece is measured, and the second monitor workpiece film reflectivity is compared to the first monitor workpiece film reflectivity.
摘要翻译：通过测量氧化薄膜的反射率来检测室泄漏的系统和方法。在优选实施例中，检测腔室泄漏的方法包括提供第一监测工件，将第一监测器工件放置在腔室中，以及在第一监测器工件上形成至少一个膜。测量第一监视器工件的至少一个膜的反射率，其中反射率指示在室的至少一个密封件中是否有泄漏。在另一个实施例中，该方法包括提供第二监视器工件，将第二监视器工件放置在腔室中，以及在第二监视器工件上形成至少一个膜。测量第二监测工件的至少一个膜的反射率，并将第二监测工件膜反射率与第一监测工件膜反射率进行比较。

6. 发明申请

US20050245064A1 Method for preventing voids in metal interconnects 有权
标题翻译：防止金属互连中空隙的方法
公开(公告)号：US20050245064A1
公开(公告)日：2005-11-03
申请号：US10835315
申请日：2004-04-28
申请人： Jung-Chih Tsao , Chi-Wen Liu , Si-Kua Cheng , Che-Tsao Wang , Steven Lin , Hsien-Ping Feng , Chen-Peng Fan
发明人： Jung-Chih Tsao , Chi-Wen Liu , Si-Kua Cheng , Che-Tsao Wang , Steven Lin , Hsien-Ping Feng , Chen-Peng Fan
IPC分类号： H01L21/00 , H01L21/4763 , H01L21/687 , H01L21/768
CPC分类号： H01L21/68728 , H01L21/67109 , H01L21/68707 , H01L21/76877
摘要： A novel method for preventing the formation of voids in metal interconnects fabricated on a wafer, particularly during a thermal anneal process, is disclosed. The method includes fabricating metal interconnects between metal lines on a wafer. During a thermal anneal process carried out to reduce electrical resistance of the interconnects, the wafer is positioned in spaced-apart relationship to a wafer heater. This spacing configuration facilitates enhanced stabilility and uniformity in heating of the wafer by reducing the presence of particles on and providing a uniform flow of heated air or gas against and the wafer backside. This eliminates or at least substantially reduces the formation of voids in the interconnects during the anneal process.
摘要翻译：公开了一种用于防止在晶片上制造的金属互连中空隙形成的新方法，特别是在热退火工艺期间。该方法包括在晶片上的金属线之间制造金属互连。在进行用于降低互连的电阻的热退火工艺期间，晶片以与晶片加热器隔开的关系定位。这种间隔结构通过减少加热的空气或气体抵靠和晶片背面的颗粒的存在而提高晶片加热的稳定性和均匀性。这在退火过程中消除或至少基本上减少了互连件中空隙的形成。

7. 发明授权

US07667835B2 Apparatus and method for preventing copper peeling in ECP 有权
标题翻译：用于防止ECP中铜剥落的装置和方法
公开(公告)号：US07667835B2
公开(公告)日：2010-02-23
申请号：US11510951
申请日：2006-08-28
申请人： Hsi-Kuei Cheng , Jung-Chih Tsao , Hsien-Ping Feng , Ming-Yuan Cheng , Steven Lin , Ray Chuang
发明人： Hsi-Kuei Cheng , Jung-Chih Tsao , Hsien-Ping Feng , Ming-Yuan Cheng , Steven Lin , Ray Chuang
IPC分类号： G01N21/00 , G01N21/55 , G01B11/28 , C25D21/12 , H01L21/00
CPC分类号： C25D17/00 , C25D7/123 , C25D17/001 , C25D21/12 , G01N21/55 , G01N2021/8411 , H01L21/67005 , H01L21/67253
摘要： An apparatus and method for preventing the peeling of electroplated metal from a wafer, is disclosed. The apparatus includes a seed layer detector system having a light source and a reflectivity detector. According to the method, the light source emits a beam of light onto a wafer and the reflectivity detector receives the light reflected from the wafer. The reflectivity of the wafer surface is measured to determine the presence or absence of a seed layer on the wafer, as well as whether the seed layer has a minimum thickness for optimum electroplating of a metal onto the seed layer.
摘要翻译：公开了一种用于防止电镀金属从晶片剥离的装置和方法。该装置包括具有光源和反射率检测器的种子层检测器系统。根据该方法，光源将光束发射到晶片上，反射率检测器接收从晶片反射的光。测量晶片表面的反射率以确定晶片上晶种层的存在或不存在，以及种子层是否具有用于最佳电镀金属到籽晶层上的最小厚度。

8. 发明授权

US07432192B2 Post ECP multi-step anneal/H2 treatment to reduce film impurity 有权
标题翻译：后期ECP多步退火/ H2处理以降低膜杂质
公开(公告)号：US07432192B2
公开(公告)日：2008-10-07
申请号：US11347946
申请日：2006-02-06
申请人： Hsien-Ping Feng , Jung-Chih Tsao , Hsi-Kuei Cheng , Chih-Tsung Lee , Ming-Yuan Cheng , Steven Lin , Ray Chuang , Chi-Wen Liu
发明人： Hsien-Ping Feng , Jung-Chih Tsao , Hsi-Kuei Cheng , Chih-Tsung Lee , Ming-Yuan Cheng , Steven Lin , Ray Chuang , Chi-Wen Liu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76877 , H01L21/2885
摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.
摘要翻译：描述了在双镶嵌方案中形成铜互连的方法。在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积第二铜层超过沟槽。在第二退火步骤之后，CMP工艺使铜层平坦化。通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。

9. 发明申请

US20080047827A1 Apparatus and method for preventing copper peeling in ECP 有权
标题翻译：用于防止ECP中铜剥落的装置和方法
公开(公告)号：US20080047827A1
公开(公告)日：2008-02-28
申请号：US11510951
申请日：2006-08-28
申请人： Hsi-Kuei Cheng , Jung-Chih Tsao , Hsien-Ping Feng , Ming-Yuan Cheng , Steven Lin , Ray Chuang
发明人： Hsi-Kuei Cheng , Jung-Chih Tsao , Hsien-Ping Feng , Ming-Yuan Cheng , Steven Lin , Ray Chuang
IPC分类号： C25B9/00
CPC分类号： C25D17/00 , C25D7/123 , C25D17/001 , C25D21/12 , G01N21/55 , G01N2021/8411 , H01L21/67005 , H01L21/67253
摘要： An apparatus and method for preventing the peeling of electroplated metal from a wafer, is disclosed. The apparatus includes a seed layer detector system having a light source and a reflectivity detector. According to the method, the light source emits a beam of light onto a wafer and the reflectivity detector receives the light reflected from the wafer. The reflectivity of the wafer surface is measured to determine the presence or absence of a seed layer on the wafer, as well as whether the seed layer has a minimum thickness for optimum electroplating of a metal onto the seed layer.
摘要翻译：公开了一种用于防止电镀金属从晶片剥离的装置和方法。该装置包括具有光源和反射率检测器的种子层检测器系统。根据该方法，光源将光束发射到晶片上，反射率检测器接收从晶片反射的光。测量晶片表面的反射率以确定晶片上晶种层的存在或不存在，以及种子层是否具有用于最佳电镀金属到籽晶层上的最小厚度。

10. 发明授权

US07256120B2 Method to eliminate plating copper defect 有权
标题翻译：消除电镀铜缺陷的方法
公开(公告)号：US07256120B2
公开(公告)日：2007-08-14
申请号：US11024917
申请日：2004-12-28
申请人： Jung-Chin Tsao , Chi-Wen Liu , Hsien-Ping Feng , Hsi-Kuei Cheng , Steven Lin , Min-Yuan Cheng
发明人： Jung-Chin Tsao , Chi-Wen Liu , Hsien-Ping Feng , Hsi-Kuei Cheng , Steven Lin , Min-Yuan Cheng
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/02068 , H01L21/76861 , H01L21/76862 , H01L21/76873 , H01L21/76876
摘要： A method of forming a metal layer with reduced defects comprising providing a structure having a dielectric layer formed over it, forming a dielectric layer having an opening, lining the opening with a metal seed layer, treating the metal seed layer with a cleaning process to remove contaminates from it, and forming a metal layer upon the metal seed layer.
摘要翻译：一种形成具有减少的缺陷的金属层的方法，包括提供其上形成有电介质层的结构，形成具有开口的电介质层，用金属种子层衬套开口，用清洁工艺处理金属种子层以除去从其中污染，并在金属种子层上形成金属层。

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