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1. 发明申请

US20090023255A1 Method for Reshaping Silicon Surfaces with Shallow Trench Isolation 有权
标题翻译：用浅沟槽隔离重新成形硅表面的方法
公开(公告)号：US20090023255A1
公开(公告)日：2009-01-22
申请号：US11778558
申请日：2007-07-16
申请人： Yu-Hsiung Wang , Wen-Ting Chu , Eric Chen , Hsien-Wei Chin
发明人： Yu-Hsiung Wang , Wen-Ting Chu , Eric Chen , Hsien-Wei Chin
IPC分类号： H01L21/336
CPC分类号： H01L29/7833 , H01L21/76224
摘要： A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.
摘要翻译：提出了一种通过用牺牲层重塑硅表面来制造半导体器件的方法。在本发明中，形成牺牲电介质层和去除牺牲电介质层的步骤被重复多次，以便从场氧化物附近的硅表面去除尖锐的边缘。本发明的另一方面包括制造一种MOSFET晶体管，其将多个牺牲层的形成和去除结合到该工艺中。

2. 发明授权

US5646057A Method for a MOS device manufacturing 失效
标题翻译： MOS器件制造方法
公开(公告)号：US5646057A
公开(公告)日：1997-07-08
申请号：US524153
申请日：1995-09-01
申请人： Chwen-Ming Liu , Jenn-Ming Huang , Hsien-Wei Chin , Huan-Chung You , Jang-Cheng Hsieh
发明人： Chwen-Ming Liu , Jenn-Ming Huang , Hsien-Wei Chin , Huan-Chung You , Jang-Cheng Hsieh
IPC分类号： H01L21/28 , H01L21/8234
CPC分类号： H01L21/28176 , H01L21/8234 , Y10S148/003 , Y10S438/91
摘要： A method is provided for improving the performance characteristics of the MOS devices contained within an integrated circuit that has been subjected to a rapid thermal anneal. After the rapid thermal anneal the integrated circuit is heated for more than about 30 minutes at a temperature of more than about 430.degree. C. in a gaseous atmosphere that contains hydrogen, typically forming gas.
摘要翻译：提供了一种用于改善包含在经受快速热退火的集成电路中的MOS器件的性能特性的方法。在快速热退火之后，在含有氢的气体气氛（通常形成气体）中，在大于约430℃的温度下将集成电路加热超过约30分钟。

3. 发明授权

US08124494B2 Method for reshaping silicon surfaces with shallow trench isolation 有权
标题翻译：用浅沟槽隔离重新形成硅表面的方法
公开(公告)号：US08124494B2
公开(公告)日：2012-02-28
申请号：US11778558
申请日：2007-07-16
申请人： Yu-Hsiung Wang , Wen-Ting Chu , Eric Chen , Hsien-Wei Chin
发明人： Yu-Hsiung Wang , Wen-Ting Chu , Eric Chen , Hsien-Wei Chin
IPC分类号： H01L21/76
CPC分类号： H01L29/7833 , H01L21/76224
摘要： A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.
摘要翻译：提出了一种通过用牺牲层重塑硅表面来制造半导体器件的方法。在本发明中，形成牺牲电介质层和去除牺牲电介质层的步骤被重复多次，以便从场氧化物附近的硅表面去除尖锐的边缘。本发明的另一方面包括制造一种MOSFET晶体管，其将多个牺牲层的形成和去除结合到该工艺中。

4. 发明授权

US6017828A Method for preventing backside polysilicon peeling in a 4T+2R SRAM process 失效
标题翻译：在4T + 2R SRAM工艺中防止背面多晶硅剥离的方法
公开(公告)号：US6017828A
公开(公告)日：2000-01-25
申请号：US861172
申请日：1997-05-21
申请人： Hung-Che Liao , Hsien-Wei Chin , Chih-Ming Chen
发明人： Hung-Che Liao , Hsien-Wei Chin , Chih-Ming Chen
IPC分类号： H01L21/768 , H01L21/8244 , H01L21/322
CPC分类号： H01L27/11 , H01L21/768 , Y10S257/903 , Y10S257/904 , Y10S438/928
摘要： The present invention is a method for preventing backside polysilicon peeling in 4T+2R SRAM process. This invention utilizes forming oxide cap layer on the backside of the wafer to protect the backside polysilicon. Thus, the backside polysilicon is free from peeling and damage.
摘要翻译：本发明是防止4T + 2R SRAM工艺中背面多晶硅剥离的方法。本发明利用晶片背面的形成氧化物盖层来保护背面多晶硅。因此，背面多晶硅没有剥离和损坏。

5. 发明授权

US5926697A Method of forming a moisture guard ring for integrated circuit applications 失效
标题翻译：形成用于集成电路应用的防潮环的方法
公开(公告)号：US5926697A
公开(公告)日：1999-07-20
申请号：US947793
申请日：1997-10-09
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Jin-Yuan Lee , Hsien Wei Chin
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Jin-Yuan Lee , Hsien Wei Chin
IPC分类号： H01L21/02 , H01L21/761 , H01L23/525 , H01L21/76
CPC分类号： H01L28/87 , H01L21/761 , H01L23/5258 , H01L2924/0002
摘要： An improved and new structure and method for forming a guard ring in an integrated circuit having at least one level of polysilicon wiring has been developed. The guard ring is formed without necessitating additional manufacturing process steps and the guard ring is bonded to the semiconductor substrate, thereby providing a superior barrier to diffusion of moisture and contaminants from a window in the insulating layers to the semiconductor device regions.
摘要翻译：已经开发了用于在具有至少一个级别的多晶硅布线的集成电路中形成保护环的改进和新的结构和方法。保护环形成，而不需要额外的制造工艺步骤，并且保护环结合到半导体衬底，从而为水分和污染物从绝缘层中的窗口扩散到半导体器件区域提供了优越的屏障。

6. 发明授权

US5705436A Method for forming a poly load resistor 失效
标题翻译：多负载电阻的形成方法
公开(公告)号：US5705436A
公开(公告)日：1998-01-06
申请号：US703085
申请日：1996-08-26
申请人： Hsien Wei Chin , Jhon-Jhy Liaw
发明人： Hsien Wei Chin , Jhon-Jhy Liaw
IPC分类号： H01L21/02 , H01L21/8244
CPC分类号： H01L28/20 , H01L27/11
摘要： A physical implementation and method for achieving it are described for a load resistor and bus line subcircuit such as might be used in an SRAM cell. This was achieved by using two layers of polysilicon. The first polysilicon layer has low resistivity and serves to make effective contact to the drain regions of the FETs involved in the circuit. The second polysilicon layer has high resistivity and is used to form the load resistor as well as the collector bus line and resistor-drain connection. Formation of the latter two objects is achieved by providing a refractory metal underlay to the second polysilicon layer in the appropriate areas and then heating the structure so as to convert said refractory metal to its silicide. This process avoids the use of an ion implantation step during which some encroachment of the ions could occur, thereby retaining good control of the resistor dimensions.
摘要翻译：描述了用于实现其的物理实现和方法，用于负载电阻器和总线线路电路，例如可用于SRAM单元。这是通过使用两层多晶硅来实现的。第一多晶硅层具有低电阻率并且用于有效接触与电路相关的FET的漏极区域。第二多晶硅层具有高电阻率，用于形成负载电阻以及集电极母线和电阻 - 漏极连接。后两个物体的形成是通过在合适的区域中向第二多晶硅层提供难熔金属底层，然后加热该结构以将所述难熔金属转化为其硅化物来实现的。该过程避免使用离子注入步骤，在该步骤期间可能会发生一些离子侵入，从而保持对电阻器尺寸的良好控制。

7. 发明授权

US08253206B2 Method for reshaping silicon surfaces with shallow trench isolation 有权
公开(公告)号：US08253206B2
公开(公告)日：2012-08-28
申请号：US13221654
申请日：2011-08-30
申请人： Yu-Hsiung Wang , Wen-Ting Chu , Eric Chen , Hsien-Wei Chin
发明人： Yu-Hsiung Wang , Wen-Ting Chu , Eric Chen , Hsien-Wei Chin
IPC分类号： H01L21/70
CPC分类号： H01L29/7833 , H01L21/76224
摘要： A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.

8. 发明申请

US20110309417A1 Method for Reshaping Silicon Surfaces with Shallow Trench Isolation 有权
标题翻译：用浅沟槽隔离重新成形硅表面的方法
公开(公告)号：US20110309417A1
公开(公告)日：2011-12-22
申请号：US13221654
申请日：2011-08-30
申请人： Yu-Hsiung Wang , Wen-Ting Chu , Eric Chen , Hsien-Wei Chin
发明人： Yu-Hsiung Wang , Wen-Ting Chu , Eric Chen , Hsien-Wei Chin
IPC分类号： H01L29/78 , H01L29/06
CPC分类号： H01L29/7833 , H01L21/76224
摘要： A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.
摘要翻译：提出了一种通过用牺牲层重塑硅表面来制造半导体器件的方法。在本发明中，形成牺牲电介质层和去除牺牲电介质层的步骤被重复多次，以便从场氧化物附近的硅表面去除尖锐的边缘。本发明的另一方面包括制造一种MOSFET晶体管，其将多个牺牲层的形成和去除结合到该工艺中。

9. 发明授权

US07016029B2 Detection of lens anti-reflective coating decay by undesired residue detection 失效
公开(公告)号：US07016029B2
公开(公告)日：2006-03-21
申请号：US10167162
申请日：2002-06-11
申请人： Hung-Chih Chen , Chao-Hsiung Wang , Niahn-Mauh Shih , Hsien-Wei Chin
发明人： Hung-Chih Chen , Chao-Hsiung Wang , Niahn-Mauh Shih , Hsien-Wei Chin
IPC分类号： G01N21/00
CPC分类号： G03F7/7065 , G01N21/47 , G01N21/9501 , G03F7/70808 , G03F7/70941 , G03F7/70958
摘要： Detecting decay of equipment lens anti-reflective coating (ARC) by detecting undesired residue is disclosed. The undesired residue detected correlates with the decay of the ARC, where a greater amount of undesired residue detected indicates a greater level of the decay. The undesired residue is detected due to stray light reflected by the ARC because of its decay. In the context of semiconductor fabrication equipment, photoresist residue results from negative photoresist on a semiconductor wafer, and may be viewed on one or more scribe lines of a mask within a field of view of the lens of the semiconductor fabrication equipment.

10. 发明授权

US5965927A Integrated circuit having an opening for a fuse 有权
标题翻译：具有用于保险丝的开口的集成电路
公开(公告)号：US5965927A
公开(公告)日：1999-10-12
申请号：US157513
申请日：1998-09-21
申请人： Jin-Yuan Lee , Chue-San Yoo , Hsien Wei Chin
发明人： Jin-Yuan Lee , Chue-San Yoo , Hsien Wei Chin
IPC分类号： H01L23/525 , H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , Y10S148/055
摘要： An improved structure and method of forming a protective layer over an opening in insulation layers over a fuse is presented. The protective layer prevents contaminates from entering the exposed insulation layers in a fuse opening while not interfering with the laser trimming of the fuse. An opening through the layers over a fuse is made forming vertical sidewalls which expose portions of the insulation layers. A protective layer is formed over the insulation layer, the sidewalls and fuse thus preventing contaminates from diffusing into the exposed insulation layers. A second opening is made in the protective layer over the fuse link to allow a laser beam to melt the underlying fuse link.
摘要翻译：提出了在保险丝上的绝缘层的开口上形成保护层的改进的结构和方法。保护层防止污染物进入保险丝开口中暴露的绝缘层，而不会干扰保险丝的激光修整。形成穿过熔丝的层的开口形成垂直侧壁，其暴露部分绝缘层。在绝缘层，侧壁和熔断体上形成保护层，从而防止污染物扩散到暴露的绝缘层中。在熔断体上方的保护层中形成第二个开口，以允许激光束熔化下面的熔断体。

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