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1. 发明申请

US20120106006A1 MAGNETIC SENSOR HAVING IMPROVED RESISTANCE TO THERMAL STRESS INDUCED INSTABILITY 有权
标题翻译：具有改善耐热应力诱发不稳定性的磁传感器
公开(公告)号：US20120106006A1
公开(公告)日：2012-05-03
申请号：US12914926
申请日：2010-10-28
申请人： Satoru Araki , Hardayal S. Gill , Hiroaki Chihaya , Dustin W. Erickson , Haiwen Xi , Chang Man Park
发明人： Satoru Araki , Hardayal S. Gill , Hiroaki Chihaya , Dustin W. Erickson , Haiwen Xi , Chang Man Park
IPC分类号： G11B5/48 , G11B5/187
CPC分类号： G11B5/607 , B82Y25/00 , G01R33/093 , G11B5/3106 , G11B5/3133 , G11B5/3906 , G11B5/3967
摘要： A magnetic read sensor having improved robustness to withstand thermal variations resulting from thermal fly height heating. Improved thermal robustness comes as a result of improved pinned layer pinning. The read head includes an AFM layer having an increased thickness to provide a higher blocking temperature. The read head further includes a pinned layer structure that includes a first magnetic layer adjacent to and exchange coupled with the AFM layer. The first layer comprises a Co—Fe layer with an increased Fe content of 20-30 atomic percent. The pinned layer structure also includes a second magnetic layer that is antiparallel coupled with the AP1 layer. The AP2 layer can be a multi-layer structure that includes a layer of CoFe, a layer of Co—Fe—Hf formed on the layer of Co—Fe, a layer of Co—Fe—B formed on the layer of Co—Fe—Hf, and a second layer of Co—Fe formed on the layer of Co—Fe—B.
摘要翻译：磁读取传感器具有改进的鲁棒性，以承受由热飞高高度加热引起的热变化。由于改进了固定层钉扎，提高了热稳定性。读头包括具有增加的厚度以提供更高的阻挡温度的AFM层。读取头还包括钉扎层结构，其包括与AFM层相邻并与AFM层交换耦合的第一磁性层。第一层包括Fe含量高于20-30原子％的Co-Fe层。钉扎层结构还包括与AP1层反平行耦合的第二磁性层。 AP2层可以是多层结构，其包括CoFe层，Co-Fe层上形成的Co-Fe-Hf层，Co-Fe层上形成的Co-Fe-B层和在Co-Fe-B层上形成的第二层Co-Fe层。

2. 发明申请

US20110261487A1 MATERIAL FOR USE IN A TMR READ GAP WITHOUT ADVERSELY AFFECTING THE TMR EFFECT 有权
标题翻译：用于TMR读取差距的材料，不会对TMR效应产生不利影响
公开(公告)号：US20110261487A1
公开(公告)日：2011-10-27
申请号：US12916256
申请日：2010-10-29
申请人： SATORU ARAKI , Diane L. Brown , Hiroaki Chihaya , Dustin W. Erickson , David J. Seagle
发明人： SATORU ARAKI , Diane L. Brown , Hiroaki Chihaya , Dustin W. Erickson , David J. Seagle
IPC分类号： G11B5/127 , C25D5/12 , C23C14/34
CPC分类号： G11B5/255 , B82Y10/00 , B82Y25/00 , C25D5/12 , G11B5/00821 , G11B5/23 , G11B5/3909 , G11B5/3912 , G11B5/3958 , G11B5/3977 , G11B5/398
摘要： Structures and methods for fabrication servo and data heads of tape modules are provided. The servo head may have two shield layers spaced apart by a plurality of gap layers and a sensor. Similarly, the data head may have two shield layers spaced apart by a plurality of gap layers and a sensor. The distance between the shield layers of the servo head may be greater than the distance between the shield layers of the data head. The material of the gap layers may include tantalum or an alloy of nickel and chromium. The material for the gap layers permits deposition of gap layers with sufficiently small surface roughness to prevent distortion of the tape module and increase the stability of the tape module operation.
摘要翻译：提供了用于制造磁带模块的伺服和数据磁头的结构和方法。伺服头可以具有由多个间隙层和传感器隔开的两个屏蔽层。类似地，数据头可以具有由多个间隙层和传感器隔开的两个屏蔽层。伺服头的屏蔽层之间的距离可以大于数据头的屏蔽层之间的距离。间隙层的材料可以包括钽或镍和铬的合金。用于间隙层的材料允许以足够小的表面粗糙度沉积间隙层，以防止带模块的变形并增加带模块操作的稳定性。

3. 发明申请

US20100103564A1 TUNNEL JUNCTION TYPE MAGNETO-RESISTIVE HEAD 有权
标题翻译：隧道接头式电磁头
公开(公告)号：US20100103564A1
公开(公告)日：2010-04-29
申请号：US12563943
申请日：2009-09-21
申请人： Koichi Nishioka , Hiroaki Chihaya
发明人： Koichi Nishioka , Hiroaki Chihaya
IPC分类号： G11B5/33 , C23C14/38
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912
摘要： As recording density of sensors is increased, it is desired to lower the areal resistivity (RA) of TMR sensors. Decreasing RA to 1.0 Ωμm2 or below badly influences the read signal since the interlayer coupling magnetic field (Hint) between the pinned layer and the free layer increases sharply and impedes the free rotation of magnetization of the free layer. According to one embodiment, a tunnel junction type magneto-resistive head solves this problem by having a layered film comprising an underlying layer, a crystalline orientation control layer, an antiferromagnetic layer, a first ferromagnetic layer, an antiparallel coupling layer, a second ferromagnetic layer, an insulation barrier layer, and a third ferromagnetic layer between a lower magnetic shield layer and an upper magnetic shield layer, wherein a crystallographic plane of the antiferromagnetic layer is directed parallel to a film surface by growing the antiferromagnetic layer substantially conformably on the crystalline orientation control layer.
摘要翻译：由于传感器的记录密度增加，所以希望降低TMR传感器的面电阻率（RA）。由于被钉扎层和自由层之间的层间耦合磁场（Hint）急剧增加并且阻碍自由层的磁化自由旋转，因此将RA降低到1.0＆OHgr;μm2或更低严重影响读取信号。根据一个实施例，隧道结型磁阻头通过具有包括下层，结晶取向控制层，反铁磁层，第一铁磁层，反平行耦合层，第二铁磁层的层状膜来解决该问题绝缘阻挡层和在下磁屏蔽层和上磁屏蔽层之间的第三铁磁层，其中反铁磁性层的结晶平面通过使反铁磁层基本上顺应生长在结晶取向上而指向膜表面控制层。

4. 发明授权

US08867177B2 Magnetic sensor having improved resistance to thermal stress induced instability 有权
标题翻译：具有改善的耐热应力诱发不稳定性的磁传感器
公开(公告)号：US08867177B2
公开(公告)日：2014-10-21
申请号：US12914926
申请日：2010-10-28
申请人： Satoru Araki , Hardayal S. Gill , Hiroaki Chihaya , Dustin W. Erickson , Haiwen Xi , Chang Man Park
发明人： Satoru Araki , Hardayal S. Gill , Hiroaki Chihaya , Dustin W. Erickson , Haiwen Xi , Chang Man Park
IPC分类号： G11B5/33 , G11B5/39 , G11B5/31 , B82Y25/00 , G01R33/09 , G11B5/60
CPC分类号： G11B5/607 , B82Y25/00 , G01R33/093 , G11B5/3106 , G11B5/3133 , G11B5/3906 , G11B5/3967
摘要： A magnetic read sensor having improved robustness to withstand thermal variations resulting from thermal fly height heating. Improved thermal robustness comes as a result of improved pinned layer pinning. The read head includes an AFM layer having an increased thickness to provide a higher blocking temperature. The read head further includes a pinned layer structure that includes a first magnetic layer adjacent to and exchange coupled with the AFM layer. The first layer comprises a Co—Fe layer with an increased Fe content of 20-30 atomic percent. The pinned layer structure also includes a second magnetic layer that is antiparallel coupled with the AP1 layer. The AP2 layer can be a multi-layer structure that includes a layer of CoFe, a layer of Co—Fe—Hf formed on the layer of Co—Fe, a layer of Co—Fe—B formed on the layer of Co—Fe—Hf, and a second layer of Co—Fe formed on the layer of Co—Fe—B.
摘要翻译：磁读取传感器具有改进的鲁棒性，以承受由热飞高高度加热引起的热变化。由于改进了固定层钉扎，提高了热稳定性。读头包括具有增加的厚度以提供更高的阻挡温度的AFM层。读取头还包括钉扎层结构，其包括与AFM层相邻并与AFM层交换耦合的第一磁性层。第一层包括Fe含量高于20-30原子％的Co-Fe层。钉扎层结构还包括与AP1层反平行耦合的第二磁性层。 AP2层可以是多层结构，其包括CoFe层，Co-Fe层上形成的Co-Fe-Hf层，Co-Fe层上形成的Co-Fe-B层和在Co-Fe-B层上形成的第二层Co-Fe层。

5. 发明授权

US08254067B2 Tunnel junction type magneto-resistive head 有权
标题翻译：隧道结型磁阻头
公开(公告)号：US08254067B2
公开(公告)日：2012-08-28
申请号：US12563943
申请日：2009-09-21
申请人： Koichi Nishioka , Hiroaki Chihaya
发明人： Koichi Nishioka , Hiroaki Chihaya
IPC分类号： G11B5/39 , C23C14/34
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912
摘要： As recording density of sensors is increased, it is desired to lower the areal resistivity (RA) of TMR sensors. Decreasing RA to 1.0 Ωμm2 or below badly influences the read signal since the interlayer coupling magnetic field (Hint) between the pinned layer and the free layer increases sharply and impedes the free rotation of magnetization of the free layer. According to one embodiment, a tunnel junction type magneto-resistive head solves this problem by having a layered film comprising an underlying layer, a crystalline orientation control layer, an antiferromagnetic layer, a first ferromagnetic layer, an antiparallel coupling layer, a second ferromagnetic layer, an insulation barrier layer, and a third ferromagnetic layer between a lower magnetic shield layer and an upper magnetic shield layer, wherein a crystallographic plane of the antiferromagnetic layer is directed parallel to a film surface by growing the antiferromagnetic layer substantially conformably on the crystalline orientation control layer.
摘要翻译：由于传感器的记录密度增加，所以希望降低TMR传感器的面电阻率（RA）。由于被钉扎层和自由层之间的层间耦合磁场（Hint）急剧增加并且阻碍自由层的磁化自由旋转，因此将RA降低到1.0＆OHgr;μm2或更低严重影响读取信号。根据一个实施例，隧道结型磁阻头通过具有包括下层，结晶取向控制层，反铁磁层，第一铁磁层，反平行耦合层，第二铁磁层的层状膜来解决该问题绝缘阻挡层和在下磁屏蔽层和上磁屏蔽层之间的第三铁磁层，其中反铁磁性层的结晶平面通过使反铁磁层基本上顺应生长在结晶取向上而指向膜表面控制层。

6. 发明授权

US08804287B2 Material for use in a TMR read gap without adversely affecting the TMR effect 有权
标题翻译：用于TMR读取间隙的材料，不会对TMR影响产生不利影响
公开(公告)号：US08804287B2
公开(公告)日：2014-08-12
申请号：US12916256
申请日：2010-10-29
申请人： Satoru Araki , Diane L. Brown , Hiroaki Chihaya , Dustin W. Erickson , David J. Seagle
发明人： Satoru Araki , Diane L. Brown , Hiroaki Chihaya , Dustin W. Erickson , David J. Seagle
IPC分类号： G11B5/33
CPC分类号： G11B5/255 , B82Y10/00 , B82Y25/00 , C25D5/12 , G11B5/00821 , G11B5/23 , G11B5/3909 , G11B5/3912 , G11B5/3958 , G11B5/3977 , G11B5/398
摘要： Structures and methods for fabrication servo and data heads of tape modules are provided. The servo head may have two shield layers spaced apart by a plurality of gap layers and a sensor. Similarly, the data head may have two shield layers spaced apart by a plurality of gap layers and a sensor. The distance between the shield layers of the servo head may be greater than the distance between the shield layers of the data head. The material of the gap layers may include tantalum or an alloy of nickel and chromium. The material for the gap layers permits deposition of gap layers with sufficiently small surface roughness to prevent distortion of the tape module and increase the stability of the tape module operation.
摘要翻译：提供了用于制造磁带模块的伺服和数据磁头的结构和方法。伺服头可以具有由多个间隙层和传感器隔开的两个屏蔽层。类似地，数据头可以具有由多个间隙层和传感器隔开的两个屏蔽层。伺服头的屏蔽层之间的距离可以大于数据头的屏蔽层之间的距离。间隙层的材料可以包括钽或镍和铬的合金。用于间隙层的材料允许以足够小的表面粗糙度沉积间隙层，以防止带模块的变形并增加带模块操作的稳定性。

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