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1. 发明授权

US09129690B2 Method and system for providing magnetic junctions having improved characteristics 有权
标题翻译：提供具有改进特性的磁结的方法和系统
公开(公告)号：US09129690B2
公开(公告)日：2015-09-08
申请号：US13553965
申请日：2012-07-20
申请人： Chang-Man Park , Dustin William Erickson , Mohamad Towfik Krounbi
发明人： Chang-Man Park , Dustin William Erickson , Mohamad Towfik Krounbi
IPC分类号： G11C11/00 , G11C11/16 , H01L43/08 , H01L43/12
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12
摘要： A method and apparatus provide a magnetic memory including magnetic junctions on a substrate. The apparatus include an RIE chamber and an ion milling chamber. The chambers are coupled such that the magnetic memory is movable between the chambers without exposing the magnetic memory to ambient. The method provides magnetic junction layers and a hard mask layer on the magnetic junction layers. A hard mask is formed from the hard mask layer using an RIE. The magnetic junction layers are ion milled after the RIE and without exposing the magnetic memory to an ambient after the RIE. The ion milling defines at least part of each magnetic junction. A magnetic junction may be provided. The magnetic junction includes pinned, nonmagnetic spacer, and free layers. The free layer has a width of not more than twenty nanometers and is switchable when a write current is passed through the magnetic junction.
摘要翻译：一种方法和装置提供包括在基底上的磁结的磁存储器。该装置包括RIE室和离子研磨室。这些室被耦合，使得磁存储器可以在室之间移动，而不将磁存储器暴露于环境。该方法在磁结层上提供磁结层和硬掩模层。使用RIE从硬掩模层形成硬掩模。在RIE之后，磁结层被离子研磨，并且在RIE之后没有将磁存储器暴露在环境中。离子铣削限定了每个磁结的至少一部分。可以提供磁结。磁结包括固定的，非磁性的隔离层和自由层。自由层具有不超过二十纳米的宽度，并且当写入电流通过磁性结时可自由切换。

2. 发明授权

US08296930B2 Method for manufacturing a magnetoresistive sensor having a flat shield 有权
标题翻译：具有平面屏蔽的磁阻传感器的制造方法
公开(公告)号：US08296930B2
公开(公告)日：2012-10-30
申请号：US12645323
申请日：2009-12-22
申请人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
发明人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/112 , G11B5/3912 , G11B5/398 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield to be very thin.
摘要翻译：一种用于制造磁阻传感器的方法，其导致传感器具有非常平坦的顶部磁屏蔽。该过程包括沉积多个传感器层，然后在传感器层上沉积薄的高密度碳CMP停止层，并在CMP停止层上形成掩模。执行离子铣削来定义传感器。然后沉积薄的绝缘层和磁性硬偏置层。进行化学机械抛光以除去掩模，并执行反应离子蚀刻以除去剩余的碳CMP停止层。因为CMP停止层非常致密且硬，所以可以使其非常薄。这意味着当通过反应离子蚀刻去除时，在传感器上几乎没有凹口，从而允许上部屏蔽（沉积在其上）非常薄。

3. 发明申请

US20090035462A1 REPEATABILITY FOR RF MGO TMR BARRIER LAYER PROCESS BY IMPLEMENTING TI PASTING 失效
标题翻译：通过实施TI PASTING对RF MGO TMR BARRIER层工艺的可重复性
公开(公告)号：US20090035462A1
公开(公告)日：2009-02-05
申请号：US11832318
申请日：2007-08-01
申请人： Chang Man Park
发明人： Chang Man Park
IPC分类号： C23C16/00 , C23C16/54
CPC分类号： C23C14/564 , C23C14/081 , C23C14/16 , C23C16/4404
摘要： A method and apparatus for performing pasting in a deposition chamber. The method includes depositing a Ti pasting layer on at least the interior portion of the deposition chamber by sputtering a Ti target, thereby reducing contaminants in the deposition chamber for subsequent depositions. The method also includes, after depositing the Ti pasting layer on at least the interior portion of the deposition chamber, depositing a second layer on a wafer within the deposition chamber. The second layer comprises at least one of MgO and Mg.
摘要翻译：一种用于在沉积室中进行粘贴的方法和装置。该方法包括通过溅射Ti靶在至少沉积室的内部上沉积Ti粘贴层，从而减少沉积室中的污染物以便随后的沉积。该方法还包括在至少沉积室的内部部分上沉积Ti粘贴层之后，在沉积室内的晶片上沉积第二层。第二层包括MgO和Mg中的至少一种。

4. 发明授权

US07417832B1 Magnetoresistive structure having a novel specular and filter layer combination 失效
标题翻译：具有新颖镜面和滤光层组合的磁阻结构
公开(公告)号：US07417832B1
公开(公告)日：2008-08-26
申请号：US11114255
申请日：2005-04-26
申请人： Dustin W. Erickson , Chang-Man Park , Shin Funada , Lena Miloslavsky
发明人： Dustin W. Erickson , Chang-Man Park , Shin Funada , Lena Miloslavsky
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/32 , H01F41/325 , H01L43/08
摘要： A method and system for providing a magnetoresistive structure is disclosed. The magnetoresistive structure includes a pinned layer, a nonmagnetic spacer layer, a free layer, a filter layer, a specular layer, a barrier layer, and a capping layer. The nonmagnetic spacer layer resides between the pinned layer and the free layer. The free layer is electrically conductive and resides between the filter layer and the nonmagnetic spacer layer. The specular layer includes a first material and is electrically insulating. The barrier layer resides between the specular oxide layer and the capping layer. The barrier layer is nonmagnetic and includes a second material different material from the first material. The capping layer includes a third material different from the second material.
摘要翻译：公开了一种用于提供磁阻结构的方法和系统。磁阻结构包括钉扎层，非磁性间隔层，自由层，过滤层，镜面层，阻挡层和覆盖层。非磁性间隔层位于被钉扎层和自由层之间。自由层是导电的并且位于过滤层和非磁性间隔层之间。镜面层包括第一材料并且是电绝缘的。阻挡层位于镜面氧化物层和覆盖层之间。阻挡层是非磁性的并且包括与第一材料不同的材料的第二材料。封盖层包括与第二材料不同的第三材料。

5. 发明授权

US07170725B1 Magnetic sensor having an aluminum-nitride seed layer for an anti-ferromagnetic layer 有权
标题翻译：具有用于反铁磁层的氮化铝种子层的磁传感器
公开(公告)号：US07170725B1
公开(公告)日：2007-01-30
申请号：US10932671
申请日：2004-09-01
申请人： Min Zhou , Chang-Man Park
发明人： Min Zhou , Chang-Man Park
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , G11B2005/3996
摘要： A magnetic sensor is disclosed that is disposed between top and bottom magnetic shield layers, the sensor comprising: a nonferromagnetic layer disposed beneath the top shield layer; a magnetically soft layer disposed beneath the nonferromagnetic layer, the magnetically soft layer having a magnetization that rotates in response to an applied magnetic field; a ferromagnetic pinned layer disposed beneath the magnetically soft layer; an antiferromagnetic layer disposed beneath the ferromagnetic layer; and an aluminum-nitride seed layer disposed between the antiferromagnetic layer and the bottom shield layer. The aluminum-nitride seed layer decreases sense current shunting, increases pinning strength, increases magnetoresistance and/or increases yield.
摘要翻译：公开了一种磁传感器，其设置在顶部和底部磁屏蔽层之间，该传感器包括：设置在顶部屏蔽层下方的非铁磁层; 设置在所述非铁磁层下方的磁软层，所述磁软层具有响应于所施加的磁场而旋转的磁化; 设置在磁软层下方的铁磁性钉扎层; 设置在铁磁层下方的反铁磁层; 以及设置在反铁磁性层和底部屏蔽层之间的氮化铝种子层。氮化铝种子层减少感测电流分流，增加钉扎强度，增加磁阻和/或增加产量。

6. 发明授权

US5221800A One step air oxidation of cyclohexane to produce adipic acid 失效
标题翻译：环己烷一步空气氧化产生己二酸
公开(公告)号：US5221800A
公开(公告)日：1993-06-22
申请号：US875993
申请日：1992-04-29
申请人： Chang-Man Park , Nancy S. Goroff
发明人： Chang-Man Park , Nancy S. Goroff
IPC分类号： C07C51/31
CPC分类号： C07C51/313
摘要： A process for the manufacture of adipic acid is disclosed. In this process, cyclohexane is oxidized in an aliphatic monobasic acid solvent in the presence of a soluble cobalt salt wherein water is continuously or intermittently added to the reaction system after the initiation of oxidation of cyclohexane as indicated by a suitable means of detection, and wherein the reaction is conducted at a temperature of about 50.degree. C. to about 150.degree. C. at an oxygen partial pressure of about 50 to about 420 pounds per square inch absolute.
摘要翻译：公开了一种制备己二酸的方法。在该方法中，环己烷在脂溶性一元酸溶剂中在可溶性钴盐存在下被氧化，其中如适当的检测方法所示，环己烷开始氧化后连续地或间歇地加入水中的反应体系中，反应在大约50℃至大约150℃的温度下进行，氧分压为约50至约420磅/平方英寸绝对值。

7. 发明授权

US5124461A Process for the production of trimellitic anhydride with improved color 失效
标题翻译：用于生产具有改进颜色的偏苯三酸酐的方法
公开(公告)号：US5124461A
公开(公告)日：1992-06-23
申请号：US740606
申请日：1991-08-05
申请人： Chang-Man Park
发明人： Chang-Man Park
IPC分类号： C07C51/573 , C08G63/20 , C08G73/16
CPC分类号： C08G73/16 , C07C51/573 , C08G63/20
摘要： A process for the production of trimellitic anhydride with improved color is disclosed. The process comprises heat treating trimellitic anhydride in the presence of oxides of boron or hydrated oxides of boron followed by fractionation. Trimellitic anhydride is used in the manufacture of polyesters and polyamide-imides.
摘要翻译：公开了一种生产具有改进颜色的偏苯三酸酐的方法。该方法包括在硼的氧化物或硼的水合氧化物存在下热分解偏苯三酸酐，然后分馏。偏苯三酸酐用于制造聚酯和聚酰胺 - 酰亚胺。

8. 发明授权

US08786039B2 Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy 有权
标题翻译：用于提供具有工程化的垂直磁各向异性的磁结的方法和系统
公开(公告)号：US08786039B2
公开(公告)日：2014-07-22
申请号：US13723172
申请日：2012-12-20
申请人： Dmytro Apalkov , Chang-Man Park , Roman Chepulskyy , Alexey Vasilyevitch Khvalkovskiy , Xueti Tang
发明人： Dmytro Apalkov , Chang-Man Park , Roman Chepulskyy , Alexey Vasilyevitch Khvalkovskiy , Xueti Tang
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/224 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer has an engineered perpendicular magnetic anisotropy. The engineered PMA includes at least one of an insulating insertion layer induced PMA, a stress induced PMA, PMA due to interface symmetry breaking, and a lattice mismatch induced PMA. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括参考层，非磁性间隔层和自由层。非磁性间隔层位于参考层和自由层之间。自由层具有工程垂直磁各向异性。工程化的PMA包括绝缘插入层诱导的PMA，由于界面对称断裂引起的应力诱导的PMA，PMA和晶格失配诱导的PMA中的至少一种。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

9. 发明授权

US08679301B2 Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting 失效
标题翻译：通过实施Ti粘贴，RF MgO TMR势垒层工艺的重复性
公开(公告)号：US08679301B2
公开(公告)日：2014-03-25
申请号：US11832318
申请日：2007-08-01
申请人： Chang Man Park
发明人： Chang Man Park
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/081 , C23C14/16 , C23C16/4404
摘要： A method and apparatus for performing pasting in a deposition chamber. The method includes depositing a Ti pasting layer on at least the interior portion of the deposition chamber by sputtering a Ti target, thereby reducing contaminants in the deposition chamber for subsequent depositions. The method also includes, after depositing the Ti pasting layer on at least the interior portion of the deposition chamber, depositing a second layer on a wafer within the deposition chamber. The second layer comprises at least one of MgO and Mg.
摘要翻译：一种用于在沉积室中进行粘贴的方法和装置。该方法包括通过溅射Ti靶在至少沉积室的内部上沉积Ti粘贴层，从而减少沉积室中的污染物以便随后的沉积。该方法还包括在至少沉积室的内部部分上沉积Ti粘贴层之后，在沉积室内的晶片上沉积第二层。第二层包括MgO和Mg中的至少一种。

10. 发明授权

US08427791B2 Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same 有权
标题翻译：具有磁性插入层的磁性隧道结及其制造方法
公开(公告)号：US08427791B2
公开(公告)日：2013-04-23
申请号：US12953233
申请日：2010-11-23
申请人： Zheng Gao , Liubo Hong , Richard Hsiao , Sangmun Oh , Chando Park , Chang-Man Park
发明人： Zheng Gao , Liubo Hong , Richard Hsiao , Sangmun Oh , Chando Park , Chang-Man Park
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T428/1114 , Y10T428/1121
摘要： According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.
摘要翻译：根据一个实施例，磁头包括具有晶体结构的阻挡层，阻挡层上方的第一磁性层，第一磁性层上方的磁性插入层和磁性插入层上方的第二磁性层，第二磁性层层具有纹理的面心立方（fcc）结构。第一磁性层包括具有晶体结构的高自旋极化磁性材料，并且与第二磁性层的结晶结构相比，结晶的结晶特性与阻挡层的晶体结构更相似，并且磁性插入层包括具有与阻挡层的晶体结构相比，晶体结构和结晶特性更类似于第二磁性层的晶体结构。根据更多实施例描述附加的磁头结构和制造磁头的方法。

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