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1. 发明授权

US5355382A Composite laser array support 失效
标题翻译：复合激光阵列支持
公开(公告)号：US5355382A
公开(公告)日：1994-10-11
申请号：US156229
申请日：1993-11-22
申请人： Gregory J. Kovacs , Harlan F. Chung , G. A. Neville Connell , R. Donald Yingling, Jr. , Rose M. Donaldson , Thomas L. Paoli
发明人： Gregory J. Kovacs , Harlan F. Chung , G. A. Neville Connell , R. Donald Yingling, Jr. , Rose M. Donaldson , Thomas L. Paoli
IPC分类号： H01S3/04 , H01S3/23 , H01S5/00 , H01S5/022 , H01S5/024 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4025 , H01S5/02236 , H01S5/02272 , H01S5/02484 , H01S5/4043
摘要： Nonmonolithic laser arrays having lasing elements mounted on a composite support that enables accurate positioning and separation of the lasing elements, and that enables low thermal, optical, and electrical cross-talk. The support includes a low thermal diffusivity region surrounded by high thermal diffusivity regions which have defined mounting surfaces onto which the lasing elements mount. Heat generated in the lasing elements is conducted away by the high thermal diffusivity regions, while the low thermal diffusivity region reduces thermal cross-talk between the lasing elements. Beneficially, the support assists current flow to (or from) the lasing elements.
摘要翻译：具有安装在复合支撑上的激光元件的非单晶激光器阵列，其能够精确地定位和分离激光元件，并且能够实现低热，光学和电气串扰。该支撑件包括由具有限定的激光元件安装在其上的安装表面的高热扩散区域包围的低热扩散区域。激光元件中产生的热量由高热扩散区域传导掉，而低热扩散区域减小激光元件之间的热串扰。有利的是，支持有助于当前流向（或从）激光元件。

2. 依法登记的发明

USH1264H Method of in situ stoiciometric and geometrical photo induced modifications to compound thin films during epitaxial growth and applications thereof 失效
标题翻译：外延生长过程中复合薄膜的原位置换和几何光诱导修饰方法及其应用
公开(公告)号：USH1264H
公开(公告)日：1993-12-07
申请号：US691068
申请日：1991-04-24
申请人： John E. Epler , Harlan F. Chung , Thomas L. Paoli
发明人： John E. Epler , Harlan F. Chung , Thomas L. Paoli
IPC分类号： C23C16/04 , C23C16/52 , H01L21/20
CPC分类号： C23C16/52 , C23C16/047
摘要： In situ geometrical and stoichiometric properties of deposited films are brought about by employing a scanned irradiation source directed to a spot which is scanned across the growth surface in a chemical vaGOVERNMENT RIGHTSThe Government has certain rights in this invention pursuant to Contract No. 86F173100 awarded by the Defense Advanced Research Projects Agency (DARPA).

3. 发明授权

US5631918A Laser diode arrays with close beam offsets 失效
标题翻译：具有近光束偏移的激光二极管阵列
公开(公告)号：US5631918A
公开(公告)日：1997-05-20
申请号：US156222
申请日：1993-11-22
申请人： Gregory J. Kovacs , Rose M. Donaldson , Harlan F. Chung , William J. Mosby , Eva E. Taggart , Thomas L. Paoli
发明人： Gregory J. Kovacs , Rose M. Donaldson , Harlan F. Chung , William J. Mosby , Eva E. Taggart , Thomas L. Paoli
IPC分类号： H01S3/23 , H01S5/00 , H01S5/022 , H01S5/026 , H01S5/40 , H01S3/02
CPC分类号： H01S5/4025 , H01S5/4043
摘要： The present invention concerns laser diode arrays having an accurately spaced offset in the laser beams emanating from their respective laser stripes, and methods of their manufacture. The first method involves the mounting of at least two laser diodes on a submount such that the axes of the laser stripes between the two respective diodes are accurately spaced. The second method concerns the placement of a position mark on each diode at a accurate distance from the axis of the laser stripe such that the mark is easily detectable from a side view. The two diodes are then mounted with the axes of their laser stripes accurately spaced from the relative positioning of the position marks. The third method concerns the manufacture of laser diodes whose laser stripe axes are accurately spaced from at least one side edge of the diodes. The array of diodes is constructed such that the laser stripe axes are accurately spaced from each other relative to the side edges of accurate distance from their respective axes.
摘要翻译：本发明涉及在从它们各自的激光条发出的激光束中具有精确间隔的偏移的激光二极管阵列及其制造方法。第一种方法涉及在底座上安装至少两个激光二极管，使得两个相应二极管之间的激光条纹的轴线被精确地间隔开。第二种方法涉及在距离激光条的轴线的准确距离处在每个二极管上放置位置标记，使得从侧视图可以容易地检测标记。然后安装两个二极管，其激光条的轴线与位置标记的相对定位精确地间隔开。第三种方法涉及激光二极管的制造，其激光条纹轴与二极管的至少一个侧边缘精确地间隔开。二极管阵列被构造成使得激光条纹轴线相对于侧边缘彼此精确地相距离其相应轴线的准确距离。

4. 发明授权

US4589115A Wavelength tuning of quantum well heterostructure lasers using an external grating 失效
标题翻译：使用外部光栅的量子阱异质结构激光器的波长调谐
公开(公告)号：US4589115A
公开(公告)日：1986-05-13
申请号：US530555
申请日：1983-09-09
申请人： Robert Burnham , Nick Holonyak, Jr. , Harlan F. Chung
发明人： Robert Burnham , Nick Holonyak, Jr. , Harlan F. Chung
IPC分类号： H01S3/1055 , H01S5/14 , H01S5/34 , H01S5/343 , H01S3/101
CPC分类号： B82Y20/00 , H01S3/1055 , H01S5/141 , H01S5/34 , H01S5/3418 , H01S5/3425 , H01S5/3432
摘要： The method of and apparatus for tuning the wavelength using an external diffraction grating is accomplished with a quantum well injection laser wherein the range of operating wavelength selection is extended beyond the expectations of wavelength selection in fundamental emission spectrum of conventional bulk-crystal heterostructure lasers to include wavelength selection at the multiple carrier recombination transition energies possible in the conduction band sub-bands and valence band sub-bands present in quantum well heterostructures of single or multiple quantum well lasers. Quantum well heterostructure lasers have a unique advantage over previous tuned semiconductor lasers, as exemplified in the previously cited prior art, in that the active region of the quantum well laser can be bandfilled to well above the bulk crystal band edge at moderate current densities indicative of excellent candidates for broad band tuning through a wide range of the quantum well sub-bands of the quantum well structure.
摘要翻译：使用外部衍射光栅调谐波长的方法和装置通过量子阱注入激光器实现，其中工作波长选择的范围被扩展到常规体晶体异质结构激光器的基本发射光谱中的波长选择的期望以包括在单载波或多个量子阱激光器的量子阱异质结构中存在的导带子带和价带子带中的多载波复合跃迁能量处的波长选择。量子阱异质结构激光器具有优于之前调谐的半导体激光器的独特优点，如先前引用的现有技术中所例示的那样，量子阱激光器的有源区域可以以适当的电流密度填充到阱晶体带边缘以上，通过量子阱结构的量子阱子带的宽范围宽带调谐的优秀候选者。

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