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    • 5. 发明授权
      US06881669B2 Process for making electronic devices having a monolayer diffusion barrier 失效
    • Process for making electronic devices having a monolayer diffusion barrier
    • 制造具有单层扩散阻挡层的电子器件的方法
    • US06881669B2
    • 2005-04-19
    • US09853925
    • 2001-05-09
    • Tak Kin Chu , Francisco Santiago , Kevin A. Boulais
    • Tak Kin Chu , Francisco Santiago , Kevin A. Boulais
    • H01L21/285 , H01L21/768 , H01L23/532 , H01L21/44 , H01L21/4763
    • H01L21/76846 , H01L21/28518 , H01L21/28562 , H01L21/28568 , H01L21/76843 , H01L21/76864 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
    • An epitaxial barrier material provides not only a unique growth medium for growing single crystal structures of elemental metal thereon, but also provides an effective diffusion barrier at extremely thin thicknesses against migration of atoms from the metallization layer into an adjacent semiconductor substrate or low dielectric insulation layer. This invention is particularly advantageous for forming single crystal, transition metal conductor lines, contacts, filled trenches, and/or via plugs, and especially conductor structures based on transition metals of copper, silver, gold, or platinum. These metals are highly attractive for interconnect strategies on account of there respective low resistivity and high reliability characteristics. Processes for making the barrier film in a semiconductor device are also covered. The capability to use copper interconnect strategies coupled with the proviso of an extremely thin barrier film makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.
    • 外延阻挡材料不仅提供用于生长其上元素金属的单晶结构的独特的生长介质，而且还提供了非常薄的厚度上有效的扩散阻挡，以防止原子从金属化层迁移到相邻的半导体衬底或低介电绝缘层 。 本发明特别有利于形成单晶，过渡金属导体线，触点，填充沟槽和/或通孔塞，特别是基于铜，银，金或铂的过渡金属的导体结构。 由于存在相应的低电阻率和高可靠性特性，这些金属对于互连策略是非常有吸引力的。 在半导体器件中制造阻挡膜的工艺也被覆盖。 使用铜互连策略的能力与非常薄的阻挡膜的条件相结合使得成分密度显着增加，并且大规模集成电路中层数的相应减少以及改进的性能成为可能。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 6. 发明授权
      US06720654B2 Electronic devices with cesium barrier film and process for making same 失效
    • Electronic devices with cesium barrier film and process for making same
    • 具有铯阻挡膜的电子器件及其制造方法
    • US06720654B2
    • 2004-04-13
    • US09137086
    • 1998-08-20
    • Michael F. Stumborg , Francisco Santiago , Tak Kin Chu , Kevin A. Boulais
    • Michael F. Stumborg , Francisco Santiago , Tak Kin Chu , Kevin A. Boulais
    • H01L2348
    • C23C14/5806 , C23C14/025 , C23C14/18 , C23C16/0281 , C23C16/14 , H01L21/2855 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L2924/0002 , H01L2924/00
    • A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness. The extremely thin barrier film makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.
    • 一种具有阻挡膜的半导体器件，其包含由一个或多个单层形成的极薄膜，每个单层由金属原子的二维阵列组成。 在一个示例性方面，阻挡膜用于防止另一种材料（例如铜导体）的原子扩散到诸如半导体材料或绝缘材料的衬底中。 在制造半导体器件的一种模式中，阻挡膜通过将诸如金属卤化物（例如BaF 2）的前体沉积到衬底材料上而形成，然后在衬底材料上退火所得到的膜以除去所有的 临时异质外延膜的成分除了附着在基材表面上留下的单层金属原子外。 即使当阻挡膜的厚度仅为一个或几个时，沉积在阻挡膜上的导体（例如铜）也被有效地防止扩散到基底材料中。 极薄的阻挡膜使组件密度显着增加，并且大规模集成电路中层数的相应减少以及改进的性能成为可能。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 7. 发明授权
      US06566247B2 Electronic devices with composite atomic barrier film and process for making same 失效
    • Electronic devices with composite atomic barrier film and process for making same
    • 具有复合原子屏障膜的电子器件及其制造方法
    • US06566247B2
    • 2003-05-20
    • US09899799
    • 2001-07-05
    • Michael F. Stumborg , Francisco Santiago , Tak Kin Chu , Kevin A. Boulais
    • Michael F. Stumborg , Francisco Santiago , Tak Kin Chu , Kevin A. Boulais
    • H01L214763
    • C23C14/5806 , C23C14/025 , C23C14/18 , C23C16/0281 , C23C16/14 , H01L21/76843 , H01L21/76846
    • A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms, in which more than one type of metal atom is provided in barrier film. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing different types of precursors, such as metal halides (e.g., BaF2 and SrF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness. The extremely thin barrier film makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.
    • 一种具有阻挡膜的半导体器件，该阻挡膜包括由一个或多个单层形成的极薄膜，每个单层由金属原子的二维阵列组成，其中在阻挡膜中提供多于一种类型的金属原子。 在一个示例性方面，阻挡膜用于防止另一种材料（例如铜导体）的原子扩散到诸如半导体材料或绝缘材料的衬底中。 在制造半导体器件的一种模式中，阻挡膜通过将不同类型的前体（例如金属卤化物（例如，BaF 2和SrF 2））沉积到衬底材料上而形成，然后在衬底材料上退火所得膜以除去 临时异质外延膜的所有成分除了附着在基底表面上留下的单层金属原子之外。 即使当阻挡膜的厚度仅为一个或几个时，沉积在阻挡膜上的导体（例如铜）也被有效地防止扩散到基底材料中。 极薄的阻挡膜使组件密度显着增加，并且大规模集成电路中层数的相应减少以及改进的性能成为可能。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 9. 发明授权
      US6077775A Process for making a semiconductor device with barrier film formation using a metal halide and products thereof 失效
    • Process for making a semiconductor device with barrier film formation using a metal halide and products thereof
    • 使用金属卤化物制造具有阻挡膜形成的半导体器件及其制造方法
    • US6077775A
    • 2000-06-20
    • US137089
    • 1998-08-20
    • Michael F. Stumborg , Francisco Santiago , Tak Kin Chu , Kevin A. Boulais
    • Michael F. Stumborg , Francisco Santiago , Tak Kin Chu , Kevin A. Boulais
    • C23C14/02 , C23C14/18 , C23C14/58 , C23C16/02 , C23C16/14 , H01L21/768 , H01L21/441 , H01L21/4763
    • C23C14/5806 , C23C14/025 , C23C14/18 , C23C16/0281 , C23C16/14 , H01L21/76843 , H01L21/76846
    • Process for making a semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a metal halide as a precursor (e.g., BaF.sub.2 or SrF.sub.2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of a temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness. The extremely thin barrier film makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.
    • 制造具有阻挡膜的半导体器件的方法，该阻挡膜包括由一个或多个由金属原子的二维阵列组成的一个或多个单层形成的极薄膜。 在一个示例性方面，阻挡膜用于防止另一种材料（例如铜导体）的原子扩散到诸如半导体材料或绝缘材料的衬底中。 在制造半导体器件的一种模式中，通过将作为前体的金属卤化物（例如，BaF 2或SrF 2）沉积到衬底材料上，然后使所得到的膜在衬底材料上退火而形成阻挡膜，以除去所有的 临时异质外延膜的成分除了附着在基材表面上留下的单层金属原子外。 即使当阻挡膜的厚度仅为一个或几个时，沉积在阻挡膜上的导体（例如铜）也被有效地防止扩散到基底材料中。 极薄的阻挡膜使组件密度显着增加，并且大规模集成电路中层数的相应减少以及改进的性能成为可能。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
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