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1. 发明授权

US06627865B1 Nonplanar integrated optical device array structure and a method for its fabrication 有权
标题翻译：非平面集成光器件阵列结构及其制造方法
公开(公告)号：US06627865B1
公开(公告)日：2003-09-30
申请号：US09859619
申请日：2001-05-15
申请人： William J. Hamilton, Jr. , Paul R. Norton , Eli E. Gordon , Ronald W. Berry
发明人： William J. Hamilton, Jr. , Paul R. Norton , Eli E. Gordon , Ronald W. Berry
IPC分类号： H01L2700
CPC分类号： H01L27/1446
摘要： An integrated optical device array structure has a plurality of interconnected solid state microelectronic optical device elements associated together on a substrate structure. The optical device elements may be optical detectors or optical emitters. Each optical device element lies on a nonplanar optical array surface. Each optical device element includes an opto-electronic device that interconverts an optical signal and an opto-electronic device electrical signal, and an electrical interface circuit that is in electrical communication with the opto-electronic device electrical signal. The optical device array structure may be fabricated by preparing a flat array of optical device elements and deforming the flat array into the required shape.
摘要翻译：集成的光学器件阵列结构具有在衬底结构上连接在一起的多个互连的固态微电子光学器件元件。光学器件元件可以是光学检测器或光发射器。每个光学器件元件位于非平面光学阵列表面上。每个光学器件元件包括互相转换光信号和光电器件电信号的光电器件，以及与光电器件电信号电通信的电接口电路。光学器件阵列结构可以通过制备光学器件元件的平坦阵列并将平坦阵列变形成所需形状来制造。

2. 发明授权

US06455931B1 Monolithic microelectronic array structure having substrate islands and its fabrication 失效
标题翻译：具有衬底岛的单片微电子阵列结构及其制造
公开(公告)号：US06455931B1
公开(公告)日：2002-09-24
申请号：US09859618
申请日：2001-05-15
申请人： William J. Hamilton, Jr. , Michael Ray , Eli E. Gordon , Christopher L. Fletcher , Ronald W. Berry
发明人： William J. Hamilton, Jr. , Michael Ray , Eli E. Gordon , Christopher L. Fletcher , Ronald W. Berry
IPC分类号： H01L2334
CPC分类号： H01L27/14683 , H01L27/14601 , H01L27/14643 , H01L2924/0002 , H01L2924/00
摘要： A monolithic microelectronic array structure includes a microelectronic integrated circuit array having a first plurality of microelectronic integrated circuit elements each deposited on a front side of a substrate. The substrates are physically discontinuous so that each substrate comprises a substrate island which is physically separated from the other substrate islands. The monolithic microelectronic array structure optionally includes a first plurality of input/output elements with a respective input/output element associated with and directly connected to each of the microelectronic integrated circuit elements, and a second plurality of electrically conductive interconnects extending between the microelectronic integrated circuit elements of adjacent substrate islands. The monolithic microelectronic array structure may be planar, or it may be curved.
摘要翻译：单片微电子阵列结构包括微电子集成电路阵列，其具有分别沉积在衬底的前侧上的第一多个微电子集成电路元件。衬底物理不连续，使得每个衬底包括与其它衬底岛物理分离的衬底岛。单片微电子阵列结构可选地包括具有与每个微电子集成电路元件相关联并直接连接到每个微电子集成电路元件的相应输入/输出元件的第一多个输入/输出元件，以及在微电子集成电路之间延伸的第二多个导电互连相邻衬底岛的元素。单片微电子阵列结构可以是平面的，或者它可以是弯曲的。

3. 发明授权

US07132655B2 Passive millimeter wave sensor using high temperature superconducting leads 有权
标题翻译：无源毫米波传感器采用高温超导导线
公开(公告)号：US07132655B2
公开(公告)日：2006-11-07
申请号：US10727187
申请日：2003-12-02
申请人： Michael D. Jack , Eli E. Gordon
发明人： Michael D. Jack , Eli E. Gordon
IPC分类号： G01J5/00
CPC分类号： H01Q21/26 , G01J5/08 , G01J5/0837 , G01J5/20 , H01Q1/002 , H01Q1/364
摘要： A radiation sensor (20) has a substrate (34); an antenna (24) coupled to the substrate (34), a thermal detector unit TDU (22) spaced from the antenna (24) and the substrate (34); and a multi-layered conductive lead (30). The conductive lead (30) physically contacts the antenna (24) and the TDU (22). The conductive lead (30) defines a support layer (44) adjacent to the substrate (34) for structurally supporting the TDU (22) over a cavity defined by the substrate (34), a buffer layer (46) disposed on the support layer (44), and a superconductive layer (48) disposed on the buffer layer (46). The buffer layer has a crystalline structure to facilitate bonding with other layers. A method for making the sensor (20) is disclosed wherein the superconductive layer (48) and the buffer layer (46) are deposited using laser deposit, the buffer layer (46) with ion beam assist for alignment.
摘要翻译：辐射传感器（20）具有基板（34）; 耦合到所述衬底（34）的天线（24），与所述天线（24）和所述衬底（34）间隔开的热检测器单元TDU（22）; 和多层导电引线（30）。导电引线（30）物理地接触天线（24）和TDU（22）。导电引线（30）限定与衬底（34）相邻的支撑层（44），用于在由衬底（34）限定的空腔上结构地支撑TDU（22）;缓冲层（46），设置在支撑层（44）和设置在缓冲层（46）上的超导层（48）。缓冲层具有便于与其它层结合的晶体结构。公开了一种用于制造传感器（20）的方法，其中使用激光沉积沉积超导层（48）和缓冲层（46），缓冲层（46）具有用于对准的离子束辅助。

4. 发明授权

US06828545B1 Hybrid microelectronic array structure having electrically isolated supported islands, and its fabrication 有权
标题翻译：具有电隔离的支撑岛的混合微电子阵列结构及其制造
公开(公告)号：US06828545B1
公开(公告)日：2004-12-07
申请号：US09859575
申请日：2001-05-15
申请人： William J. Hamilton, Jr. , Eli E. Gordon , Ronald W. Berry
发明人： William J. Hamilton, Jr. , Eli E. Gordon , Ronald W. Berry
IPC分类号： H01L3100
CPC分类号： H01L27/1465 , H01L2924/351
摘要： A hybrid microelectronic array structure is fabricated from a readout integrated circuit array of microelectronic integrated circuits and a supported array of supported islands. The supported islands include one or more supported elements, with a respective supported element for each of the readout integrated circuits. The supported array is made by depositing the first semiconductor region onto a supported substrate and depositing the second semiconductor region onto the first semiconductor region, and defining supported islands as electrically isolated segments. On each supported element, a first interconnect is formed to the first semiconductor region and a second interconnect is formed to the second semiconductor region. The supported array is joined to the readout integrated circuit array by an interconnect structure, preferably a bump interconnect structure, to form the hybrid microelectronic array structure, with each readout integrated electrically interconnected to the respective one of the supported elements.
摘要翻译：混合微电子阵列结构由微电子集成电路的读出集成电路阵列和支持的岛的支持阵列制成。支撑的岛包括一个或多个受支撑的元件，以及用于每个读出集成电路的相应的支撑元件。支撑的阵列通过将第一半导体区域沉积到受支撑的衬底上并将第二半导体区域沉积到第一半导体区域上并且将支撑的岛作为电隔离段来制造。在每个支撑元件上，第一互连形成于第一半导体区域，第二互连形成于第二半导体区域。支撑的阵列通过互连结构（优选地是凸块互连结构）连接到读出集成电路阵列，以形成混合微电子阵列结构，其中每个读出器电互连到相应的一个支持元件。

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