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1. 外观设计

USD671016S1 Device for showing elapsed time 有权
标题翻译：显示经过时间的设备
公开(公告)号：USD671016S1
公开(公告)日：2012-11-20
申请号：US29408031
申请日：2011-12-06
申请人： Janice L. Rogers , David M. Rogers , Tricia L. Wright
设计人： Janice L. Rogers , David M. Rogers , Tricia L. Wright

2. 发明授权

US06770938B1 Diode fabrication for ESD/EOS protection 有权
标题翻译：用于ESD / EOS保护的二极管制造
公开(公告)号：US06770938B1
公开(公告)日：2004-08-03
申请号：US10050394
申请日：2002-01-16
申请人： Michael Fliesler , Mark Ramsbey , Mark Randolph , Ian Morgan , Timothy Thurgate , Paohua Kuo , David M. Rogers
发明人： Michael Fliesler , Mark Ramsbey , Mark Randolph , Ian Morgan , Timothy Thurgate , Paohua Kuo , David M. Rogers
IPC分类号： H01L2362
CPC分类号： H01L27/0255
摘要： An ESD protection device is provided for an integrated circuit. The ESD protection device includes a power supply clamp device formed from a diode and coupled between a first power supply VCC and a second power supply VSS. An input protection device is also provided which is formed from a diode coupled between an input pad and the first power supply and a second diode coupled between the input pad and a second power supply. The diodes have an adjusted reverse breakdown voltage that is higher than the voltage supply VCC used to power the peripheral circuitry that drives circuitry within a core of the integrated circuit. The adjusted reverse breakdown voltage is also lower than the breakdown voltage of gate oxide layers used within the peripheral circuitry.
摘要翻译：为集成电路提供ESD保护装置。 ESD保护装置包括由二极管形成并耦合在第一电源VCC和第二电源VSS之间的电源钳位装置。还提供一种输入保护装置，其由耦合在输入焊盘和第一电源之间的二极管和耦合在输入焊盘和第二电源之间的第二二极管形成。二极管具有调整的反向击穿电压，其高于用于为驱动集成电路的核心内的电路的外围电路供电的电压源VCC。调整的反向击穿电压也低于在外围电路中使用的栅极氧化物层的击穿电压。

3. 发明授权

US06541816B2 Planar structure for non-volatile memory devices 失效
公开(公告)号：US06541816B2
公开(公告)日：2003-04-01
申请号：US09893026
申请日：2001-06-27
申请人： Mark T. Ramsbey , Jean Y. Yang , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi S. Sunkavalli , Janet S. Wang , Narbeh Derhacobian
发明人： Mark T. Ramsbey , Jean Y. Yang , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi S. Sunkavalli , Janet S. Wang , Narbeh Derhacobian
IPC分类号： H01L29792
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/115 , H01L27/11573 , Y10S438/954 , Y10S438/981
摘要： One aspect of the present invention relates to a non-volatile semiconductor memory device, containing a substrate, the substrate having a core region and a periphery region; a charge trapping dielectric over the core region of the substrate; a gate dielectric in the periphery region of the substrate; buried bitlines under the charge trapping dielectric in the core region; and wordlines over the charge trapping dielectric in the core region, wherein the core region is substantially planar.

4. 发明授权

US06468865B1 Method of simultaneous formation of bitline isolation and periphery oxide 有权
标题翻译：同时形成位线隔离和周边氧化物的方法
公开(公告)号：US06468865B1
公开(公告)日：2002-10-22
申请号：US09723653
申请日：2000-11-28
申请人： Jean Y. Yang , Mark T. Ramsbey , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi Sunkavalli , Janet Wang , Narbeh Derhacobian , Yider Wu
发明人： Jean Y. Yang , Mark T. Ramsbey , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi Sunkavalli , Janet Wang , Narbeh Derhacobian , Yider Wu
IPC分类号： H01L21336
CPC分类号： H01L27/11568 , H01L27/115
摘要： One aspect of the present invention relates to a method of forming a non-volatile semiconductor memory device, involving the sequential or non-sequential steps of forming a charge trapping dielectric over a substrate, the substrate having a core region and a periphery region; removing at least a portion of the charge trapping dielectric in the periphery region; forming a gate dielectric in the periphery region; forming buried bitlines in the core region; removing at least a portion of the charge trapping dielectric positioned over the buried bitlines in the core region; forming a bitline isolation over the buried bitlines in the core region; and forming gates in the core region and the periphery region. Another aspect of the present invention relates to increasing the thickness of the gate dielectric in at least a portion of the periphery region simultaneously while forming the bitline isolation.
摘要翻译：本发明的一个方面涉及一种形成非挥发性半导体存储器件的方法，涉及在衬底上形成电荷俘获电介质的顺序或非顺序步骤，所述衬底具有芯区域和外围区域; 去除外围区域中的电荷捕获电介质的至少一部分; 在周边区域形成栅电介质; 在核心区域形成掩埋位线; 去除位于芯区域中的掩埋位线之上的电荷捕获电介质的至少一部分; 在核心区域的掩埋位线上形成位线隔离; 并且在芯区域和周边区域中形成栅极。本发明的另一方面涉及在形成位线隔离的同时在周边区域的至少一部分中增加栅极电介质的厚度。

5. 外观设计

USD335949S Shoe covering 失效
公开(公告)号：USD335949S
公开(公告)日：1993-06-01
申请号：US565745
申请日：1990-08-13
申请人： David M. Rogers
设计人： David M. Rogers

6. 发明授权

US06465306B1 Simultaneous formation of charge storage and bitline to wordline isolation 有权
标题翻译：同时形成电荷存储和位线到字线隔离
公开(公告)号：US06465306B1
公开(公告)日：2002-10-15
申请号：US09723635
申请日：2000-11-28
申请人： Mark T. Ramsbey , Jean Y. Yang , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi Sunkavalli , Janet Wang , Narbeh Derhacobian , Yider Wu
发明人： Mark T. Ramsbey , Jean Y. Yang , Hidehiko Shiraiwa , Michael A. Van Buskirk , David M. Rogers , Ravi Sunkavalli , Janet Wang , Narbeh Derhacobian , Yider Wu
IPC分类号： H01L21336
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/115 , H01L27/11573 , Y10S438/954 , Y10S438/981
摘要： One aspect of the present invention relates to a method of forming a non-volatile semiconductor memory device, involving the sequential or non-sequential steps of forming a charge trapping dielectric over a substrate, the substrate having a core region and a periphery region; removing at least a portion of the charge trapping dielectric in the periphery region; forming a gate dielectric in the periphery region; forming buried bitlines in the core region; and forming gates in the core region and the periphery region.
摘要翻译：本发明的一个方面涉及一种形成非挥发性半导体存储器件的方法，涉及在衬底上形成电荷俘获电介质的顺序或非顺序步骤，所述衬底具有芯区域和外围区域; 去除外围区域中的电荷捕获电介质的至少一部分; 在周边区域形成栅电介质; 在核心区域形成掩埋位线; 并且在芯区域和周边区域中形成栅极。

7. 发明授权

US5596880A Chilled beverage display container 失效
标题翻译：冷藏饮料展示柜
公开(公告)号：US5596880A
公开(公告)日：1997-01-28
申请号：US500435
申请日：1995-07-10
申请人： Brian H. Welker , Mark T. Beeler , David M. Rogers
发明人： Brian H. Welker , Mark T. Beeler , David M. Rogers
IPC分类号： F25D3/06 , F25D31/00 , F25D3/08 , G09F15/00
CPC分类号： F25D3/06 , F25D2303/081 , F25D2331/804 , F25D2331/805 , F25D2331/809 , F25D2400/38 , F25D2500/02 , F25D31/007
摘要： A beverage container adapted to hold ice and beverages separate from water formed from melted ice includes a receptacle having an interior cavity for holding ice and beverages; a float having a density less than water adapted to support the ice and beverages and move upwardly within the cavity as the ice melts; a cover mounted on the receptacle by a hinge having three slots including a recess and an opening at a depth in the recess, and a tubesign base having three tabs having distal ends, lobes on the distal ends and lengths from bases of the tabs to their lobes corresponding to the depth, so as to enable removable attachment of the tubesign base to the hinge by insertion of the tabs in the slots, with the lobes locking the tabs into the slots when inserted therein.
摘要翻译：适于将冰和饮料与熔融冰形成的水分离的饮料容器包括具有用于容纳冰和饮料的内部腔的容器; 具有小于水的浮子，其适于支撑冰和饮料并且随着冰融化而在空腔内向上移动; 通过铰链安装在容器上的盖子，该铰链具有三个槽，包括凹槽和在凹槽中的深度处的开口;以及管状基座，其具有三个突出部，其具有远端，远端的凸角和从突出部的基部相应于深度的裂片，以便能够通过将突出部插入狭槽中来将管状基座可拆卸地附接到铰链，当突出部插入其中时，突片将突片锁定到槽中。

8. 发明授权

US4208517A Caphalosporin compounds having at position-7 an .alpha.-etherified hydroxyiminoarylacetamido group 失效
标题翻译：在位置-7处具有α-乙酰化羟基亚氨基芳基乙酰胺基的咖啡糊精化合物
公开(公告)号：US4208517A
公开(公告)日：1980-06-17
申请号：US855080
申请日：1977-11-28
申请人： Michael W. Foxton , Gordon I. Gregory , David M. Rogers
发明人： Michael W. Foxton , Gordon I. Gregory , David M. Rogers
IPC分类号： C07D307/54 , C07D501/32 , C07D501/34 , A61K31/545
CPC分类号： C07D307/54
摘要： Antibiotic compounds of the general formula ##STR1## [wherein R is a phenyl, thienyl or furyl group; R.sup.a and R.sup.b, which may be the same or different, are each selected from hydrogen, C.sub.1-4 alkyl, C.sub.2-4 alkenyl, C.sub.3-7 cycloalkyl, phenyl, naphthyl, thienyl, furyl, carboxy, C.sub.2-5 alkoxycarbonyl and cyano, or R.sup.a and R.sup.b together wth the carbon atom to which they are attached form a C.sub.3-7 cycloalkylidene or cycloalkenylidene group; R.sup.c and R.sup.d, which may be the same or different, each represents a hydrogen atom or a substituting group e.g. an alkyl group or substituted alkyl group; or R.sup.c and R.sup.d together with the nitrogen atom to which they are attached form a saturated or unsaturated heterocyclic ring which contains 5-7 ring members and which may contain additional hetero atoms, and may be substituted by lower alkyl; R.sup.e represents hydrogen or C.sub.1-4 alkyl; m and n are each 0 or 1 such that the sum of m and n is 0 or 1 and Y is selected from various oxygen and sulphur nucleophiles] and non-toxic derivatives thereof.
摘要翻译：通式（I）的抗生素化合物[其中R是苯基，噻吩基或呋喃基; R a和R b可以相同或不同，各自选自氢，C 1-4烷基，C 2-4烯基，C 3-7环烷基，苯基，萘基，噻吩基，呋喃基，羧基，C 2-5烷氧基羰基和氰基，或者R a和R b一起与它们所连接的碳原子一起形成C 3-7亚环烷基或亚环烯基; R c和R d可以相同或不同，表示氢原子或取代基团。烷基或取代的烷基; 或Rc和Rd与它们所连接的氮原子一起形成饱和或不饱和的杂环，其含有5-7个环成员并且可以含有另外的杂原子，并且可以被低级烷基取代; Re表示氢或C 1-4烷基; m和n各自为0或1，使得m和n的和为0或1，Y选自各种氧和硫亲核试剂]及其无毒的衍生物。

9. 发明授权

US08445966B2 Method and apparatus for protection against process-induced charging 有权
标题翻译：用于防止过程引起的充电的方法和装置
公开(公告)号：US08445966B2
公开(公告)日：2013-05-21
申请号：US11614053
申请日：2006-12-20
申请人： David M. Rogers , Mimi X. Qian , Kwadwo A. Appiah , Mark Randolph , Michael A. VanBuskirk , Tazrien Kamal , Hiroyuki Kinoshita , Yi He , Wei Zheng
发明人： David M. Rogers , Mimi X. Qian , Kwadwo A. Appiah , Mark Randolph , Michael A. VanBuskirk , Tazrien Kamal , Hiroyuki Kinoshita , Yi He , Wei Zheng
IPC分类号： H01L23/62
CPC分类号： H01L21/768 , G11C8/08 , G11C8/14 , H01L27/0248 , H01L29/66477 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device (400) for improved charge dissipation protection includes a substrate (426), a layer of semiconductive or conductive material (406), one or more thin film devices (408) and a charge passage device (414). The thin film devices (408) are connected to the semiconductive or conductive layer (406) and the charge passage device (414) is coupled to the thin film devices (408) and to the substrate (426) and provides a connection from the thin film devices (408) to the substrate (426) to dissipate charge from the semiconductive/conductive layer (406) to the substrate (426).
摘要翻译：用于改善电荷耗散保护的半导体器件（400）包括衬底（426），半导体或导电材料层（406），一个或多个薄膜器件（408）和电荷通道器件（414）。薄膜器件（408）连接到半导体或导电层（406），并且电荷通道器件（414）耦合到薄膜器件（408）和衬底（426），并提供来自薄的薄膜器件（408）到衬底（426）以将电荷从半导体/导电层（406）耗散到衬底（426）。

10. 发明授权

US5433085A Chilled beverage display container 失效
标题翻译：冷藏饮料展示柜
公开(公告)号：US5433085A
公开(公告)日：1995-07-18
申请号：US195560
申请日：1994-02-14
申请人： David M. Rogers
发明人： David M. Rogers
IPC分类号： F25D3/06 , F25D31/00 , F25D3/08
CPC分类号： F25D3/06 , F25D2303/081 , F25D2331/804 , F25D2331/805 , F25D2331/809 , F25D2400/38 , F25D2500/02 , F25D31/007
摘要： A container for holding ice and beverages includes a receptacle having an interior cavity with substantially vertical side walls, and a float positioned within the cavity to support beverages and ice, and move upwardly within the cavity as ice melts. Ribs may be added to the interior wall of the cavity to prevent tipping of the float.
摘要翻译：用于容纳冰和饮料的容器包括具有基本上垂直侧壁的内腔的容器和位于空腔内的支撑饮料和冰的浮子，并且随着冰融化而在空腔内向上移动。肋可以被添加到空腔的内壁以防止浮子的倾翻。

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