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1. 发明申请

US20080035197A1 PHOTOACTIVE MATERIALS CONTAINING BULK AND QUANTUM-CONFINED SEMICONDUCTOR STRUCTURES AND OPTOELECTRONIC DEVICES MADE THEREFROM 审中-公开
标题翻译：包含大容量和量子半导体结构的光学材料和其中的光电器件
公开(公告)号：US20080035197A1
公开(公告)日：2008-02-14
申请号：US11775019
申请日：2007-07-09
申请人： Dmytro Poplavskyy , Sanjai Sinha , David Jurbergs , Homer Antoniadis
发明人： Dmytro Poplavskyy , Sanjai Sinha , David Jurbergs , Homer Antoniadis
IPC分类号： H01L31/00 , H01C13/00
CPC分类号： H01L31/0352 , H01L31/028 , Y02E10/547
摘要： The present invention provides photoactive materials that include quantum-confined semiconductor nanostructures in combination with non-quantum confined and bulk semiconductor structures to enhance or create a type II band offset structure. The photoactive materials are well-suited for use as the photoactive layer in photoactive devices, including photovoltaic devices, photoconductors and photodetectors.
摘要翻译：本发明提供光活性材料，其包括与非量子限制和体半导体结构组合的量子限制半导体纳米结构，以增强或创建II型带偏移结构。光活性材料非常适合用作光活性器件中的光活性层，包括光电器件，光电导体和光电探测器。

2. 发明申请

US20110079768A1 PHOTOACTIVE MATERIALS CONTAINING BULK AND QUANTUM-CONFINED SEMICONDUCTOR STRUCTURES AND OPTOELECTRONIC DEVICES MADE THEREFROM 审中-公开
标题翻译：包含大容量和量子半导体结构的光学材料和其中的光电器件
公开(公告)号：US20110079768A1
公开(公告)日：2011-04-07
申请号：US12965015
申请日：2010-12-10
申请人： Dmytro Poplavskyy , Sanjai Sinha , David Jurbergs , Homer Antoniadis
发明人： Dmytro Poplavskyy , Sanjai Sinha , David Jurbergs , Homer Antoniadis
IPC分类号： H01L29/66 , C09K11/08
CPC分类号： H01L31/0352 , H01L31/028 , Y02E10/547
摘要： The present invention provides photoactive materials that include quantum-confined semiconductor nanostructures in combination with non-quantum confined and bulk semiconductor structures to enhance or create a type II band offset structure. The photoactive materials are well-suited for use as the photoactive layer in photoactive devices, including photovoltaic devices, photoconductors and photodetectors.
摘要翻译：本发明提供光活性材料，其包括与非量子限制和体半导体结构组合的量子限制半导体纳米结构，以增强或创建II型带偏移结构。光活性材料非常适合用作光活性器件中的光活性层，包括光电器件，光电导体和光电探测器。

3. 发明申请

US20100018578A1 PHOTOACTIVE MATERIALS CONTAINING GROUP IV NANOSTRUCTURES AND OPTOELECTRONIC DEVICES MADE THEREFROM 审中-公开
标题翻译：含IV族纳米结构的光电材料及其制造的光电器件
公开(公告)号：US20100018578A1
公开(公告)日：2010-01-28
申请号：US11756829
申请日：2007-06-01
申请人： Pingrong Yu , Dmytro Poplavskyy , Sanjai Sinha
发明人： Pingrong Yu , Dmytro Poplavskyy , Sanjai Sinha
IPC分类号： H01L31/04 , H01B1/24
CPC分类号： H01L51/426 , B82Y10/00 , B82Y30/00 , H01L51/0012 , H01L51/0037 , H01L51/0047 , H01L51/0048 , H01L51/0053 , H01L51/0081 , H01L51/4266 , Y02E10/549
摘要： The present invention provides photoactive materials that include inorganic nanostructures comprising a Group IV semiconductor in combination with electron-transporting, conjugated small molecules, carbon nanostructures, or both. The carbon nanostructures or conjugated small molecules may be selected such that the inorganic nanostructures and the carbon nanostructures (and/or the small molecules) exhibit a type II band offset. The photovoltaic materials are well-suited for use as the active layer in photoactive devices, including photovoltaic devices, photoconductors, and photodetectors.
摘要翻译：本发明提供光活性材料，其包括与电子传输，共轭小分子，碳纳米结构或两者结合的包含IV族半导体的无机纳米结构。可以选择碳纳米结构或共轭小分子，使得无机纳米结构和碳纳米结构（和/或小分子）表现出II型带偏移。光伏材料非常适合用作光电器件中的有源层，包括光电器件，光电导体和光电检测器。

4. 发明授权

US07943846B2 Group IV nanoparticles in an oxide matrix and devices made therefrom 有权
标题翻译：氧化物基体中的IV族纳米颗粒和由其制成的器件
公开(公告)号：US07943846B2
公开(公告)日：2011-05-17
申请号：US11738221
申请日：2007-04-20
申请人： Sanjai Sinha , Elena Rogojina
发明人： Sanjai Sinha , Elena Rogojina
IPC分类号： H01L31/00 , B32B5/16
CPC分类号： H01L29/16 , B82Y10/00 , C09K11/02 , C09K11/59 , H01L29/127 , H01L31/028 , H01L31/0352 , H01L31/1804 , H01L31/1864 , H01L33/18 , Y02E10/547 , Y02P70/521 , Y10T428/25 , Y10T428/2982
摘要： Photoactive materials made from Group IV semiconductor nanoparticles dispersed in an inorganic oxide matrix and methods for making the photoactive materials are provided. In some instances, the nanoparticles are functionalized with organosilanes to provide nanoparticle-organosilane compounds. The photoactive materials may be formed by subjecting the nanoparticles or nanoparticle compounds to a sol-gel process. The photoactive materials are well-suited for use in devices which convert electromagnetic radiation into electrical energy, including photovoltaic devices, photoconductors, and photodetectors.
摘要翻译：提供了分散在无机氧化物基质中的IV族半导体纳米颗粒制成的光活性材料和制备光活性材料的方法。在一些情况下，纳米颗粒用有机硅烷官能化以提供纳米颗粒 - 有机硅烷化合物。光活性材料可以通过使纳米颗粒或纳米颗粒化合物进行溶胶 - 凝胶法来形成。光敏材料非常适用于将电磁辐射转换成电能的装置，包括光电器件，光电导体和光电检测器。

5. 发明申请

US20100178435A1 Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells 审中-公开
标题翻译：制造多晶硅和硅锗太阳能电池的方法和系统
公开(公告)号：US20100178435A1
公开(公告)日：2010-07-15
申请号：US12319748
申请日：2009-01-13
申请人： John Lawrence Ervin , Sanjai Sinha
发明人： John Lawrence Ervin , Sanjai Sinha
IPC分类号： H05H1/24 , C23C16/54
CPC分类号： C23C4/04 , C23C4/18 , C23C16/24 , C23C16/513 , C23C16/56 , H05H1/30 , H05H1/42
摘要： The present invention relates to a novel, unconventional methods and systems for the fabrication of silicon on silicon-germanium photovoltaic cell applications. In some embodiments high purity gaseous and/or liquid intermediate compounds of silicon (or silicon germanium) are converted directly to polycrystalline films by a thermal plasma chemical vapor deposition process or by a thermal plasma spraying technique. The intermediate compounds of silicon (or silicon germanium) are injected into the thermal plasma source where temperatures range from 2,000 K to 20,000 K. The compounds dissociate and silicon (or silicon germanium) is deposited onto substrates. Polycrystalline films having densities approaching the bulk value are obtained on cooling. PN junction photovoltaic cells can be directly prepared by spraying, or doped films after heat treatment are subsequently transformed to viable photovoltaic cells having high efficiency, low cost at a high throughput. In some embodiments a roll-to-roll or a cluster-tool type automated, continuous system is provided.
摘要翻译：本发明涉及用于在硅锗光伏电池应用中制造硅的新型非常规方法和系统。在一些实施方案中，硅（或硅锗）的高纯度气态和/或液体中间体化合物通过热等离子体化学气相沉积工艺或通过热等离子喷涂技术直接转化为多晶膜。将硅（或硅锗）的中间体化合物注入到温度范围为2,000K至20,000K的热等离子体源中。化合物离解并将硅（或硅锗）沉积到基底上。在冷却时获得具有接近体积值的密度的多晶膜。 PN结光伏电池可以通过喷涂直接制备，或者热处理后的掺杂膜随后转化成具有高效率，低成本的高生产率的可行的光伏电池。在一些实施例中，提供了卷对卷或群集工具型自动连续系统。

6. 发明申请

US20080023070A1 Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells 审中-公开
标题翻译：制造多晶硅和硅锗太阳能电池的方法和系统
公开(公告)号：US20080023070A1
公开(公告)日：2008-01-31
申请号：US11881501
申请日：2007-07-26
申请人： Sanjai Sinha
发明人： Sanjai Sinha
IPC分类号： H01L31/18 , H01L31/00
CPC分类号： H01L31/1812 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： The present invention relates to a novel, unconventional methods and systems for the fabrication of silicon or silicon-germanium photovoltaic cell applications. In some embodiments high purity gaseous and/or liquid intermediate compounds of silicon (or silicon germanium) are converted directly to polycrystalline films by a thermal plasma chemical vapor deposition process or by a thermal plasma spraying technique. The intermediate compounds of silicon (or silicon germanium) are injected into the thermal plasma source where temperatures range from 2000 K to about 20,000 K. The compounds dissociate and silicon (or silicon germanium) is deposited onto substrates. Polycrystalline films having densities approaching the bulk value are obtained on cooling. PN junction photovoltaic cells can be directly prepared by spraying, or doped films after heat treatment are subsequently transformed to viable photovoltaic cells having high efficiency, low cost at a high throughput. In some embodiments a roll-to-roll or a cluster-tool type automated, continuous system is provided.
摘要翻译：本发明涉及用于制造硅或硅锗光伏电池应用的新型非常规方法和系统。在一些实施方案中，硅（或硅锗）的高纯度气态和/或液体中间体化合物通过热等离子体化学气相沉积工艺或通过热等离子喷涂技术直接转化为多晶膜。将硅（或硅锗）的中间体化合物注入到温度范围为2000K至约20,000K的热等离子体源中。化合物离解并将硅（或硅锗）沉积到基底上。在冷却时获得具有接近体积值的密度的多晶膜。 PN结光伏电池可以通过喷涂直接制备，或者热处理后的掺杂膜随后转化成具有高效率，低成本的高生产率的可行的光伏电池。在一些实施例中，提供了卷对卷或群集工具型自动连续系统。

7. 发明申请

US20080017242A1 GROUP IV NANOPARTICLES IN AN OXIDE MATRIX AND DEVICES MADE THEREFROM 有权
标题翻译：氧化物基质中的第IV族纳米颗粒及其制备的器件
公开(公告)号：US20080017242A1
公开(公告)日：2008-01-24
申请号：US11738221
申请日：2007-04-20
申请人： Sanjai Sinha , Elena Rogojina
发明人： Sanjai Sinha , Elena Rogojina
IPC分类号： H01L31/00 , B32B5/16
CPC分类号： H01L29/16 , B82Y10/00 , C09K11/02 , C09K11/59 , H01L29/127 , H01L31/028 , H01L31/0352 , H01L31/1804 , H01L31/1864 , H01L33/18 , Y02E10/547 , Y02P70/521 , Y10T428/25 , Y10T428/2982
摘要： Photoactive materials made from Group IV semiconductor nanoparticles dispersed in an inorganic oxide matrix and methods for making the photoactive materials are provided. In some instances, the nanoparticles are functionalized with organosilanes to provide nanoparticle-organosilane compounds. The photoactive materials may be formed by subjecting the nanoparticles or nanoparticle compounds to a sol-gel process. The photoactive materials are well-suited for use in devices which convert electromagnetic radiation into electrical energy, including photovoltaic devices, photoconductors, and photodetectors.
摘要翻译：提供了分散在无机氧化物基质中的IV族半导体纳米颗粒制成的光活性材料和制备光活性材料的方法。在一些情况下，纳米颗粒用有机硅烷官能化以提供纳米颗粒 - 有机硅烷化合物。光活性材料可以通过使纳米颗粒或纳米颗粒化合物进行溶胶 - 凝胶法来形成。光敏材料非常适用于将电磁辐射转换成电能的装置，包括光电器件，光电导体和光电检测器。

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