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1. 发明授权

US06762479B2 Microwave array transistor for low-noise and high-power applications 失效
标题翻译：微波阵列晶体管用于低噪声和高功率应用
公开(公告)号：US06762479B2
公开(公告)日：2004-07-13
申请号：US09187243
申请日：1998-11-06
申请人： Robert A. Groves , Dale K. Jadus , Dominique L. Nguyen-Ngoc , Keith M. Walter
发明人： Robert A. Groves , Dale K. Jadus , Dominique L. Nguyen-Ngoc , Keith M. Walter
IPC分类号： H01L27082
CPC分类号： H01L29/73 , H01L27/0823 , H01L29/0692
摘要： A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the array. At least one base contact overlies the at least one base region and is associated with each transistor. A plurality of the base contacts are common to at least two transistors in the array. At least one collector reach through is associated with each transistor. A collector reach through contact overlies each collector reach through. A buried layer subcollector region of electrically conducting material electrically connects the collector reach through region to the collector pedestal region of each transistor.
摘要翻译：一种包括多个晶体管的晶体管阵列。每个晶体管包括发射极。发射极区域接触覆盖每个发射极区域。至少一个基极区域位于每个发射极区域的下面，并且对阵列中的多个晶体管是共同的。至少一个基极接触覆盖至少一个基极区域并与每个晶体管相关联。多个基极触点对于阵列中的至少两个晶体管是共同的。至少一个集电极通过与每个晶体管相关联。通过接触覆盖的收集器覆盖每个收集器到达。导电材料的埋层子集电极区域将集电极到达区域电连接到每个晶体管的集电极基座区域。

2. 发明授权

US06549096B2 Switched inductor/varactor tuning circuit having a variable integrated inductor 有权
公开(公告)号：US06549096B2
公开(公告)日：2003-04-15
申请号：US09811944
申请日：2001-03-19
申请人： Robert A. Groves , Dale K. Jadus
发明人： Robert A. Groves , Dale K. Jadus
IPC分类号： H03H701
CPC分类号： H03H5/006
摘要： The magnetic field of an inductor is decreased by the presence of one or more single loop windings positioned in proximity to the inductor. The single loop windings have open circuits that are selectively closed to magnetically couple the single loop windings to the inductor. A switched inductor/varactor tuning circuit is formed by connecting a varactor to the inductor.

3. 发明授权

US06303975B1 Low noise, high frequency solid state diode 有权
标题翻译：低噪声，高频固态二极管
公开(公告)号：US06303975B1
公开(公告)日：2001-10-16
申请号：US09436166
申请日：1999-11-09
申请人： Robert A. Groves , Dominique Nguyen-Ngoc , Dale K. Jadus , Keith M. Walter
发明人： Robert A. Groves , Dominique Nguyen-Ngoc , Dale K. Jadus , Keith M. Walter
IPC分类号： H01L2710
CPC分类号： H01L27/1021 , H01L29/861 , Y10S257/91
摘要： A low noise, high frequency solid state diode is provided from a plurality of unit diode cells which are interconnected in parallel. Each of the unit diode cells forms an element of an array having rows and columns of unit diode cells. The diode cells include a base region of polysilicon, forming an anode, and an active cathode region which forms a diode junction with the anode. A plurality of overlapping subcollector regions interconnect the cathode regions, to provide a single, continuous collector for the diode arrays. The base region has a minimum perimeter to area ratio which reduces the resistance of each active diode region. A plurality of cathode contacts are connected to the subcollector through a respective reach region of highly doped semiconductor material. One or more metalization layers connect the cathode regions together, and the anodes of the base regions together. By controlling the size and shape of the base region of polysilicon, the series resistance of the resulting diode is minimized.
摘要翻译：从并联的多个单位二极管单元提供低噪声，高频固态二极管。每个单位二极管单元形成具有单位二极管单元的行和列的阵列的元件。二极管单元包括形成阳极的多晶硅的基极区域和与阳极形成二极管结的活性阴极区域。多个重叠子集电极区域互连阴极区域，为二极管阵列提供单一的连续集电极。基极区域具有最小的周边面积比，其减小了每个有源二极管区域的电阻。多个阴极触点通过高掺杂半导体材料的相应到达区域连接到子集电极。一个或多个金属化层将阴极区域连接在一起，并将基极区域的阳极连接在一起。通过控制多晶硅的基极区域的尺寸和形状，所得二极管的串联电阻最小化。

4. 发明授权

US4331887A Current switch driving circuit arrangements 失效
标题翻译：电流开关驱动电路布置
公开(公告)号：US4331887A
公开(公告)日：1982-05-25
申请号：US162294
申请日：1980-06-23
申请人： Dale K. Jadus , Richard O. Seeger
发明人： Dale K. Jadus , Richard O. Seeger
IPC分类号： H02P25/04 , H02M7/5387 , H02P27/06 , H03K17/64 , H03K17/66 , H03K3/26
CPC分类号： H02M7/5387
摘要： This current switch driving circuitry, particularly for, but not necessarily limited to, inductive device current switching, comprises a pair of output transistors constituting a driving transistor for turning ON a subsequent switching transistor and a current sinking transistor for turning OFF that switching transistor with circuit provisions for maintaining the two transistors in a low power consuming standby state. A pair of receiver circuits are arranged for applying ON and OFF logical signals individually to the two transistors by way of intermediate circuitry having current multiplying circuitry for deriving the necessary driving power with a minimum of power consumed.
摘要翻译：该电流开关驱动电路，特别是但不一定限于电感器件电流切换，包括一对输出晶体管，其构成用于导通后续开关晶体管的驱动晶体管和用于使该开关晶体管断开的电流吸收晶体管用于将两个晶体管保持在低功耗待机状态。一对接收器电路被布置用于通过具有电流倍增电路的中间电路将逻辑信号单独地施加到两个晶体管，用于以最小的功率消耗来推导必要的驱动功率。

5. 发明授权

US06423603B1 Method of forming a microwave array transistor for low-noise and high-power applications 有权
公开(公告)号：US06423603B1
公开(公告)日：2002-07-23
申请号：US09921656
申请日：2001-08-06
申请人： Robert A. Groves , Dale K. Jadus , Dominique L. Nguyen-Ngoc , Keith M. Walter
发明人： Robert A. Groves , Dale K. Jadus , Dominique L. Nguyen-Ngoc , Keith M. Walter
IPC分类号： H01L21331
摘要： A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the array. At least one base contact overlies the at least one base region and is associated with each transistor. A plurality of the base contacts are common to at least two transistors in the array. At least one collector reach through is associated with each transistor. A collector reach through contact overlies each collector reach through. A buried layer subcollector region of electrically conducting material electrically connects the collector reach through region to the collector pedestal region of each transistor.

6. 发明授权

US06426547B1 Lateral polysilicon pin diode and method for so fabricating 失效
标题翻译：侧面多晶硅pin二极管及其制造方法
公开(公告)号：US06426547B1
公开(公告)日：2002-07-30
申请号：US09734624
申请日：2000-12-12
申请人： David R. Greenberg , Dale K. Jadus , Seshadri Subbanna , Keith M. Walter
发明人： David R. Greenberg , Dale K. Jadus , Seshadri Subbanna , Keith M. Walter
IPC分类号： H01L31075
CPC分类号： H01L29/868
摘要： The invention provides a PIN diode having a laterally extended I-region. The invention also provides a method of fabricating the inventive PIN diode compatible with modern RF technologies such as silicon-germanium BiCMOS processes.
摘要翻译：本发明提供了具有横向延伸的I区的PIN二极管。本发明还提供了一种制造本发明的PIN二极管的方法，该PIN二极管与诸如硅 - 锗BiCMOS工艺的现代RF技术兼容。

7. 发明授权

US06288608B1 Radio frequency power amplifier for a battery powered handset unit of a wireless communications system 有权
标题翻译：用于无线通信系统的电池供电手机单元的射频功率放大器
公开(公告)号：US06288608B1
公开(公告)日：2001-09-11
申请号：US09561305
申请日：2000-04-28
申请人： Dale K. Jadus , James M. Moniz , Joseph Pusl , Colin Ruhe , Carl Stuebing
发明人： Dale K. Jadus , James M. Moniz , Joseph Pusl , Colin Ruhe , Carl Stuebing
IPC分类号： H03F368
CPC分类号： H03F3/1935 , H03F1/0277
摘要： A radio frequency power amplifier for a battery powered handset unit of a wireless communications system having a low power signal amplification path and a high power signal amplification path. Logic and biasing means within the handset select between the low power signal path and the high power signal depending upon the handset being within or outside a prescribed distance from a base station. In this way, the signals received at the base station from the handset are at the required power level.
摘要翻译：一种用于具有低功率信号放大路径和高功率信号放大路径的无线通信系统的电池供电的手持机单元的射频功率放大器。手机内的逻辑和偏置装置在低功率信号路径和高功率信号之间选择，这取决于手机在距离基站的规定距离之内或之外。以这种方式，从手机在基站接收的信号处于所需的功率水平。

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