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1. 发明授权

US07479457B2 Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof 有权
标题翻译：用于从低k介电材料去除光致抗蚀剂和后蚀刻残留物的气体混合物及其使用方法
公开(公告)号：US07479457B2
公开(公告)日：2009-01-20
申请号：US11220710
申请日：2005-09-08
申请人： Cristian Paduraru , Alan Jensen , David Schaefer , Robert Charatan , Tom Choi
发明人： Cristian Paduraru , Alan Jensen , David Schaefer , Robert Charatan , Tom Choi
IPC分类号： H01L21/461
CPC分类号： G03F7/427
摘要： Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen in a hydrogen stripping plasma improves both photoresist strip rate and uniformity, while maintaining a hydrogen to oxygen ratio avoids low-k dielectric material damage.
摘要翻译：在氧气剥离等离子体中产生的原子氧在电介质蚀刻残留物的剥离期间与低k电介质材料反应并损坏。尽管在剥离电介质后蚀刻残留物时低k电介质材料的损伤随氢气剥离等离子体而降低，但氢气剥离等离子体显示较低的剥离速率。在氢气剥离等离子体中包含氧气可改善光致抗蚀剂剥离速率和均匀性，同时保持氢气与氧气的比例可以避免低k电介质材料损坏。

2. 发明申请

US20070054496A1 Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof 有权
标题翻译：用于从低k介电材料去除光致抗蚀剂和后蚀刻残留物的气体混合物及其使用方法
公开(公告)号：US20070054496A1
公开(公告)日：2007-03-08
申请号：US11220710
申请日：2005-09-08
申请人： Cristian Paduraru , Alan Jensen , David Schaefer , Robert Charatan , Tom Choi
发明人： Cristian Paduraru , Alan Jensen , David Schaefer , Robert Charatan , Tom Choi
IPC分类号： B08B6/00 , H01L21/461 , H01L21/302 , B44C1/22
CPC分类号： G03F7/427
摘要： Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen in a hydrogen stripping plasma improves both photoresist strip rate and uniformity, while maintaining a hydrogen to oxygen ratio avoids low-k dielectric material damage.
摘要翻译：在氧气剥离等离子体中产生的原子氧在电介质蚀刻残留物的剥离期间与低k电介质材料反应并损坏。尽管在剥离电介质后蚀刻残留物时低k电介质材料的损伤随氢气剥离等离子体而降低，但氢气剥离等离子体显示较低的剥离速率。在氢气剥离等离子体中包含氧气可改善光致抗蚀剂剥离速率和均匀性，同时保持氢气与氧气的比例可以避免低k电介质材料损坏。

3. 发明授权

US5784787A Sheet metal penetrating tool 失效
标题翻译：钣金穿透工具
公开(公告)号：US5784787A
公开(公告)日：1998-07-28
申请号：US833021
申请日：1997-01-03
申请人： Alan Jensen
发明人： Alan Jensen
IPC分类号： B26B3/00 , B26F1/00
CPC分类号： B26B3/00
摘要： A tool used to penetrate ductile sheet metal as the initial penetration in preparation for the attachment or installation of ducting and piping and particularly to forming the initial penetration in sheet metal sheet or ducting from which an opening is made for the attachment of lateral, feed, supply or return duct pipe in heating and air conditioning systems and other process or manufacturing systems employing sheet metal in the system construction. The tool has a shaft with a handle, a top edge and a blade edge with a penetrating point extending from the blade edge. An anvil is affixed to the top edge. A sheet metal workpiece is struck by the tool with the penetrating point causing a penetration in the sheet metal surface in preparation of attachment of ducting or other heating, ventilation and air-conditioning or process systems. A duct opening is then completed by the craftsman hammering the tool by striking the anvil and causing the shaft blade edge to cut the sheet metal or by use of tin snips inserted into the opening made by the initial penetration.
摘要翻译：用于穿透延展性金属板作为初始穿透的工具，用于准备连接或安装管道和管道，特别是用于在金属片材或导管中形成初始穿透，从该开口穿过开口用于附接侧向进料，在采暖和空调系统中的供应或返回管道管道以及在系统结构中采用钣金的其他工艺或制造系统。该工具具有带柄的轴，顶部边缘和具有从刀片边缘延伸的穿透点的刀片边缘。砧座固定在顶边。钣金工件被工具撞击，穿透点导致在金属板表面中的穿透，以准备管道或其他加热，通风和空调或过程系统的附接。然后，工匠通过撞击砧锤击工具并使轴刀片边缘切割金属片或通过使用插入由初始穿透形成的开口中的锡钳来完成管道开口。

4. 发明申请

US20110223770A1 NITRIDE PLASMA ETCH WITH HIGHLY TUNABLE SELECTIVITY TO OXIDE 审中-公开
标题翻译：氮氧化物等离子体具有高度可选择性的氧化物
公开(公告)号：US20110223770A1
公开(公告)日：2011-09-15
申请号：US12724100
申请日：2010-03-15
申请人： Alan Jensen , Mayumi Block
发明人： Alan Jensen , Mayumi Block
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/31116
摘要： A method for selectively etching a nitride layer with respect to a silicon oxide based layer over a substrate is provided. The substrate is placed in a plasma processing chamber. The nitride layer is etched, comprising the steps of flowing a nitride etch gas comprising a hydrocarbon species, an oxygen containing species and a fluorocarbon or hydrofluorocarbon species into the plasma chamber, forming a plasma from the nitride etch gas, and using the plasma from the nitride etch gas to selectively etch the nitride layer with respect to the silicon oxide based layer.
摘要翻译：提供了一种在衬底上相对于氧化硅基层选择性地蚀刻氮化物层的方法。将基板放置在等离子体处理室中。蚀刻氮化物层，包括将包含烃类，含氧物质和碳氟化合物或氢氟烃物质的氮化物蚀刻气体流入等离子体室的步骤，从氮化物蚀刻气体形成等离子体，并使用来自氮化物蚀刻气体，以相对于氧化硅基层选择性地蚀刻氮化物层。

5. 发明授权

US06769970B1 Fluid venting platen for optimizing wafer polishing 失效
标题翻译：流体排气台，用于优化晶圆抛光
公开(公告)号：US06769970B1
公开(公告)日：2004-08-03
申请号：US10186909
申请日：2002-06-28
申请人： Travis Robert Taylor , Alan Jensen
发明人： Travis Robert Taylor , Alan Jensen
IPC分类号： B24B100
CPC分类号： B24B37/16 , B24B21/10
摘要： A platen is provided for use in a chemical mechanical planarization (CMP) system. The platen includes at least one fluid output zone having a plurality of fluid outlets, the at least one fluid output zone being disposed below a polishing pad and being capable of providing fluid pressure to the polishing pad. The platen also includes at least one fluid input zone having a plurality of fluid inlets, the at least one fluid input zone being disposed below the polishing pad and being capable of removing the fluid pressure. The platen is capable of managing fluid pressure applied to the polishing pad to achieve a particular polishing profile during a CMP operation.
摘要翻译：提供了用于化学机械平面化（CMP）系统的压板。压板包括具有多个流体出口的至少一个流体输出区域，该至少一个流体输出区域设置在抛光垫的下方并且能够向抛光垫提供流体压力。压盘还包括具有多个流体入口的至少一个流体输入区域，该至少一个流体输入区域设置在抛光垫的下方并且能够去除流体压力。压板能够管理施加到抛光垫的流体压力，以在CMP操作期间实现特定的抛光轮廓。

6. 发明申请

US20090291562A1 HELIUM DESCUMMING 审中-公开
公开(公告)号：US20090291562A1
公开(公告)日：2009-11-26
申请号：US12124005
申请日：2008-05-20
申请人： Alan Jensen
发明人： Alan Jensen
IPC分类号： H01L21/461 , B08B6/00
CPC分类号： H01L21/31144 , H01L21/0273
摘要： A method for forming semiconductor devices is provided. A wafer with a patterned photoresist mask over the wafer, wherein the patterned photoresist mask has patterned photoresist mask features with scum at bottoms of the photoresist mask features is provided. The scum is removed from the bottoms of the photoresist mask features, comprising: providing a descumming gas consisting essentially of helium and forming the helium into a plasma, which removes the scum.
摘要翻译：提供了一种用于形成半导体器件的方法。具有在晶片上的图案化光致抗蚀剂掩模的晶片，其中图案化的光致抗蚀剂掩模具有图案化的光刻胶掩模特征，在光致抗蚀剂掩模特征的底部具有浮渣。从光致抗蚀剂掩模特征的底部去除浮渣，包括：提供基本上由氦组成的除氧气体，并将氦形成等离子体，其除去浮渣。

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