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1. 发明授权

US08051863B2 Methods of and apparatus for correlating gap value to meniscus stability in processing of a wafer surface by a recipe-controlled meniscus 有权
标题翻译：通过配方控制的弯月面在晶片表面处理中将间隙值与弯液面稳定性相关联的方法和装置
公开(公告)号：US08051863B2
公开(公告)日：2011-11-08
申请号：US12246461
申请日：2008-10-06
申请人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
发明人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： Apparatus monitors a meniscus process that is performed on wafers. Monitoring data for a current process received by a processor indicates characteristics of a gap between the wafer and a process head. The processor is configured to respond to the data that is in the form of orientation monitor signals and to respond to a current recipe. The processor generates meniscus monitor signals for allowing the meniscus to remain stable in further meniscus processing. The monitoring is of current meniscus processing to determine whether a current gap (i) is other than a desired gap of the current recipe, and (ii) corresponds to a stable meniscus. If so, a calibration recipe is identified as specifying the current gap. This calibration recipe specifies parameters for meniscus processing the wafer surface with the current gap. The meniscus processing of the wafer surface is continued using the parameters specified by the identified calibration recipe.
摘要翻译：仪器监测在晶片上进行的弯液面过程。由处理器接收的当前处理的监视数据指示晶片和处理头之间的间隙的特征。处理器被配置为响应以定向监视器信号的形式的数据并响应当前配方。处理器产生弯液面监测信号，以允许弯液面在进一步的弯液面处理中保持稳定。监测目前的弯液面处理以确定当前间隙（i）是否不同于当前配方的期望间隙，并且（ii）对应于稳定的弯液面。如果是这样，则校准配方被识别为指定当前间隙。该校准配方规定了具有当前间隙的晶片表面弯月面处理的参数。使用由所标识的校准配方指定的参数继续晶片表面的弯液面处理。

2. 发明申请

US20090101173A1 METHODS OF AND APPARATUS FOR CORRELATING GAP VALUE TO MENISCUS STABILITY IN PROCESSING OF A WAFER SURFACE BY A RECIPE-CONTROLLED MENISCUS 有权
标题翻译：方法和装置，用于通过受控控制的菜单将水平值与相对稳定性相关联
公开(公告)号：US20090101173A1
公开(公告)日：2009-04-23
申请号：US12246461
申请日：2008-10-06
申请人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
发明人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： Apparatus monitors a meniscus process that is performed on wafers. Monitoring data for a current process received by a processor indicates characteristics of a gap between the wafer and a process head. The processor is configured to respond to the data that is in the form of orientation monitor signals and to respond to a current recipe. The processor generates meniscus monitor signals for allowing the meniscus to remain stable in further meniscus processing. The monitoring is of current meniscus processing to determine whether a current gap (i) is other than a desired gap of the current recipe, and (ii) corresponds to a stable meniscus. If so, a calibration recipe is identified as specifying the current gap. This calibration recipe specifies parameters for meniscus processing the wafer surface with the current gap. The meniscus processing of the wafer surface is continued using the parameters specified by the identified calibration recipe.
摘要翻译：仪器监测在晶片上进行的弯液面过程。由处理器接收的当前处理的监视数据指示晶片和处理头之间的间隙的特征。处理器被配置为响应以定向监视器信号的形式的数据并响应当前配方。处理器产生弯液面监测信号，以允许弯液面在进一步的弯液面处理中保持稳定。监测目前的弯液面处理以确定当前间隙（i）是否不同于当前配方的期望间隙，并且（ii）对应于稳定的弯液面。如果是这样，则校准配方被识别为指定当前间隙。该校准配方规定了具有当前间隙的晶片表面弯月面处理的参数。使用由所标识的校准配方指定的参数继续晶片表面的弯液面处理。

3. 发明申请

US20120006359A1 METHODS FOR CORRELATING GAP VALUE TO MENISCUS STABILITY IN PROCESSING OF A WAFER SURFACE BY A RECIPE-CONTROLLED MENISCUS 有权
标题翻译：通过受控控制的菜单将水平值与沟道稳定性相关联的方法
公开(公告)号：US20120006359A1
公开(公告)日：2012-01-12
申请号：US13241122
申请日：2011-09-22
申请人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
发明人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： Methods for monitoring meniscus processing of a wafer surface to stabilize a meniscus are provided. In one example, the processing is in response to a current recipe that defines a desired gap between the wafer surface and a proximity head. The method includes the operations of monitoring current meniscus processing to determine that a current gap is other than the desired gap, and identifying a calibration recipe that specifies the current gap. The method then continues the meniscus processing of the wafer surface using process parameters specified by the identified calibration recipe.
摘要翻译：提供了用于监测晶片表面的弯月面处理以稳定弯液面的方法。在一个示例中，处理响应于限定晶片表面和邻近头之间的期望间隙的当前配方。该方法包括监视当前弯月面处理以确定当前间隙不是期望间隙的操作，以及识别指定当前间隙的校准配方。然后，该方法使用由所识别的校准配方指定的过程参数来继续晶片表面的弯液面处理。

4. 发明授权

US08287656B2 Methods for correlating gap value to meniscus stability in processing of a wafer surface by a recipe-controlled meniscus 有权
标题翻译：通过配方控制的弯液面在晶片表面处理中将间隙值与弯液面稳定性相关联的方法
公开(公告)号：US08287656B2
公开(公告)日：2012-10-16
申请号：US13241122
申请日：2011-09-22
申请人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
发明人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： Methods for monitoring meniscus processing of a wafer surface to stabilize a meniscus are provided. In one example, the processing is in response to a current recipe that defines a desired gap between the wafer surface and a proximity head. The method includes the operations of monitoring current meniscus processing to determine that a current gap is other than the desired gap, and identifying a calibration recipe that specifies the current gap. The method then continues the meniscus processing of the wafer surface using process parameters specified by the identified calibration recipe.
摘要翻译：提供了用于监测晶片表面的弯月面处理以稳定弯液面的方法。在一个示例中，处理响应于限定晶片表面和邻近头之间的期望间隙的当前配方。该方法包括监视当前弯月面处理以确定当前间隙不是期望间隙的操作，以及识别指定当前间隙的校准配方。然后，该方法使用由所识别的校准配方指定的过程参数来继续晶片表面的弯液面处理。

5. 发明授权

US08679252B2 Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof 有权
标题翻译：具有改进的颗粒性能的主动加热铝挡板部件及其使用和制造方法
公开(公告)号：US08679252B2
公开(公告)日：2014-03-25
申请号：US11232991
申请日：2005-09-23
申请人： Hong Shih , G. Grant Peng , Daxing Ren
发明人： Hong Shih , G. Grant Peng , Daxing Ren
IPC分类号： C23C16/00 , C23C16/455 , C23C16/50 , H01L21/3065
CPC分类号： H01L21/3065 , C23C16/4401 , C25D11/04 , H01J37/32623 , H01J37/32633 , H01L21/02041 , H01L21/67069
摘要： An actively heated aluminum baffle component such as a thermal control plate or baffle ring of a showerhead electrode assembly of a plasma processing chamber has an exposed outer aluminum oxide layer which is formed by an electropolishing procedure. The exposed outer aluminum oxide layer minimizes defects and particles generated as a result of differential thermal stresses experienced by the aluminum component and outer aluminum oxide layer during plasma processing compared to an identically shaped component having a Type III anodized surface.
摘要翻译：主动加热的铝制挡板部件，例如等离子体处理室的喷头电极组件的热控制板或挡板环，具有通过电抛光工艺形成的暴露的外部氧化铝层。暴露的外部氧化铝层使得与等离子体处理相比，具有III型阳极氧化表面的相同形状的部件相比，由于铝组分和外部氧化铝层在等离子体处理期间经受的差异热应力而产生的缺陷和颗粒最小化。

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