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1. 发明授权

US08207005B2 Forming solar cells using a patterned deposition process 失效
标题翻译：使用图案化沉积工艺形成太阳能电池
公开(公告)号：US08207005B2
公开(公告)日：2012-06-26
申请号：US13042313
申请日：2011-03-07
申请人： Timothy W. Weidman , Rohit Mishra , Michael P. Stewart , Kapila P. Wijekoon , Yonghwa Chris Cha , Tristan Holtam , Vinay Shah
发明人： Timothy W. Weidman , Rohit Mishra , Michael P. Stewart , Kapila P. Wijekoon , Yonghwa Chris Cha , Tristan Holtam , Vinay Shah
IPC分类号： H01L21/00 , H01L21/76 , H01L21/331 , H01L21/20 , H01L33/00
CPC分类号： H01L21/67034 , G01T1/2018 , H01L21/225 , H01L21/306 , H01L21/308 , H01L21/67727 , H01L21/67736 , H01L21/67745 , H01L21/6776 , H01L31/022441 , H01L31/0516 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.
摘要翻译：本发明的实施例考虑使用新的方法形成高效太阳能电池，以形成太阳能电池器件的有源掺杂区域和金属接触结构。在一个实施例中，所述方法包括沉积用于限定太阳能电池器件的有源区域和/或接触结构的边界的介电材料的步骤。可以使用各种技术来形成太阳能电池的有源区域和金属接触结构。

2. 发明授权

US07665773B2 Self-tightening clamp assemblies for protection against full pipe separation 有权
标题翻译：自紧式夹紧组件，用于防止全管道分离
公开(公告)号：US07665773B2
公开(公告)日：2010-02-23
申请号：US11425577
申请日：2006-06-21
申请人： James W. Jones , Meir Snir , Hooshang Jozavi , Herschel Evans , Nasbi Guzman , Mike Litschewski , Chris Cha , Rick Larson
发明人： James W. Jones , Meir Snir , Hooshang Jozavi , Herschel Evans , Nasbi Guzman , Mike Litschewski , Chris Cha , Rick Larson
IPC分类号： F16L19/08 , F16L21/06
CPC分类号： F16L25/12 , F16L55/172
摘要： Improved self-tightening clamp assemblies are designed for application to the adjacent ends of connected pipe sections in spanning relationship to the joint therebetween. The assemblies include a plurality of clamp bodies configured for placement about the adjacent pipe section ends and carrying a plurality of pipe-engaging teeth; a clamping mechanism is operably coupled with the clamp bodies to cause the teeth to grippingly engage the pipe section ends. The teeth are oriented so as to exert an increasing gripping force on the pipe sections ends in the event of relative separation movement between the ends.
摘要翻译：改进的自紧夹具组件设计用于与连接的管段相邻的端部应用于与它们之间的接合。组件包括多个夹具构造，用于围绕相邻管段端部放置并承载多个管接合齿; 夹紧机构与夹具主体可操作地联接，以使得齿与管段末端夹紧接合。这些齿被定向以便在端部之间相对分离运动的情况下，在管段端部上施加增加的夹持力。

3. 发明申请

US20100015756A1 HYBRID HETEROJUNCTION SOLAR CELL FABRICATION USING A DOPING LAYER MASK 失效
标题翻译：混合异常太阳能电池制造使用DOPING LAYER MASK
公开(公告)号：US20100015756A1
公开(公告)日：2010-01-21
申请号：US12504216
申请日：2009-07-16
申请人： Timothy W. Weidman , Rohit Mishra , Michael P. Stewart , Yonghwa Chris Cha , Kapila P. Wijekoon , Hongbin Fang
发明人： Timothy W. Weidman , Rohit Mishra , Michael P. Stewart , Yonghwa Chris Cha , Kapila P. Wijekoon , Hongbin Fang
IPC分类号： H01L21/20 , H01L21/28 , C23F1/00
CPC分类号： H01L31/022425 , H01L21/67155 , H01L31/0236 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.
摘要翻译：本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。在一个实施例中，所述方法包括在衬底的背表面上形成掺杂层，加热掺杂层和衬底以使掺杂层扩散到衬底的背面，在加热掺杂之后纹理化衬底的前表面在基板的背面上形成电介质层，从基板的多个露出区域的背面去除电介质层的一部分，在该基板的背面上沉积金属层，其中所述金属层与所述衬底上的所述多个暴露区域中的至少一个电连通，并且所述暴露区域中的至少一个具有从所述掺杂层提供的掺杂剂原子。

4. 发明申请

US20080268636A1 DEPOSITION METHODS FOR BARRIER AND TUNGSTEN MATERIALS 失效
标题翻译：阻挡材料和金属材料的沉积方法
公开(公告)号：US20080268636A1
公开(公告)日：2008-10-30
申请号：US12171132
申请日：2008-07-10
申请人： Ki Hwan Yoon , Yonghwa Chris Cha , Sang Ho Yu , Hafiz Farooq Ahmad , Ho Sun Wee
发明人： Ki Hwan Yoon , Yonghwa Chris Cha , Sang Ho Yu , Hafiz Farooq Ahmad , Ho Sun Wee
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , C23C14/566 , C23C16/06 , C23C16/54 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/76846 , H01L21/76855 , H01L21/76864 , H01L21/76876
摘要： Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.
摘要翻译：本文所述的实施例提供了一种在衬底上沉积阻挡层和钨材料的方法。在一个实施例中，提供了一种用于沉积材料的方法，其包括在衬底上形成阻挡层，其中所述阻挡层包含钴硅化物层和金属钴层，将阻挡层暴露于含有还原气体的浸渍气体浸泡工艺，并在阻挡层上形成钨材料。在一个示例中，阻挡层可以通过在基底的电介质表面上沉积含钴材料并使基底退火以从含钴材料的下部和金属钴层形成钴硅化物层而形成，含钴材料的上部。

5. 发明授权

US07416979B2 Deposition methods for barrier and tungsten materials 有权
标题翻译：屏障和钨材料的沉积方法
公开(公告)号：US07416979B2
公开(公告)日：2008-08-26
申请号：US11456073
申请日：2006-07-06
申请人： Ki Hwan Yoon , Yonghwa Chris Cha , Sang Ho Yu , Hafiz Farooq Ahmad , Ho Sun Wee
发明人： Ki Hwan Yoon , Yonghwa Chris Cha , Sang Ho Yu , Hafiz Farooq Ahmad , Ho Sun Wee
IPC分类号： H01L21/00
CPC分类号： H01L21/76846 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76855 , H01L21/76864
摘要： Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the substrate to a silane gas to form a thin silicon-containing layer on the barrier layer during a soak process. The method further provides depositing a tungsten nucleation layer over the barrier layer and the thin silicon-containing layer during an atomic layer deposition process and depositing a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition process. In some examples, the barrier layer contains metallic cobalt and cobalt silicide, or metallic nickel and nickel silicide. In other examples, the barrier layer contains metallic titanium and titanium nitride, or metallic tantalum and tantalum nitride.
摘要翻译：提供了一种在衬底上沉积阻挡层和钨材料的方法的实施例。在一个实施例中，一种方法提供在衬底上形成阻挡层并将衬底暴露于硅烷气体，以在浸泡过程期间在阻挡层上形成薄的含硅层。该方法还进一步在原子层沉积工艺期间在阻挡层和薄的含硅层上沉积钨成核层，并在化学气相沉积工艺期间在钨成核层上沉积钨体层。在一些示例中，阻挡层包含金属钴和钴硅化物，或金属镍和镍硅化物。在其它实例中，阻挡层包含金属钛和氮化钛，或金属钽和氮化钽。

6. 发明授权

US06740585B2 Barrier formation using novel sputter deposition method with PVD, CVD, or ALD 有权
标题翻译：使用PVD，CVD或ALD的新型溅射沉积方法形成阻挡层
公开(公告)号：US06740585B2
公开(公告)日：2004-05-25
申请号：US10044412
申请日：2002-01-09
申请人： Ki Hwan Yoon , Yonghwa Chris Cha , Sang Ho Yu , Hafiz Farooq Ahmad , Ho Sun Wee
发明人： Ki Hwan Yoon , Yonghwa Chris Cha , Sang Ho Yu , Hafiz Farooq Ahmad , Ho Sun Wee
IPC分类号： H01L2141
CPC分类号： H01L21/76843 , C23C14/566 , C23C16/06 , C23C16/54 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/76846 , H01L21/76855 , H01L21/76864 , H01L21/76876
摘要： Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate surface in a first processing chamber, forming a metal silicide layer by reacting the silicon material and the first metal layer, and depositing a second metal layer in situ on the substrate in a second processing chamber. In another aspect, the method is performed in an apparatus including a load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber coupled to the first substrate transfer chamber, and a chemical vapor deposition chamber coupled to the second substrate transfer chamber.
摘要翻译：提供了用于形成金属或金属硅化物阻挡层的方法和装置。一方面，提供了一种处理衬底的方法，包括将其上设置有硅材料的衬底定位在衬底处理系统中，在第一处理室中在衬底表面上沉积第一金属层，通过使硅材料和第一金属层，并且在第二处理室中在基底上原位沉积第二金属层。另一方面，该方法在包括负载锁定室的设备中进行，中间衬底传送区域包括第一衬底传送室和第二衬底传送室，耦合到第一衬底传送室的物理气相沉积处理室，以及耦合到第二衬底传送室的化学气相沉积室。

7. 发明授权

US08309446B2 Hybrid heterojunction solar cell fabrication using a doping layer mask 失效
标题翻译：使用掺杂层掩模的混合异质结太阳能电池制造
公开(公告)号：US08309446B2
公开(公告)日：2012-11-13
申请号：US12504216
申请日：2009-07-16
申请人： Timothy W. Weidman , Rohit Mishra , Michael P. Stewart , Yonghwa Chris Cha , Kapila P. Wijekoon , Hongbin Fang
发明人： Timothy W. Weidman , Rohit Mishra , Michael P. Stewart , Yonghwa Chris Cha , Kapila P. Wijekoon , Hongbin Fang
IPC分类号： H01L21/225 , H01L21/385
CPC分类号： H01L31/022425 , H01L21/67155 , H01L31/0236 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.
摘要翻译：本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。在一个实施例中，所述方法包括在衬底的背表面上形成掺杂层，加热掺杂层和衬底以使掺杂层扩散到衬底的背面，在加热掺杂之后纹理化衬底的前表面在基板的背面上形成电介质层，从基板的多个露出区域的背面去除电介质层的一部分，在该基板的背面上沉积金属层，其中所述金属层与所述衬底上的所述多个暴露区域中的至少一个电连通，并且所述暴露区域中的至少一个具有从所述掺杂层提供的掺杂剂原子。

8. 发明申请

US20070296213A1 SELF-TIGHTENING CLAMP ASSEMBLIES FOR PROTECTION AGAINST FULL PIPE SEPARATION 有权
标题翻译：自保护钳组件防止全套管道分离
公开(公告)号：US20070296213A1
公开(公告)日：2007-12-27
申请号：US11425577
申请日：2006-06-21
申请人： James W. Jones , Meir Snir , Hooshang Jozavi , Hersehel Evans , Nasbi Guzman , Mike Litschewski , Chris Cha , Rick Larson
发明人： James W. Jones , Meir Snir , Hooshang Jozavi , Hersehel Evans , Nasbi Guzman , Mike Litschewski , Chris Cha , Rick Larson
IPC分类号： F16L25/00 , F16L21/02
CPC分类号： F16L25/12 , F16L55/172
摘要： Improved self-tightening clamp assemblies are provided, which are designed for application to the adjacent ends of connected pipe sections in spanning relationship to the joint therebetween. The assemblies include a plurality of clamp bodies configured for placement about the adjacent pipe section ends and carrying a plurality of pipe-engaging teeth; a clamping mechanism is operably coupled with the clamp bodies to cause the teeth to grippingly engage the pipe section ends. The teeth are oriented so as to exert an increasing gripping force on the pipe sections ends in the event of relative separation movement between the ends.
摘要翻译：提供了改进的自紧夹具组件，其被设计用于与连接的管段相邻的端部应用于与它们之间的接合。组件包括多个夹具构造，用于围绕相邻管段端部放置并承载多个管接合齿; 夹紧机构与夹具主体可操作地联接，以使得齿与管段末端夹紧接合。这些齿被定向以便在端部之间相对分离运动的情况下，在管段端部上施加增加的夹持力。

9. 发明授权

US06660135B2 Staged aluminum deposition process for filling vias 失效
标题翻译：分阶段铝沉积工艺用于填充过孔
公开(公告)号：US06660135B2
公开(公告)日：2003-12-09
申请号：US10038199
申请日：2001-12-21
申请人： Sang-Ho Yu , Yonghwa Chris Cha , Murali Abburi , Shri Singhvi , Fufa Chen
发明人： Sang-Ho Yu , Yonghwa Chris Cha , Murali Abburi , Shri Singhvi , Fufa Chen
IPC分类号： C25C1434
CPC分类号： H01L21/76882
摘要： A semiconductor metallization process for providing complete via fill on a substrate, free of voids, and a planar metal surface, free of grooves. In one aspect, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A conformal PVD metal layer, such as Al or Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr. The vias and/or contacts are then filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably performed in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by at least 100 mm, and a hot metal PVD chamber, also serving as a reflow chamber.
摘要翻译：一种半导体金属化工艺，用于在没有空隙的基板上提供完整的通孔填充，以及没有凹槽的平面金属表面。在一个方面，将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。然后将保形PVD金属层（例如Al或Cu）以低于约1毫托的压力沉积到耐火层上。然后，通孔和/或触点用金属填充，例如通过将通过物理气相沉积沉积的附加金属回流到共形PVD金属层上。该方法优选在包括长抛PVD室的集成处理系统中进行，其中靶和基板被分开至少100mm，以及也用作回流室的热金属PVD室。

10. 发明授权

US06271592B1 Sputter deposited barrier layers 失效
标题翻译：溅射沉积的阻挡层
公开(公告)号：US06271592B1
公开(公告)日：2001-08-07
申请号：US09370088
申请日：1999-08-06
申请人： Edwin Kim , Michael Nam , Chris Cha , Gongda Yao , Sophia Lee , Fernand Dorleans , Gene Y. Kohara , Jianming Fu
发明人： Edwin Kim , Michael Nam , Chris Cha , Gongda Yao , Sophia Lee , Fernand Dorleans , Gene Y. Kohara , Jianming Fu
IPC分类号： H01L2348
CPC分类号： H01L21/76856 , C23C14/0641 , C23C14/0676 , C23C14/083 , C23C14/185 , C23C14/32 , H01L21/28518 , H01L21/2855 , H01L21/76843 , H01L21/76846 , H01L21/76855
摘要： The present disclosure pertains to our discovery that depositing various film layers in a particular order using a combination of Ion Metal Plasma (IMP) and traditional sputter deposition techniques with specific process conditions results in a barrier layer structure which provides excellent barrier properties and allows for metal/conductor filling of contact sizes down to 0.25 micron and smaller without junction spiking. Specifically, the film layers are deposited on a substrate in the following order: (a) a first layer of a barrier metal (M), deposited by IMP sputter deposition; (b) a second layer of an oxygen-stuffed barrier metal (MOx), an oxygen-stuffed nitride of a barrier metal (MNOx), or a combination thereof; (c) a third layer of a nitride of a barrier metal (MNx), deposited by IMP sputter deposition of the barrier metal in the presence of nitrogen; and (d) a fourth, wetting layer of a barrier metal, deposited by traditional sputter deposition. The first layer of barrier metal can optionally be annealed to form a silicide of the barrier metal (MSi2) in order to reduce contact resistance and interdiffusion of the silicon and metal/conductor which may result form overetching of contacts. An additional layer of barrier metal can optionally be deposited between the second oxygen-stuffed layer and the third barrier metal nitride layer in order to further improve the barrier properties of the barrier layer structure and to provide for better metal/conductor fill. A thin layer of metal/conductor may be deposited on the walls of the contact via by “long throw” sputter deposition prior to filling the via with metal/conductor in order to provide more uniform fill. The optimum process conditions for sputter deposition of the barrier layer structure of the invention are disclosed herein.
摘要翻译：本公开涉及我们的发现，使用离子金属等离子体（IMP）和具有特定工艺条件的传统溅射沉积技术的组合以特定顺序沉积各种膜层导致阻挡层结构，其提供优异的阻隔性能并允许金属 /导体填充接触尺寸低至0.25微米及更小，无接头尖峰。具体地，以下列顺序将膜层沉积在衬底上：（a）通过IMP溅射沉积沉积的第一层阻挡金属（M）; （b）第二层氧填充阻隔金属（MOx），阻挡金属（MNOx）的氧气氮化物或其组合; （c）通过在氮气存在下通过IMP溅射沉积阻挡金属而沉积的阻挡金属（MNx）的氮化物的第三层; 和（d）通过传统溅射沉积沉积的阻挡金属的第四润湿层。阻挡金属的第一层可以任意地退火以形成阻挡金属（MSi2）的硅化物，以便降低可能导致触点过蚀刻的硅和金属/导体的接触电阻和相互扩散。可以可选地在第二氧填充层和第三阻挡金属氮化物层之间沉积另外的阻挡金属层，以便进一步改善阻挡层结构的阻挡性能并提供更好的金属/导体填充。在通过金属/导体填充通孔之前，可以通过“长抛”溅射沉积将薄的金属/导体层沉积在接触孔的壁上，以便提供更均匀的填充。本文公开了本发明的阻挡层结构的溅射沉积的最佳工艺条件。

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