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1. 发明申请

US20120244704A1 METHOD FOR REMOVING OXIDES 有权
标题翻译：去除氧化物的方法
公开(公告)号：US20120244704A1
公开(公告)日：2012-09-27
申请号：US13489137
申请日：2012-06-05
申请人： Chien-Teh KAO , Jing-Pei(Connie) CHOU , Chiukin(Steven) LAI , Sal UMOTOY , Joel M. HUSTON , Son TRINH , Mei CHANG , Xiaoxiong (John) YUAN , Yu CHANG , Xinliang LU , Wei W. WANG , See-Eng PHAN
发明人： Chien-Teh KAO , Jing-Pei(Connie) CHOU , Chiukin(Steven) LAI , Sal UMOTOY , Joel M. HUSTON , Son TRINH , Mei CHANG , Xiaoxiong (John) YUAN , Yu CHANG , Xinliang LU , Wei W. WANG , See-Eng PHAN
IPC分类号： H01L21/3205
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，将衬底暴露于气体混合物，同时在衬底上形成挥发性膜并将衬底保持在低于65℃的温度下，加热衬底达到至少约75℃的温度以使挥发性膜升华并去除氧化物层，并且在加热基材之后在基板上沉积第一层。

2. 发明申请

US20090111280A1 METHOD FOR REMOVING OXIDES 审中-公开
标题翻译：去除氧化物的方法
公开(公告)号：US20090111280A1
公开(公告)日：2009-04-30
申请号：US12328466
申请日：2008-12-04
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/31
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，从处理室内的气体混合物产生反应物质的等离子体，将衬底暴露于反应性物质，同时在衬底上形成挥发性膜并将衬底保持在低于65℃的温度下，将衬底加热到至少约75℃的温度以蒸发挥发性膜并去除氧化物层，并且在加热衬底之后在衬底上沉积第一层。

3. 发明申请

US20080268645A1 METHOD FOR FRONT END OF LINE FABRICATION 有权
标题翻译：前线制造方法
公开(公告)号：US20080268645A1
公开(公告)日：2008-10-30
申请号：US12134715
申请日：2008-06-06
申请人： CHIEN-TEH KAO , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： CHIEN-TEH KAO , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/311
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.
摘要翻译：在一个实施例中，提供了从衬底表面去除天然氧化物的方法，其包括在处理室内支撑含有氧化硅的衬底，从处理室内的气体混合物产生反应物质的等离子体，将衬底冷却至第一在处理室内温度小于约65℃，并且将反应性物质引导到冷却的基底以与其上的氧化硅反应，同时在基底上形成膜。该膜通常含有六氟硅酸铵。该方法进一步提供将衬底定位在紧邻气体分配板的位置，并将衬底加热至处理室内约100℃或更高的第二温度以升华或去除膜。气体混合物可以含有氨，三氟化氮和载气。

4. 发明授权

US08846163B2 Method for removing oxides 有权
标题翻译：去除氧化物的方法
公开(公告)号：US08846163B2
公开(公告)日：2014-09-30
申请号：US13489137
申请日：2012-06-05
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： B05D3/06 , H05B3/00 , C23C16/00 , H01J37/32 , H01L21/67 , H01L21/02
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，将衬底暴露于气体混合物，同时在衬底上形成挥发性膜并将衬底保持在低于65℃的温度下，加热衬底达到至少约75℃的温度以使挥发性膜升华并去除氧化物层，并且在加热基材之后在基板上沉积第一层。

5. 发明申请

US20110223755A1 METHOD FOR REMOVING OXIDES 审中-公开
标题翻译：去除氧化物的方法
公开(公告)号：US20110223755A1
公开(公告)日：2011-09-15
申请号：US13112875
申请日：2011-05-20
申请人： CHIEN-TEH KAO , Jing-Pei(Connie) Chou , Chiukin(Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： CHIEN-TEH KAO , Jing-Pei(Connie) Chou , Chiukin(Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/28
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，从处理室内的气体混合物产生反应物质的等离子体，将衬底暴露于反应性物质，同时在衬底上形成挥发性膜并将衬底保持在低于65℃的温度下，将衬底加热到至少约75℃的温度以蒸发挥发性膜并去除氧化物层，并且在加热衬底之后在衬底上沉积第一层。

6. 发明授权

US07767024B2 Method for front end of line fabrication 有权
标题翻译：前端制造方法
公开(公告)号：US07767024B2
公开(公告)日：2010-08-03
申请号：US12134715
申请日：2008-06-06
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/302
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.
摘要翻译：在一个实施例中，提供了从衬底表面去除天然氧化物的方法，其包括在处理室内支撑含有氧化硅的衬底，从处理室内的气体混合物产生反应物质的等离子体，将衬底冷却至第一在处理室内温度小于约65℃，并且将反应性物质引导到冷却的基底以与其上的氧化硅反应，同时在基底上形成膜。该膜通常含有六氟硅酸铵。该方法进一步提供将衬底定位在紧邻气体分配板的位置，并将衬底加热至处理室内约100℃或更高的第二温度以升华或去除膜。气体混合物可以含有氨，三氟化氮和载气。

7. 发明申请

US20050221552A1 Substrate support for in-situ dry clean chamber for front end of line fabrication 审中-公开
标题翻译：用于前端线制造的原位干洗室的基板支撑
公开(公告)号：US20050221552A1
公开(公告)日：2005-10-06
申请号：US11137090
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
IPC分类号： H01L21/28 , C23C16/455 , C23F1/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/8238 , H01L23/12 , H01L23/52
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A substrate support assembly and method for supporting a substrate are provided. In at least one embodiment, the support assembly includes a body having one or more fluid conduits disposed therethrough, and a support member disposed on a first end of the body. The support member includes one or more fluid channels formed in an upper surface thereof, wherein each fluid channel is in communication with the one or more of the fluid conduits. The support assembly also includes a cooling medium source in fluid communication with the one or more fluid conduits, and a first electrode having a plurality of holes formed therethrough. The first electrode is disposed on the upper surface of the support member such that each of the plurality of holes is in fluid communication with at least one of the one or more fluid channels formed in the upper surface of the support member.
摘要翻译：提供了一种用于支撑衬底的衬底支撑组件和方法。在至少一个实施例中，支撑组件包括具有设置在其中的一个或多个流体导管的主体和设置在主体的第一端上的支撑构件。支撑构件包括形成在其上表面中的一个或多个流体通道，其中每个流体通道与一个或多个流体导管连通。支撑组件还包括与一个或多个流体导管流体连通的冷却介质源，以及具有穿过其形成的多个孔的第一电极。第一电极设置在支撑构件的上表面上，使得多个孔中的每一个与形成在支撑构件的上表面中的一个或多个流体通道中的至少一个流体连通。

8. 发明授权

US08617348B1 Modulating etch selectivity and etch rate of silicon nitride thin films 有权
标题翻译：调制氮化硅薄膜的蚀刻选择性和蚀刻速率
公开(公告)号：US08617348B1
公开(公告)日：2013-12-31
申请号：US13461080
申请日：2012-05-01
申请人： Xinye Liu , Chiukin Steven Lai
发明人： Xinye Liu , Chiukin Steven Lai
IPC分类号： C23F1/08 , H01L21/306 , H01L21/67
CPC分类号： C23F1/08 , H01L21/0206 , H01L21/02063 , H01L21/31116 , H01L21/67069 , H01L21/76229 , H01L21/76814 , H01L21/76837
摘要： Etching of nitride and oxide layers with reactant gases is modulated by etching in different process regimes. High etch selectivity to silicon nitride is achieved in an adsorption regime where the partial pressure of the etchant is lower than its vapor pressure. Low etch selectivity to silicon nitride is achieved in a condensation regime where the partial pressure of the etchant is higher than its vapor pressure. By controlling partial pressure of the etchant, very high etch selectivity to silicon nitride may be achieved.
摘要翻译：用反应气体蚀刻氮化物和氧化物层是通过不同工艺制程的蚀刻来调节的。在其中蚀刻剂的分压低于其蒸汽压力的吸附方案中实现了对氮化硅的高蚀刻选择性。在其中腐蚀剂的分压高于其蒸汽压力的冷凝方案中实现对氮化硅的低蚀刻选择性。通过控制蚀刻剂的分压，可以实现对氮化硅的非常高的蚀刻选择性。

9. 发明授权

US07977249B1 Methods for removing silicon nitride and other materials during fabrication of contacts 有权
标题翻译：在触点制造过程中去除氮化硅和其他材料的方法
公开(公告)号：US07977249B1
公开(公告)日：2011-07-12
申请号：US12074912
申请日：2008-03-07
申请人： Xinye Liu , Yu Yang , Chiukin Steven Lai
发明人： Xinye Liu , Yu Yang , Chiukin Steven Lai
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/31111 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76834
摘要： Methods for removing silicon nitride and elemental silicon during contact preclean process involve converting these materials to materials that are more readily etched by fluoride-based etching methods, and subsequently removing the converted materials by a fluoride-based etch. Specifically, silicon nitride and elemental silicon may be treated with an oxidizing agent, e.g., with an oxygen-containing gas in a plasma, or with O2 or O3 in the absence of plasma to produce a material that is more rich in Si—O bonds and is more easily etched with a fluoride-based etch. Alternatively, silicon nitride or elemental silicon may be doped with a number of doping elements, e.g., hydrogen, to form materials which are more easily etched by fluoride based etches. The methods are particularly useful for pre-cleaning contact vias residing in a layer of silicon oxide based material because they minimize the unwanted increase of critical dimension of contact vias.
摘要翻译：在接触预清洗过程中去除氮化硅和元素硅的方法包括将这些材料转化为通过基于氟化物的蚀刻方法更容易蚀刻的材料，并且随后通过基于氟化物的蚀刻除去转化的材料。具体地说，氮化硅和元素硅可以用氧化剂处理，例如在等离子体中含有氧的气体，或者在没有等离子体的情况下用O 2或O 3处理，以产生更富含Si-O键的材料并且更容易用基于氟化物的蚀刻蚀刻。或者，氮化硅或元素硅可以掺杂多个掺杂元素，例如氢，以形成更容易被基于氟化物的蚀刻蚀刻的材料。这些方法对于预清洁驻留在氧化硅基材料层中的接触通孔特别有用，因为它们使接触通孔的临界尺寸的不期望的增加最小化。

10. 发明申请

US20050205110A1 Method for front end of line fabrication 有权
标题翻译：前端制造方法
公开(公告)号：US20050205110A1
公开(公告)日：2005-09-22
申请号：US11137609
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
IPC分类号： H01L21/28 , C23C16/455 , C23F1/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/8238 , H01L23/12 , H01L23/52 , C25F1/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在至少一个实施例中，该方法包括将基板表面支撑在真空室中，并从室内的气体混合物产生反应物质。然后将衬底表面在腔室内冷却，并且反应物质被引导到冷却的衬底表面以与其上的天然氧化物反应并在衬底表面上形成膜。然后将衬底表面在室内加热以使膜蒸发。

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