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    • 4. 发明授权
    • Three-dimensional surround scanning device and method thereof
    • 三维环绕扫描装置及其方法
    • US08013983B2
    • 2011-09-06
    • US12210301
    • 2008-09-15
    • Tzung-Han LinChia-Chen ChenPo-Hung WangShih-Pin Chao
    • Tzung-Han LinChia-Chen ChenPo-Hung WangShih-Pin Chao
    • G01C3/08
    • G01S17/89G01C15/002G01S7/4817
    • A three-dimensional surround scanning device and a method thereof are described, which are adopted to perform surround scanning on a scene area, so as to construct a three-dimensional model. The device includes an image acquisition element, a first moving mechanism, a range acquisition element, and a controller. The controller controls the image acquisition element, the range acquisition element, and the first moving mechanism to perform three-dimensional image acquisition, so as to obtain a two-dimensional image covering the scene area, depth information with three-dimensional coordinates, and corresponding position signals. The controller rearranges and combines the two-dimensional image, position signals, and depth information, so as to construct the three-dimensional model.
    • 描述了三维环绕扫描装置及其方法,其用于在场景区域上执行环绕扫描,以构建三维模型。 该装置包括图像获取元件,第一移动机构,范围获取元件和控制器。 控制器控制图像获取元件,范围获取元件和第一移动机构以执行三维图像采集,以获得覆盖场景区域的二维图像,具有三维坐标的深度信息,以及对应的 位置信号。 控制器重新组合二维图像,位置信号和深度信息,构建三维模型。
    • 5. 发明申请
    • METHOD OF FORMING A PATTERN OF AN ARRAY OF SHAPES INCLUDING A BLOCKED REGION
    • 形成包括封闭区域的图形阵列的图案的方法
    • US20100272967A1
    • 2010-10-28
    • US12430919
    • 2009-04-28
    • Chia-Chen ChenWu-Song HuangWai-Kin LiChandrasekhar Sarma
    • Chia-Chen ChenWu-Song HuangWai-Kin LiChandrasekhar Sarma
    • G03F7/20B32B3/10
    • G03F7/70466G03F1/70G03F7/095G03F7/203Y10T428/24802
    • A second photoresist having a second photosensitivity is formed on a substrate. A first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on the second photoresist. Preferably, the first photoresist is a gray resist that becomes transparent upon exposure. At least one portion of the first photoresist is lithographically exposed employing a first reticle having a first pattern to form at least one transparent lithographically exposed resist portion, while the second photoresist remains intact. The second photoresist is lithographically exposed employing a second reticle including a second pattern to form a plurality of lithographically exposed shapes in the second photoresist. The plurality of lithographically exposed shapes have a composite pattern which is the derived from the second pattern by limiting the second pattern only within the area of the at least one transparent lithographically exposed resist pattern.
    • 在基板上形成具有第二光敏性的第二光致抗蚀剂。 在第二光致抗蚀剂上形成具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。 优选地,第一光致抗蚀剂是在曝光时变得透明的灰色抗蚀剂。 使用具有第一图案的第一掩模版将第一光致抗蚀剂的至少一部分光刻曝光以形成至少一个透明的光刻曝光的抗蚀剂部分,而第二光致抗蚀剂保持完整。 使用包括第二图案的第二掩模版将第二光致抗蚀剂光刻曝光,以在第二光致抗蚀剂中形成多个光刻曝光的形状。 多个光刻曝光的形状具有通过仅在至少一个透明光刻曝光的抗蚀剂图案的区域内限制第二图案而从第二图案导出的复合图案。