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1. 发明授权

US06518133B1 Method for fabricating a small dimensional gate with elevated source/drain structures 有权
标题翻译：用于制造具有升高的源极/漏极结构的小尺寸栅极的方法
公开(公告)号：US06518133B1
公开(公告)日：2003-02-11
申请号：US10128967
申请日：2002-04-24
申请人： Alex See , Yeow Kheng Lim , Cher Liang Randall Cha
发明人： Alex See , Yeow Kheng Lim , Cher Liang Randall Cha
IPC分类号： H01L21336
CPC分类号： H01L21/76897 , H01L21/28052 , H01L21/76877 , H01L29/42376 , H01L29/6653 , H01L29/66553 , H01L29/6659 , H01L29/7833
摘要： A method of manufacturing a transistor with a small self aligned gate and self aligned elevated source/drain regions. A first insulating layer is formed over a substrate. A first opening is formed in the first insulating layer to expose the substrate. We form a gate dielectric layer over the substrate in the first opening. Next, first spacers are formed on the sidewalls of the first insulating layer. A gate layer is formed over the first insulating layer, the first spacers, and the gate dielectric layer. We planarize the gate layer to form a gate electrode. The first spacers are removed to form LDD openings. Next, we form lightly doped source/drain regions in the substrate in the LDD openings. Subsequently, second spacers are formed on the sidewalls of the first insulating layer and on the sidewalls of the gate electrode to form S/D openings. Source/drain regions are formed in the substrate in the S/D openings. Next, we form a conductive layer over the substrate at least partially filling the S/D openings. The conductive layer is planarized to form elevated source/drain structures.
摘要翻译：一种制造具有小的自对准栅极和自对准升高的源极/漏极区域的晶体管的方法。第一绝缘层形成在衬底上。在第一绝缘层中形成第一开口以露出衬底。我们在第一开口中在衬底上形成栅介质层。接下来，在第一绝缘层的侧壁上形成第一间隔物。在第一绝缘层，第一间隔物和栅极电介质层上形成栅极层。我们平面化栅极层以形成栅电极。去除第一间隔物以形成LDD开口。接下来，我们在LDD开口中的衬底中形成轻掺杂的源极/漏极区域。随后，在第一绝缘层的侧壁和栅电极的侧壁上形成第二间隔物以形成S / D开口。源极/漏极区域形成在S / D开口中的衬底中。接下来，我们在衬底上形成至少部分填充S / D开口的导电层。导电层被平坦化以形成升高的源极/漏极结构。

2. 发明授权

US06492242B1 Method of forming of high K metallic dielectric layer 失效
标题翻译：形成高K金属介电层的方法
公开(公告)号：US06492242B1
公开(公告)日：2002-12-10
申请号：US09609447
申请日：2000-07-03
申请人： Alex See , Cher Liang Randall Cha , Shyuz Fong Quek , Ting Cheong Ang , Wye Boon Loh , Sang Yee Loong , Jun Song , Chua Chee Tee
发明人： Alex See , Cher Liang Randall Cha , Shyuz Fong Quek , Ting Cheong Ang , Wye Boon Loh , Sang Yee Loong , Jun Song , Chua Chee Tee
IPC分类号： H01L2120
CPC分类号： H01L28/40 , H01L21/31683
摘要： A process for forming a high dielectric constant, (High K), layer, for a metal-oxide-metal, capacitor structure, featuring localized oxidation of an underlying metal layer, performed at a temperature higher than the temperature experienced by surrounding structures, has been developed. A first iteration of this process features the use of a laser ablation procedure, performed to a local region of an underlying metal layer, in an oxidizing ambient. The laser ablation procedure creates the desired, high temperature, only at the laser spot, allowing a high K layer to be created at this temperature, while the surrounding structures on a semiconductor substrate, not directly exposed to the laser ablation procedure remain at lower temperatures. A second iteration features the exposure of specific regions of an underlying metal layer, to a UV, or to an I line exposure procedure, performed in an oxidizing ambient, with the regions of an underlying metal layer exposed to the UV or I line procedure, via clear regions in an overlying photolithographic plate. This procedure also results in the formation of a high K layer, on a top portion of the underlying metal layer.
摘要翻译：在高于周围结构所经历的温度的温度下进行的金属氧化物 - 金属电容器结构的高介电常数（高K）层，其特征在于底层金属层的局部氧化，已经开发该方法的第一次迭代的特征在于在氧化环境中使用对底层金属层的局部区域进行的激光烧蚀程序。激光烧蚀过程仅在激光点产生所需的高温，允许在该温度下产生高K层，而不直接暴露于激光烧蚀过程的半导体衬底上的周围结构保持在较低温度。第二次迭代的特征在于在氧化环境中进行的底层金属层的特定区域到UV或I线曝光程序，暴露于UV或I线程序的下面的金属层的区域，通过覆盖光刻板中的透明区域。该过程还导致在下面的金属层的顶部上形成高K层。

3. 发明授权

US6064201A Method and apparatus to image metallic patches embedded in a non-metal surface 失效
标题翻译：对嵌入非金属表面的金属贴片进行成像的方法和装置
公开(公告)号：US6064201A
公开(公告)日：2000-05-16
申请号：US114125
申请日：1998-07-13
申请人： Cher Liang Randall Cha , Hao Gong , Eng Fong Chor , Lap Chan
发明人： Cher Liang Randall Cha , Hao Gong , Eng Fong Chor , Lap Chan
IPC分类号： G01R33/038 , G01N27/90 , G01R31/00 , G01R33/00 , G01R33/12 , G01V3/00
CPC分类号： G01Q60/54 , B82Y35/00 , G01Q60/56 , G01R33/0385 , B82Y25/00 , Y10S977/852 , Y10S977/879
摘要： Small metallic patches embedded in a mainly non-metallic surface may be detected and mapped by placing a wire coil at the free end of a cantilever, with a fine tip made of a ferro-magnetic material located at its center. An alternating current is passed through the coil so that when it is near a metallic patch eddy currents are induced in the patch. These produce a small magnetic moment in the patch which pulls the tip towards the surface. This movement of the tip is detected by observing a light beam that is reflected off the surface of the cantilever. By plotting the output of a photodetector, sensistive to small changes in the reflected beam's position, as a function of the tip's location over the surface, a map of the metallic patches is produced.
摘要翻译：通过将线圈放置在悬臂的自由端，可以通过将位于其中心的铁磁性材料制成的细小尖端放置在主要非金属表面上的小金属贴片。交流电流通过线圈，使得当其接近金属贴片时，在贴片中引起涡流。这些在贴片中产生小的磁矩，将尖端朝向表面拉动。通过观察从悬臂表面反射的光束来检测尖端的这种移动。通过绘制光电检测器的输出，对反射光束位置的小变化敏感，作为尖端在表面上的位置的函数，产生了金属贴图。

4. 发明授权

US06764914B2 Method of forming a high K metallic dielectric layer 有权
标题翻译：形成高K金属介电层的方法
公开(公告)号：US06764914B2
公开(公告)日：2004-07-20
申请号：US10290130
申请日：2002-11-07
申请人： Alex See , Cher Liang Randall Cha , Shyue Fong Quek , Ting Cheong Ang , Wye Boon Loh , Sang Yee Loong , Jun Song , Chua Chee Tee
发明人： Alex See , Cher Liang Randall Cha , Shyue Fong Quek , Ting Cheong Ang , Wye Boon Loh , Sang Yee Loong , Jun Song , Chua Chee Tee
IPC分类号： H01L2120
CPC分类号： H01L28/40 , H01L21/31683
摘要： A process for forming a high dielectric constant, (High K), layer, for a metal-oxide-metal, capacitor structure, featuring localized oxidation of an underlying metal layer, performed at a temperature higher than the temperature experienced by surrounding structures, has been developed. A first iteration of this process features the use of a laser ablation procedure, performed to a local region of an underlying metal layer, in an oxidizing ambient. The laser ablation procedure creates the desired, high temperature, only at the laser spot, allowing a high K layer to be created at this temperature, while the surrounding structures on a semiconductor substrate, not directly exposed to the laser ablation procedure remain at lower temperatures. A second iteration features the exposure of specific regions of an underlying metal layer, to a UV, or to an I line exposure procedure, performed in an oxidizing ambient, with the regions of an underlying metal layer exposed to the UV or I line procedure, via clear regions in an overlying photolithographic plate. This procedure also results in the formation of a high K layer, on a top portion of the underlying metal layer.
摘要翻译：在高于周围结构所经历的温度的温度下进行的金属氧化物 - 金属电容器结构的高介电常数（高K）层，其特征在于底层金属层的局部氧化，已经开发该方法的第一次迭代的特征在于在氧化环境中使用对底层金属层的局部区域进行的激光烧蚀程序。激光烧蚀过程仅在激光点产生所需的高温，允许在该温度下产生高K层，而不直接暴露于激光烧蚀过程的半导体衬底上的周围结构保持在较低温度。第二次迭代的特征在于在氧化环境中进行的底层金属层的特定区域到UV或I线曝光程序，暴露于UV或I线程序的下面的金属层的区域，通过覆盖光刻板中的透明区域。该过程还导致在下面的金属层的顶部上形成高K层。

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