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1. 发明授权

US06492242B1 Method of forming of high K metallic dielectric layer 失效
标题翻译：形成高K金属介电层的方法
公开(公告)号：US06492242B1
公开(公告)日：2002-12-10
申请号：US09609447
申请日：2000-07-03
申请人： Alex See , Cher Liang Randall Cha , Shyuz Fong Quek , Ting Cheong Ang , Wye Boon Loh , Sang Yee Loong , Jun Song , Chua Chee Tee
发明人： Alex See , Cher Liang Randall Cha , Shyuz Fong Quek , Ting Cheong Ang , Wye Boon Loh , Sang Yee Loong , Jun Song , Chua Chee Tee
IPC分类号： H01L2120
CPC分类号： H01L28/40 , H01L21/31683
摘要： A process for forming a high dielectric constant, (High K), layer, for a metal-oxide-metal, capacitor structure, featuring localized oxidation of an underlying metal layer, performed at a temperature higher than the temperature experienced by surrounding structures, has been developed. A first iteration of this process features the use of a laser ablation procedure, performed to a local region of an underlying metal layer, in an oxidizing ambient. The laser ablation procedure creates the desired, high temperature, only at the laser spot, allowing a high K layer to be created at this temperature, while the surrounding structures on a semiconductor substrate, not directly exposed to the laser ablation procedure remain at lower temperatures. A second iteration features the exposure of specific regions of an underlying metal layer, to a UV, or to an I line exposure procedure, performed in an oxidizing ambient, with the regions of an underlying metal layer exposed to the UV or I line procedure, via clear regions in an overlying photolithographic plate. This procedure also results in the formation of a high K layer, on a top portion of the underlying metal layer.
摘要翻译：在高于周围结构所经历的温度的温度下进行的金属氧化物 - 金属电容器结构的高介电常数（高K）层，其特征在于底层金属层的局部氧化，已经开发该方法的第一次迭代的特征在于在氧化环境中使用对底层金属层的局部区域进行的激光烧蚀程序。激光烧蚀过程仅在激光点产生所需的高温，允许在该温度下产生高K层，而不直接暴露于激光烧蚀过程的半导体衬底上的周围结构保持在较低温度。第二次迭代的特征在于在氧化环境中进行的底层金属层的特定区域到UV或I线曝光程序，暴露于UV或I线程序的下面的金属层的区域，通过覆盖光刻板中的透明区域。该过程还导致在下面的金属层的顶部上形成高K层。

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