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1. 发明授权

US08822287B2 Methods of manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08822287B2
公开(公告)日：2014-09-02
申请号：US13313754
申请日：2011-12-07
申请人： Hyo-Jung Kim , Ki-hyun Hwang , Kyung-Hyun Kim , Han-Mei Choi , Dong-Chul Yoo , Chan-Jin Park , Jong-Heun Lim , Myung-Jung Pyo , Byoung-Moon Yoon , Chang-Sup Mun
发明人： Hyo-Jung Kim , Ki-hyun Hwang , Kyung-Hyun Kim , Han-Mei Choi , Dong-Chul Yoo , Chan-Jin Park , Jong-Heun Lim , Myung-Jung Pyo , Byoung-Moon Yoon , Chang-Sup Mun
IPC分类号： H01L21/336
CPC分类号： H01L21/31053 , H01L21/3212 , H01L27/11573 , H01L27/11575 , H01L27/11582
摘要： Methods of manufacturing semiconductor devices include forming an integrated structure and a first stopping layer pattern in a first region. A first insulating interlayer and a second stopping layer are formed. A second preliminary insulating interlayer is formed by partially etching the second stopping layer and the first insulating interlayer in the first region. A first polishing is performed to remove a protruding portion. A second polishing is performed to expose the first and second stopping layer patterns.
摘要翻译：制造半导体器件的方法包括在第一区域中形成集成结构和第一停止层图案。形成第一绝缘层和第二阻挡层。通过部分蚀刻第一区域中的第二阻挡层和第一绝缘中间层来形成第二初步绝缘中间层。执行第一次抛光以去除突出部分。执行第二抛光以暴露第一和第二停止层图案。

2. 发明申请

US20120149185A1 Methods Of Manufacturing Semiconductor Devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120149185A1
公开(公告)日：2012-06-14
申请号：US13313754
申请日：2011-12-07
申请人： Hyo-Jung Kim , Ki-Hyun Hwang , Kyung-Hyun Kim , Han-Mei Choi , Dong-Chul Yoo , Chan-Jin Park , Jong-Heun Lim , Myung-Jung Pyo , Byoung-Moon Yoon , Chang-Sup Mun
发明人： Hyo-Jung Kim , Ki-Hyun Hwang , Kyung-Hyun Kim , Han-Mei Choi , Dong-Chul Yoo , Chan-Jin Park , Jong-Heun Lim , Myung-Jung Pyo , Byoung-Moon Yoon , Chang-Sup Mun
IPC分类号： H01L21/3205 , H01L21/311
CPC分类号： H01L21/31053 , H01L21/3212 , H01L27/11573 , H01L27/11575 , H01L27/11582
摘要： Methods of manufacturing semiconductor devices include forming an integrated structure and a first stopping layer pattern in a first region. A first insulating interlayer and a second stopping layer are formed. A second preliminary insulating interlayer is formed by partially etching the second stopping layer and the first insulating interlayer in the first region. A first polishing is performed to remove a protruding portion. A second polishing is performed to expose the first and second stopping layer patterns.
摘要翻译：制造半导体器件的方法包括在第一区域中形成集成结构和第一停止层图案。形成第一绝缘层和第二阻挡层。通过部分蚀刻第一区域中的第二阻挡层和第一绝缘中间层来形成第二初步绝缘中间层。执行第一次抛光以去除突出部分。执行第二抛光以暴露第一和第二停止层图案。

3. 发明授权

US08058180B2 Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture 失效
标题翻译：使用氨和过氧化物混合物的稀水溶液制造半导体器件的方法
公开(公告)号：US08058180B2
公开(公告)日：2011-11-15
申请号：US12032048
申请日：2008-02-15
申请人： Doo-Won Kwon , Hyung-Ho Ko , Chang-Sup Mun , Woo-Gwan Shim , Im-Soo Park , Yu-Kyung Kim , Jeong-Nam Han
发明人： Doo-Won Kwon , Hyung-Ho Ko , Chang-Sup Mun , Woo-Gwan Shim , Im-Soo Park , Yu-Kyung Kim , Jeong-Nam Han
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02052
摘要： This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.
摘要翻译：本发明提供制造半导体器件的方法，其中在半导体衬底上形成合金层以形成衬底结构，该方法包括使用稀氨水溶液和过氧化物混合物（APM）进行清洗和/或湿蚀刻处理步骤在衬底结构上。

4. 发明授权

US07309683B2 Cleaning composition and method of cleaning a semiconductor device using the same 有权
标题翻译：使用该半导体器件的清洁组合物和清洁半导体器件的方法
公开(公告)号：US07309683B2
公开(公告)日：2007-12-18
申请号：US11038585
申请日：2005-01-19
申请人： Chang-Sup Mun , Chang-Ki Hong , Sang-Jun Choi , Woo-Sung Han
发明人： Chang-Sup Mun , Chang-Ki Hong , Sang-Jun Choi , Woo-Sung Han
IPC分类号： C11D1/12
CPC分类号： H01L21/02071 , C11D1/146 , C11D3/0073 , C11D3/2031 , C11D3/2055 , C11D3/3409 , C11D3/3427 , C11D11/0047
摘要： A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO3—HA+ wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.
摘要翻译：清洁组合物包含碱溶液，纯水和由以下化学式表示的表面活性剂：其中R 1是选自下列化学式的一种：由丁基，异丁基，异辛基，壬基苯基，辛基苯基，癸基，十三烷基，月桂基，肉豆蔻基，鲸蜡基，硬脂基，油基基团，丙烯酰基和苯丙基，A是选自氨，乙醇胺，二乙醇胺和三乙醇胺中的一种。

5. 发明申请

US20070020841A1 Method of manufacturing gate structure and method of manufacturing semiconductor device including the same 审中-公开
标题翻译：制造栅极结构的方法和制造其的半导体器件的制造方法
公开(公告)号：US20070020841A1
公开(公告)日：2007-01-25
申请号：US11490154
申请日：2006-07-21
申请人： Ki-Hyun Hwang , Won-Jun Jang , Jae-Young Ahn , Chang-Sup Mun , Jung-Hyun Park
发明人： Ki-Hyun Hwang , Won-Jun Jang , Jae-Young Ahn , Chang-Sup Mun , Jung-Hyun Park
IPC分类号： H01L21/8238
CPC分类号： B82Y10/00 , H01L21/823425 , H01L21/823462 , H01L27/115 , H01L27/11521
摘要： In a method for manufacturing a semiconductor device, a silicon oxide layer is formed on a substrate. The silicon oxide layer is treated with a solution comprising ozone. Then, a conductive layer is formed on the silicon oxide layer treated with the solution.
摘要翻译：在半导体装置的制造方法中，在基板上形成氧化硅层。氧化硅层用包含臭氧的溶液处理。然后，在用该溶液处理的氧化硅层上形成导电层。

6. 发明授权

US08580648B2 Capacitor having an electrode structure, method of manufacturing a capacitor having an electrode structure and semiconductor device having an electrode structure 有权
标题翻译：具有电极结构的电容器，具有电极结构的电容器的制造方法以及具有电极结构的半导体器件
公开(公告)号：US08580648B2
公开(公告)日：2013-11-12
申请号：US13035342
申请日：2011-02-25
申请人： Suk-Hun Choi , Kyung-Hyun Kim , Chang-Sup Mun , Sung-Jun Kim , Jin-I Lee
发明人： Suk-Hun Choi , Kyung-Hyun Kim , Chang-Sup Mun , Sung-Jun Kim , Jin-I Lee
IPC分类号： H01L29/92
CPC分类号： H01L27/10852 , H01G4/33 , H01L27/10894 , H01L28/91
摘要： A capacitor includes an object or a substrate including an insulation layer having an opening, an electrode structure having conductive patterns, a dielectric layer and an upper electrode. The electrode structure may have a first conductive pattern including metal and a second conductive pattern including metal oxide generated from the first conductive pattern. The first conductive pattern may fill the opening and may protrude over the insulation layer. The second conductive pattern may extend from the first conductive pattern. The electrode structure may additionally include a third conductive pattern disposed on the second conductive pattern. The capacitor including the electrode structure may ensure improved structural stability and electrical characteristics.
摘要翻译：电容器包括具有开口的绝缘层，具有导电图案的电极结构，电介质层和上部电极的物体或基板。电极结构可以具有包括金属的第一导电图案和包括从第一导电图案产生的金属氧化物的第二导电图案。第一导电图案可以填充开口并且可以突出在绝缘层上。第二导电图案可以从第一导电图案延伸。电极结构可以另外包括设置在第二导电图案上的第三导电图案。包括电极结构的电容器可以确保改进的结构稳定性和电特性。

7. 发明申请

US20120108048A1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：三维半导体器件及其制造方法
公开(公告)号：US20120108048A1
公开(公告)日：2012-05-03
申请号：US13286384
申请日：2011-11-01
申请人： Jong Heun Lim , Jae Joo Shim , Hyo Jung Kim , Kyung Hyun Kim , Chang Sup Mun
发明人： Jong Heun Lim , Jae Joo Shim , Hyo Jung Kim , Kyung Hyun Kim , Chang Sup Mun
IPC分类号： H01L21/28
CPC分类号： H01L21/28 , H01L27/11529 , H01L27/11548 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11575 , H01L27/11582
摘要： A method of fabricating a three-dimensional semiconductor memory device includes providing a substrate which includes a cell array region and a peripheral region. The method further includes a peripheral structure on the peripheral region of the substrate, where the peripheral structure includes peripheral circuits and is configured to expose the cell array region of the substrate. The method further includes forming a lower cell structure on the cell array region of the substrate, forming an insulating layer to cover the peripheral structure and the lower cell structure on the substrate, planarizing the insulating layer using top surfaces of the peripheral structure and the lower cell structure as a planarization stop layer, and forming an upper cell structure on the lower cell structure.
摘要翻译：一种制造三维半导体存储器件的方法包括提供包括单元阵列区域和周边区域的衬底。该方法还包括在基板的外围区域上的周边结构，其中外围结构包括外围电路并且被配置为暴露基板的单元阵列区域。该方法还包括在基板的单元阵列区域上形成下单元结构，形成绝缘层以覆盖基板上的外围结构和下单元结构，使用外围结构的顶表面和下层单元平面化绝缘层电池结构作为平坦化停止层，并在下电池结构上形成上电池结构。

8. 发明申请

US20110204427A1 CAPACITOR HAVING AN ELECTRODE STRUCTURE, METHOD OF MANUFACTURING A CAPACITOR HAVING AN ELECTRODE STRUCTURE AND SEMICONDUCTOR DEVICE HAVING AN ELECTRODE STRUCTURE 有权
标题翻译：具有电极结构的电容器，具有电极结构的电容器的制造方法和具有电极结构的半导体器件
公开(公告)号：US20110204427A1
公开(公告)日：2011-08-25
申请号：US13035342
申请日：2011-02-25
申请人： Suk-Hun CHOI , Kyung-Hyun KIM , Chang-Sup MUN , Sung-Jun KIM , Jin-I LEE
发明人： Suk-Hun CHOI , Kyung-Hyun KIM , Chang-Sup MUN , Sung-Jun KIM , Jin-I LEE
IPC分类号： H01L29/772 , H01G4/06 , H01G7/00
CPC分类号： H01L27/10852 , H01G4/33 , H01L27/10894 , H01L28/91
摘要： A capacitor includes an object or a substrate including an insulation layer having an opening, an electrode structure having conductive patterns, a dielectric layer and an upper electrode. The electrode structure may have a first conductive pattern including metal and a second conductive pattern including metal oxide generated from the first conductive pattern. The first conductive pattern may fill the opening and may protrude over the insulation layer. The second conductive pattern may extend from the first conductive pattern. The electrode structure may additionally include a third conductive pattern disposed on the second conductive pattern. The capacitor including the electrode structure may ensure improved structural stability and electrical characteristics.
摘要翻译：电容器包括具有开口的绝缘层，具有导电图案的电极结构，电介质层和上部电极的物体或基板。电极结构可以具有包括金属的第一导电图案和包括从第一导电图案产生的金属氧化物的第二导电图案。第一导电图案可以填充开口并且可以突出在绝缘层上。第二导电图案可以从第一导电图案延伸。电极结构可以另外包括设置在第二导电图案上的第三导电图案。包括电极结构的电容器可以确保改进的结构稳定性和电特性。

9. 发明申请

US20070072431A1 Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device 有权
标题翻译：用于清洁具有暴露的硅和锗锗层的衬底的方法和用于制造半导体器件的相关方法
公开(公告)号：US20070072431A1
公开(公告)日：2007-03-29
申请号：US11527473
申请日：2006-09-27
申请人： Chang-Sup Mun , Woo-Gwan Shim , Han-Ku Cho , Chang-Ki Hong , Doo-Won Kwon
发明人： Chang-Sup Mun , Woo-Gwan Shim , Han-Ku Cho , Chang-Ki Hong , Doo-Won Kwon
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02057 , H01L21/02082
摘要： A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), and deionized water (H2O), and the second cleaning solution comprises at least 200 times more deionized water (H2O) than ammonium hydroxide (NH4OH) by volume.
摘要翻译：公开了一种用于清洁其上形成和暴露硅层和硅锗层的衬底的方法，以及使用该清洁方法制造半导体器件的方法。该清洗方法包括：制备半导体衬底，在其上形成和暴露硅层和硅锗层; 以及执行使用第一清洁溶液从半导体衬底去除自然氧化物层的第一清洁子过程。清洁方法还包括在执行第一清洁子过程之后在半导体衬底上执行第二清洁子处理，其中第二清洁子处理包括使用第二清洁溶液。此外，第二清洗溶液包括氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2）和去离子水（ H 2 O），并且第二清洁溶液包含比氢氧化铵（NH 4 O 2）少至少200倍的去离子水（H 2 O 2 O） OH）。

10. 发明授权

US08592269B2 Method of manufacturing gate structure and method of manufacturing semiconductor device including the same 有权
标题翻译：制造栅极结构的方法和制造其的半导体器件的制造方法
公开(公告)号：US08592269B2
公开(公告)日：2013-11-26
申请号：US12942107
申请日：2010-11-09
申请人： Ki-Hyun Hwang , Won-Jun Jang , Jae-Young Ahn , Chang-Sup Mun , Jung-Hyun Park
发明人： Ki-Hyun Hwang , Won-Jun Jang , Jae-Young Ahn , Chang-Sup Mun , Jung-Hyun Park
IPC分类号： H01L21/8238
CPC分类号： B82Y10/00 , H01L21/823425 , H01L21/823462 , H01L27/115 , H01L27/11521
摘要： In a method for manufacturing a semiconductor device, a silicon oxide layer is formed on a substrate. The silicon oxide layer is treated with a solution comprising ozone. Then, a conductive layer is formed on the silicon oxide layer treated with the solution.
摘要翻译：在半导体装置的制造方法中，在基板上形成氧化硅层。氧化硅层用包含臭氧的溶液处理。然后，在用该溶液处理的氧化硅层上形成导电层。

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