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    • 7. 发明申请
    • THIN-FILM TRANSISTOR STRUCTURE, AS WELL AS THIN-FILM TRANSISTOR AND DISPLAY DEVICE EACH HAVING SAID STRUCTURE
    • 薄膜晶体管结构,如薄膜晶体管和每个具有结构的显示器件
    • US20140319512A1
    • 2014-10-30
    • US14113322
    • 2012-04-19
    • Takeaki MaedaToshihiro KugimiyaJun Ho SongJe Hun LeeByung Du AhnGun Hee Kim
    • Takeaki MaedaToshihiro KugimiyaJun Ho SongJe Hun LeeByung Du AhnGun Hee Kim
    • H01L29/786H01L27/12
    • H01L29/7869G02F1/1368H01L27/1222H01L29/78693
    • There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays and liquid crystal displays. The thin-film transistor structure of the present invention at least having, on a substrate, an oxide semiconductor layer, a source-drain electrode, and a passivation layer in order from the substrate side, wherein the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer has a Zn content of 50 atomic % or more as a percentage of all metal elements contained therein, and the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side; the second oxide semiconductor layer contains Sn and at least one element selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer.
    • 提供了一种氧化物半导体层,当在有机EL显示器和液晶显示器等显示装置中沉积钝化层等时,能够使薄膜晶体管的电特性稳定,而不需要氧化处理层。 本发明的薄膜晶体管结构至少在衬底上具有氧化物半导体层,源 - 漏电极和钝化层,从衬底侧开始,其中氧化物半导体层是 第一氧化物半导体层和第二氧化物半导体层; 第一氧化物半导体层的Zn含量占所有金属元素的百分比为50原子%以上,第一氧化物半导体层形成在源 - 漏电极和钝化层侧; 所述第二氧化物半导体层含有Sn和选自In,Ga和Zn中的至少一种元素,并且所述第二氧化物半导体层形成在所述基板侧; 并且第一氧化物半导体层与源 - 漏电极和钝化层直接接触。