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1. 发明授权

US08581316B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US08581316B2
公开(公告)日：2013-11-12
申请号：US13409261
申请日：2012-03-01
申请人： Ayako Inoue , Kazuhiro Tsumura
发明人： Ayako Inoue , Kazuhiro Tsumura
IPC分类号： H01L27/108
CPC分类号： H01L27/0629
摘要： Provided is a semiconductor device including, on the same semiconductor substrate, a transistor element, a capacitor, and a resistor. The capacitor is formed on an active region, and the resistor is formed on an element isolation region, both formed of the same polysilicon film. By CMP or etch-back, the surface is ground down while planarizing the surface until a resistor has a desired thickness. Owing to a difference in height between the active region and the element isolation region, a thin resistor and a thick upper electrode of the capacitor are formed to prevent passing through of a contact.

2. 发明申请

US20120228686A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120228686A1
公开(公告)日：2012-09-13
申请号：US13409261
申请日：2012-03-01
申请人： Ayako INOUE , Kazuhiro Tsumura
发明人： Ayako INOUE , Kazuhiro Tsumura
IPC分类号： H01L27/06 , H01L21/336
CPC分类号： H01L27/0629
摘要： Provided is a semiconductor device including, on the same semiconductor substrate, a transistor element, a capacitor, and a resistor. The capacitor is formed on an active region, and the resistor is formed on an element isolation region, both formed of the same polysilicon film. By CMP or etch-back, the surface is ground down while planarizing the surface until a resistor has a desired thickness. Owing to a difference in height between the active region and the element isolation region, a thin resistor and a thick upper electrode of the capacitor are formed to prevent passing through of a contact.
摘要翻译：提供了一种在同一半导体衬底上包括晶体管元件，电容器和电阻器的半导体器件。电容器形成在有源区上，并且电阻器形成在由相同的多晶硅膜形成的元件隔离区上。通过CMP或回蚀刻，使表面平坦化，直到电阻器具有期望的厚度。由于有源区域和元件隔离区域之间的高度差异，形成电阻器的薄电阻器和厚上电极以防止接触件通过。

3. 发明申请

US20120280359A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120280359A1
公开(公告)日：2012-11-08
申请号：US13552172
申请日：2012-07-18
申请人： Ayako INOUE , Naoto SAITOH
发明人： Ayako INOUE , Naoto SAITOH
IPC分类号： H01L29/92
CPC分类号： H01L29/945 , H01L29/66181
摘要： Provided is a semiconductor capacitor including: a capacitor device forming region having a trapezoidal trench which is formed on a surface of a first conductivity type semiconductor substrate; a second conductivity type lower electrode layer provided along the trapezoidal trenches of the capacitor device forming region; a capacitor insulating film formed at least on a surface of the second conductivity type lower electrode layer; and a second conductivity type upper electrode formed on a surface of the capacitor insulating film.
摘要翻译：提供一种半导体电容器，包括：形成在第一导电型半导体衬底的表面上的具有梯形沟槽的电容器器件形成区域; 沿着电容器器件形成区域的梯形沟槽设置的第二导电型下电极层; 至少形成在所述第二导电型下电极层的表面上的电容器绝缘膜; 以及形成在电容器绝缘膜的表面上的第二导电型上电极。

4. 发明授权

US08247303B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08247303B2
公开(公告)日：2012-08-21
申请号：US13070267
申请日：2011-03-23
申请人： Ayako Inoue , Naoto Saitoh
发明人： Ayako Inoue , Naoto Saitoh
IPC分类号： H01L21/20
CPC分类号： H01L29/945 , H01L29/66181
摘要： Provided is a semiconductor capacitor including: a capacitor device forming region having a trapezoidal trench which is formed on a surface of a first conductivity type semiconductor substrate; a second conductivity type lower electrode layer provided along the trapezoidal trenches of the capacitor device forming region; a capacitor insulating film formed at least on a surface of the second conductivity type lower electrode layer; and a second conductivity type upper electrode formed on a surface of the capacitor insulating film.
摘要翻译：提供一种半导体电容器，包括：形成在第一导电型半导体衬底的表面上的具有梯形沟槽的电容器器件形成区域; 沿着电容器器件形成区域的梯形沟槽设置的第二导电型下电极层; 至少形成在所述第二导电型下电极层的表面上的电容器绝缘膜; 以及形成在电容器绝缘膜的表面上的第二导电型上电极。

5. 发明申请

US20110233724A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233724A1
公开(公告)日：2011-09-29
申请号：US13070267
申请日：2011-03-23
申请人： Ayako Inoue , Naoto Saitoh
发明人： Ayako Inoue , Naoto Saitoh
IPC分类号： H01L29/02 , H01L21/02
CPC分类号： H01L29/945 , H01L29/66181
摘要： Provided is a semiconductor capacitor including: a capacitor device forming region having a trapezoidal trench which is formed on a surface of a first conductivity type semiconductor substrate; a second conductivity type lower electrode layer provided along the trapezoidal trenches of the capacitor device forming region; a capacitor insulating film formed at least on a surface of the second conductivity type lower electrode layer; and a second conductivity type upper electrode formed on a surface of the capacitor insulating film.
摘要翻译：提供一种半导体电容器，包括：形成在第一导电型半导体衬底的表面上的具有梯形沟槽的电容器器件形成区域; 沿着电容器器件形成区域的梯形沟槽设置的第二导电型下电极层; 至少形成在所述第二导电型下电极层的表面上的电容器绝缘膜; 以及形成在电容器绝缘膜的表面上的第二导电型上电极。

6. 发明申请

US20100219472A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100219472A1
公开(公告)日：2010-09-02
申请号：US12658825
申请日：2010-02-16
申请人： Ayako Inoue , Naoto Saitoh
发明人： Ayako Inoue , Naoto Saitoh
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0847 , H01L29/0649 , H01L29/1045 , H01L29/105 , H01L29/66568 , H01L29/7834
摘要： In a method of manufacturing a high withstanding voltage MOSFET, a region to be doped with impurities and a region to be doped with no impurity are provided when ion implantation of the impurities is performed in the channel forming region, for controlling a threshold voltage. The region to be doped with no impurity is suitably patterned so that impurity concentration of the channel forming region near boundaries between a well region and a source region and between the well region and a drain region having the same conductivity type as the well region may be increased, to thereby induce a reverse short channel effect. By canceling a short channel effect with the reverse short channel effect induced by the above-mentioned method, the short channel effect of the high withstanding voltage MOSFET may be suppressed.
摘要翻译：在制造耐高压MOSFET的方法中，当在沟道形成区域中进行杂质的离子注入时，提供要掺杂有杂质的区域和不掺杂的区域，用于控制阈值电压。掺杂没有杂质的区域被适当地图案化，使得在阱区域和源极区域之间以及阱区域和与阱区域具有相同导电类型的漏极区域之间的边界附近的沟道形成区域的杂质浓度可以是增加，从而引起反向短通道效应。通过利用由上述方法引起的反向短通道效应消除短通道效应，可以抑制高耐压电压MOSFET的短沟道效应。

7. 发明授权

US07667361B2 Electric motor and electronic apparatus 失效
标题翻译：电机及电子仪器
公开(公告)号：US07667361B2
公开(公告)日：2010-02-23
申请号：US11820932
申请日：2007-06-21
申请人： Tetsuya Nobe , Takayuki Satodate , Ayako Inoue , Akihiro Iino
发明人： Tetsuya Nobe , Takayuki Satodate , Ayako Inoue , Akihiro Iino
IPC分类号： H02K5/16
CPC分类号： H02K5/1672 , F16C35/02 , H02K7/083 , H02K21/145 , H02K37/14
摘要： An electric motor has a rotor having an end portion and a recessed portion formed at the end portion. A rotational shaft is mounted to the rotor. A stator covers an outer peripheral portion of the rotor and forms a magnetic field that generates a torque around the rotational shaft to thereby rotate the rotational shaft and the rotor. A bearing rotatably supports the rotational shaft and is entirely spaced-apart from the end portion of the rotor in an axial direction of the rotational shaft. A slider is slidably mounted around the rotational shaft and supports rotation of the rotational shaft about a rotational axis thereof. The slider is interposed between the bearing and the rotor so that a portion of the slider is entirely contained in the recessed portion of the rotor and the remaining portion of the slider is disposed in the space between the bearing and the rotor and in contact with the bearing.
摘要翻译：电动机具有在端部形成有端部和凹部的转子。旋转轴安装在转子上。定子覆盖转子的外周部分并形成围绕旋转轴产生转矩从而使旋转轴和转子旋转的磁场。轴承可旋转地支撑旋转轴，并且在旋转轴的轴向方向上与转子的端部完全间隔开。滑块可滑动地安装在旋转轴周围并且支撑旋转轴绕其旋转轴线旋转。滑块被插入在轴承和转子之间，使得滑块的一部分完全容纳在转子的凹部中，并且滑块的剩余部分设置在轴承和转子之间的空间中，并与滑块接触轴承。

8. 发明授权

US08710626B2 Semiconductor device having trapezoidal shaped trenches 有权
标题翻译：具有梯形沟槽的半导体器件
公开(公告)号：US08710626B2
公开(公告)日：2014-04-29
申请号：US13552172
申请日：2012-07-18
申请人： Ayako Inoue , Naoto Saitoh
发明人： Ayako Inoue , Naoto Saitoh
IPC分类号： H01L21/02
CPC分类号： H01L29/945 , H01L29/66181
摘要： Provided is a semiconductor capacitor including: a capacitor device forming region having a trapezoidal trench which is formed on a surface of a first conductivity type semiconductor substrate; a second conductivity type lower electrode layer provided along the trapezoidal trenches of the capacitor device forming region; a capacitor insulating film formed at least on a surface of the second conductivity type lower electrode layer; and a second conductivity type upper electrode formed on a surface of the capacitor insulating film.
摘要翻译：提供一种半导体电容器，包括：形成在第一导电型半导体衬底的表面上的具有梯形沟槽的电容器器件形成区域; 沿着电容器器件形成区域的梯形沟槽设置的第二导电型下电极层; 至少形成在所述第二导电型下电极层的表面上的电容器绝缘膜; 以及形成在电容器绝缘膜的表面上的第二导电型上电极。

9. 发明授权

US08237222B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08237222B2
公开(公告)日：2012-08-07
申请号：US12658825
申请日：2010-02-16
申请人： Ayako Inoue , Naoto Saitoh
发明人： Ayako Inoue , Naoto Saitoh
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0847 , H01L29/0649 , H01L29/1045 , H01L29/105 , H01L29/66568 , H01L29/7834
摘要： In a method of manufacturing a high withstanding voltage MOSFET, a region to be doped with impurities and a region to be doped with no impurity are provided when ion implantation of the impurities is performed in the channel forming region, for controlling a threshold voltage. The region to be doped with no impurity is suitably patterned so that impurity concentration of the channel forming region near boundaries between a well region and a source region and between the well region and a drain region having the same conductivity type as the well region may be increased, to thereby induce a reverse short channel effect. By canceling a short channel effect with the reverse short channel effect induced by the above-mentioned method, the short channel effect of the high withstanding voltage MOSFET may be suppressed.
摘要翻译：在制造耐高压MOSFET的方法中，当在沟道形成区域中进行杂质的离子注入时，提供要掺杂有杂质的区域和不掺杂的区域，用于控制阈值电压。掺杂没有杂质的区域被适当地图案化，使得在阱区域和源极区域之间以及阱区域和与阱区域具有相同导电类型的漏极区域之间的边界附近的沟道形成区域的杂质浓度可以是增加，从而引起反向短通道效应。通过利用由上述方法引起的反向短通道效应消除短通道效应，可以抑制高耐压电压MOSFET的短沟道效应。

10. 发明申请

US20070296294A1 Electric motor and electronic apparatus 失效
标题翻译：电机及电子仪器
公开(公告)号：US20070296294A1
公开(公告)日：2007-12-27
申请号：US11820932
申请日：2007-06-21
申请人： Tetsuya Nobe , Takayuki Satodate , Ayako Inoue , Akihiro Iino
发明人： Tetsuya Nobe , Takayuki Satodate , Ayako Inoue , Akihiro Iino
IPC分类号： H02K37/14 , H02K5/16 , H02K21/12
CPC分类号： H02K5/1672 , F16C35/02 , H02K7/083 , H02K21/145 , H02K37/14
摘要： To provide an electric motor efficiently operating a torque to a rotor by a stator while preventing an increase in a friction load by a slider and capable of achieving small-sized formation of a total of an apparatus in an axis line direction, an electric motor 1 includes a rotor 3 substantially in a cylindrical shape, a rotating shaft 4 provided at a center of rotation of the rotor 3, a stator 5 for covering an outer peripheral portion 3a of the rotor 3 and having yokes 23, 24 capable of operating a torque around the rotating shaft 4 of the rotor 3 by forming a magnetic field, bearings 13, 14 fixed by the stator 5 by support members 11, 12 for supporting the rotating shaft 4 rotatably, and sliders 8 substantially in a plate-like shape interposed between the bearings 13, 14 and end portions 3c of the rotor 3, and the end portion 3c of the rotor 3 is formed with a first recessed portion 6 for containing at least a portion of the slider 8 in an axis line L direction of the rotating shaft 4 slidably around the rotating shaft 4.
摘要翻译：为了提供一种电动机，通过定子有效地对转子施加转矩，同时防止滑块的摩擦负载增加并且能够在轴线方向上实现总体上小的装置的形成，电动机1 包括基本上为圆筒形的转子3，设置在转子3的旋转中心的旋转轴4，用于覆盖转子3的外周部分3a并具有能够操作转子3的轭23,24的定子5 通过形成磁场而绕转子3的旋转轴4转动的扭矩，由定子5通过用于可旋转地支撑旋转轴4的支撑构件11,12固定的轴承13,14以及基本上呈板状形状的滑块8 在转子3的轴承13,14和端部3c之间以及转子3的端部3c形成有第一凹部6，用于将滑块8的至少一部分沿轴线L方向的旋转sh 后部4围绕旋转轴4可滑动。

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