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1. 发明申请

US20050263705A1 Carbon dioxide concentration measuring device, method of measuring carbon dioxide concentration and burning appliance 审中-公开
标题翻译：二氧化碳浓度测量装置，二氧化碳浓度测量方法和燃烧器具
公开(公告)号：US20050263705A1
公开(公告)日：2005-12-01
申请号：US11137335
申请日：2005-05-26
申请人： Takashi Asatani , Akira Shibue
发明人： Takashi Asatani , Akira Shibue
IPC分类号： G01N21/35 , F23N5/24 , F24C3/12 , F24C5/16 , G01N21/3504 , G01N21/72 , H01L35/08 , H01L35/32 , G01J3/42
CPC分类号： G01N21/72 , F24C5/16 , G01N21/3504
摘要： A carbon dioxide concentration measuring device or a method of measuring carbon dioxide concentration which can measure the carbon dioxide concentration in outside air with high accuracy is provided. A carbon dioxide sensor mounted in a heating appliance includes a generator which generates electric power through the use of combustion heat, more specifically through directly converting the heat energy of combustion heat from a flame for heating into electrical energy. The carbon dioxide sensor operates through the use of electrical energy generated by the generator, so unlike a carbon dioxide sensor in a related art which operates through the use of a consumable power source such as a dry cell, as long as electrical energy is generated by the generator, the emission intensity of infrared rays does not change with time, or a computing process by a control circuit is not impeded, so an error due to a change in the emission intensity of infrared rays or the impediment to the computing process by the control circuit is not easily included in the result of measurement of carbon dioxide concentration.
摘要翻译：提供二氧化碳浓度测量装置或测量二氧化碳浓度的方法，其可以高精度地测量外部空气中的二氧化碳浓度。安装在加热器具中的二氧化碳传感器包括通过使用燃烧热产生电力的发生器，更具体地，通过将来自用于加热的火焰的燃烧热的热能直接转换成电能。二氧化碳传感器通过使用由发电机产生的电能来操作，因此与现有技术中通过使用诸如干电池的可消耗电源操作的二氧化碳传感器不同，只要电能由发生器，红外线的发射强度不随时间变化，或者控制电路的计算处理不受阻碍，因此由于红外线的发射强度的变化或由于红外线的计算处理的障碍而引起的误差控制电路不容易包含在二氧化碳浓度测定结果中。

2. 发明授权

US06568265B2 Humidity sensor and method for making 有权
标题翻译：湿度传感器和制造方法
公开(公告)号：US06568265B2
公开(公告)日：2003-05-27
申请号：US09820644
申请日：2001-03-30
申请人： Akira Shibue , Kenryo Namba
发明人： Akira Shibue , Kenryo Namba
IPC分类号： G01N1910
CPC分类号： G01N27/126 , G01N27/121 , Y10T428/26 , Y10T428/265 , Y10T428/31663 , Y10T428/31938
摘要： A humidity sensor includes a pair of interdigital electrodes disposed on an insulating substrate and defining a gap therebetween, an undercoat layer of silane compound lying on the gap-defining electrodes and substrate, and a humidity sensitive thin film lying thereon. The humidity sensitive thin film is formed of a crosslinked product of a conductive polymer having ethylenically unsaturated groups, and physically bound to the undercoat layer through an interpenetrating polymer network. The sensor is fully resistant to water so that it ensures stable operation over a long time even in a dew condensing atmosphere. The sensor is free of hysteresis and able to measure humidity over a very wide range.
摘要翻译：湿度传感器包括设置在绝缘基板上并在其间限定间隔的一对叉指电极，位于间隙限定电极和基板上的硅烷化合物的底涂层和位于其上的湿敏薄膜。湿敏薄膜由具有烯属不饱和基团的导电聚合物的交联产物形成，并通过互穿聚合物网物理结合到底涂层。传感器完全抵抗水分，即使在结露气氛中也能保证长时间的稳定运行。传感器没有滞后现象，能够在很宽的范围内测量湿度。

3. 发明申请

US20100265632A1 THIN-FILM CAPACITOR AND ELECTRONIC CIRCUIT BOARD 有权
标题翻译：薄膜电容器和电子电路板
公开(公告)号：US20100265632A1
公开(公告)日：2010-10-21
申请号：US12756520
申请日：2010-04-08
申请人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
发明人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
IPC分类号： H01G4/10
CPC分类号： H01G4/33 , C04B35/4682 , C04B2235/3224 , C04B2235/3239 , C04B2235/3251 , C04B2235/3262 , C04B2235/441 , C04B2235/764 , C04B2235/79 , H01G4/1227 , H01L27/016 , H01L28/40 , H05K1/185
摘要： The present invention provides a thin-film capacitor having an insulation resistance value higher than that conventionally available and high reliability. The thin-film capacitor of the present invention comprises a dielectric thin film and electrodes opposing each other through the dielectric thin film interposed therebetween; wherein the dielectric thin film contains a perovskite-type composite oxide having a composition expressed by the following chemical formula (1), Mn, and at least one kind of element M selected from the group consisting of V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide: AyBO3 (1) where A is at least one kind of element selected from the group consisting of Ba, Sr, Ca, and Pb, B is at least one kind of element selected from the group consisting of Ti, Zr, Hf, and Sn, and 0.97≦y≦0.995.
摘要翻译：本发明提供一种绝缘电阻值高于现有技术和高可靠性的薄膜电容器。本发明的薄膜电容器包括介电薄膜和介于其间的电介质薄膜彼此相对的电极; 其特征在于，所述电介质薄膜含有由以下化学式（1）表示的组成为Mn的钙钛矿型复合氧化物和选自V，Nb，Ta中的至少一种元素M; 其中所述电介质薄膜相对于所述复合氧化物100摩尔的Mn含量为0.05〜0.45摩尔; 并且其中所述电介质薄膜相对于100摩尔所述复合氧化物的总元素M含量为0.05至0.5摩尔：AyBO 3（1）其中A是选自Ba，Sr， Ca和Pb，B是选自Ti，Zr，Hf和Sn中的至少一种元素，以及0.97和nlE; y＆nlE; 0.995。

4. 发明申请

US20100246092A1 THIN-FILM DEVICE 有权
标题翻译：薄膜器件
公开(公告)号：US20100246092A1
公开(公告)日：2010-09-30
申请号：US12727549
申请日：2010-03-19
申请人： Akira SHIBUE , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
发明人： Akira SHIBUE , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
IPC分类号： H01G4/06
CPC分类号： H01G4/33 , H01G4/232 , H01G4/30 , H01L28/40
摘要： A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.
摘要翻译：薄膜器件包括由金属制成的基极，第一介电层，第一内部电极，第二电介质层，第二内部电极和第三电介质层。设T1为与多个电介质层中的基极接触的最低的第一电介质层的厚度，Tmin为除了第一电介质层之外的多个电介质层中最薄的电介质层的厚度，T1> Tmin。由于基极的表面粗糙度和安装在最下层电介质层上的内电极的表面粗糙度，使得第一电介质层比其他电介质层中最薄的电介质层的电介质层增加了从金属表面突出的金属部分之间的距离，从而减少漏电流。

5. 发明授权

US08435645B2 Dielectric device and method of manufacturing dielectric device 有权
标题翻译：电介质器件及其制造方法
公开(公告)号：US08435645B2
公开(公告)日：2013-05-07
申请号：US12727546
申请日：2010-03-19
申请人： Akira Shibue , Tomohiko Kato , Shinichiro Kakei , Yasunobu Oikawa , Kenji Horino
发明人： Akira Shibue , Tomohiko Kato , Shinichiro Kakei , Yasunobu Oikawa , Kenji Horino
IPC分类号： B32B15/00 , H01G4/008
CPC分类号： H01G4/008 , H01G4/12 , H01G4/33 , Y10T428/12493 , Y10T428/12514 , Y10T428/12535 , Y10T428/12583 , Y10T428/1259 , Y10T428/12944 , Y10T428/24851
摘要： A dielectric device comprises a substrate made of a metal and an oxide dielectric layer mounted on a surface of the substrate. The surface of the substrate has metal oxide regions distributed like islands, while the oxide dielectric layer is in close contact with the substrate through the metal oxide regions. Since adhesion is higher in an area where the substrate and the oxide dielectric layer are in close contact with each other through the metal oxide regions distributed like islands on the surface of the substrate, the adhesion between the substrate and oxide dielectric layer in the dielectric device is enhanced. As compared with a case where a rough surface is formed on a metal foil, the metal oxide region and the substrate are inhibited from forming a rough surface, whereby leakage characteristics can be kept from being deteriorated by the rough surface.
摘要翻译：电介质器件包括由金属制成的衬底和安装在衬底表面上的氧化物电介质层。衬底的表面具有像岛状分布的金属氧化物区域，而氧化物介电层通过金属氧化物区域与衬底紧密接触。由于在基板和氧化物电介质层通过在基板表面上分布成岛状的金属氧化物区域彼此紧密接触的区域中的粘附性较高，因此介电装置中的基板与氧化物介电层之间的粘附增强了。与在金属箔上形成粗糙表面的情况相比，金属氧化物区域和基板被抑制形成粗糙表面，从而可以防止粗糙表面的泄漏特性劣化。

6. 发明授权

US08315038B2 Thin-film capacitor and electronic circuit board 有权
标题翻译：薄膜电容器和电子电路板
公开(公告)号：US08315038B2
公开(公告)日：2012-11-20
申请号：US12756520
申请日：2010-04-08
申请人： Hitoshi Saita , Naoto Tsukamoto , Akira Shibue , Kenji Horino
发明人： Hitoshi Saita , Naoto Tsukamoto , Akira Shibue , Kenji Horino
IPC分类号： H01G9/02 , C04B35/00
CPC分类号： H01G4/33 , C04B35/4682 , C04B2235/3224 , C04B2235/3239 , C04B2235/3251 , C04B2235/3262 , C04B2235/441 , C04B2235/764 , C04B2235/79 , H01G4/1227 , H01L27/016 , H01L28/40 , H05K1/185
摘要： A thin-film capacitor has a high insulation resistance value with high reliability. The thin-film capacitor includes a dielectric thin film and electrodes opposing each other through the dielectric thin film, the dielectric thin film containing a perovskite-type composite oxide having a composition expressed by (1), Mn, and at least one kind of element M selected from V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide: AyBO3 (1) where A is at least one kind of element selected from Ba, Sr, Ca, and Pb, B is at least one kind of element selected from Ti, Zr, Hf, and Sn, and 0.97≦y≦0.995.
摘要翻译：薄膜电容器具有高可靠性的绝缘电阻值高。薄膜电容器包括电介质薄膜和通过电介质薄膜彼此相对的电极，该电介质薄膜含有具有由（1）表示的组成的钙钛矿型复合氧化物，Mn和至少一种元素 M选自V，Nb和Ta; 其中所述电介质薄膜相对于所述复合氧化物100摩尔的Mn含量为0.05〜0.45摩尔; 相对于100摩尔的复合氧化物，电介质薄膜的总成分M含量为0.05〜0.5摩尔，AyBO 3（1）其中A为选自Ba，Sr，Ca，Pb中的至少一种元素，B是选自Ti，Zr，Hf和Sn中的至少一种元素，以及0.97和nlE; y＆nlE; 0.995。

7. 发明申请

US20100260981A1 DIELECTRIC DEVICE AND METHOD OF MANUFACTURING DIELECTRIC DEVICE 有权
标题翻译：电介质器件及制造电介质器件的方法
公开(公告)号：US20100260981A1
公开(公告)日：2010-10-14
申请号：US12727546
申请日：2010-03-19
申请人： Akira SHIBUE , Tomohiko KATO , Shinichiro KAKEI , Yasunobu OIKAWA , Kenji HORINO
发明人： Akira SHIBUE , Tomohiko KATO , Shinichiro KAKEI , Yasunobu OIKAWA , Kenji HORINO
IPC分类号： B32B3/10 , H01L29/00
CPC分类号： H01G4/008 , H01G4/12 , H01G4/33 , Y10T428/12493 , Y10T428/12514 , Y10T428/12535 , Y10T428/12583 , Y10T428/1259 , Y10T428/12944 , Y10T428/24851
摘要： A dielectric device comprises a substrate made of a metal and an oxide dielectric layer mounted on a surface of the substrate. The surface of the substrate has metal oxide regions distributed like islands, while the oxide dielectric layer is in close contact with the substrate through the metal oxide regions. Since adhesion is higher in an area where the substrate and the oxide dielectric layer are in close contact with each other through the metal oxide regions distributed like islands on the surface of the substrate, the adhesion between the substrate and oxide dielectric layer in the dielectric device is enhanced. As compared with a case where a rough surface is formed on a metal foil, the metal oxide region and the substrate are inhibited from forming a rough surface, whereby leakage characteristics can be kept from being deteriorated by the rough surface.
摘要翻译：电介质器件包括由金属制成的衬底和安装在衬底的表面上的氧化物电介质层。衬底的表面具有像岛状分布的金属氧化物区域，而氧化物介电层通过金属氧化物区域与衬底紧密接触。由于在基板和氧化物电介质层通过在基板表面上分布成岛状的金属氧化物区域彼此紧密接触的区域中的粘附性较高，因此介电装置中的基板与氧化物介电层之间的粘附增强了。与在金属箔上形成粗糙表面的情况相比，金属氧化物区域和基板被抑制形成粗糙表面，从而可以防止粗糙表面的泄漏特性劣化。

8. 发明申请

US20090246361A1 METHOD FOR MANUFACTURING DIELECTRIC ELEMENT 审中-公开
标题翻译：制造电介质元件的方法
公开(公告)号：US20090246361A1
公开(公告)日：2009-10-01
申请号：US12409886
申请日：2009-03-24
申请人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
发明人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
IPC分类号： B05D5/12
CPC分类号： H01L21/02197 , H01G4/1227 , H01G4/33 , H01L21/02282 , H01L21/02356 , H01L21/31691 , H01L27/016 , H01L28/55
摘要： The present invention provides a method for manufacturing a dielectric element in which a dielectric film is formed by a chemical solution deposition method, with enhanced tolerance of the dielectric film of wet processes. A method for manufacturing a dielectric element comprises a process of heating a film of a solution of a precursor on a metal layer in an oxidizing atmosphere, to form a calcined film comprising a dielectric material generated from the precursor, and a process of annealing the calcined film to form a dielectric film comprising the dielectric material that has been crystallized. The dielectric material is a metal oxide which forms a perovskite-structure crystal having A sites and B sites. The solution of the precursor comprises an element occupying A sites and an element occupying B sites in the dielectric film, at a molar ratio of the element occupying A sites to the element occupying B sites of 0.85 or higher and 1.00 or lower. The annealing temperature of the solution film is 400 to 480° C.
摘要翻译：本发明提供了一种电介质元件的制造方法，其中通过化学溶液沉积法形成电介质膜，其具有增强的湿法电介质膜的耐受性。制造电介质元件的方法包括在氧化气氛中在金属层上加热前体溶液的膜以形成包含由前体产生的介电材料的煅烧膜的方法，以及将煅烧过的以形成包括已经结晶的电介质材料的电介质膜。介电材料是形成具有A位点和B位点的钙钛矿型结构的金属氧化物。前体溶液包含占据A位置的元素和占据电介质膜中B位的元素，占据A位置的元素与占据B位点的元素的摩尔比为0.85以上且1.00以下。溶液膜的退火温度为400〜480℃。

9. 发明授权

US07553765B2 Method of manufacturing thin-film electronic device having a through-hole extending through the base and in communicative connection with an opening in the electrically conductive layer 有权
标题翻译：制造薄膜电子器件的方法，该薄膜电子器件具有延伸穿过基底并与导电层中的开口连通的通孔
公开(公告)号：US07553765B2
公开(公告)日：2009-06-30
申请号：US11490164
申请日：2006-07-21
申请人： Eiju Komuro , Osamu Shinoura , Yumiko Ozaki , Akira Shibue
发明人： Eiju Komuro , Osamu Shinoura , Yumiko Ozaki , Akira Shibue
IPC分类号： H01L21/44
CPC分类号： H01L27/016
摘要： A method of manufacturing a thin-film electronic device comprising providing a dielectric layer on a base, providing a first electrically conductive layer having a first opening and covering at least part of the dielectric layer; and forming a first through-hole extending through the base and communicating with the first opening. A second electrically conductive layer may be provided on the base, and a dielectric layer may be provided so as to cover at least part of this second conductive layer.
摘要翻译：一种制造薄膜电子器件的方法，包括在基底上提供电介质层，提供具有第一开口并覆盖所述电介质层的至少一部分的第一导电层; 以及形成延伸穿过所述基座并与所述第一开口连通的第一通孔。可以在基底上设置第二导电层，并且可以设置介电层以覆盖该第二导电层的至少一部分。

10. 发明授权

US5240863A Method of measuring immunoreactant using electrochemiluminescence 失效
标题翻译：使用电子显微镜测量免疫反应物的方法
公开(公告)号：US5240863A
公开(公告)日：1993-08-31
申请号：US836740
申请日：1992-02-19
申请人： Akira Shibue , Masaru Tanaka , Shinji Kamiya
发明人： Akira Shibue , Masaru Tanaka , Shinji Kamiya
IPC分类号： G01N33/536 , G01N21/66 , G01N21/76 , G01N33/543 , G01N33/58 , G01N33/68
CPC分类号： G01N33/582 , G01N33/54313 , G01N33/6854 , G01N21/66 , G01N21/76
摘要： Detecting an immunoreactant in a liquid sample, by:mixing the liquid sample with an excess of a complementary immunoreactant capable of specifically binding to the immunoreactant to allow an immunoreaction to take place, in which the complementary immunoreactant is immobilized on insoluble carrier particles and labeled with an electrochemiluminescent substance that emits an electrochemiluminescent light by electrolytic oxidation in the presence of activated oxygen,applying an electric voltage to a pair of electrodes between which the mixture obtained above is placed, in the presence of activated oxygen to allow electrochemiluminescence to take place;measuring the emission of the electrochemiluminescent light; andcorrelating the presence of the immunoreactant with the amount of measured electrochemiluminescent light, is a highly accurate method, because the rate of change of the emission of luminescent light as a function of immunoreactant concentration in the sample is high.

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