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1. 发明申请

US20090246361A1 METHOD FOR MANUFACTURING DIELECTRIC ELEMENT 审中-公开
标题翻译：制造电介质元件的方法
公开(公告)号：US20090246361A1
公开(公告)日：2009-10-01
申请号：US12409886
申请日：2009-03-24
申请人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
发明人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
IPC分类号： B05D5/12
CPC分类号： H01L21/02197 , H01G4/1227 , H01G4/33 , H01L21/02282 , H01L21/02356 , H01L21/31691 , H01L27/016 , H01L28/55
摘要： The present invention provides a method for manufacturing a dielectric element in which a dielectric film is formed by a chemical solution deposition method, with enhanced tolerance of the dielectric film of wet processes. A method for manufacturing a dielectric element comprises a process of heating a film of a solution of a precursor on a metal layer in an oxidizing atmosphere, to form a calcined film comprising a dielectric material generated from the precursor, and a process of annealing the calcined film to form a dielectric film comprising the dielectric material that has been crystallized. The dielectric material is a metal oxide which forms a perovskite-structure crystal having A sites and B sites. The solution of the precursor comprises an element occupying A sites and an element occupying B sites in the dielectric film, at a molar ratio of the element occupying A sites to the element occupying B sites of 0.85 or higher and 1.00 or lower. The annealing temperature of the solution film is 400 to 480° C.
摘要翻译：本发明提供了一种电介质元件的制造方法，其中通过化学溶液沉积法形成电介质膜，其具有增强的湿法电介质膜的耐受性。制造电介质元件的方法包括在氧化气氛中在金属层上加热前体溶液的膜以形成包含由前体产生的介电材料的煅烧膜的方法，以及将煅烧过的以形成包括已经结晶的电介质材料的电介质膜。介电材料是形成具有A位点和B位点的钙钛矿型结构的金属氧化物。前体溶液包含占据A位置的元素和占据电介质膜中B位的元素，占据A位置的元素与占据B位点的元素的摩尔比为0.85以上且1.00以下。溶液膜的退火温度为400〜480℃。

2. 发明申请

US20100265632A1 THIN-FILM CAPACITOR AND ELECTRONIC CIRCUIT BOARD 有权
标题翻译：薄膜电容器和电子电路板
公开(公告)号：US20100265632A1
公开(公告)日：2010-10-21
申请号：US12756520
申请日：2010-04-08
申请人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
发明人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
IPC分类号： H01G4/10
CPC分类号： H01G4/33 , C04B35/4682 , C04B2235/3224 , C04B2235/3239 , C04B2235/3251 , C04B2235/3262 , C04B2235/441 , C04B2235/764 , C04B2235/79 , H01G4/1227 , H01L27/016 , H01L28/40 , H05K1/185
摘要： The present invention provides a thin-film capacitor having an insulation resistance value higher than that conventionally available and high reliability. The thin-film capacitor of the present invention comprises a dielectric thin film and electrodes opposing each other through the dielectric thin film interposed therebetween; wherein the dielectric thin film contains a perovskite-type composite oxide having a composition expressed by the following chemical formula (1), Mn, and at least one kind of element M selected from the group consisting of V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide: AyBO3 (1) where A is at least one kind of element selected from the group consisting of Ba, Sr, Ca, and Pb, B is at least one kind of element selected from the group consisting of Ti, Zr, Hf, and Sn, and 0.97≦y≦0.995.
摘要翻译：本发明提供一种绝缘电阻值高于现有技术和高可靠性的薄膜电容器。本发明的薄膜电容器包括介电薄膜和介于其间的电介质薄膜彼此相对的电极; 其特征在于，所述电介质薄膜含有由以下化学式（1）表示的组成为Mn的钙钛矿型复合氧化物和选自V，Nb，Ta中的至少一种元素M; 其中所述电介质薄膜相对于所述复合氧化物100摩尔的Mn含量为0.05〜0.45摩尔; 并且其中所述电介质薄膜相对于100摩尔所述复合氧化物的总元素M含量为0.05至0.5摩尔：AyBO 3（1）其中A是选自Ba，Sr， Ca和Pb，B是选自Ti，Zr，Hf和Sn中的至少一种元素，以及0.97和nlE; y＆nlE; 0.995。

3. 发明申请

US20090242257A1 ELECTRONIC COMPONENT AND ELECTRONIC COMPONENT MODULE 有权
标题翻译：电子元件和电子元件模块
公开(公告)号：US20090242257A1
公开(公告)日：2009-10-01
申请号：US12410699
申请日：2009-03-25
申请人： Shinichiro KAKEI , Kenji HORINO , Hitoshi SAITA , Yasunobu OIKAWA
发明人： Shinichiro KAKEI , Kenji HORINO , Hitoshi SAITA , Yasunobu OIKAWA
IPC分类号： H05K1/16
CPC分类号： H05K1/162 , H05K3/382 , H05K2201/0175 , H05K2201/0187 , H05K2201/0355 , H05K2201/09509 , H05K2201/09718 , H05K2201/09763 , H05K2203/033
摘要： In a dielectric element, the side faces are roughened so that the surface roughness Ra is 15 nm or greater. By this means, the area of contact between a glass epoxy resin substrate and insulating material is increased, adhesion with resin substrates is improved, and strength and reliability can be enhanced when buried between two resin substrates. In the dielectric element, the surface roughness Ra of side surfaces is 5000 nm or less, so that when burying the dielectric element between a glass epoxy resin substrate and insulating material, the occurrence of air bubbles between the surface of the dielectric element and the resin can be prevented.
摘要翻译：在电介质元件中，侧面粗糙化，使得表面粗糙度Ra为15nm以上。通过这种方式，玻璃环氧树脂基板和绝缘材料之间的接触面积增加，与树脂基板的粘合性提高，并且当埋在两个树脂基板之间时可以提高强度和可靠性。在电介质元件中，侧面的表面粗糙度Ra为5000nm以下，因此当在玻璃环氧树脂基板和绝缘材料之间埋入电介质元件时，介电元件表面与树脂之间产生气泡可以防止。

4. 发明申请

US20100260981A1 DIELECTRIC DEVICE AND METHOD OF MANUFACTURING DIELECTRIC DEVICE 有权
标题翻译：电介质器件及制造电介质器件的方法
公开(公告)号：US20100260981A1
公开(公告)日：2010-10-14
申请号：US12727546
申请日：2010-03-19
申请人： Akira SHIBUE , Tomohiko KATO , Shinichiro KAKEI , Yasunobu OIKAWA , Kenji HORINO
发明人： Akira SHIBUE , Tomohiko KATO , Shinichiro KAKEI , Yasunobu OIKAWA , Kenji HORINO
IPC分类号： B32B3/10 , H01L29/00
CPC分类号： H01G4/008 , H01G4/12 , H01G4/33 , Y10T428/12493 , Y10T428/12514 , Y10T428/12535 , Y10T428/12583 , Y10T428/1259 , Y10T428/12944 , Y10T428/24851
摘要： A dielectric device comprises a substrate made of a metal and an oxide dielectric layer mounted on a surface of the substrate. The surface of the substrate has metal oxide regions distributed like islands, while the oxide dielectric layer is in close contact with the substrate through the metal oxide regions. Since adhesion is higher in an area where the substrate and the oxide dielectric layer are in close contact with each other through the metal oxide regions distributed like islands on the surface of the substrate, the adhesion between the substrate and oxide dielectric layer in the dielectric device is enhanced. As compared with a case where a rough surface is formed on a metal foil, the metal oxide region and the substrate are inhibited from forming a rough surface, whereby leakage characteristics can be kept from being deteriorated by the rough surface.
摘要翻译：电介质器件包括由金属制成的衬底和安装在衬底的表面上的氧化物电介质层。衬底的表面具有像岛状分布的金属氧化物区域，而氧化物介电层通过金属氧化物区域与衬底紧密接触。由于在基板和氧化物电介质层通过在基板表面上分布成岛状的金属氧化物区域彼此紧密接触的区域中的粘附性较高，因此介电装置中的基板与氧化物介电层之间的粘附增强了。与在金属箔上形成粗糙表面的情况相比，金属氧化物区域和基板被抑制形成粗糙表面，从而可以防止粗糙表面的泄漏特性劣化。

5. 发明申请

US20110128669A1 THIN-FILM CAPACITOR 有权
标题翻译：薄膜电容器
公开(公告)号：US20110128669A1
公开(公告)日：2011-06-02
申请号：US12956060
申请日：2010-11-30
申请人： Yoshihiko YANO , Yasunobu OIKAWA , Kenji HORINO , Hitoshi SAITA
发明人： Yoshihiko YANO , Yasunobu OIKAWA , Kenji HORINO , Hitoshi SAITA
IPC分类号： H01G4/20
CPC分类号： H01G4/33 , H01G4/005 , H01G4/012 , H01G4/20
摘要： A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided.In a thin-film capacitor 100 according to the present embodiment, because through holes H are formed in internal electrodes 3, 5, 7, and 9 containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 μm2 to 7.0 μm2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes 3, 5, 7, and 9 is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes 3, 5, 7, and 9 and dielectric layers 2, 4, 6, 8, and 10, and as a result, the yield is enhanced.
摘要翻译：提供了不容易产生内部开裂或剥离的薄膜电容器。在本实施方式的薄膜电容器100中，由于在层叠方向上以Ni为主要成分的内部电极3,5,7,9形成通孔H，因此，通孔H在0.19μm2〜7.0μm2的范围内，通孔H的表面积与内部电极3,5,7,9的整个主面的表面积的比例在在内部电极3,5,7和9以及电介质层2,4,6,8和10之间的边界处，抑制了剥离或破裂的范围为0.05％至5％，结果，产量提高。

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