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    • 4. 发明申请
    • METHOD OF MANUFACTURING CAPACITOR
    • 制造电容器的方法
    • US20100093150A1
    • 2010-04-15
    • US12635838
    • 2009-12-11
    • Tomohiko KATOYuko SayaOsamu Shinoura
    • Tomohiko KATOYuko SayaOsamu Shinoura
    • H01L21/02
    • H01G4/005H01G4/33Y10T29/417Y10T29/435
    • One capacitor fabrication process of the invention comprises a noble metal layer formation step of forming a noble metal layer on one surface of a substrate, a dielectric layer formation step of forming a dielectric layer on the noble metal layer, a metal foil formation step of forming a metal foil of 10 μm or greater in thickness on the dielectric layer, a separation step of separating the noble metal layer from the dielectric layer at an interface, and an electrode layer formation step of forming an electrode layer on the second surface of the dielectric layer separated off by the separation step, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil formed thereon.Another capacitor fabrication process of the invention comprises a separation layer formation step of forming a separation layer on one surface of a substrate, a dielectric layer formation step of forming a dielectric layer on the separation layer, a metal foil formation step of forming a metal foil of 10 μm or more in thickness on the dielectric layer, a separation step of separating the substrate from the separation layer at an interface, and an electrode layer formation step of forming an electrode layer on the second surface of the dielectric layer separated off by said separation step via the separation layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil formed thereon. It is thus possible to obtain a thin-film capacitor at low costs and high yields that has an ever higher capacity, is so slimmed down in its entirety that it has a form well fit for being buried in a base board, and can be used even at high frequencies.
    • 本发明的一个电容器制造方法包括在基板的一个表面上形成贵金属层的贵金属层形成步骤,在贵金属层上形成电介质层的介电层形成步骤,形成金属箔的金属箔形成步骤 在电介质层上的厚度为10μm以上的金属箔,在界面处将贵金属层与电介质层分离的分离工序,以及在电介质的第二面上形成电极层的电极层形成工序 通过分离步骤分离的层,其中第二表面背面与金属箔形成在介质层的第一表面之间。 本发明的另一种电容器制造方法包括在基板的一个表面上形成分离层的分离层形成步骤,在分离层上形成电介质层的介电层形成步骤,形成金属箔的金属箔形成步骤 在介电层上的厚度为10μm以上的分离步骤,在界面处分离衬底与分离层的分离步骤,以及电极层形成步骤,在由所述介电层分离的介电层的第二表面上形成电极层 分离步骤,其中所述第二表面背离所述电介质层的所述第一表面,其中形成有所述金属箔。 因此,可以以低成本和高产率获得具有更高容量的薄膜电容器,其整体尺寸如此薄弱,使得其具有适合埋入基板中的形状,并且可以使用 即使在高频。
    • 7. 发明授权
    • Method of manufacturing capacitor
    • 制造电容器的方法
    • US07773364B2
    • 2010-08-10
    • US11779597
    • 2007-07-18
    • Tomohiko KatoYuko SayaOsamu Shinoura
    • Tomohiko KatoYuko SayaOsamu Shinoura
    • H01G4/06
    • H01G4/005H01G4/33Y10T29/417Y10T29/435
    • One capacitor fabrication process including metal layer forming a metal layer on one surface of a substrate, dielectric layer forming a dielectric layer on the metal layer, metal foil forming a metal foil on the dielectric layer, separating the noble metal layer from the dielectric layer, and electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil. Another capacitor fabrication process includes separation layer forming a separation layer on one surface of a substrate, dielectric layer forming a dielectric layer on the separation layer, metal foil forming a metal foil the dielectric layer, separating the substrate from the separation layer, and an electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil. A thin-film capacitor has higher capacity, is so slimmed down and has a form well fit for being buried in a base board, and can be used even at high frequencies.
    • 一种电容器制造方法,包括在基板的一个表面上形成金属层的金属层,在金属层上形成电介质层的介电层,在介电层上形成金属箔的金属箔,将贵金属层与电介质层分离, 以及在所述电介质层的第二表面上形成电极层的电极层,其中所述第二表面与所述金属箔相离离所述电介质层的所述第一表面。 另一种电容器制造方法包括在基板的一个表面上形成分离层的分离层,在分离层上形成电介质层的介电层,形成介电层的金属箔,从分离层分离基板的金属箔和电极 在所述电介质层的第二表面上形成电极层,其中所述第二表面用所述金属箔离开所述电介质层的所述第一表面。 薄膜电容器具有更高的容量,如此薄型化,并且具有很好地埋入基板中的形状,并且甚至可以在高频下使用。
    • 8. 发明授权
    • Train detection device for railroad models and train crossing control
apparatus utilizing the train detection device
    • 铁路车辆列车检测装置和列车检测装置的列车交叉控制装置
    • US5590855A
    • 1997-01-07
    • US274623
    • 1994-07-12
    • Ryochi KatoUmeko KatoTomohiko KatoHideto KatoTeruko Ichizuka
    • Ryochi KatoUmeko KatoTomohiko KatoHideto KatoTeruko Ichizuka
    • A63H19/24A63H19/34B61L3/08
    • A63H19/24A63H19/34Y10S104/01
    • A train detection device for use in railroad models is provided with a capacitance type sensor which detects the close approach or passage of a train by responding to capacitance of the train. By using the capacitance type sensor, the train detection device becomes a non-contact type detection device, which avoids the kind of damage that can occur with contact type detectors. The train detection device is applied to a train crossing control apparatus for use in railroad models equipped with a crossing gate, a warning signal, and a controlling device for controlling the operations of the crossing gate and the warning signal. The controlling device comprises the capacitance type sensors each provided on either side of the crossing so as to define an activation region, each of the sensors detecting the approach or passage of a train by responding to the capacitance thereof, the capacitance type crossing sensor that detects the approach or passage of a train through the crossing, and a reverse motion detection device that detects reversal of the direction of motion of the train. With these elements the train crossing control apparatus is able to determine the position of the train within the activation region, so as to accurately and reliably control the operations of the crossing gate and warning signal irregardless of any changes in the direction of motion thereof.
    • 用于铁路车辆的列车检测装置设置有电容式传感器,其通过响应列车的电容来检测列车的紧密接近或通过。 通过使用电容型传感器,列车检测装置成为非接触式检测装置,能够避免接触型检测器发生的损坏。 列车检测装置应用于搭载有交叉门的铁路车辆用的列车穿越控制装置,警告信号以及用于控制交叉门的操作和警告信号的控制装置。 控制装置包括电容式传感器,每个传感器设置在交叉点的两侧,以便限定激活区域,每个传感器通过响应于其电容来检测列车的接近或通过,检测电容型交叉传感器 火车通过十字路口的接近或通过,以及检测列车运动方向的反转的反向运动检测装置。 利用这些元件,列车穿越控制装置能够确定列车在启动区域内的位置,以便准确可靠地控制交叉门和警告信号的操作,无论其运动方向如何变化。
    • 10. 发明授权
    • Method of manufacturing capacitor
    • 制造电容器的方法
    • US08085523B2
    • 2011-12-27
    • US12635838
    • 2009-12-11
    • Tomohiko KatoYuko SayaOsamu Shinoura
    • Tomohiko KatoYuko SayaOsamu Shinoura
    • H01G4/06
    • H01G4/005H01G4/33Y10T29/417Y10T29/435
    • One capacitor fabrication process including metal layer forming a metal layer on one surface of a substrate, dielectric layer forming a dielectric layer on the metal layer, metal foil forming a metal foil on the dielectric layer, separating the noble metal layer from the dielectric layer, and electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil. Another capacitor fabrication process includes separation layer forming a separation layer on one surface of a substrate, dielectric layer forming a dielectric layer on the separation layer, metal foil forming a metal foil the dielectric layer, separating the substrate from the separation layer, and an electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil. A thin-film capacitor has higher capacity, is so slimmed down and has a form well fit for being buried in a base board, and can be used even at high frequencies.
    • 一种电容器制造方法,包括在基板的一个表面上形成金属层的金属层,在金属层上形成电介质层的介电层,在介电层上形成金属箔的金属箔,将贵金属层与电介质层分离, 以及在所述电介质层的第二表面上形成电极层的电极层,其中所述第二表面与所述金属箔相离离所述电介质层的所述第一表面。 另一种电容器制造方法包括在基板的一个表面上形成分离层的分离层,在分离层上形成电介质层的介电层,形成介电层的金属箔,从分离层分离基板的金属箔和电极 在所述电介质层的第二表面上形成电极层,其中所述第二表面用所述金属箔离开所述电介质层的所述第一表面。 薄膜电容器具有更高的容量,如此薄型化,并且具有很好地埋入基板中的形状,并且甚至可以在高频下使用。