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1. 发明申请

US20080274605A1 METHOD OF MANUFACTURING SILICON NITRIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造氮化硅膜的方法，制造半导体器件的方法和半导体器件
公开(公告)号：US20080274605A1
公开(公告)日：2008-11-06
申请号：US12167025
申请日：2008-07-02
申请人： Takeshi Hoshi , Tsuyoshi Saito , Hitoshi Kato , Koichi Orito
发明人： Takeshi Hoshi , Tsuyoshi Saito , Hitoshi Kato , Koichi Orito
IPC分类号： H01L21/31 , H01L21/28
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45527 , H01L21/02274 , H01L21/3185 , H01L21/76802 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L21/8238 , H01L21/823864 , H01L29/6659 , H01L29/7833
摘要： A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.
摘要翻译：制造在衬底表面上形成氮化硅膜的氮化硅膜的方法包括顺序地重复第一至第三步骤。第一步包括将含有硅和氮的第一气体进料到基材的表面。第二步骤包括将含有氮气的第二气体进料到基材的表面。第三步骤包括将含有氢的第三气体进料到基材的表面。

2. 发明申请

US20050205940A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050205940A1
公开(公告)日：2005-09-22
申请号：US11003484
申请日：2004-12-06
申请人： Fumio Ootsuka
发明人： Fumio Ootsuka
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/74 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/111 , H01L31/113 , H01L31/119
CPC分类号： H01L21/823857 , H01L21/823842 , H01L21/823864 , H01L29/66545 , H01L29/6656
摘要： In a semiconductor device having a first transistor and a second transistor, the first transistor includes a first gate electrode composed of a first material having a first work function, and a first gate insulating film. The second transistor includes a second gate electrode composed of a second material having a second work function, and a second gate insulating film. The first gate insulating film includes a high-dielectric-constant film, and a first insulating film on the high-dielectric-constant film. In the second gate insulating film, after removing the first gate electrode, the first insulating film on the high-dielectric-constant film is removed.
摘要翻译：在具有第一晶体管和第二晶体管的半导体器件中，第一晶体管包括由具有第一功函数的第一材料和第一栅极绝缘膜构成的第一栅电极。第二晶体管包括由具有第二功函数的第二材料和第二栅极绝缘膜构成的第二栅电极。第一栅极绝缘膜包括高介电常数膜和高介电常数膜上的第一绝缘膜。在第二栅极绝缘膜中，在除去第一栅电极之后，去除高介电常数膜上的第一绝缘膜。

3. 发明申请

US20050202323A1 Phase shift mask and method of manufacturing phase shift mask 审中-公开
标题翻译：相移掩模和相移掩模的制造方法
公开(公告)号：US20050202323A1
公开(公告)日：2005-09-15
申请号：US11022700
申请日：2004-12-28
申请人： Kunio Watanabe
发明人： Kunio Watanabe
IPC分类号： G03F1/30 , G03F1/58 , G03F1/68 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G03F1/30
摘要： A phase shift mask comprises a transparent substrate and a light shielding film. The transparent substrate has two regions that transmit exposure light. The exposure light transmitted through one region having a phase that is inverted in a recessed portion formed in the other region. The light shielding film shields the exposure light. The light shielding film is formed on the transparent substrate with a plurality of film thicknesses and has an edge that does not hang over the recessed portion.
摘要翻译：相移掩模包括透明基板和遮光膜。透明基板具有透射曝光光的两个区域。曝光光透过一个区域，该区域具有形成在另一区域中的凹部中被倒置的相位。遮光膜屏蔽曝光灯。遮光膜形成在多个膜厚度的透明基板上，并且具有不悬在凹部上的边缘。

4. 发明申请

US20050196977A1 Method of forming silicon nitride film and method of manufacturing semiconductor device 有权
标题翻译：形成氮化硅膜的方法和制造半导体器件的方法
公开(公告)号：US20050196977A1
公开(公告)日：2005-09-08
申请号：US11057246
申请日：2005-02-15
申请人： Tsuyoshi Saito , Hiromi Itoh , Makiko Kitazoe
发明人： Tsuyoshi Saito , Hiromi Itoh , Makiko Kitazoe
IPC分类号： H01L21/318 , H01L21/4763 , H01L29/78
CPC分类号： H01L21/76829 , C23C16/045 , C23C16/345 , C23C16/44 , H01L21/0217 , H01L21/02277 , H01L21/31116 , H01L21/31144 , H01L21/3212 , H01L21/76802 , H01L21/76831 , H01L21/76834 , H01L29/7833
摘要： A method of forming a silicon nitride film comprises: forming a silicon nitride film by applying first gas containing silicon and nitrogen and second gas containing nitrogen and hydrogen to catalyst heated in a reduced pressure atmosphere. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate having the semiconductor layer, a gate insulation film selectively provided on a principal surface of the semiconductor layer, and a gate electrode provided on the gate insulation film; and removing the silicon nitride film on the semiconductor layer and the gate electrode and leaving a sidewall comprising the silicon nitride film on a side surface of the gate insulation film and the gate electrode by etching the silicon nitride film in a direction generally normal to the principal surface of the semiconductor layer. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate including a semiconductor layer; forming an interlayer insulation layer on the silicon nitride film; forming a layer having an opening on the interlayer insulation layer; and etching the interlayer insulation layer via the opening in a condition where an etching rate for the silicon nitride film is greater than an etching rate for the interlayer insulation layer.
摘要翻译：形成氮化硅膜的方法包括：通过将含有硅和氮的第一气体和含有氮和氢的第二气体施加到在减压气氛中加热的催化剂来形成氮化硅膜。一种制造半导体器件的方法，包括以下步骤：通过权利要求1所述的方法在具有半导体层的衬底上形成氮化硅膜，选择性地设置在半导体层的主表面上的栅极绝缘膜，以及栅电极设在栅极绝缘膜上; 并且通过在大致垂直于所述主体的方向上蚀刻所述氮化硅膜，在所述半导体层和所述栅电极上除去所述栅极绝缘膜和所述栅电极的侧表面上的包含所述氮化硅膜的侧壁半导体层的表面。一种制造半导体器件的方法，包括以下步骤：通过权利要求1所述的方法在包括半导体层的衬底上形成氮化硅膜; 在所述氮化硅膜上形成层间绝缘层; 在所述层间绝缘层上形成具有开口的层; 并且在氮化硅膜的蚀刻速率大于层间绝缘层的蚀刻速率的条件下，经由开口蚀刻层间绝缘层。

5. 发明申请

US20050064699A1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20050064699A1
公开(公告)日：2005-03-24
申请号：US10940820
申请日：2004-09-15
申请人： Seiichi Kondo , Kaori Misawa , Shunichi Tokitoh , Takashi Nasuno
发明人： Seiichi Kondo , Kaori Misawa , Shunichi Tokitoh , Takashi Nasuno
IPC分类号： H01L27/00 , H01L21/28 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/76826 , H01L21/02126 , H01L21/02137 , H01L21/02164 , H01L21/02167 , H01L21/022 , H01L21/02271 , H01L21/02282 , H01L21/02337 , H01L21/3124 , H01L21/3148 , H01L21/31633 , H01L21/318 , H01L21/76807 , H01L21/76828 , H01L21/76829 , H01L21/76835
摘要： A first CVD dielectric layer is deposited on a surface of a semiconductor substrate. Next, low-k layers are deposited in at least two different steps to form one of a via-layer dielectric film and a wiring-layer dielectric film on the first CVD dielectric layer. Immediately after the depositions, thermal treatment is performed. A second CVD dielectric layer is deposited on the low-k layers. A groove is formed in the second CVD dielectric layer and the low-k layers. A metal layer is deposited on that structure, filling the groove. The metal layer is removed from the second CVD dielectric layer by chemical mechanical polishing.
摘要翻译：第一CVD绝缘层沉积在半导体衬底的表面上。接下来，在至少两个不同的步骤中沉积低k层，以在第一CVD电介质层上形成通孔层电介质膜和布线层电介质膜之一。沉积后立即进行热处理。在低k层上沉积第二CVD介电层。在第二CVD介质层和低k层中形成凹槽。在该结构上沉积金属层，填充凹槽。金属层通过化学机械抛光从第二CVD介电层去除。

6. 发明申请

US20040259381A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20040259381A1
公开(公告)日：2004-12-23
申请号：US10867735
申请日：2004-06-16
申请人： Semiconductor Leading Edge Technologies, Inc.
发明人： Nobuyuki Ohtsuka , Akira Furuya , Shinichi Ogawa , Hiroshi Okamura
IPC分类号： H01L021/31 , H01L021/469
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/76807 , H01L21/7682 , H01L21/76826
摘要： In a method for manufacturing a semiconductor device, an insulating film having pores is formed on a substrate, and an opening is formed in the insulating film. Thereafter, a material gas supplying Si or C is supplied to the insulating film. Thereby, deficient elements, such as Si or C, are supplied to the insulating film. Thereafter, in the opening, including a barrier metal, is filled with a conductive member to form a wiring structure.
摘要翻译：在半导体装置的制造方法中，在基板上形成具有孔的绝缘膜，在绝缘膜上形成开口部。然后，向绝缘膜供给供给Si或C的原料气体。由此，向绝缘膜供给诸如Si或C的缺陷元素。此后，在包括阻挡金属的开口中，填充有导电构件以形成布线结构。

7. 发明申请

US20040150075A1 Semiconductor device with cupper wiring and method for manufacturing semiconductor device 审中-公开
标题翻译：具有铜线的半导体器件及半导体器件的制造方法
公开(公告)号：US20040150075A1
公开(公告)日：2004-08-05
申请号：US10735815
申请日：2003-12-16
申请人： Semiconductor Leading Edge Technologies, Inc.
发明人： Naruhiko Kaji
IPC分类号： H01L023/58
CPC分类号： H01L21/31116 , H01L21/0212 , H01L21/02137 , H01L21/022 , H01L21/02203 , H01L21/02271 , H01L21/31138 , H01L21/31144 , H01L21/3127 , H01L21/76802 , H01L21/76831 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A porous MSQ is formed on a silicon substrate, and an SiC mask is formed thereon. Plasma etching using the SiC mask as a mask is performed to form a trench in the porous MSQ. A fluorinated polyxylilene film is formed on the entire surface of the substrate 1 including the side surfaces of the trench, and the unnecessary fluorinated polyxylilene film formed on the area other than the side surfaces of the trench is removed. A barrier-metal film and a seed Cu layer are formed in the trench and a Cu is deposited.
摘要翻译：在硅衬底上形成多孔MSQ，并在其上形成SiC掩模。使用SiC掩模作为掩模进行等离子体蚀刻，以在多孔MSQ中形成沟槽。在包括沟槽的侧表面的基板1的整个表面上形成氟化聚氯乙烯膜，除去形成在沟槽的侧表面以外的区域上的不需要的氟化聚亚甲基薄膜。在沟槽中形成阻挡金属膜和种子Cu层，并沉积Cu。

8. 发明申请

US20030031537A1 Load port, wafer processing apparatus, and method of replacing atmosphere 有权
标题翻译：负载端口，晶圆处理装置以及更换气氛的方法
公开(公告)号：US20030031537A1
公开(公告)日：2003-02-13
申请号：US10207011
申请日：2002-07-30
申请人： SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.
发明人： Kenji Tokunaga
IPC分类号： B65G049/07
CPC分类号： H01L21/67772
摘要： Atmosphere inside a wafer carrier is purged through an open face of the wafer carrier, in the state where a carrier door constituting a face of the wafer carrier is opened by a load port door. Purging is carried out by partitioning a mini-environment with an upper wall surface, a lower wall surface, and an EFEM door into a predetermined space adjacent to the open face, by discharging gas from the predetermined space through an exhaust opening, and by supplying an inert gas or a dry air from a gas supply port into the predetermined space.
摘要翻译：在构成晶片载体的表面的载体门被负载端口打开的状态下，通过晶片载体的开放面来清除晶片载体内的气氛。通过将具有上壁表面，下壁表面和EFEM门的迷你环境分隔成与开放面相邻的预定空间，通过排出口从预定空间排出气体，并通过供给惰性气体或从气体供应口进入预定空间的干燥空气。

9. 发明申请

US20020094688A1 Method of forming fine patterns 有权
标题翻译：形成精细图案的方法
公开(公告)号：US20020094688A1
公开(公告)日：2002-07-18
申请号：US10023847
申请日：2001-12-21
申请人： SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.
发明人： Akira Mitsuiki
IPC分类号： H01L021/311
CPC分类号： H01L21/32139 , H01L21/32137
摘要： A resist pattern is formed on a film to be processed using a lithography technique. The line width of the resist pattern is narrowed using a slimming technique. Thereafter, the pattern of a first film to be processed is formed in the space that has been widened by slimming, utilizing the phenomenon in which anisotropic etching under a reduced pressure accelerates the etching rate in the vicinity of the side of the line of the pattern compared to other areas. An underlying second film to be processed is etched using the first film to be processed as a mask. Thereby the pattern of the second film to be processed that has a pitch null the lithography pattern is formed.
摘要翻译：使用光刻技术在待加工的膜上形成抗蚀剂图案。使用减肥技术使抗蚀剂图案的线宽变窄。此后，通过减肥加宽加工的空间，形成第一被处理膜的图案，利用减压下的各向异性蚀刻加速图案线侧附近的蚀刻速度的现象与其他地区相比。使用待处理的第一膜作为掩模蚀刻待处理的下层第二膜。从而形成具有光刻图案间距1/2的待处理第二膜的图案。

10. 发明申请

US20060022228A1 Method of manufacturing silicon nitride film, method of manufacturing semiconductor device, and semiconductor device 审中-公开
标题翻译：氮化硅膜的制造方法，半导体装置的制造方法以及半导体装置
公开(公告)号：US20060022228A1
公开(公告)日：2006-02-02
申请号：US11038165
申请日：2005-01-21
申请人： Takeshi Hoshi , Tsuyoshi Saito , Hitoshi Kato , Koichi Orito
发明人： Takeshi Hoshi , Tsuyoshi Saito , Hitoshi Kato , Koichi Orito
IPC分类号： H01L29/78 , H01L21/4763
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45527 , H01L21/02274 , H01L21/3185 , H01L21/76802 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L21/8238 , H01L21/823864 , H01L29/6659 , H01L29/7833
摘要： A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.
摘要翻译：制造在衬底表面上形成氮化硅膜的氮化硅膜的方法包括顺序地重复第一至第三步骤。第一步包括将含有硅和氮的第一气体进料到基材的表面。第二步骤包括将含有氮气的第二气体进料到基材的表面。第三步骤包括将含有氢的第三气体进料到基材的表面。

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