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1. 发明授权

US07125794B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07125794B2
公开(公告)日：2006-10-24
申请号：US10940820
申请日：2004-09-15
申请人： Seiichi Kondo , Kaori Misawa , Shunichi Tokitoh , Takashi Nasuno
发明人： Seiichi Kondo , Kaori Misawa , Shunichi Tokitoh , Takashi Nasuno
IPC分类号： H01L21/4763 , H01L21/312 , H01L21/469
CPC分类号： H01L21/76826 , H01L21/02126 , H01L21/02137 , H01L21/02164 , H01L21/02167 , H01L21/022 , H01L21/02271 , H01L21/02282 , H01L21/02337 , H01L21/3124 , H01L21/3148 , H01L21/31633 , H01L21/318 , H01L21/76807 , H01L21/76828 , H01L21/76829 , H01L21/76835
摘要： A first CVD dielectric layer is deposited on a surface of a semiconductor substrate. Next, low-k layers are deposited in at least two different steps to form one of a via-layer dielectric film and a wiring-layer dielectric film on the first CVD dielectric layer. Immediately after the depositions, thermal treatment is performed. A second CVD dielectric layer is deposited on the low-k layers. A groove is formed in the second CVD dielectric layer and the low-k layers. A metal layer is deposited on that structure, filling the groove. The metal layer is removed from the second CVD dielectric layer by chemical mechanical polishing.
摘要翻译：第一CVD绝缘层沉积在半导体衬底的表面上。接下来，在至少两个不同的步骤中沉积低k层，以在第一CVD电介质层上形成通孔层电介质膜和布线层电介质膜之一。沉积后立即进行热处理。在低k层上沉积第二CVD介电层。在第二CVD介质层和低k层中形成凹槽。在该结构上沉积金属层，填充凹槽。金属层通过化学机械抛光从第二CVD介电层去除。

2. 发明申请

US20050064699A1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20050064699A1
公开(公告)日：2005-03-24
申请号：US10940820
申请日：2004-09-15
申请人： Seiichi Kondo , Kaori Misawa , Shunichi Tokitoh , Takashi Nasuno
发明人： Seiichi Kondo , Kaori Misawa , Shunichi Tokitoh , Takashi Nasuno
IPC分类号： H01L27/00 , H01L21/28 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/76826 , H01L21/02126 , H01L21/02137 , H01L21/02164 , H01L21/02167 , H01L21/022 , H01L21/02271 , H01L21/02282 , H01L21/02337 , H01L21/3124 , H01L21/3148 , H01L21/31633 , H01L21/318 , H01L21/76807 , H01L21/76828 , H01L21/76829 , H01L21/76835
摘要： A first CVD dielectric layer is deposited on a surface of a semiconductor substrate. Next, low-k layers are deposited in at least two different steps to form one of a via-layer dielectric film and a wiring-layer dielectric film on the first CVD dielectric layer. Immediately after the depositions, thermal treatment is performed. A second CVD dielectric layer is deposited on the low-k layers. A groove is formed in the second CVD dielectric layer and the low-k layers. A metal layer is deposited on that structure, filling the groove. The metal layer is removed from the second CVD dielectric layer by chemical mechanical polishing.
摘要翻译：第一CVD绝缘层沉积在半导体衬底的表面上。接下来，在至少两个不同的步骤中沉积低k层，以在第一CVD电介质层上形成通孔层电介质膜和布线层电介质膜之一。沉积后立即进行热处理。在低k层上沉积第二CVD介电层。在第二CVD介质层和低k层中形成凹槽。在该结构上沉积金属层，填充凹槽。金属层通过化学机械抛光从第二CVD介电层去除。

3. 发明申请

US20050170641A1 Multilayered wiring structure, method of forming buried wiring, semiconductor device, method of manufacturing semiconductor device, semiconductor mounted device, and method of manufacturing semiconductor mounted device 审中-公开
标题翻译：多层布线结构，掩埋布线的形成方法，半导体器件，半导体器件的制造方法，半导体安装器件以及制造半导体安装器件的方法
公开(公告)号：US20050170641A1
公开(公告)日：2005-08-04
申请号：US11014883
申请日：2004-12-20
申请人： Seiichi Kondo , Kaori Misawa
发明人： Seiichi Kondo , Kaori Misawa
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/768 , H01L23/532
CPC分类号： H01L21/7684 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a buried wiring in a low-k dielectric film, includes: forming a low-k dielectric film having a dielectric constant of 3 or less on an underlayer; removing the low-k dielectric film by a first width from an edge of the underlayer; forming a cap film on the low-k dielectric film, after removing the low-k dielectric film by the first width; forming a groove in the cap film and the low-k dielectric film; forming a conductive film in the groove and on the cap film; removing the conductive film by a second width, different from the first width by 1 mm or more, from the edge of the underlayer; and polishing unnecessary portions of the conductive film on the cap film, after removing the conductive film by the second width.
摘要翻译：在低k电介质膜中形成掩埋布线的方法包括：在底层上形成介电常数为3以下的低k电介质膜; 从底层的边缘去除第一宽度的低k电介质膜; 在将低k电介质膜除去第一宽度之后，在低k电介质膜上形成盖膜; 在盖膜和低k电介质膜中形成凹槽; 在槽和盖膜中形成导电膜; 从所述底层的边缘除去所述导电膜的距离不同于所述第一宽度1mm以上的第二宽度; 并且在将导电膜除去第二宽度之后，在盖膜上抛光导电膜的不需要的部分。

4. 发明申请

US20080260156A1 Management Service Device, Backup Service Device, Communication Terminal Device, and Storage Medium 审中-公开
标题翻译：管理服务设备，备份服务设备，通信终端设备和存储介质
公开(公告)号：US20080260156A1
公开(公告)日：2008-10-23
申请号：US11660105
申请日：2004-08-19
申请人： Akihiro Baba , Shouji Sakurai , Seiichi Kondo , Tatsuji Munaka , Mariko Sawamura
发明人： Akihiro Baba , Shouji Sakurai , Seiichi Kondo , Tatsuji Munaka , Mariko Sawamura
IPC分类号： H04L9/06 , G06F21/00
CPC分类号： G06F21/6209 , G06F11/1458 , G06F11/1464 , G06F11/1469 , G06F21/34 , G06F21/88 , G06F2221/2103 , G06F2221/2129
摘要： It is an object to provide a method for invalidation and new registration of a storage medium, a method for backup of data stored in a storage medium and for restoration of backup data to a storage medium, and a method for encryption of and application of an electronic signature to data to be backed up, and for decryption of backup data to be restored and verification of a signature. A service device includes a reception unit for receiving a request for data processing regarding a storage medium from a communication terminal device connected to the storage medium, an authentication unit for performing authentication of whether or not the storage medium connected to the communication terminal device is valid, and a database for storing a public key of the storage medium, wherein, when the reception unit receives a request for invalidation of the first storage medium from the communication terminal device, and the authentication unit authenticates the second storage medium connected to the communication terminal device as a valid storage medium, the database deletes the public key of the first storage medium stored in the database.
摘要翻译：本发明的目的是提供一种用于存储介质的无效和新的注册的方法，用于备份存储在存储介质中的数据的方法以及用于将备份数据恢复到存储介质的方法，以及用于对存储介质进行加密和应用的方法对要备份的数据进行电子签名，以及解密要恢复的备份数据和签名的验证。服务设备包括：接收单元，用于从连接到存储介质的通信终端设备接收关于存储介质的数据处理的请求;认证单元，用于执行与通信终端设备连接的存储介质是否有效的认证以及用于存储所述存储介质的公开密钥的数据库，其中，当所述接收单元从所述通信终端设备接收到所述第一存储介质的无效请求时，所述认证单元认证连接到所述通信终端的所述第二存储介质设备作为有效的存储介质，数据库删除存储在数据库中的第一个存储介质的公开密钥。

5. 发明申请

US20080233736A1 PROCESS FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：制造半导体集成电路器件的工艺
公开(公告)号：US20080233736A1
公开(公告)日：2008-09-25
申请号：US12127564
申请日：2008-05-27
申请人： Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人： Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号： H01L21/4763
CPC分类号： H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要： In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
摘要翻译：为了提供通过化学机械抛光（CMP）方法形成的金属配线的防腐蚀技术，根据本发明的半导体集成电路器件的制造方法包括以下步骤：形成Cu（或Cu合金）的金属层含有Cu作为主要成分），然后通过化学机械抛光（CMP）方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态，使其不会变干; 并将晶片的主要表面保持在潮湿状态。

6. 发明授权

US07183212B2 Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device 有权
标题翻译：抛光方法，金属化制造方法，制造半导体器件和半导体器件的方法
公开(公告)号：US07183212B2
公开(公告)日：2007-02-27
申请号：US10898252
申请日：2004-07-26
申请人： Seiichi Kondo , Masaaki Fujimori , Noriyuki Sakuma , Yoshio Homma
发明人： Seiichi Kondo , Masaaki Fujimori , Noriyuki Sakuma , Yoshio Homma
IPC分类号： H01L21/302
CPC分类号： C23F1/18 , C09G1/04 , C23F3/06 , H01L21/3212 , H01L21/7684
摘要： Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.
摘要翻译：描述了适用于电子电路器件的多层金属化的抛光技术，其包括用包含氧化物质，磷酸和保护层形成剂的抛光液抛光金属膜。本发明能够在抑制划痕，分层，凹陷或侵蚀的发生的同时以高的去除率对金属膜进行研磨。

7. 发明申请

US20060141792A1 Process for manufacturing semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件制造工艺
公开(公告)号：US20060141792A1
公开(公告)日：2006-06-29
申请号：US11357181
申请日：2006-02-21
申请人： Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人： Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号： H01L21/44
CPC分类号： H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要： In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP). method, a process for manufacturing. a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
摘要翻译：为了提供通过化学机械抛光（CMP）形成的金属配线的防腐蚀技术。方法，制造方法。根据本发明的半导体集成电路器件包括以下步骤：在晶片的主面上形成Cu（或含有Cu作为主要成分的Cu合金）的金属层，然后通过化学机械抛光使金属层平坦化（CMP）方法形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态，使其不会变干; 并将晶片的主要表面保持在潮湿状态。

8. 发明授权

US06800557B2 Process for manufacturing semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件制造工艺
公开(公告)号：US06800557B2
公开(公告)日：2004-10-05
申请号：US10369716
申请日：2003-02-21
申请人： Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人： Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号： H01L21302
CPC分类号： H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要： In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
摘要翻译：为了提供通过化学机械抛光（CMP）方法形成的金属配线的防腐蚀技术，根据本发明的半导体集成电路器件的制造方法包括以下步骤：形成Cu（或Cu合金）的金属层含有Cu作为主要成分），然后通过化学机械抛光（CMP）方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态，使其不会变干; 并将晶片的主要表面保持在潮湿状态。

9. 发明授权

US06750128B2 Methods of polishing, interconnect-fabrication, and producing semiconductor devices 失效
标题翻译：抛光，互连制造和制造半导体器件的方法
公开(公告)号：US06750128B2
公开(公告)日：2004-06-15
申请号：US10396410
申请日：2003-03-26
申请人： Seiichi Kondo , Noriyuki Sakuma , Yoshio Homma
发明人： Seiichi Kondo , Noriyuki Sakuma , Yoshio Homma
IPC分类号： H01L213205
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , H01L21/7684
摘要： The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.
摘要翻译：本发明提供减少和抑制划痕和分层，抑制和控制凹陷和侵蚀的发展并以高抛光速率抛光的技术。使用包含氧化剂，磷酸，有机酸，形成抑制层的化学品和水的抛光溶液进行抛光。

10. 发明授权

US06596638B1 Polishing method 有权
标题翻译：抛光方法
公开(公告)号：US06596638B1
公开(公告)日：2003-07-22
申请号：US09618999
申请日：2000-07-18
申请人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
发明人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
IPC分类号： H01L21302
CPC分类号： C23F3/06 , B24B37/04 , C09G1/02 , C09K3/1463 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A metal film formed on an insulating film having a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
摘要翻译：抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁处理和浆料供应/处理设备，并且消耗品如浆料和抛光垫的成本降低。在具有凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物水溶性但不含抛光磨料的物质的抛光溶液抛光。

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