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1. 发明申请

US20080099441A1 APPARATUS AND METHOD FOR REACTIVE ATOM PLASMA PROCESSING FOR MATERIAL DEPOSITION 有权
标题翻译：用于材料沉积的反应性原子等离子体处理的装置和方法
公开(公告)号：US20080099441A1
公开(公告)日：2008-05-01
申请号：US11962012
申请日：2007-12-20
申请人： Jeffrey Carr
发明人： Jeffrey Carr
IPC分类号： B44C1/22 , H01L21/3065 , H01L21/465
CPC分类号： H01J37/32376 , C23C16/0245 , C23C16/047 , C23C16/513 , H01L21/31051 , H05H1/30
摘要： A method for shaping a surface of a workpiece, comprises positioning at least one of a workpiece and an inductively-coupled plasma (ICP) torch including three concentrically arranged tubes. A plasma gas is introduced to an outer tube of the ICP torch and energy is transferred from a radio frequency (RF) power source to the plasma gas to generate an excitation zone at least partially downstream of the ICP torch. A reactive reactive precursor is introduced to the excitation zone, and an auxiliary gas is introduced to the intermediate tube to control a position of the excitation zone relative to the ICP torch so that a controlled distribution of reactive species is formed. The surface is shaped by removing material from the surface of the workpiece with at least a portion of the reactive species and adding material to the surface of the workpiece with at least a portion of the reactive species.
摘要翻译：一种用于成形工件表面的方法，包括定位工件和包括三个同心布置的管的感应耦合等离子体（炬）手电筒中的至少一个。将等离子体气体引入ICP喷枪的外管，并且能量从射频（RF）电源传送到等离子体气体，以在ICP焊枪的至少部分的下游产生激发区域。将反应性反应性前体引入激发区，并且将辅助气体引入中间管以控制激发区相对于ICP炬的位置，从而形成受控分布的反应性物质。通过用至少一部分反应性物质从工件的表面除去材料并且用至少一部分反应性物质将材料添加到工件的表面来成形该表面。

2. 发明授权

US07304263B2 Systems and methods utilizing an aperture with a reactive atom plasma torch 有权
标题翻译：使用具有反应性原子等离子体焰炬的孔的系统和方法
公开(公告)号：US07304263B2
公开(公告)日：2007-12-04
申请号：US10911821
申请日：2004-08-05
申请人： Andrew Chang , Jeffrey W. Carr , Jude Kelley , Peter S. Fiske
发明人： Andrew Chang , Jeffrey W. Carr , Jude Kelley , Peter S. Fiske
IPC分类号： B23K9/00
CPC分类号： H05H1/30
摘要： The footprint of a reactive atom plasma processing tool can be modified using an aperture device. A flow of reactive gas can be injected into the center of an annular plasma. An aperture can be positioned relative to the plasma such that the effective footprint of the plasma can be changed without adjusting the gas flows or swapping out the tool. Once the aperture and tool are in position relative to a workpiece, reactive atom plasma processing can be used to modify the surface of the workpiece, such as to etch, smooth, polish, clean, and/or deposit material onto the workpiece. If necessary, a coolant can be circulated about the aperture. Multiple apertures can also be used to provide a variety of footprint sizes and/or shapes. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
摘要翻译：可以使用孔径装置修改反应性原子等离子体处理工具的占地面积。反应气体流可以注入环形等离子体的中心。可以相对于等离子体定位孔，使得等离子体的有效占地面积可以在不调节气流或换出工具的情况下改变。一旦孔和工具相对于工件就位，反应性原子等离子体处理可用于改变工件的表面，例如蚀刻，光滑，抛光，清洁和/或沉积材料到工件上。如果需要，可以在孔周围循环冷却剂。也可以使用多个孔来提供各种尺寸和/或形状。本说明书不是对本发明的完整描述或限制本发明的范围。本发明的其它特征，方面和目的可以通过对说明书，附图和权利要求的评述来获得。

3. 发明申请

US20040200802A1 Apparatus and method for reactive atom plasma processing for material deposition 有权
标题翻译：用于材料沉积的反应性原子等离子体处理的装置和方法
公开(公告)号：US20040200802A1
公开(公告)日：2004-10-14
申请号：US10608384
申请日：2003-06-27
申请人： RAPT. INDUSTRIES INC.
发明人： Jeffrey W. Carr
IPC分类号： B44C001/22
CPC分类号： H01J37/32376 , C23C16/0245 , C23C16/047 , C23C16/513 , H01L21/31051 , H05H1/30
摘要： Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, clean and/or deposit material on the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from, and/or redistributing material on, the surface of the workpiece. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
摘要翻译：反应性原子等离子体处理可用于以最小的地下损伤来形成，抛光，平坦化和清洁困难材料的表面。该装置和方法使用诸如常规ICP喷枪的等离子体焰炬。无论是通过平移和/或旋转工件，等离子体还是两者，工件和等离子体焰炬相对于彼此移动。来自焊炬的等离子体放电可以用于在工件的表面上成形，平坦化，抛光，清洁和/或沉积材料，以及使工件变薄。该加工可能对表面下方的工件造成最小或不损坏，并且可能涉及从工件的表面上移除材料和/或重新分布材料。本说明书不是对本发明的完整描述或限制本发明的范围。本发明的其它特征，方面和目的可以通过对说明书，附图和权利要求的评述来获得。

4. 发明授权

US07591957B2 Method for atmospheric pressure reactive atom plasma processing for surface modification 有权
标题翻译：用于表面改性的大气压反应原子等离子体处理方法
公开(公告)号：US07591957B2
公开(公告)日：2009-09-22
申请号：US10002483
申请日：2001-11-01
申请人： Jeffrey W. Carr
发明人： Jeffrey W. Carr
IPC分类号： B23K9/00 , H05B1/00 , H05B11/00
CPC分类号： H01L21/67092 , B23K1/206 , C03C15/00 , C04B41/53 , C04B41/91 , C23C16/047 , H05H1/30 , H05H2245/123
摘要： Reactive atom plasma processing can be used to shape, polish, planarize and clean the surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, and/or clean the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from the surface of the workpiece.
摘要翻译：反应性原子等离子体处理可以用最小的地下损伤来塑造，抛光，平坦化和清洁困难材料的表面。该装置和方法使用诸如常规ICP喷枪的等离子体焰炬。无论是通过平移和/或旋转工件，等离子体还是两者，工件和等离子体焰炬相对于彼此移动。来自焊炬的等离子体放电可用于成形，平坦化，抛光和/或清洁工件的表面，以及使工件变薄。该处理可能对表面下方的工件造成最小的损伤或没有损坏，并且可能涉及从工件的表面移除材料。

5. 发明申请

US20080035612A1 Systems and Methods Utilizing an Aperture with a Reactive Atom Plasma Torch 审中-公开
标题翻译：利用激光原子等离子体火炬的光圈的系统和方法
公开(公告)号：US20080035612A1
公开(公告)日：2008-02-14
申请号：US11875787
申请日：2007-10-19
申请人： Andrew Chang , Jeffrey Carr , Jude Kelley , Peter Fiske
发明人： Andrew Chang , Jeffrey Carr , Jude Kelley , Peter Fiske
IPC分类号： B23K10/00
CPC分类号： H05H1/30
摘要： A method for reducing heat applied to a workpiece by a plasma discharge of a reactive plasma torch comprises determining a footprint of the plasma discharge on a surface of the workpiece based on a distance of the reactive atom plasma torch from the surface, determining a maximum heat absorbable by the workpiece, and determining an adjusted footprint of the reactive atom plasma torch on the surface based on the maximum heat absorbable by the workpiece. An aperture of an aperture device is selected based on the adjusted footprint of the reactive atom plasma torch. The aperture device is then positioned so that a portion of the plasma is one or both of deflected and absorbed by the aperture device, thereby reducing the heat absorbed by the workpiece.
摘要翻译：通过反应等离子体焰炬的等离子体放电来减少施加到工件的热的方法包括基于反应性原子等离子体焰炬与表面的距离确定工件表面上的等离子体放电的占地面积，确定最大热量基于工件可吸收的最大热量，确定表面上的反应性原子等离子体焰炬的调整的占地面积。基于调整的反应原子等离子体焰炬的占地面积来选择孔径装置的孔径。孔径装置然后被定位成使得等离子体的一部分是由孔装置偏转和吸收的一个或两个，从而减少被工件吸收的热量。

6. 发明授权

US07297892B2 Systems and methods for laser-assisted plasma processing 有权
标题翻译：激光辅助等离子体处理的系统和方法
公开(公告)号：US07297892B2
公开(公告)日：2007-11-20
申请号：US10913739
申请日：2004-08-06
申请人： Jude Kelley , Jeffrey W. Carr , Peter S. Fiske
发明人： Jude Kelley , Jeffrey W. Carr , Peter S. Fiske
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： C04B41/009 , B08B7/0035 , C03C15/00 , C03C23/006 , C03C23/0075 , C04B41/5346 , C04B41/91 , G02B6/136 , H05H1/30 , C04B41/0036 , C04B35/14 , C04B35/565
摘要： A controllable heat source, such as a laser or flame torch, can be used to pre-heat a portion of the surface of a workpiece, such as a glass optic or semiconductor wafer. Reactive atom plasma (RAP) processing can be used to modify the pre-heated surface portion, as the pre-heated material will more readily chemically combine with the atomic radicals of the precursor in the plasma. A RAP torch, such as an ICP plasma torch, MIP plasma torch, or flame torch, can be used to shape, polish, etch, planarize, deposit, chemically modify and/or redistribute material on the surface of the workpiece. The material modified by the torch can substantially correspond to the pattern or portion of the surface that was pre-heated by the heat source. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
摘要翻译：可以使用诸如激光或火焰焰炬的可控热源来预热工件表面的一部分，例如玻璃光学或半导体晶片。可以使用反应性原子等离子体（RAP）处理来改变预加热的表面部分，因为预热的材料将更容易地与等离子体中的前体的原子基团化学结合。可以使用RAP手电筒，例如ICP等离子体焰炬，MIP等离子体焰炬或火焰焰炬来对工件表面上的材料进行成形，抛光，蚀刻，平面化，沉积，化学修饰和/或重新分布。通过焊炬改性的材料可以基本上对应于由热源预热的表面的图案或部分。本说明书不是对本发明的完整描述或限制本发明的范围。本发明的其它特征，方面和目的可以通过对说明书，附图和权利要求的评述来获得。

7. 发明申请

US20050184034A1 Method for using a microwave source for reactive atom-plasma processing 审中-公开
标题翻译：使用微波源进行反应性原子 - 等离子体处理的方法
公开(公告)号：US20050184034A1
公开(公告)日：2005-08-25
申请号：US11089966
申请日：2005-03-25
申请人： Jeffrey Carr
发明人： Jeffrey Carr
IPC分类号： C23C16/511 , C23C16/513 , H01L21/00 , H05H1/30 , B23K9/00
CPC分类号： H01L21/67069 , C23C16/511 , C23C16/513 , H01J37/32192 , H01J37/32357 , H05H1/30
摘要： Reactive atom plasma processing (RAP) can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. An improved RAP device utilizes a microwave-induced plasma (MIP) source instead of a conventional ICP torch to modify these surfaces. The use of MIP provides for a smaller footprint, finer detail, simpler and enhanced movement capabilities, lower heat load, fewer shielding requirements, and cheaper construction and operation than ICP. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
摘要翻译：反应性原子等离子体处理（RAP）可以用最小的表面下损伤来塑造，抛光，平面化和清洁困难材料的表面。改进的RAP装置利用微波诱导等离子体（MIP）源而不是传统的ICP手电筒来改变这些表面。与ICP相比，使用MIP可提供更小的占地面积，更细的细节，更简单和更强大的移动能力，更低的热负荷，更少的屏蔽要求，更便宜的构造和操作。本说明书不是对本发明的完整描述或限制本发明的范围。本发明的其它特征，方面和目的可以通过对说明书，附图和权利要求的评述来获得。

8. 发明授权

US07371992B2 Method for non-contact cleaning of a surface 失效
标题翻译：表面非接触清洁方法
公开(公告)号：US07371992B2
公开(公告)日：2008-05-13
申请号：US10384506
申请日：2003-03-07
申请人： Jeffrey W. Carr
发明人： Jeffrey W. Carr
IPC分类号： B23K10/06
CPC分类号： H01L21/02046 , B08B7/0035 , C03C23/007 , C03C23/0075 , G03F1/82 , H01L21/3065 , H01L21/67028 , H05H1/30
摘要： A flame torch can be used to clean the surface of a contact-sensitive object, such as a glass optic, extremely thin workpiece, or semiconductor wafer by providing a reactive precursor gas to the feed gases of the torch. Reactive atom plasma processing can be used to clean the surface of a contaminant that chemically combines with the atomic radicals of the precursor without affecting the surface. The torch can also be used to modify the surface after cleaning, without transferring the object or engaging in any intermediate processing, by supplying a second reactive precursor that reacts with the surface itself. The flame torch can be used to shape, polish, etch, planarize, deposit, chemically modify and/or redistribute material on the surface of the object.This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
摘要翻译：火焰焰炬可用于通过向火炬的进料气体提供反应性前体气体来清洁诸如玻璃光学元件，极薄工件或半导体晶片的接触敏感物体的表面。反应性原子等离子体处理可用于清洁与前体的原子自由基化学结合而不影响表面的污染物的表面。通过提供与表面本身反应的第二反应性前体，手电筒也可用于在清洁之后改变表面，而不转移物体或进行任何中间加工。火焰焰炬可用于在物体的表面上成形，抛光，蚀刻，平面化，沉积，化学修饰和/或重新分布材料。本说明书不是对本发明的完整描述或限制本发明的范围。本发明的其它特征，方面和目的可以通过对说明书，附图和权利要求的评述来获得。

9. 发明授权

US07311851B2 Apparatus and method for reactive atom plasma processing for material deposition 有权
标题翻译：用于材料沉积的反应性原子等离子体处理的装置和方法
公开(公告)号：US07311851B2
公开(公告)日：2007-12-25
申请号：US10608384
申请日：2003-06-27
申请人： Jeffrey W. Carr
发明人： Jeffrey W. Carr
IPC分类号： B44C1/22
CPC分类号： H01J37/32376 , C23C16/0245 , C23C16/047 , C23C16/513 , H01L21/31051 , H05H1/30
摘要： Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, clean and/or deposit material on the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from, and/or redistributing material on, the surface of the workpiece.This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
摘要翻译：反应性原子等离子体处理可用于以最小的地下损伤来形成，抛光，平坦化和清洁困难材料的表面。该装置和方法使用诸如常规ICP喷枪的等离子体焰炬。无论是通过平移和/或旋转工件，等离子体还是两者，工件和等离子体焰炬相对于彼此移动。来自焊炬的等离子体放电可以用于在工件的表面上成形，平坦化，抛光，清洁和/或沉积材料，以及使工件变薄。该加工可能对表面下方的工件造成最小或不损坏，并且可能涉及从工件的表面上移除材料和/或重新分布材料。本说明书不是对本发明的完整描述或限制本发明的范围。本发明的其它特征，方面和目的可以通过对说明书，附图和权利要求的评述来获得。

10. 发明申请

US20050061783A1 Systems and methods for laser-assisted plasma processing 有权
标题翻译：激光辅助等离子体处理的系统和方法
公开(公告)号：US20050061783A1
公开(公告)日：2005-03-24
申请号：US10913739
申请日：2004-08-06
申请人： Jude Kelley , Jeffrey Carr , Peter Fiske
发明人： Jude Kelley , Jeffrey Carr , Peter Fiske
IPC分类号： B08B7/00 , C03C15/00 , C03C23/00 , C04B41/53 , C04B41/91 , G02B6/136 , H05H1/30 , B23K10/00
CPC分类号： C04B41/009 , B08B7/0035 , C03C15/00 , C03C23/006 , C03C23/0075 , C04B41/5346 , C04B41/91 , G02B6/136 , H05H1/30 , C04B41/0036 , C04B35/14 , C04B35/565
摘要： A controllable heat source, such as a laser or flame torch, can be used to pre-heat a portion of the surface of a workpiece, such as a glass optic or semiconductor wafer. Reactive atom plasma (RAP) processing can be used to modify the pre-heated surface portion, as the pre-heated material will more readily chemically combine with the atomic radicals of the precursor in the plasma. A RAP torch, such as an ICP plasma torch, MIP plasma torch, or flame torch, can be used to shape, polish, etch, planarize, deposit, chemically modify and/or redistribute material on the surface of the workpiece. The material modified by the torch can substantially correspond to the pattern or portion of the surface that was pre-heated by the heat source. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
摘要翻译：可以使用诸如激光或火焰焰炬的可控热源来预热工件表面的一部分，例如玻璃光学或半导体晶片。可以使用反应性原子等离子体（RAP）处理来改变预加热的表面部分，因为预热的材料将更容易地与等离子体中的前体的原子基团化学结合。可以使用RAP手电筒，例如ICP等离子体焰炬，MIP等离子体焰炬或火焰焰炬，来对工件表面上的材料进行成形，抛光，蚀刻，平面化，沉积，化学修饰和/或重新分布。通过焊炬改性的材料可以基本上对应于由热源预热的表面的图案或部分。本说明书不是对本发明的完整描述或限制本发明的范围。本发明的其它特征，方面和目的可以通过对说明书，附图和权利要求的评述来获得。

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