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    • 1. 发明授权
    • Microwave heating apparatus for reducing high-frequency in an electric
power circuit
    • 微波加热装置,用于降低电力电路中的高频
    • US5639395A
    • 1997-06-17
    • US558522
    • 1995-11-16
    • Ki-Yeoung Lee
    • Ki-Yeoung Lee
    • H02M7/537H05B6/66H05B6/68
    • H05B6/666H02M7/537
    • A microwave heating apparatus is disclosed. The microwave heating apparatus includes: a rectifying section for rectifying an AC current; an inverting section for being turned on/off by the driving signals of a driving section to generate high frequency voltages corresponding to the output signals of the rectifying section; a microwave generating section for receiving the output signals of the inverting section to generate microwaves; a synchronization detecting section for detecting synchronizing signals from the output signals of the inverting section; and a flip flop for being set and reset by the output signals of the synchronization detecting section to control the driving section. The apparatus of the present invention further includes a synchronization control section disposed between the synchronization detecting section and the flip flop, so that the synchronization control section can detect the period of the output signals of the synchronization detecting section to compare it with a reference value so as to reset the flip flop upon encountering a period smaller than the reference value, and so as to prevent the driving section from driving the inverting section.
    • 公开了一种微波加热装置。 微波加热装置包括:整流部分,用于整流交流电流; 反转部分,用于通过驱动部分的驱动信号导通/关断,以产生对应于整流部分的输出信号的高频电压; 微波产生部分,用于接收反相部分的输出信号以产生微波; 同步检测部分,用于检测来自反相部分的输出信号的同步信号; 以及触发器,用于通过同步检测部分的输出信号进行设置和复位,以控制驱动部分。 本发明的装置还包括设置在同步检测部分和触发器之间的同步控制部分,使得同步控制部分可以检测同步检测部分的输出信号的周期,以将其与参考值进行比较 以便在遇到小于参考值的时间段时复位触发器,并且防止驱动部分驱动翻转部分。
    • 2. 发明授权
    • Method for forming TiN film and TiN film/thin TiSi.sub.2 film, and
method for fabricating semiconductor element utilizing the same
    • 用于形成TiN膜和TiN膜/薄TiSi2膜的方法以及利用其制造半导体元件的方法
    • US5597745A
    • 1997-01-28
    • US423916
    • 1995-04-17
    • Jeong S. ByunHak N. Kim
    • Jeong S. ByunHak N. Kim
    • C23C14/06C23C14/08C23C14/34C23C14/58H01L21/203H01L21/28H01L21/285H01L21/768H01L21/822H01L27/04H01L21/283H01L21/336
    • H01L21/76843H01L21/28061H01L21/28518H01L21/2855H01L21/76838
    • A method for forming a fine-textured titanium nitride film and fine-textured titanium nitride/thin titanium silicide films, and methods for fabricating semiconductor elements utilizing the same are disclosed. A thin titanium silicide film and a fine-textured nitride film are formed on a semiconductor substrate through depositing a titanium film containing nitrogen on the semiconductor substrate by sputtering a titanium target having a titanium nitride film formed thereon and quenching. A bit line of a COB DRAM element may be formed of tungsten, and a tungsten bit line having good contact characteristics and preserved barrier characteristics can be formed since the fine-textured titanium nitride/thin titanium silicide films may serve as a barrier preventing the tungsten from diffusing at high temperature during subsequent capacitor forming processes. The fine-textured titanium nitride/thin titanium silicide films may be applied to an aluminum wiring, and the titanium silicide formed at the contact part may improve the contact characteristics, and TiAl.sub.3 formed between the titanium nitride film and the aluminum wiring may improve the electromigration characteristics of the metal wiring.
    • 公开了一种用于形成细纹理氮化钛膜和细纹织氮化钛/薄钛硅化物膜的方法,以及利用其制造半导体元件的方法。 通过溅射其上形成有氮化钛膜的钛靶并淬火,在半导体衬底上沉积含有氮的钛膜,在半导体衬底上形成薄的硅化钛膜和细纹理氮化物膜。 COB DRAM元件的位线可以由钨形成,并且可以形成具有良好的接触特性和保存的阻挡特性的钨位线,因为细纹理的氮化钛/薄的硅化钛膜可以用作防止钨 在随后的电容器形成过程中在高温下扩散。 可以将微细化的氮化钛/薄钛硅化物膜施加到铝布线,并且形成在接触部分处的硅化钛可以改善接触特性,并且形成在氮化钛膜和铝布线之间的TiAl 3可以改善电迁移 金属布线的特点。
    • 5. 发明授权
    • Reference voltage generating circuit having a power conserving start-up
circuit
    • 具有省电启动电路的基准电压发生电路
    • US5565811A
    • 1996-10-15
    • US388074
    • 1995-02-14
    • Jong-Hoon ParkYoung-Keun Choi
    • Jong-Hoon ParkYoung-Keun Choi
    • G05F3/24G11C11/407G05F3/02
    • G05F3/247
    • A power conserving circuit is disclosed which has a start-up circuit for initiating operation of a reference voltage generator. Included are a sensing circuit for producing a pulse signal in response to initial application of an external power source; a reference voltage generator for producing a constant reference voltage independent from an external power source voltage; and a start-up circuit for starting operation of the reference voltage generator during an interval of a pulse produced by the sensing circuit. The start-up circuit includes a switch for connecting and disconnecting the external power source to the reference voltage output port, and a voltage reducing element connected between the switch and the reference voltage output port.
    • 公开了一种省电电路,其具有用于启动参考电压发生器的操作的启动电路。 包括响应于外部电源的初始应用产生脉冲信号的感测电路; 用于产生与外部电源电压无关的恒定参考电压的参考电压发生器; 以及用于在由感测电路产生的脉冲的间隔期间开始参考电压发生器的操作的启动电路。 启动电路包括用于将外部电源连接到参考电压输出端口的开关,以及连接在开关和参考电压输出端口之间的降压元件。