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1. 发明授权

US5597745A Method for forming TiN film and TiN film/thin TiSi.sub.2 film, and method for fabricating semiconductor element utilizing the same 失效
标题翻译：用于形成TiN膜和TiN膜/薄TiSi2膜的方法以及利用其制造半导体元件的方法
公开(公告)号：US5597745A
公开(公告)日：1997-01-28
申请号：US423916
申请日：1995-04-17
申请人： Jeong S. Byun , Hak N. Kim
发明人： Jeong S. Byun , Hak N. Kim
IPC分类号： C23C14/06 , C23C14/08 , C23C14/34 , C23C14/58 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/822 , H01L27/04 , H01L21/283 , H01L21/336
CPC分类号： H01L21/76843 , H01L21/28061 , H01L21/28518 , H01L21/2855 , H01L21/76838
摘要： A method for forming a fine-textured titanium nitride film and fine-textured titanium nitride/thin titanium silicide films, and methods for fabricating semiconductor elements utilizing the same are disclosed. A thin titanium silicide film and a fine-textured nitride film are formed on a semiconductor substrate through depositing a titanium film containing nitrogen on the semiconductor substrate by sputtering a titanium target having a titanium nitride film formed thereon and quenching. A bit line of a COB DRAM element may be formed of tungsten, and a tungsten bit line having good contact characteristics and preserved barrier characteristics can be formed since the fine-textured titanium nitride/thin titanium silicide films may serve as a barrier preventing the tungsten from diffusing at high temperature during subsequent capacitor forming processes. The fine-textured titanium nitride/thin titanium silicide films may be applied to an aluminum wiring, and the titanium silicide formed at the contact part may improve the contact characteristics, and TiAl.sub.3 formed between the titanium nitride film and the aluminum wiring may improve the electromigration characteristics of the metal wiring.
摘要翻译：公开了一种用于形成细纹理氮化钛膜和细纹织氮化钛/薄钛硅化物膜的方法，以及利用其制造半导体元件的方法。通过溅射其上形成有氮化钛膜的钛靶并淬火，在半导体衬底上沉积含有氮的钛膜，在半导体衬底上形成薄的硅化钛膜和细纹理氮化物膜。 COB DRAM元件的位线可以由钨形成，并且可以形成具有良好的接触特性和保存的阻挡特性的钨位线，因为细纹理的氮化钛/薄的硅化钛膜可以用作防止钨在随后的电容器形成过程中在高温下扩散。可以将微细化的氮化钛/薄钛硅化物膜施加到铝布线，并且形成在接触部分处的硅化钛可以改善接触特性，并且形成在氮化钛膜和铝布线之间的TiAl 3可以改善电迁移金属布线的特点。

2. 发明授权

US5607884A Method for fabricating MOS transistor having source/drain region of shallow junction and silicide film 失效
标题翻译：制造具有浅结的源/漏区和硅化物膜的MOS晶体管的方法
公开(公告)号：US5607884A
公开(公告)日：1997-03-04
申请号：US190664
申请日：1994-02-02
申请人： Jeong S. Byun
发明人： Jeong S. Byun
IPC分类号： H01L29/78 , H01L21/336 , H01L27/08 , H01L21/225 , H01L21/335
CPC分类号： H01L29/66575 , H01L29/665
摘要： A method for fabricating an MOS transistor having a source/drain region of shallow junction and a thin silicide film is disclosed. The present method takes advantage of the phase separation of the Ti-excessed titanium nitride film and is capable of forming a thin silicide film in a once metal thermal annealing process. The method employs dopant implant to the titanium nitride and silicide and thermal anneal for diffusion to form source and drain regions.
摘要翻译：公开了一种用于制造具有浅结的源极/漏极区域和薄的硅化物膜的MOS晶体管的方法。本方法利用了Ti-过量的氮化钛膜的相分离，并能够在一次金属热退火工艺中形成薄的硅化物膜。该方法使用氮化钛和硅化物的掺杂剂注入和用于扩散的热退火以形成源极和漏极区域。

3. 发明授权

US5604140A Method for forming fine titanium nitride film and method for fabricating semiconductor element using the same 失效
标题翻译：氮化钛薄膜的形成方法及使用其制造半导体元件的方法
公开(公告)号：US5604140A
公开(公告)日：1997-02-18
申请号：US443570
申请日：1995-05-22
申请人： Jeong S. Byun
发明人： Jeong S. Byun
IPC分类号： H01L21/28 , H01L21/768 , H01L21/8242 , H01L21/283 , H01L21/336
CPC分类号： H01L21/76856 , H01L21/28061 , H01L21/28088 , H01L21/76843 , H01L21/76855 , H01L27/10844
摘要： A method for forming a fine titanium nitride film and a method for fabricating a semiconductor element using this method. The method for forming a fine titanium nitride film includes the steps of depositing a titanium nitride film on a semiconductor substrate such as with a reactive sputtering method, introducing oxygen into the columnar structured grain boundaries of the titanium nitride film such as by exposing the titanium nitride film to atmosphere, depositing a titanium film on the titanium nitride film having oxygen stuffed therein, converting the titanium film into a fine titanium nitride film by subjecting the titanium film to two times of a heat treatment process. In case a COB DRAM element bit line is formed of tungsten, the fine titanium nitride film and the underlying oxygen-stuffed titanium nitride film, serving as barriers for preventing high temperature diffusion of the tungsten, allow a tungsten bit line having excellent contact and barrier properties. In case the fine titanium nitride film is used as an MOS transistor gate, a gate which can satisfy the thermal stability of a polysilicon as well as the low resistivity of a silicide may be obtained.
摘要翻译：一种用于形成微细氮化钛膜的方法和使用该方法制造半导体元件的方法。用于形成氮化钛微细薄膜的方法包括以下步骤：在半导体衬底上沉积氮化钛膜，例如用反应溅射法，将氧气引入氮化钛膜的柱状结晶晶界，例如通过使氮化钛薄膜到大气中，在其上填充有氧气的氮化钛膜上沉积钛膜，通过对钛膜进行两次热处理工艺，将钛膜转变成细钛酸锌膜。在COB DRAM元件位线由钨形成的情况下，用作防止钨的高温扩散的阻挡层的细氮化钛膜和下面的氧化氮化钛膜允许具有优异接触和阻挡层的钨丝线属性。在细氮化钛膜用作MOS晶体管栅极的情况下，可以获得能够满足多晶硅的热稳定性的栅极以及硅化物的低电阻率。

4. 发明授权

US5599734A Method for fabricating MOS transistor utilizing doped disposable layer 失效
标题翻译：使用掺杂一次性层制造MOS晶体管的方法
公开(公告)号：US5599734A
公开(公告)日：1997-02-04
申请号：US479047
申请日：1995-06-06
申请人： Jeong S. Byun , Sang J. Choi
发明人： Jeong S. Byun , Sang J. Choi
IPC分类号： H01L21/316 , H01L21/225 , H01L21/335 , H01L21/336 , H01L29/78
CPC分类号： H01L29/66575 , H01L21/2257 , Y10S148/144
摘要： A method for fabricating an MOS transistor includes the steps of forming a gate insulating layer on a substrate of a first conductivity-type, forming a gate on the gate insulating layer, forming a disposable layer over an entire surface of the substrate and the gate, the disposable layer having a first conductivity-type impurity and a second conductivity-type impurity of a higher concentration than that of the first conductivity-type impurity, and forming a source and drain area of the second conductivity-type impurity on the substrate by diffusing the second conductivity-type impurity of the disposable layer into the substrate by means of an annealing process, wherein the disposable layer includes a BPSG layer, wherein the BPSG layer is a B+PSG layer which is doped with a higher dopant concentration of boron than that of phosphorus to make a p-type MOS transistor.
摘要翻译：一种用于制造MOS晶体管的方法包括以下步骤：在第一导电类型的衬底上形成栅极绝缘层，在栅绝缘层上形成栅极，在衬底和栅极的整个表面上形成一次性层，所述一次性层具有比所述第一导电型杂质更高的浓度的第一导电型杂质和第二导电型杂质，并且通过扩散在所述基板上形成所述第二导电型杂质的源极和漏极区域通过退火工艺将一次性层的第二导电类型杂质进入衬底，其中一次性层包括BPSG层，其中BPSG层是掺杂有较高掺杂剂硼浓度的B + PSG层，磷的形成一个p型MOS晶体管。

5. 发明授权

US5591667A Method for fabricating MOS transistor utilizing doped disposable layer 失效
标题翻译：使用掺杂一次性层制造MOS晶体管的方法
公开(公告)号：US5591667A
公开(公告)日：1997-01-07
申请号：US445580
申请日：1995-05-22
申请人： Jeong S. Byun , Sang J. Choi
发明人： Jeong S. Byun , Sang J. Choi
IPC分类号： H01L21/316 , H01L21/225 , H01L21/335 , H01L21/336 , H01L29/78
CPC分类号： H01L29/66575 , H01L21/2257 , Y10S148/144
摘要： A method for fabricating an MOS transistor includes the steps of forming a gate insulating layer on a substrate of a first conductivity-type, forming a gate on the gate insulating layer, forming a disposable layer over an entire surface of the substrate and the gate, the disposable layer having a first conductivity-type impurity and a second conductivity-type impurity of a higher concentration than that of the first conductivity-type impurity, and forming a source and drain area of the second conductivity-type impurity on the substrate by diffusing the second conductivity-type impurity of the disposable layer into the substrate by means of an annealing process, wherein the disposable layer includes a BPSG layer.
摘要翻译：一种用于制造MOS晶体管的方法包括以下步骤：在第一导电类型的衬底上形成栅极绝缘层，在栅绝缘层上形成栅极，在衬底和栅极的整个表面上形成一次性层，所述一次性层具有比所述第一导电型杂质更高的浓度的第一导电型杂质和第二导电型杂质，并且通过扩散在所述基板上形成所述第二导电型杂质的源极和漏极区域通过退火工艺将一次性层的第二导电型杂质进入衬底，其中一次性层包括BPSG层。

6. 发明授权

US5413957A Method for fabricating MOS transistor having source/drain region of shallow junction and silicide film 失效
标题翻译：制造具有浅结的源/漏区和硅化物膜的MOS晶体管的方法
公开(公告)号：US5413957A
公开(公告)日：1995-05-09
申请号：US185553
申请日：1994-01-24
申请人： Jeong S. Byun
发明人： Jeong S. Byun
IPC分类号： H01L21/285 , H01L21/336 , H01L21/225
CPC分类号： H01L29/66575 , H01L21/28518
摘要： A method for fabricating an MOS transistor having a source/drain region of shallow junction and a thin silicide film is disclosed.The present method taking advantage of the phase separation of a titanium nitride is capable of forming a thin silicide film in one metal heat treatment process and thus, simplifying the processes as compared with conventional methods employing two heat treatments. In addition, the consumption of a source/drain region is minimized, so that a titanium silicide film suitable to shallow junction can be obtained, preventive of the increase of contact resistance. Further, the improvement of device characteristic are also attributed to the lack of metal bridge, which results from the function of the phase separation phenomenon preventing the formation of the metal bridge in spite of the heat treatment of high temperature. Furthermore, since the source/drain region is formed at an acceleration energy of not less than 30 KeV by employing a common ion-implanting apparatus, the present invention has significant advantages over the conventional methods, including the parasitic resistance such as the area resistance of the junction and the device characteristics.
摘要翻译：公开了一种用于制造具有浅结的源极/漏极区域和薄的硅化物膜的MOS晶体管的方法。利用氮化钛的相分离的本方法能够在一种金属热处理工艺中形成薄的硅化物膜，因此与采用两种热处理的常规方法相比，简化了工艺。此外，源极/漏极区域的消耗被最小化，使得可以获得适合于浅结的硅化钛膜，以防止接触电阻的增加。此外，器件特性的改善也归因于缺少金属桥，这是由于防止金属桥的形成的相分离现象的功能，尽管高温热处理。此外，由于通过使用公共的离子注入装置，源极/漏极区域以不小于30KeV的加速能量形成，因此本发明与常规方法相比具有显着的优点，包括诸如面积电阻的寄生电阻接头和器件特性。

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