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1. 发明授权

US6060728A Organic light emitting device structure and process 失效
标题翻译：有机发光器件结构及工艺
公开(公告)号：US6060728A
公开(公告)日：2000-05-09
申请号：US94731
申请日：1998-06-15
申请人： Amalkumar P. Ghosh , Gary W. Jones
发明人： Amalkumar P. Ghosh , Gary W. Jones
IPC分类号： H01L27/32 , H01L33/00
CPC分类号： H01L27/3283
摘要： Isolation structures and means for isolating the electron injectors in an organic light emitting device are disclosed. The isolation structures may reduce the likelihood of electrical shorts or cross-talks between adjacent columns of electron injector material. The isolation structures may comprise multiple layers of distinct material, including a layer of organic insulation material, such as photoresist or other hydrophobic organic material. The insulation material may be spin or extrusion coated onto the device. The insulation material may be sandwiched between inorganic oxide layers. The insulation material may be selected such that it is capable of being preferentially etched relative to the oxide layers by dry etching methods such as oxygen plasma. Alternatively, the insulation material may be made of material that does not have a very strong adhesion to an underlying oxide layer, so that the insulation material and any conductive material formed on top of it may be removed using a tape lift-off process. Methods for making the aforementioned isolation structures are also disclosed.
摘要翻译：公开了用于隔离有机发光器件中的电子注入器的隔离结构和装置。隔离结构可以减少电子注射器材料的相邻列之间的电短路或交叉谈话的可能性。隔离结构可以包括多层不同的材料，包括一层有机绝缘材料，例如光致抗蚀剂或其它疏水性有机材料。绝缘材料可以旋转或挤压涂覆在设备上。绝缘材料可以夹在无机氧化物层之间。可以选择绝缘材料，使得其能够通过诸如氧等离子体之类的干蚀刻方法相对于氧化物层优先蚀刻。或者，绝缘材料可以由对下面的氧化物层不具有非常强的粘附性的材料制成，从而可以使用带剥离工艺去除绝缘材料和形成在其顶部的任何导电材料。还公开了制备上述隔离结构的方法。

2. 发明授权

US6027388A Lithographic structure and method for making field emitters 失效
标题翻译：制作场致发射体的平版印刷结构和方法
公开(公告)号：US6027388A
公开(公告)日：2000-02-22
申请号：US906311
申请日：1997-08-05
申请人： Gary W. Jones , Susan K. Jones , Amalkumar P. Ghosh
发明人： Gary W. Jones , Susan K. Jones , Amalkumar P. Ghosh
IPC分类号： H01J9/02
CPC分类号： H01J9/025
摘要： A mask structure may be formed on a field emitter substrate for use in forming emitter wells on and in the substrate. The mask structure may be formed from a multilayered structure on the surface of the substrate using a laser lithography process. From the substrate up, the multilayered structure may include an antireflective coating, a photoresistive layer, an optional etch resistant layer between the antireflective coating and the photoresistive layer, and an optional second antireflective coating between the optional etch resistant layer and the photoresistive layer. The pattern of the mask structure may be transferred to the multilayer structure by exposing the photoresistive layer to laser light. The antireflective coatings may reduce the amount of stray laser light that reflects off the substrate and onto the back of the photoresistive layer. Development of the photoresistive layer following exposure to laser light may be monitored and selectively arrested to form a mask structure with a selective pitch. The antireflective coating may be etched optionally so that it is undercut beneath the overlying etch resistant layer or photoresistive layer to aid in the formation of emitters using a veil field emitter process or an etched gate process.
摘要翻译：掩模结构可以形成在场发射器衬底上，用于在衬底上和衬底中形成发射极阱。掩模结构可以使用激光光刻工艺在衬底的表面上由多层结构形成。从衬底向上，多层结构可以包括抗反射涂层，光致抗蚀剂层，抗反射涂层和光致抗蚀剂层之间的任选的耐蚀刻层，以及可选的耐蚀刻层和光刻胶层之间的可选的第二抗反射涂层。掩模结构的图案可以通过将光致抗蚀剂层暴露于激光来转移到多层结构。抗反射涂层可以减少从衬底反射到光致抗蚀剂层背面的杂散激光的量。暴露于激光后的光致抗蚀剂层的显影可以被监测并选择性地阻止以形成具有选择性间距的掩模结构。可以任选地对抗反射涂层进行蚀刻，使其在覆盖的抗蚀刻层或光致抗蚀剂层下方被切下，以帮助使用面膜场发射器工艺或蚀刻浇口工艺形成发射器。

3. 发明授权

US5886460A Field emitter device, and veil process for the fabrication thereof 失效
标题翻译：场发射器器件及其制造的面纱工艺
公开(公告)号：US5886460A
公开(公告)日：1999-03-23
申请号：US974757
申请日：1997-11-20
申请人： Gary W. Jones , Steven M. Zimmerman , Jeffrey A. Silvernail , Susan K. Schwartz Jones
发明人： Gary W. Jones , Steven M. Zimmerman , Jeffrey A. Silvernail , Susan K. Schwartz Jones
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J19/24
CPC分类号： H01J9/025 , H01J3/022 , H01J2201/319 , H01J2329/00 , Y10S428/938
摘要： A field emitter device formed by a veil process wherein a protective layer comprising a release layer is deposited on the gate electrode layer for the device, with the protective layer overlying the circumscribing peripheral edge of the opening of the gate electrode layer, to protect the edge of the gate electrode layer during etching of the field emitter cavity in the dielectric material layer on a substrate, and during the formation of a field emitter element in the cavity by depositing a field emitter material through the opening. The protective layer is readily removed subsequent to completion of the cavity etching and emitter formation steps, to yield the field emitter device. Also disclosed are various planarizing structures and methods, and current limiter compositions permitting high efficiency emission of electrons from the field emitter elements at low turn-on voltages.
摘要翻译：通过面纱工艺形成的场致发射体器件，其中包含释放层的保护层沉积在器件的栅极电极层上，其中保护层覆盖栅极电极层的开口的外接边缘，以保护边缘在栅极电极层的蚀刻期间，在衬底中的电介质材料层中的场致发射器空腔的蚀刻期间，以及在通过开口沉积场致发射体材料在空腔中形成场发射极元件期间。在腔蚀刻和发射极形成步骤完成之后，保护层容易去除，以产生场致发射器件。还公开了各种平面化结构和方法，以及允许在低导通电压下从场致发射体元件高效发射电子的限流器组合物。

4. 发明授权

US5828288A Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications 失效
标题翻译：用于场发射器显示器和其他电子源应用的基座边缘发射极和非线性限流器
公开(公告)号：US5828288A
公开(公告)日：1998-10-27
申请号：US518745
申请日：1995-08-24
申请人： Gary W. Jones , Steven M. Zimmerman , Susan K. Schwartz Jones , Michael J. Costa , Jeffrey A. Silvernail
发明人： Gary W. Jones , Steven M. Zimmerman , Susan K. Schwartz Jones , Michael J. Costa , Jeffrey A. Silvernail
IPC分类号： H01J1/304 , H01C7/00
CPC分类号： H01J1/3042 , H01J2201/30423 , H01J2201/319
摘要： A microelectronic field emitter device comprising a substrate, a conductive pedestal on said substrate, and an edge emitter electrode on said pedestal, wherein the edge emitter electrode comprises an emitter cap layer having an edge. The invention also contemplates a current limiter for a microelectronic field emitter device, which comprises a semi-insulating material selected from the group consisting of SiO, SiO+Cr (0 to 50% wt.), SiO2+Cr (0 to 50% wt.), SiO+Nb, Al2O3 and SixOyNz sandwiched between an electron injector and a hole injector. Another aspect of the invention relates to a microelectronic field emitter device comprising a substrate, an emitter conductor on such substrate, and a current limiter stack formed on said substrate, such stack having a top and at least one edge, a resistive strap on top of the stack, extending over the edge in electrical contact with the emitter conductor; and an emitter electrode on the current limiter stack over the resistive strap.
摘要翻译：一种微电子场发射器件，包括衬底，所述衬底上的导电基座和所述基座上的边缘发射极，其中所述边缘发射电极包括具有边缘的发射极帽层。本发明还考虑了一种用于微电子场发射器件的电流限制器，其包括选自由SiO，SiO + Cr（0至50％重量），SiO 2 + Cr（0至50重量％）组成的组的半绝缘材料），夹在电子注入器和空穴注入器之间的SiO + Nb，Al2O3和SixOyNz。本发明的另一方面涉及一种微电子场发射器件，其包括衬底，在该衬底上的发射极导体，以及形成在所述衬底上的限流器叠层，该堆叠具有顶部和至少一个边缘，堆叠，在与发射极导体电接触的边缘上延伸; 并且电流限制器堆叠上的电阻带上的发射极电极。

5. 发明授权

US5788550A Method of photoforming a spacer structure and use in making a display panel 失效
标题翻译：用于形成间隔结构并用于制造显示面板的方法
公开(公告)号：US5788550A
公开(公告)日：1998-08-04
申请号：US778139
申请日：1997-01-02
申请人： Gary W. Jones , Steven M. Zimmerman
发明人： Gary W. Jones , Steven M. Zimmerman
IPC分类号： H01J9/24 , H01J29/02 , H01J29/86 , H01J31/12 , H01J1/66
CPC分类号： H01J9/242 , H01J29/028 , H01J29/864 , H01J31/127 , H01J2329/00 , H01J2329/8625 , H01J2329/864 , H01J2329/866
摘要： A spacer structure for use in a flat panel display, and a corresponding flat panel display article are disclosed, together with an appertaining method of fabricating the spacer structure utilizing a photosensitive precursor material which is selectively irradiated, developed and etchingly processed to produce shaped standoff elements for a unitary spacer structure. The spacer structure may be dimensionally fabricated to precisely align with a selected pixel region, comprising a single pixel or an array of pixels, e.g., a color (red, blue, green) triad.
摘要翻译：公开了一种用于平板显示器的间隔结构，以及相应的平板显示器件，以及使用光敏前体材料制造间隔结构的一种方法，该光敏前体材料被选择性地照射，显影和蚀刻加工以产生成形的支座元件用于整体间隔结构。间隔结构可以被尺寸制造成精确对齐所选择的像素区域，包括单个像素或像素阵列，例如，颜色（红色，蓝色，绿色）三元组。

6. 发明授权

US5771098A Laser interferometric lithographic system providing automatic change of fringe spacing 失效
公开(公告)号：US5771098A
公开(公告)日：1998-06-23
申请号：US721460
申请日：1996-09-27
申请人： Amalkumar P. Ghosh , Susan K. Schwartz Jones , Gary W. Jones , Steven M. Zimmerman , Yachin Liu
发明人： Amalkumar P. Ghosh , Susan K. Schwartz Jones , Gary W. Jones , Steven M. Zimmerman , Yachin Liu
IPC分类号： G01B9/02 , G03F7/00 , G03F7/20
CPC分类号： G03F7/70408 , G03F7/001
摘要： An interferometric lithographic apparatus includes an arrangement for applying interfering laser beams to a part for producing a first interference pattern. The first interference pattern has a first fringe spacing. A mobile part holder stage is repositioned to change the interference pattern and produce a second fringe spacing. A control arrangement, automatically responsive to the repositioning of the part holder, re-aligns optical paths and optimally interferes the laser beams to produce the second fringe spacing.

7. 发明授权

US5959725A Large area energy beam intensity profiler 失效
标题翻译：大面积能量束强度分析仪
公开(公告)号：US5959725A
公开(公告)日：1999-09-28
申请号：US18466
申请日：1998-02-04
申请人： Amalkumar P. Ghosh
发明人： Amalkumar P. Ghosh
IPC分类号： G01J1/42 , G03F7/20 , G01J1/00
CPC分类号： G03F7/70408 , G01J1/4257
摘要： A large area energy beam intensity profiler and method of profiling are disclosed. The profiler includes intensity detectors which generate electrical signals corresponding to the intensity of the beam. The output of the detectors is processed by a computer and displayed on a monitor. The invention provides for adjustment of the beam in response to a nonuniform intensity profile, or an indication that the beam is misaligned.
摘要翻译：公开了一种大面积能量束强度分析仪和分析方法。轮廓仪包括强度检测器，其产生对应于梁的强度的电信号。检测器的输出由计算机处理并显示在监视器上。本发明提供响应于不均匀强度分布的波束的调整或者波束不对准的指示。

8. 发明授权

US5866978A Matrix getter for residual gas in vacuum sealed panels 失效
标题翻译：真空密封板中残留气体的基质吸气剂
公开(公告)号：US5866978A
公开(公告)日：1999-02-02
申请号：US941078
申请日：1997-09-30
申请人： Gary W. Jones , Amalkumar P. Ghosh , Steven M. Zimmerman , Munisamy Anandan
发明人： Gary W. Jones , Amalkumar P. Ghosh , Steven M. Zimmerman , Munisamy Anandan
IPC分类号： H01J9/385 , H01J29/94 , H01J1/62
CPC分类号： H01J9/385 , H01J29/94 , H01J2209/385 , H01J2329/00
摘要： An integral and internal matrix getter structure for capturing residual gas in a vacuum sealed container is disclosed. The vacuum sealed container may be a flat panel display having a small vacuum gap between two closely spaced panels. The getter structure may be provided on the inside of the walls of the display. In particular, the getter structure may be provided between phosphor groups and/or between field emitter groups on the display panels. The getter structure may be sealed to avoid exposure of the getter material until after a vacuum condition is reached within the display. Activation of the getter structure may be provided by selectively heating the getter structure with a laser or with resistive heating elements underlying the getter structure. Methods of making the getter structure are also disclosed.
摘要翻译：公开了一种用于捕获真空密封容器中残留气体的整体和内部基质吸气剂结构。真空密封容器可以是在两个紧密间隔的面板之间具有小真空间隙的平板显示器。吸气剂结构可以设置在显示器的壁的内部。特别地，吸气剂结构可以设置在荧光体组之间和/或在显示面板上的场发射体组之间。吸气剂结构可以被密封以避免吸气剂材料暴露直到在显示器内达到真空条件之后。吸气剂结构的激活可以通过用激光器或吸气剂结构下面的电阻加热元件选择性加热吸气剂结构来提供。还公开了制备吸气剂结构的方法。

9. 发明授权

US5619889A Method of making microstructural surgical instruments 失效
标题翻译：制作微结构外科手术器械的方法
公开(公告)号：US5619889A
公开(公告)日：1997-04-15
申请号：US321089
申请日：1994-10-11
申请人： Gary W. Jones , Steven M. Zimmerman
发明人： Gary W. Jones , Steven M. Zimmerman
IPC分类号： A61F9/013 , B23P15/40 , B24B1/04 , B24B3/36 , B24B3/58
CPC分类号： B24B1/04 , A61F9/0133 , B23P15/40 , B24B3/36 , B24B3/58
摘要： A method of making a microstructural shaped article from a high hardness substrate workpiece, in which an energy-transmissive shaping member is secured in energy-transmissive relationship to an energy source, and the substrate workpiece is positioned in alignment therewith. A fine grain slurry of solid particles is provided between the energy-transmissive shaping member and the substrate, and the substrate workpiece is milled by the energy-transmissive shaping member in compressive bearing relationship to the substrate through the fine grain slurry of solid particles, for sufficient time to form the desired shape in the substrate workpiece. A reusable, tribologically enhanced die is also described, for use in the method of the invention. The energy source may be an electroacoustic energy source or an electric power energy source. The non-etched microstructural articles of the invention include knives, saws, and other instruments useful for ocular and other surgical applications.
摘要翻译：从高硬度基板工件制造微结构成形制品的方法，其中能量传递成形构件以与能量源的能量传递关系固定，并且衬底工件被定位成与其对准。在能量传递成形构件和基板之间设置有细颗粒的固体颗粒，并且通过固体颗粒的细颗粒浆料与基板压缩承载关系的能量传递成形构件将基板工件研磨，足够的时间在基板工件中形成所需的形状。还描述了可重复使用的摩擦增强的模具，用于本发明的方法。能量源可以是电声能量源或电力能量源。本发明的未蚀刻的微结构制品包括可用于眼部和其它手术应用的刀，锯和其它器械。

10. 发明授权

US5534743A Field emission display devices, and field emission electron beam source and isolation structure components therefor 失效
标题翻译：场致发射显示装置及场发射电子束源及隔离结构部件
公开(公告)号：US5534743A
公开(公告)日：1996-07-09
申请号：US301473
申请日：1994-09-07
申请人： Gary W. Jones , Steven M. Zimmerman
发明人： Gary W. Jones , Steven M. Zimmerman
IPC分类号： G01R33/10 , G02B27/00 , G02B27/01 , G02B27/22 , G09G3/00 , H01J1/304 , H01J3/02 , H01J9/02 , H01J9/24 , H01J29/02 , H01J29/94 , H01J31/12 , H04N5/70 , H04N5/74 , H04N13/00 , H01J1/02
CPC分类号： G09G3/001 , G01R33/10 , G02B27/017 , G02B27/0172 , G02B27/0176 , G02B27/2235 , H01J1/3042 , H01J29/028 , H01J29/94 , H01J3/022 , H01J31/127 , H01J9/025 , H04N13/0422 , H04N13/0438 , H04N13/044 , H04N13/0459 , H04N13/0497 , H04N5/7408 , G02B2027/0132 , G02B2027/0136 , H01J2201/304 , H01J2201/30426 , H01J2201/30457 , H01J2201/319 , H01J2209/385 , H01J2329/00 , H01J2329/8625 , H01J2329/863 , H01J2329/864 , H04N13/0059 , H04N13/0285 , H04N13/0427 , H04N13/0456 , H04N5/70 , H04N5/7491
摘要： A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.
摘要翻译：一种场发射器结构，包括：基底; 基底基板上的场发射体元件; 围绕基底衬底上的场发射体元件的多层差分蚀刻介质堆叠; 以及覆盖多层差分蚀刻的电介质叠层的栅电极，并且以与外界发射极元件间隔开的关系。还公开了电子源器件，其包括电子发射器元件，其包括选自由漏电介质材料和漏绝缘体材料组成的组的材料，以及电子源器件，其包括电子发射器元件，该电子发射器元件包括掺杂有隧道电子发射增加有效量的掺杂物种类和薄膜三极管器件。

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