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    • 1. 发明授权
    • Lithographic structure and method for making field emitters
    • 制作场致发射体的平版印刷结构和方法
    • US6027388A
    • 2000-02-22
    • US906311
    • 1997-08-05
    • Gary W. JonesSusan K. JonesAmalkumar P. Ghosh
    • Gary W. JonesSusan K. JonesAmalkumar P. Ghosh
    • H01J9/02
    • H01J9/025
    • A mask structure may be formed on a field emitter substrate for use in forming emitter wells on and in the substrate. The mask structure may be formed from a multilayered structure on the surface of the substrate using a laser lithography process. From the substrate up, the multilayered structure may include an antireflective coating, a photoresistive layer, an optional etch resistant layer between the antireflective coating and the photoresistive layer, and an optional second antireflective coating between the optional etch resistant layer and the photoresistive layer. The pattern of the mask structure may be transferred to the multilayer structure by exposing the photoresistive layer to laser light. The antireflective coatings may reduce the amount of stray laser light that reflects off the substrate and onto the back of the photoresistive layer. Development of the photoresistive layer following exposure to laser light may be monitored and selectively arrested to form a mask structure with a selective pitch. The antireflective coating may be etched optionally so that it is undercut beneath the overlying etch resistant layer or photoresistive layer to aid in the formation of emitters using a veil field emitter process or an etched gate process.
    • 掩模结构可以形成在场发射器衬底上,用于在衬底上和衬底中形成发射极阱。 掩模结构可以使用激光光刻工艺在衬底的表面上由多层结构形成。 从衬底向上,多层结构可以包括抗反射涂层,光致抗蚀剂层,抗反射涂层和光致抗蚀剂层之间的任选的耐蚀刻层,以及可选的耐蚀刻层和光刻胶层之间的可选的第二抗反射涂层。 掩模结构的图案可以通过将光致抗蚀剂层暴露于激光来转移到多层结构。 抗反射涂层可以减少从衬底反射到光致抗蚀剂层背面的杂散激光的量。 暴露于激光后的光致抗蚀剂层的显影可以被监测并选择性地阻止以形成具有选择性间距的掩模结构。 可以任选地对抗反射涂层进行蚀刻,使其在覆盖的抗蚀刻层或光致抗蚀剂层下方被切下,以帮助使用面膜场发射器工艺或蚀刻浇口工艺形成发射器。