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1. 发明申请

US20170336014A1 HEAT INSULATOR 审中-公开
公开(公告)号：US20170336014A1
公开(公告)日：2017-11-23
申请号：US15673592
申请日：2017-08-10
申请人： Covalent Materials Corporation
发明人： Shuko AKAMINE , Mitsuhiro FUJITA
IPC分类号： F16L59/02 , C04B35/80 , C04B35/44 , C04B35/443
CPC分类号： F16L59/028 , C04B35/44 , C04B35/443 , C04B35/803 , C04B38/00 , C04B2111/763 , C04B2201/32 , C04B2235/3262 , C04B2235/3272 , C04B2235/3279 , C04B2235/3284 , C04B2235/5224 , C04B2235/5228 , C04B2235/526 , C04B2235/5264 , C04B2235/72 , C04B2235/763 , C04B2235/79 , C04B2235/9607 , C04B38/0054 , C04B38/0074 , C04B38/0645
摘要： A heat insulator including a porous sintered body having a porosity of 70 vol % or more, pores having a pore size of more than 1000 μm in a proportion of 10 vol % or less of all pores and pores having a pore size of 0.8 μm or more and less than 10 μm occupy 50 vol % or more and 80 vol % or less of pores having a pore size of 1000 μm or less, while pores having a pore size of 0.01 μm or more and less than 0.8 μoccupy 10 vol % or more and 30 vol % or less pores having a pore size of 1000 μm or less. The porous sintered body is formed from MgAl2O4 raw material and includes a fibrous layer formed from inorganic material fibers, the heat conductivity of the heat insulator at 1000° C. or more and 1500° C. or less being 0.40 W/m·K) or less.

2. 发明申请

US20160003401A1 HEAT INSULATOR 有权
标题翻译：热绝缘子
公开(公告)号：US20160003401A1
公开(公告)日：2016-01-07
申请号：US14755757
申请日：2015-06-30
申请人： Covalent Materials Corporation
发明人： Shuko Akamine , Mitsuhiro Fujita
IPC分类号： F16L59/02
CPC分类号： F16L59/028 , C04B35/44 , C04B35/443 , C04B35/803 , C04B38/00 , C04B2111/763 , C04B2201/32 , C04B2235/3262 , C04B2235/3272 , C04B2235/3279 , C04B2235/3284 , C04B2235/5224 , C04B2235/5228 , C04B2235/526 , C04B2235/5264 , C04B2235/72 , C04B2235/763 , C04B2235/79 , C04B2235/9607 , C04B38/0054 , C04B38/0074 , C04B38/0645
摘要： One aspect of the heat insulator of the present invention includes a porous sintered body having a porosity of 70 vol % or more and less than 91 vol %, and pores having a pore size of 0.8 μm or more and less than 10 μm occupy 10 vol % or more and 70 vol % or less of the total pore volume, while pores having a pore size of 0.01 μm or more and less than 0.8 μm occupy 5 vol % or more and 30 vol % or less of the total pore volume. The porous sintered body is formed from an MgAl2O4 (spinel) raw material and fibers formed of an inorganic material, the heat conductivity of the heat insulator at 1000° C. or more and 1500° C. or less is 0.40 W/(m·K) or less, and the weight ratio of Si relative to Mg in the porous sintered body is 0.15 or less.
摘要翻译：本发明的绝热体的一个方面包括孔隙率为70体积％以上且小于91体积％的多孔烧结体，孔径为0.8μm以上且小于10μm的孔占据10体积％％以上且70体积％以下，而孔径为0.01μm以上且小于0.8μm的孔占总孔体积的5体积％以上且30体积％以下。多孔烧结体由MgAl2O4（尖晶石）原料和无机材料形成的纤维形成，绝热体的导热系数在1000℃以上且1500℃以下，为0.40W /（m·s） K）以下，多孔烧结体中的Si相对于Mg的重量比为0.15以下。

3. 发明授权

US09139448B2 Heat-insulating material 有权
标题翻译：绝热材料
公开(公告)号：US09139448B2
公开(公告)日：2015-09-22
申请号：US13972040
申请日：2013-08-21
申请人： Covalent Materials Corporation
发明人： Shuko Akamine , Mitsuhiro Fujita
IPC分类号： C04B38/00 , C01F7/02 , C01F7/16 , C04B35/44 , C04B35/443 , C04B111/28
CPC分类号： C01F7/02 , C01F7/162 , C04B35/44 , C04B35/443 , C04B38/0074 , C04B2111/28 , C04B2235/3262 , C04B2235/3272 , C04B2235/3279 , C04B2235/3284 , C04B2235/763 , C04B2235/9607 , C04B38/0054
摘要： A heat-insulating material is provided in which thermal conductivity is controlled not to increase and good insulation properties are held even in a high temperature range. The heat-insulating material is formed of a spinel porous sintered body having a porosity of 65 to 90 vol. % and represented by a chemical formula XAl2O4 (X=Zn, Fe, Mg, Ni, or Mn) which is arranged such that large pores having a diameter of greater than 1000 μm occupy 25 vol. % or less of the total pore volume, fine pores having a diameter of 0.45 μm or less occupy 5 to 40 vol. % of the volume of the pores having a diameter of 1000 μm or less, at least one pore-diameter distribution peak is within a range of 0.14 to 10 μm, and is formed of sintered particles having a calculated average particle diameter of 0.04 to 1 μm.
摘要翻译：提供了一种绝热材料，其中热导率被控制为不增加，并且即使在高温度范围内也保持良好的绝缘性能。隔热材料由孔隙率为65〜90体积的尖晶石多孔质烧结体构成。％，由化学式XAl2O4（X = Zn，Fe，Mg，Ni或Mn）表示，其排列使得直径大于1000μm的大孔占据25体积％。总孔体积的％以下，直径为0.45μm以下的细孔占据5〜40体积％。直径为1000μm以下的孔的体积的％，至少一个孔径分布峰在0.14〜10μm的范围内，由计算出的平均粒径为0.04〜1的烧结体形成 μm。

4. 发明申请

US20140339679A1 NITRIDE SEMICONDUCTOR SUBSTRATE 有权
标题翻译：氮化物半导体基板
公开(公告)号：US20140339679A1
公开(公告)日：2014-11-20
申请号：US14271521
申请日：2014-05-07
申请人： Covalent Materials Corporation
发明人： Jun KOMIYAMA , Akira YOSHIDA , Hiroshi OISHI
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/1075 , H01L29/7786
摘要： A nitride semiconductor substrate suitable for a high withstand voltage power device is provided in which current collapse is controlled, while reducing leakage current. In a nitride semiconductor substrate, wherein a buffer layer, an active layer, and an electron supply layer, each comprising a group 13 nitride, are stacked one by one on a silicon single crystal substrate, the buffer layer has a structure where a multilayer stack in which a pair of nitride layers having different concentrations of Al or Ga are repeatedly deposited a plurality of times on an initial layer of AlxGa1-xN (0≦x≦1) is stacked, and includes a doping layer whose carbon concentration is 1×1018 to 1×1021 cm−3 and whose Si concentration is 1×1017 to 1×1020 cm−3, a thickness of the doping layer is 15% or more of the total thickness of the buffer layer.
摘要翻译：提供适用于高耐压功率器件的氮化物半导体衬底，其中电流崩溃被控制，同时减少漏电流。在氮化硅半导体衬底中，其中每个包含13族氮化物的缓冲层，有源层和电子供给层在硅单晶衬底上一个一个堆叠，缓冲层具有多层叠层其中在Al x Ga 1-x N（0＆amp; nlE; x＆lt; 1 | 1）的初始层上重复沉积多个Al或Ga的不同浓度的一对氮化物层，并且包括碳浓度为1× 1018〜1×1021cm-3，Si的浓度为1×1017〜1×1020cm-3，掺杂层的厚度为缓冲层的总厚度的15％以上。

5. 发明授权

US08785942B2 Nitride semiconductor substrate and method of manufacturing the same 有权
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US08785942B2
公开(公告)日：2014-07-22
申请号：US13352987
申请日：2012-01-18
申请人： Akira Yoshida , Jun Komiyama , Yoshihisa Abe , Hiroshi Oishi , Kenichi Eriguchi , Shunichi Suzuki
发明人： Akira Yoshida , Jun Komiyama , Yoshihisa Abe , Hiroshi Oishi , Kenichi Eriguchi , Shunichi Suzuki
IPC分类号： H01L29/15
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/7787
摘要： A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse.In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05≦x≦0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0≦y≦0.04).
摘要翻译：提供了适用于常关型高击穿电压装置的氮化物半导体衬底和制造衬底的方法，其允许更高的阈值电压和电流崩溃的改善。在具有衬底1的氮化物半导体衬底10中，形成在衬底1的一个主平面上的缓冲层2，形成在缓冲层2上的中间层3，形成在中间层3上的电子传输层4和形成在电子输送层4上的电子供给层5，中间层3的厚度为200nm〜1500nm，碳浓度为5×1016原子/ cm3〜1×1018原子/ cm3，为AlxGa1-xN（ 0.05＆nlE; x＆lt; L; 0.24），电子传输层4的厚度为5nm〜200nm，为Al y Ga 1-y N（0＆nl E; y＆nlE; 0.04）。

6. 发明申请

US20140055783A1 METHOD OF ANALYZING NITRIDE SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE USING THE ANALYSIS METHOD 有权
标题翻译：分析氮化物半导体层的方法和使用分析方法制造氮化物半导体衬底的方法
公开(公告)号：US20140055783A1
公开(公告)日：2014-02-27
申请号：US13975413
申请日：2013-08-26
申请人： Covalent Materials Corporation
发明人： Yoshihata YANASE , Hiroshi Shirai , Jun Komiyama , Hiroshi Oishi
IPC分类号： G01J3/42
CPC分类号： G01J3/42 , G01N21/33 , G01N21/3563 , G01N21/55 , G01N2021/3568
摘要： A method of analyzing a nitride semiconductor layer in which a mixing ratio at a ternary mixed-crystal nitride semiconductor layer can be analyzed non-destructively, simply, and precisely, even its surface is covered with a cap layer is provided. The nitride semiconductor layer having an AN layer or a BN layer with a thickness of 0.5 to 10 nm that is stacked on an AxB1-xN layer (A and B: 13 group elements, 0≦x≦1) is subjected to reflection spectroscopy to obtain a reflection spectrum of the AxB1-xN layer. Let an energy value in a peak position of the reflection spectrum be a band gap energy Egap, and let a band gap energy value of AxB1-xN (x=1) be EA and a band gap energy value of AxB1-xN (x=0) be EB, x is calculated from Equation Egap=(1−x)EB+xEA−bx(1−x) (where b is bowing parameter corresponding to A and B).
摘要翻译：提供了分析氮化物半导体层的方法，其中可以非破坏性地，简单地且精确地，甚至其表面被覆盖层覆盖三元混合氮化物半导体层的混合比。叠层在AxB1-xN层（A和B：13组元素，0 @ x @）上的具有厚度为0.5至10nm的AN层或BN层的氮化物半导体层经受反射光谱法获得AxB1-xN层的反射光谱。使反射光谱的峰值位置的能量值为带隙能量Egap，使AxB1-xN（x = 1）的带隙能量值为EA，将AxB1-xN的带隙能量值（x = 0）为EB，x由等式Egap =（1-x）EB + xEA-bx（1-x）（其中b是对应于A和B的弯曲参数）计算。

7. 发明申请

US20130256599A1 CERAMICS COMPOSITE 有权
标题翻译：陶瓷复合材料
公开(公告)号：US20130256599A1
公开(公告)日：2013-10-03
申请号：US13762320
申请日：2013-02-07
申请人： Masaki IRIE
发明人： Masaki IRIE
IPC分类号： C09K11/77
CPC分类号： C09K11/7774 , C04B35/117 , C04B35/6261 , C04B35/62655 , C04B35/62695 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3286 , C04B2235/5445 , C04B2235/6581 , C04B2235/764 , C04B2235/80 , C04B2235/9646 , C04B2235/9653 , C04B2235/9661 , H01L33/502 , H01L33/644 , Y02B20/181
摘要： The present invention relates to a ceramics composite including: a matrix phase including Al2O3 or a substance in which one selected from Sc2O3 and Ga2O3 is incorporated into Al2O3; a main phosphor phase formed in the matrix phase and including a substance represented by a general formula A3B5O12:Ce in which A is at least one selected from Y, Gd, Tb, Yb and Lu and B is at least one selected from Al, Ga and Sc; and a CeAl11O18 phase mixed in the matrix phase and the main phosphor phase.
摘要翻译：本发明涉及一种陶瓷复合体，其包括：包含Al 2 O 3或其中选自Sc 2 O 3和Ga 2 O 3的物质的基体相引入到Al 2 O 3中; 在基体相中形成的主荧光体相，其包含由通式A3B5O12：Ce表示的物质，其中A为选自Y，Gd，Tb，Yb中的至少一种，Lu和B为选自Al，Ga 和Sc; 和CeAl11O18相混合在基体相和主荧光体相中。

8. 发明申请

US20120160766A1 TITANIUM OXIDE POROUS PARTICLE FOR BLOOD PURIFICATION, BLOOD PURIFICATION MATERIAL AND MODULE FOR BLOOD PURIFICATION 审中-公开
标题翻译：用于血液净化的氧化钛多孔颗粒，用于血液净化的血液净化材料和模块
公开(公告)号：US20120160766A1
公开(公告)日：2012-06-28
申请号：US13335508
申请日：2011-12-22
申请人： Takafumi IMAIZUMI , Michio Murayama
发明人： Takafumi IMAIZUMI , Michio Murayama
IPC分类号： B01D39/00
CPC分类号： B01D39/06 , B01D39/2072
摘要： The present invention relates to a titanium oxide porous particle for blood purification, which includes a titanium oxide, in which when the titanium oxide porous particle is measured by an electron spin resonance measurement at a temperature of 10 K, a signal at a g value of around 1.96 is present, the signal being divided into two signals representing a component g1 parallel to a axis of symmetry and a component g2 vertical to the axis of symmetry, and a signal at a g value of from 2.003 to 2.004 is not substantially present.
摘要翻译：本发明涉及一种用于血液净化的二氧化钛多孔颗粒，其包括氧化钛，其中当通过在10K的温度下的电子自旋共振测量来测量氧化钛多孔颗粒时，以ag值为周围的信号 1.96存在，信号被分成两个信号，表示与对称轴平行的分量g1和垂直于对称轴的分量g2，并且基本上没有存在从2.003到2.004的信号值。

9. 发明申请

US20120139088A1 SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER 有权
标题翻译：硅陶瓷及其加热处理方法
公开(公告)号：US20120139088A1
公开(公告)日：2012-06-07
申请号：US13322080
申请日：2010-05-28
申请人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima , Hiroyuki Saito
发明人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima , Hiroyuki Saito
IPC分类号： H01L29/02 , H01L21/26
CPC分类号： H01L21/3225 , Y10S438/928
摘要： A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.
摘要翻译：提供了一种用于防止大块区域中的空隙缺陷成为装置处理中的污染源和滑移产生的硅晶片。并且提供了一种用于在晶片表面附近的区域中减少诸如COP之类的晶体缺陷的热处理方法作为器件有源区。硅晶片具有作为无缺陷区域的表面区域1和包括多面体的空隙的主体区域2，其基本形状为八面体，多面体的角部为弯曲形状，内壁氧化膜去除空隙缺陷。通过进行热处理方法来提供硅晶片，当将通过CZ方法制造的硅晶片经受RTP时，将待供给的气体，空间的内部压力和最大可实现温度设定为预定值。

10. 发明授权

US08071920B2 Planar heater 有权
标题翻译：平面加热器
公开(公告)号：US08071920B2
公开(公告)日：2011-12-06
申请号：US12270094
申请日：2008-11-13
申请人： Kazuhiko Shimanuki , Daisuke Hayashi
发明人： Kazuhiko Shimanuki , Daisuke Hayashi
IPC分类号： H05B3/68 , H05B3/08
CPC分类号： H01L21/67103 , H05B3/143
摘要： A planar heater 1 in which a power supply terminal unit 108 which supplies an electric power is arranged on a central portion on a lower surface of a silica glass plate-like member 102. The power supply terminal unit includes small-diameter silica glass tubes 105a and 106a, which contain a connection line which supplies an electric power to a carbon heat generator and a large-diameter silica glass tube 2 which contains the small-diameter silica glass tubes 105a and 106a. A flange portion 2a is formed on a lower end of the large-diameter silica glass tube 2, and a bent portion 2b having different diameters is formed between an upper end of the large-diameter silica glass and the flange portion 2a, and the first heat shielding plates 19, 20 and 21 configured by metal plates or opaque silica glass plates are contained in the large-diameter silica glass tube below the bent portion.
摘要翻译：在石英玻璃板状构件102的下表面的中央部配置有供电端子单元108供给电力的平面加热器1.电源端子单元包括小直径石英玻璃管105a 和106a，其包含向碳发生器供给电力的连接线和包含小直径石英玻璃管105a和106a的大直径石英玻璃管2。在大直径石英玻璃管2的下端形成有凸缘部2a，在大直径石英玻璃的上端和凸缘部2a之间形成具有不同直径的弯曲部2b，由金属板或不透明石英玻璃板构成的隔热板19,20和21包含在弯曲部分下方的大直径石英玻璃管中。

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