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1. 发明授权

US08637960B2 Nitride semiconductor substrate 有权
标题翻译：氮化物半导体衬底
公开(公告)号：US08637960B2
公开(公告)日：2014-01-28
申请号：US13633473
申请日：2012-10-02
申请人： Covalent Materials Corporation
发明人： Yoshihisa Abe , Jun Komiyama , Hiroshi Oishi , Akira Yoshida , Kenichi Eriguchi , Shunichi Suzuki
IPC分类号： H01L29/20
CPC分类号： H01L29/155 , H01L29/2003 , H01L29/7787
摘要： A nitride semiconductor substrate is provided in which leak current reduction and improvement in current collapse are effectively attained when using Si single crystal as a base substrate. The nitride semiconductor substrate is such that an active layer of a nitride semiconductor is formed on one principal plane of a Si single crystal substrate through a plurality of buffer layers made of a nitride, in the buffer layers, a carbon concentration of a layer which is in contact with at least the active layer is from 1×1018 to 1×1020 atoms/cm3, a ratio of a screw dislocation density to the total dislocation density is from 0.15 to 0.3 in an interface region between the buffer layer and the active layer, and the total dislocation density in the interface region is 15×109 cm−2 or less.
摘要翻译：提供一种氮化物半导体衬底，其中当使用Si单晶作为基底衬底时，可有效地获得漏电流的减小和电流塌陷的改善。氮化物半导体衬底是这样的：氮化物半导体的有源层通过在氮化物中形成的多个缓冲层在Si单晶衬底的一个主平面上形成在缓冲层中的层的碳浓度为与至少活性层接触为1×1018〜1×1020原子/ cm3，在缓冲层和活性层之间的界面区域中，螺旋位错密度与总位错密度的比例为0.15〜0.3 界面区域的总位错密度为15×109cm -2以下。

2. 发明申请

US20140055783A1 METHOD OF ANALYZING NITRIDE SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE USING THE ANALYSIS METHOD 有权
标题翻译：分析氮化物半导体层的方法和使用分析方法制造氮化物半导体衬底的方法
公开(公告)号：US20140055783A1
公开(公告)日：2014-02-27
申请号：US13975413
申请日：2013-08-26
申请人： Covalent Materials Corporation
发明人： Yoshihata YANASE , Hiroshi Shirai , Jun Komiyama , Hiroshi Oishi
IPC分类号： G01J3/42
CPC分类号： G01J3/42 , G01N21/33 , G01N21/3563 , G01N21/55 , G01N2021/3568
摘要： A method of analyzing a nitride semiconductor layer in which a mixing ratio at a ternary mixed-crystal nitride semiconductor layer can be analyzed non-destructively, simply, and precisely, even its surface is covered with a cap layer is provided. The nitride semiconductor layer having an AN layer or a BN layer with a thickness of 0.5 to 10 nm that is stacked on an AxB1-xN layer (A and B: 13 group elements, 0≦x≦1) is subjected to reflection spectroscopy to obtain a reflection spectrum of the AxB1-xN layer. Let an energy value in a peak position of the reflection spectrum be a band gap energy Egap, and let a band gap energy value of AxB1-xN (x=1) be EA and a band gap energy value of AxB1-xN (x=0) be EB, x is calculated from Equation Egap=(1−x)EB+xEA−bx(1−x) (where b is bowing parameter corresponding to A and B).
摘要翻译：提供了分析氮化物半导体层的方法，其中可以非破坏性地，简单地且精确地，甚至其表面被覆盖层覆盖三元混合氮化物半导体层的混合比。叠层在AxB1-xN层（A和B：13组元素，0 @ x @）上的具有厚度为0.5至10nm的AN层或BN层的氮化物半导体层经受反射光谱法获得AxB1-xN层的反射光谱。使反射光谱的峰值位置的能量值为带隙能量Egap，使AxB1-xN（x = 1）的带隙能量值为EA，将AxB1-xN的带隙能量值（x = 0）为EB，x由等式Egap =（1-x）EB + xEA-bx（1-x）（其中b是对应于A和B的弯曲参数）计算。

3. 发明授权

US09117743B2 Nitride semiconductor substrate 有权
标题翻译：氮化物半导体衬底
公开(公告)号：US09117743B2
公开(公告)日：2015-08-25
申请号：US14271521
申请日：2014-05-07
申请人： Covalent Materials Corporation
发明人： Jun Komiyama , Akira Yoshida , Hiroshi Oishi
IPC分类号： H01L29/12 , H01L29/20 , H01L21/3205 , H01L29/10 , H01L21/02 , H01L29/778
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/1075 , H01L29/7786
摘要： A nitride semiconductor substrate suitable for a high withstand voltage power device is provided in which current collapse is controlled, while reducing leakage current. In a nitride semiconductor substrate, wherein a buffer layer, an active layer, and an electron supply layer, each comprising a group 13 nitride, are stacked one by one on a silicon single crystal substrate, the buffer layer has a structure where a multilayer stack in which a pair of nitride layers having different concentrations of Al or Ga are repeatedly deposited a plurality of times on an initial layer of AlxGa1−xN (0≦x≦1) is stacked, and includes a doping layer whose carbon concentration is 1×1018 to 1×1021 cm−3 and whose Si concentration is 1×1017 to 1×1020 cm−3, a thickness of the doping layer is 15% or more of the total thickness of the buffer layer.
摘要翻译：提供适用于高耐压功率器件的氮化物半导体衬底，其中电流崩溃被控制，同时减少漏电流。在氮化硅半导体衬底中，其中每个包含13族氮化物的缓冲层，有源层和电子供给层在硅单晶衬底上一个一个堆叠，缓冲层具有多层叠层其中在Al x Ga 1-x N（0＆amp; nlE; x＆lt; 1 | 1）的初始层上重复沉积多个Al或Ga的不同浓度的一对氮化物层，并且包括碳浓度为1× 1018〜1×1021cm-3，Si的浓度为1×1017〜1×1020cm-3，掺杂层的厚度为缓冲层的总厚度的15％以上。

4. 发明授权

US09536955B2 Nitride semiconductor substrate 有权
标题翻译：氮化物半导体衬底
公开(公告)号：US09536955B2
公开(公告)日：2017-01-03
申请号：US14258181
申请日：2014-04-22
申请人： COVALENT MATERIALS CORPORATION
发明人： Jun Komiyama , Kenichi Eriguchi , Akira Yoshida , Hiroshi Oishi , Yoshihisa Abe , Shunichi Suzuki
IPC分类号： H01L29/205 , H01L29/20 , H01L29/167 , H01L29/165 , H01L21/02 , H01L29/04 , H01L29/778
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/7786
摘要： A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a Si substrate when forming a thick nitride semiconductor layer on the substrate. A nitride semiconductor substrate 1 is prepared in such a manner that a buffer layer 3 and a semiconductor active layer 4 each comprising a group 13 nitride are stacked one by one on one principal plane of a Si single crystal substrate, the one principal plane has an offset angle of 0.1° to 1° or −1° to −0.1° with respect to a (111) plane, an average dopant concentration in a bulk is 1×1018 to 1×1021 cm−3, the Si single crystal substrate 2 has a SiO2 film on the back, and the total thickness of the buffer layer 3 and the semiconductor active layer 4 is 4 to 10 μm.
摘要翻译：提供一种氮化物半导体衬底，其适用于高耐压功率器件，并且在衬底上形成厚的氮化物半导体层时，可防止在Si衬底中产生翘曲和裂纹。制备氮化物半导体衬底1，使得每个包含13族氮化物的缓冲层3和半导体活性层4在Si单晶衬底的一个主平面上逐一层叠，一个主平面具有偏移角相对于（111）面为0.1°〜1°或-1°〜-0.1°，本体的平均掺杂剂浓度为1×1018〜1×1021cm-3，Si单晶基板2 在背面具有SiO 2膜，缓冲层3和半导体活性层4的总厚度为4〜10μm。

5. 发明授权

US09086321B2 Method of analyzing nitride semiconductor layer and method of manufacturing nitride semiconductor substrate using the analysis method 有权
标题翻译：使用分析方法分析氮化物半导体层的方法和制造氮化物半导体衬底的方法
公开(公告)号：US09086321B2
公开(公告)日：2015-07-21
申请号：US13975413
申请日：2013-08-26
申请人： Covalent Materials Corporation
发明人： Yoshihata Yanase , Hiroshi Shirai , Jun Komiyama , Hiroshi Oishi
IPC分类号： G01N21/00 , G01J3/42 , G01N21/33 , G01N21/3563 , G01N21/55
CPC分类号： G01J3/42 , G01N21/33 , G01N21/3563 , G01N21/55 , G01N2021/3568
摘要： A method of analyzing a nitride semiconductor layer in which a mixing ratio at a ternary mixed-crystal nitride semiconductor layer can be analyzed non-destructively, simply, and precisely, even its surface is covered with a cap layer is provided. The nitride semiconductor layer having an AN layer or a BN layer with a thickness of 0.5 to 10 nm that is stacked on an AxB1-xN layer (A and B: 13 group elements, 0≦x≦1) is subjected to reflection spectroscopy to obtain a reflection spectrum of the AxB1-xN layer. Let an energy value in a peak position of the reflection spectrum be a band gap energy Egap, and let a band gap energy value of AxB1-xN (x=1) be EA and a band gap energy value of AxB1-xN (x=0) be EB, x is calculated from Equation Egap=(1−x)EB+xEA−bx(1−x) (where b is bowing parameter corresponding to A and B).
摘要翻译：提供了分析氮化物半导体层的方法，其中可以非破坏性地，简单地且精确地，甚至其表面被覆盖层覆盖三元混合氮化物半导体层的混合比。层叠在AxB1-xN层（A和B：13组元素，0＆amp; nlE; x＆lt; 1; 1）上的厚度为0.5〜10nm的AN层或BN层的氮化物半导体层进行反射光谱学获得AxB1-xN层的反射光谱。使反射光谱的峰值位置的能量值为带隙能量Egap，使AxB1-xN（x = 1）的带隙能量值为EA，将AxB1-xN的带隙能量值（x = 0）为EB，x由等式Egap =（1-x）EB + xEA-bx（1-x）（其中b是对应于A和B的弯曲参数）计算。

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