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1. 发明申请

US20130078588A1 METHOD FOR HEAT-TREATING SILICON WAFER 审中-公开
标题翻译：热处理硅砂的方法
公开(公告)号：US20130078588A1
公开(公告)日：2013-03-28
申请号：US13626151
申请日：2012-09-25
申请人： Takeshi Senda , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Susumu Maeda
发明人： Takeshi Senda , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Susumu Maeda
IPC分类号： F27D3/00
CPC分类号： H01L21/3225 , H01L21/67115
摘要： A method for heat-treating a silicon wafer is provided in which in-plane uniformity in BMD density along a diameter of a bulk of the wafer grown by the CZ process can be improved. Further, a method for heat-treating a silicon wafer is provided in which in-plane uniformity in BMD size can also be improved and COP of a surface layer of the wafer can be reduced. The method includes a step of a first heat treatment in which the CZ silicon wafer is heated to a temperature from 1325 to 1400° C. in an oxidizing gas atmosphere, held at the temperature, and then cooled at a cooling rate of from 50 to 250° C./second, and a step of a second heat treatment in which the wafer is heated to a temperature from 900 to 1200° C. in a non-oxidizing gas atmosphere, held at the temperature, and then cooled.
摘要翻译：提供了一种用于热处理硅晶片的方法，其中可以提高沿着通过CZ工艺生长的晶片的大部分直径的BMD密度的面内均匀性。此外，提供了一种用于热处理硅晶片的方法，其中还可以提高BMD尺寸内的面内均匀性，并且可以降低晶片的表面层的COP。该方法包括第一热处理步骤，其中将CZ硅晶片在氧化气体气氛中加热至1325〜1400℃，保持该温度，然后以50〜 250℃/秒，以及在非氧化性气体气氛中将晶片加热至900〜1200℃的温度的第二热处理工序，然后冷却。

2. 发明申请

US20080166891A1 HEAT TREATMENT METHOD FOR SILICON WAFER 审中-公开
标题翻译：硅砂热处理方法
公开(公告)号：US20080166891A1
公开(公告)日：2008-07-10
申请号：US11965214
申请日：2007-12-27
申请人： Manabu Hirasawa , Koji Izunome , Koji Araki , Tatsuhiko Aoki
发明人： Manabu Hirasawa , Koji Izunome , Koji Araki , Tatsuhiko Aoki
IPC分类号： H01L21/00
CPC分类号： H01L21/324 , H01L21/3247
摘要： The present invention provides a heat treatment method for a silicon wafer in which, with respect to a surface of the silicon wafer made flat at an atomic level by a high-temperature heat-treatment at 1,100° C. or more, a surface roughness of the wafer can be reduced compared with the conventional one while maintaining a step terrace structure on the surface of the above-mentioned wafer, and the surface of such a wafer can be formed stably. In the heat treatment method for the silicon wafer in which the step terrace structure is formed on the surface of the silicon wafer, after the silicon wafer is heat treated at 1,100° C. or more in a heat treatment furnace in a reducing gas or inert gas atmosphere, the atmosphere in the furnace is arranged to be of argon gas at a temperature of 500° C. or more in the furnace when reducing the temperature and argon gas continues to be introduced into the furnace until the silicon wafer is removed from the furnace, so that the step terrace structure on the surface of the above-mentioned silicon wafer may be maintained and a root mean square roughness Rms per 3 μm×3 μm may be 0.06 nm or less.
摘要翻译：本发明提供了一种硅晶片的热处理方法，其中，通过在1100℃以上的高温热处理，使硅晶片的表面以原子级平坦化，表面粗糙度与上述晶片相比，可以减少晶片，同时在上述晶片的表面上保持阶梯式平台结构，并且可以稳定地形成这种晶片的表面。在硅晶片的表面上形成阶梯式台面结构的硅晶片的热处理方法中，在热处理炉中在1100℃以上的硅晶片在还原性气体或惰性气体中进行热处理气体气氛中，炉内的气氛在炉内放置500℃以上的氩气，降低温度，继续向炉内引入氩气，直到硅晶片从可以维持上述硅晶片表面上的阶梯式平台结构，并且每3mum×3mum的均方根粗糙度Rms可以为0.06nm以下。

3. 发明申请

US20120139088A1 SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER 有权
标题翻译：硅陶瓷及其加热处理方法
公开(公告)号：US20120139088A1
公开(公告)日：2012-06-07
申请号：US13322080
申请日：2010-05-28
申请人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima , Hiroyuki Saito
发明人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima , Hiroyuki Saito
IPC分类号： H01L29/02 , H01L21/26
CPC分类号： H01L21/3225 , Y10S438/928
摘要： A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.
摘要翻译：提供了一种用于防止大块区域中的空隙缺陷成为装置处理中的污染源和滑移产生的硅晶片。并且提供了一种用于在晶片表面附近的区域中减少诸如COP之类的晶体缺陷的热处理方法作为器件有源区。硅晶片具有作为无缺陷区域的表面区域1和包括多面体的空隙的主体区域2，其基本形状为八面体，多面体的角部为弯曲形状，内壁氧化膜去除空隙缺陷。通过进行热处理方法来提供硅晶片，当将通过CZ方法制造的硅晶片经受RTP时，将待供给的气体，空间的内部压力和最大可实现温度设定为预定值。

4. 发明申请

US20070065269A1 Pallet for coiled carrying article, loading structure for loading coiled carrying article on pallet, stacking structure for stacking carrying article loading pallets and method for using the same, containing structure for containing stacked coiled carrying article loading pallets into transport receptacle and transport method therefor, and coiled carrying article transport method 审中-公开
标题翻译：用于卷取运送物品的托盘，托盘上卷取的运载物品的装载结构，用于堆放搬运物品装载托盘的堆叠结构及其使用方法，包含用于将堆放的卷绕的运送物品装载在托盘中的运输装置的结构和运输方法，以及卷取携带物品运输方式
公开(公告)号：US20070065269A1
公开(公告)日：2007-03-22
申请号：US10544505
申请日：2003-02-07
申请人： Tatsuhiko Aoki , Nobuaki Itou , Nobuhiro Kato
发明人： Tatsuhiko Aoki , Nobuaki Itou , Nobuhiro Kato
IPC分类号： B65G57/16
CPC分类号： B65D85/04 , B65D19/02 , B65D2519/00024 , B65D2519/00059 , B65D2519/00233 , B65D2519/00268 , B65D2519/00273 , B65D2519/00298 , B65D2519/00333 , B65D2519/00348 , B65D2519/00562 , B65D2519/00676 , B65D2519/00771 , B65D2519/00815 , B65D2519/0097
摘要： This invention intends to provide a coiled carrying article pallet, which is suited for transporting small quantities of varied types of articles, which can easily, deliberately, efficiently transporting a coiled carrying article to a transport receptacle without damaging the coiled transport article, which can transport the coiled carrying article with transport cost being held down, and which can improve space efficiency for storage, and the like. The pallet P1 is a coiled carrying article pallet P1 contained in a transport receptacle (container A) while loading the coiled carrying article C, the pallet P1 including a pallet main body 1, and a stack support means 5, provided on the pallet main body, for vertically stacking and supporting another pallet P1, and the pallet main body 1 includes a mount section 3 on which the axial end face of the carrying article can be mounted, and an abutment section 2 provided on an outer peripheral side of the mount section and arranging a plurality of carrying articles in a zigzag fashion.
摘要翻译：本发明旨在提供一种盘绕的携带物品托盘，其适于运输少量各种类型的物品，其可以容易地，有意地有效地将卷绕的携带物品运输到运输容器而不损坏能够运输的卷绕的运输物品具有运输成本的卷绕的携带物品被压下，并且可以提高储存空间效率等。托盘P 1是在装载卷绕的携带物品C的托盘P 1，包括托盘主体1的托盘P 1和设置在托盘主体1上的托盘支撑装置5的同时，将托盘P 1装载在运送用容器（容器A）用于垂直堆叠并支撑另一个托盘P 1的托盘主体，并且托盘主体1包括安装部分3，可在其上安装运载物品的轴向端面的安装部分3和设置在外周侧的抵接部分2 并且以锯齿形的方式布置多个携带物品。

5. 发明授权

US07188816B2 Pallet for coil-like transferred object, structural body for loading coil-like transferred object on pallet, structural body for storing coil-like transferred object loading pallet in container, and transferring method 有权
标题翻译：用于盘管状转移物体的托盘，用于在托盘上装载线圈状转移物体的结构体，用于储存容纳线圈状转移物体的托盘的结构体和转移方法
公开(公告)号：US07188816B2
公开(公告)日：2007-03-13
申请号：US10380957
申请日：2002-08-09
申请人： Tatsuhiko Aoki , Nobuaki Itou , Nobuhiro Kato
发明人： Tatsuhiko Aoki , Nobuaki Itou , Nobuhiro Kato
IPC分类号： A47B91/00 , A47G29/00 , B65D19/00
CPC分类号： B65D19/44 , B65D19/0091 , B65D85/04 , B65D90/004 , B65D2519/00024 , B65D2519/00059 , B65D2519/00273 , B65D2519/00293 , B65D2519/00323 , B65D2519/00333 , B65D2519/00338 , B65D2519/00373 , B65D2519/00562 , B65D2519/00815 , B65D2519/0094 , B65D2519/0096 , B65D2590/0058
摘要： A pallet P of the present invention consists of a pallet main body 1, four mount sections 2 provided on the pallet main body 1, and a lower open space 5 provided below the pallet main body 1 and having open four sides. The pallet main body 1 has an abutment frame section 3 which can abut on an inner wall of a dry container A and other pallets P. According to this pallet P, if a predetermined number of pallets P are contained in the container A, the abutment frame sections 3 abut on the other pallets P, whereby a predetermined number of coiled carrying articles C which are loaded on the pallets P vertically are arranged in a zigzag fashion.
摘要翻译：本发明的托盘P包括托盘主体1，设置在托盘主体1上的四个安装部分2和设置在托盘主体1下方并具有开口四边的下部开放空间5。托盘主体1具有抵靠框架部分3，其可以抵靠在干燥容器A和其他托盘P的内壁上。根据该托盘P，如果在容器A中容纳预定数量的托盘P，框架部分3邻接在另一个托盘P上，从而以锯齿形的方式布置预定数量的装载在托盘P上的卷绕的运送物品C.

6. 发明授权

US08999864B2 Silicon wafer and method for heat-treating silicon wafer 有权
标题翻译：硅晶片和硅晶片热处理方法
公开(公告)号：US08999864B2
公开(公告)日：2015-04-07
申请号：US13322080
申请日：2010-05-28
申请人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima , Hiroyuki Saito
发明人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima , Hiroyuki Saito
IPC分类号： H01L21/26 , H01L21/00 , H01L21/322
CPC分类号： H01L21/3225 , Y10S438/928
摘要： A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.
摘要翻译：提供了一种用于防止大块区域中的空隙缺陷成为装置处理中的污染源和滑移产生的硅晶片。并且提供了一种用于在晶片表面附近的区域中减少诸如COP之类的晶体缺陷的热处理方法作为器件有源区。硅晶片具有作为无缺陷区域的表面区域1和包括多面体的空隙的主体区域2，其基本形状为八面体，多面体的角部为弯曲形状，内壁氧化膜去除空隙缺陷。通过进行热处理方法来提供硅晶片，当将通过CZ方法制造的硅晶片经受RTP时，将待供给的气体，空间的内部压力和最大可实现温度设定为预定值。

7. 发明授权

US08252700B2 Method of heat treating silicon wafer 有权
标题翻译：硅晶片热处理方法
公开(公告)号：US08252700B2
公开(公告)日：2012-08-28
申请号：US12656232
申请日：2010-01-21
申请人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Kumiko Murayama , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima
发明人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Kumiko Murayama , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C30B33/02 , C30B29/06 , C30B33/005 , H01L21/3225 , H01L21/324 , H01L21/67109
摘要： In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.
摘要翻译：在通过切片由切克劳斯基法制造的硅单晶锭进行切片而得到的晶片的热处理方法中，通过将保持时间设定为1200℃以上的最终温度，进行快速加热/冷却热处理，在含有氧分压为1.0％以上且20％以下的氧和氩气的混合气体气氛中，硅的熔点以下等于或大于1秒且等于或小于60秒，因此在硅晶片的表面上形成厚度为9.1nm以下或24.3nm以上的氧化膜。

8. 发明申请

US20060106684A1 Cargo distribution management system, palette management system, and computer-readable storage medium and program used for them 审中-公开
标题翻译：货物分配管理系统，调色板管理系统以及计算机可读存储介质和程序
公开(公告)号：US20060106684A1
公开(公告)日：2006-05-18
申请号：US10528580
申请日：2003-09-26
申请人： Tatsuhiko Aoki , Toshitake Watarai , Kouichi Tsuruta
发明人： Tatsuhiko Aoki , Toshitake Watarai , Kouichi Tsuruta
IPC分类号： G06Q99/00
CPC分类号： G06Q10/08 , G06Q10/087
摘要： This invention provides a cargo distribution management system, a pallet management system, and a computer readable recording medium capable of facilitating reducing time required for distribution using containers by marine transport or the like, acquiring information for time reduction, and decreasing distribution cost. A cargo distribution management system program executed by a server computer 1 of the system includes storage means 102, distribution status instruct means 103, distribution status output means 104, procedural document creation means 107, container packing information generation means 108, stock calculation means 109, stock planning means 110, distribution period calculation means 112, pallet information storage means 121, pallet information update means 122, transport scheduling means 123, and reference information transmission means 113.
摘要翻译：本发明提供了一种货物分配管理系统，托盘管理系统和计算机可读记录介质，能够有助于减少通过海上运输等使用集装箱分配所需的时间，获取时间缩短的信息和降低分配成本。由系统的服务器计算机1执行的货物分配管理系统程序包括存储装置102，分配状态指令装置103，分配状态输出装置104，程序文档创建装置107，容器打包信息生成装置108，库存计算装置109，库存计划装置110，分配期间计算装置112，托盘信息存储装置121，托盘信息更新装置122，运输调度装置123和参考信息发送装置113。

9. 发明授权

US06808356B2 Device for carrying article into and from container, method for introducing and discharging article into and from container, and pallet for carrying article 有权
标题翻译：用于将物品运送到集装箱内的装置，用于将物品引入和从容器中排出的方法以及用于携带物品的托盘的装置
公开(公告)号：US06808356B2
公开(公告)日：2004-10-26
申请号：US10017505
申请日：2001-12-18
申请人： Nobuo Iwasaki , Tatsuhiko Aoki , Kouichi Tsuruta
发明人： Nobuo Iwasaki , Tatsuhiko Aoki , Kouichi Tsuruta
IPC分类号： B65D1944
CPC分类号： B65D88/546 , B60P1/52 , B65G13/12 , B65G67/20
摘要： The purpose of the invention is to provide a device convenient for carrying pallet loaded with article into and/or from container. The introducing device 3 is comprised of: the stage 5; the first lifting/sliding devices 13a, 13b, 13c and 13d, which support the pallet 11 to allow it to move horizontally while keeping it lifting up to the floor surface of the stage; and the second lifting/sliding devices 29a, 29b, 29c and 29d, which receive the pallet from the first lifting/sliding devices and support it to allow it to move horizontally while keeping it lifting up to the floor surface of the container 2. The introducing device 3 is possible to be used for discharging operations.
摘要翻译：本发明的目的是提供一种方便地将装载有物品的托盘装载到和/或从容器中的装置。导入装置3包括：台架5; 第一提升/滑动装置13a，13b，13c和13d，其支撑托板11以允许其水平移动，同时保持其提升到台的地板表面; 以及第二提升/滑动装置29a，29b，29c和29d，其从第一提升/滑动装置接收托盘并支撑它以允许其水平移动，同时保持它提升到容器2的地板表面。引入装置3可以用于放电操作。

10. 发明授权

US08399341B2 Method for heat treating a silicon wafer 有权
标题翻译：硅晶片热处理方法
公开(公告)号：US08399341B2
公开(公告)日：2013-03-19
申请号：US13387125
申请日：2010-05-17
申请人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Kumiko Murayama , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima
发明人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Kumiko Murayama , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima
IPC分类号： H01L21/20
CPC分类号： H01L21/3225
摘要： The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to T1 of 1300° C. or higher and the melting point of silicon or lower, keeping the wafer at T1, rapidly cooling the wafer to T2 of 400-800° C. and keeping the wafer at T2; and performing a second heat treatment while introducing an oxygen gas in an amount of 20-100 vol. %, the second heat treatment comprising the steps of keeping the wafer at T2, rapidly heating the wafer from T2 to T3 of 1250° C. or higher and the melting point of silicon or lower, keeping the wafer at T3 and rapidly cooling the wafer.
摘要翻译：本发明是提供一种硅晶片的热处理方法，其减少了生长中的缺陷，同时抑制了RTP期间的滑移产生并提高了晶片的表面粗糙度。该方法在引入稀有气体的同时进行第一热处理，第一热处理包括将晶片快速加热至T1至1300℃或更高的温度，以及将晶片保持在T1处的硅的熔点或更低的温度，迅速地将晶片冷却至T2至400-800℃，并将晶片保持在T2; 并且在引入20-100体积％的氧气的同时进行第二热处理。％，第二热处理包括将晶片保持在T2的步骤，将晶片从T2快速加热至T3，达到1250℃或更高，硅的熔点或更低，使晶片保持在T3，并快速冷却晶片。

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