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81. 发明申请

US20130278315A1 DUAL-TRIGGER LOW-ENERGY FLIP-FLOP CIRCUIT 有权
标题翻译：双触发低能量FLIP-FLOP电路
公开(公告)号：US20130278315A1
公开(公告)日：2013-10-24
申请号：US13921138
申请日：2013-06-18
申请人： NVIDIA Corporation
发明人： William J. Dally , Jonah M. Alben , John W. Poulton , Ge Yang
IPC分类号： H03K3/36
CPC分类号： H03K3/36 , H03K3/012 , H03K3/356121
摘要： One embodiment of the present invention sets forth a technique for technique for capturing and storing a level of an input signal using a dual-trigger low-energy flip-flop circuit that is fully-static and insensitive to fabrication process variations. The dual-trigger low-energy flip-flop circuit presents only three transistor gate loads to the clock signal and none of the internal nodes toggle when the input signal remains constant. One of the clock signals may be a low-frequency “keeper clock” that toggles less frequently than the other two clock signal that is input to two transistor gates. The output signal Q is set or reset at the rising clock edge using separate trigger sub-circuits. Either the set or reset may be armed while the clock signal is low, and the set or reset is triggered at the rising edge of the dock.
摘要翻译：本发明的一个实施例提出了一种技术，用于使用完全静态且对制造工艺变化不敏感的双触发低能量触发器电路来捕获和存储输入信号电平的技术。双触发低能触发器电路仅向时钟信号提供三个晶体管栅极负载，并且当输入信号保持恒定时，内部节点都不会切换。时钟信号之一可以是低频“保持时钟”，其比输入到两个晶体管栅极的另外两个时钟信号频率更低。输出信号Q在上升时钟沿使用分离的触发子电路设置或复位。当时钟信号为低电平时，设置或复位可能被布防，并且在基座的上升沿触发置位或复位。

82. 发明申请

US20130222071A1 Oscillator based on a 6T SRAM for measuring the Bias Temperature Instability 有权
标题翻译：基于6T SRAM的振荡器，用于测量偏置温度不稳定性
公开(公告)号：US20130222071A1
公开(公告)日：2013-08-29
申请号：US13484648
申请日：2012-05-31
申请人： Ching-Te Chuang , Shyh-Jye Jou , Wei Hwang , Ming-Chien Tsai , Yi-Wei Lin , Hao-I Yang , Ming-Hsien Tu , Wei-Chiang Shih , Nan-Chun Lien , Kuen-Di Lee
发明人： Ching-Te Chuang , Shyh-Jye Jou , Wei Hwang , Ming-Chien Tsai , Yi-Wei Lin , Hao-I Yang , Ming-Hsien Tu , Wei-Chiang Shih , Nan-Chun Lien , Kuen-Di Lee
IPC分类号： H03K3/36
CPC分类号： G11C29/12015 , G11C7/04 , G11C11/41 , G11C11/417 , G11C29/50 , G11C2029/5002 , H03K3/0315
摘要： The present invention provides an oscillator which is based on a 6T SRAM for measuring the Bias Temperature Instability. The oscillator includes a first control unit, a first inverter, a second control unit, and a second inverter. The first control unit is coupled with the first inverter. The second control unit is coupled with the second inverter. The first control unit and the second control unit is used to control the first inverter and the second inverter being selected, biased, and connected respectively, so that the NBTI and the PBTI of the SRAM can be measured separately, and the real time stability of the SRAM can be monitored immediately.
摘要翻译：本发明提供一种基于用于测量偏压温度不稳定性的6T SRAM的振荡器。振荡器包括第一控制单元，第一反相器，第二控制单元和第二反相器。第一控制单元与第一逆变器耦合。第二控制单元与第二逆变器耦合。第一控制单元和第二控制单元用于分别选择，偏置和连接第一反相器和第二反相器，使得可以分别测量SRAM的NBTI和PBTI，并且实时稳定性可以立即监视SRAM。

83. 发明申请

US20130200956A1 RELAXATION OSCILLATOR 有权
标题翻译：放松振荡器
公开(公告)号：US20130200956A1
公开(公告)日：2013-08-08
申请号：US13612795
申请日：2012-09-12
申请人： Keng-Jan HSIAO
发明人： Keng-Jan HSIAO
IPC分类号： H03K3/36
CPC分类号： H03K5/153 , G01R19/10 , H03K3/0231 , H03K3/36 , H03K4/502 , H03K5/2472
摘要： A relaxation oscillator is provided. A first current source provides a first current. A second current source provides a second current. A resistive element is coupled between the first current source and a ground. A capacitive element is coupled between the second current source and the ground. A comparator has a non-inverting input terminal, an inverting input terminal and an output terminal for outputting a compare result. A clock generator provides a clock signal according to the compare result. A switching unit alternately couples the non-inverting input terminal and the inverting input terminal of the comparator to the resistive element and the capacitive element according to the clock signal.
摘要翻译：提供张弛振荡器。第一电流源提供第一电流。第二电流源提供第二电流。电阻元件耦合在第一电流源和地之间。电容元件耦合在第二电流源和地之间。比较器具有非反相输入端子，反相输入端子和用于输出比较结果的输出端子。时钟发生器根据比较结果提供时钟信号。开关单元根据时钟信号将比较器的非反相输入端子和反相输入端子交替耦合到电阻元件和电容元件。

84. 发明申请

US20130169372A1 PULSE GENERATOR AND SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：脉冲发生器和半导体集成电路
公开(公告)号：US20130169372A1
公开(公告)日：2013-07-04
申请号：US13658108
申请日：2012-10-23
申请人： FUJITSU Limited
发明人： Yoichi KAWANO , Toshihide SUZUKI
IPC分类号： H03K3/64 , H03K3/36
CPC分类号： H03K3/354 , H04B1/7174
摘要： A pulse generator includes an oscillation circuit that generates a burst signal oscillated for ultrawideband band and a generation circuit that generates a trigger signal that causes oscillation by the oscillation circuit to be started.
摘要翻译：脉冲发生器包括产生用于超宽带频带振荡的突发信号的振荡电路和产生引起振荡电路振荡的触发信号的发生电路。

85. 发明申请

US20130163289A1 POWER SWITCHING DRIVING APPARATUS, AND POWER FACTOR CORRECTION DEVICE AND POWER SUPPLY DEVICE HAVING THE SAME 审中-公开
标题翻译：电源切换驱动装置和功率因数校正装置及具有该功能的电源装置
公开(公告)号：US20130163289A1
公开(公告)日：2013-06-27
申请号：US13405791
申请日：2012-02-27
申请人： Myeung Su KIM , Koon Shik CHO , Jae Hyung LEE , Kwang Mook LEE
发明人： Myeung Su KIM , Koon Shik CHO , Jae Hyung LEE , Kwang Mook LEE
IPC分类号： H03K3/36 , G05F1/46 , H02M3/335
CPC分类号： H02M1/4225 , H02M3/335 , H03K17/0412 , Y02B70/126 , Y02P80/112
摘要： There are provided a power switching driving apparatus able to reduce a circuit area and increase a driving speed, and a power factor correction device and a power supply device having the same. The power switching driving apparatus includes: a first driving unit providing a switching signal in response to a control signal from the outside; a second driving unit including first and second NMOS FETs cascode-connected between an operational power source terminal supplying pre-set operation power and a ground, and performing switching complimentarily in response to the switching signal to provide a switching control signal controlling power switching; a current supply unit supplying a current for driving the second driving unit; and a voltage maintaining unit maintaining a voltage for driving the second driving unit.
摘要翻译：提供了能够减小电路面积并提高驱动速度的电力开关驱动装置，以及功率因数校正装置和具有该功率因数校正装置的电源装置。电源开关驱动装置包括：第一驱动单元，响应于来自外部的控制信号而提供开关信号; 第二驱动单元，包括在提供预置操作功率和地之间的操作电源端子之间并联连接的第一和第二NMOS FET，以及响应于所述切换信号而补充地进行切换以提供控制功率切换的开关控制信号; 提供用于驱动第二驱动单元的电流的电流供应单元; 以及保持用于驱动第二驱动单元的电压的电压保持单元。

86. 发明授权

US5039958A Integrated semiconductor device including an insulated-gate field effect transistor biased to a constant level in order to produce a negative differential drain conductance zone 失效
标题翻译：集成半导体器件包括偏置到恒定电平的绝缘栅场效应晶体管，以产生负的差分漏极导电区
公开(公告)号：US5039958A
公开(公告)日：1991-08-13
申请号：US467628
申请日：1990-01-19
申请人： Etienne Delhaye , Michel Wolny , Thierry Aguila , Ramesh Pyndiah
发明人： Etienne Delhaye , Michel Wolny , Thierry Aguila , Ramesh Pyndiah
IPC分类号： H01L29/78 , G11C11/39 , H01L21/338 , H01L29/812 , H03B7/06 , H03K3/36
CPC分类号： H03K3/36 , G11C11/39 , H03B7/06
摘要： An integrated semiconductor device, including an insulated-gate field effect transistor biased to a constant level in order to obtain for the transistor an N-shaped drain-source current characteristic as a function of the drain-source voltage so that it presents a negative differential conductance zone, characterized in that it comprises means for applying, between the drain and the source of the field effect transistor, a voltage whose value is in the range of values the drain-source voltage corresponding to the negative conductance zone.
摘要翻译：一种集成半导体器件，包括偏置到恒定电平的绝缘栅场效应晶体管，以便为晶体管获得作为漏 - 源电压的函数的N形漏 - 源电流特性，使得其呈现负差分电导区，其特征在于，其包括用于在场效应晶体管的漏极和源极之间施加其值在与负电导区相对应的漏极 - 源极电压的值的范围内的电压的装置。

87. 发明授权

US4849934A Logic circuit using resonant-tunneling transistor 失效
标题翻译：使用谐振隧道晶体管的逻辑电路
公开(公告)号：US4849934A
公开(公告)日：1989-07-18
申请号：US918300
申请日：1986-10-10
申请人： Naoki Yokoyama , Toshihiko Mori
发明人： Naoki Yokoyama , Toshihiko Mori
IPC分类号： G11C11/36 , G11C11/39 , H03K3/36 , H03K23/00
CPC分类号： B82Y10/00 , G11C11/36 , G11C11/39 , H03K23/00 , H03K3/36 , G11C2211/5614
摘要： A logic circuit including a resonant-tunneling transistor having a superlattice containing at least one quantum well layer, and a constant current source operatively connected between a base and an emitter of the transistor and supplying a constant current to said base. The transistor has a differential negative-resistance characteristic with at least one resonant point in a relationship between a current flowing in the base and a voltage between the base and emitter, and having at least two stable base current values at both sides of the resonant point on the characteristic, defined by the changeable base.multidot.emitter voltage. By supplying the base.multidot.emitter voltage having an amplitude of at least two amplitudes corresponding to the stable base current values, the transistor holds data corresponding to the base.multidot.emitter voltage.
摘要翻译：一种包括具有包含至少一个量子阱层的超晶格的谐振隧道晶体管的逻辑电路，以及可操作地连接在所述晶体管的基极和发射极之间的恒流源，并向所述基极提供恒定电流。晶体管具有差分负电阻特性，其具有在基极中流动的电流与基极和发射极之间的电压之间的关系中的至少一个谐振点，并且在谐振点的两侧具有至少两个稳定的基极电流值基于特征，由可变的基极电压定义。通过提供具有对应于稳定的基极电流值的至少两个幅度的幅度的基极发射器电压，晶体管保持对应于基极发射极电压的数据。

88. 发明授权

US4354122A Voltage to current converter 失效
标题翻译：电压到电流转换器
公开(公告)号：US4354122A
公开(公告)日：1982-10-12
申请号：US176346
申请日：1980-08-08
申请人： Milton L. Embree , William G. Garrett
发明人： Milton L. Embree , William G. Garrett
IPC分类号： G05F1/56 , H03F3/343 , H03K3/36
CPC分类号： G05F1/561 , H03F3/343
摘要： In situations where it is desired to provide an extremely accurate output current generated from an input voltage, errors occur in the conversion. Conventional solutions depend upon operational amplifiers and rely upon the availability of both positive and negative reference voltages. When attempting to design an integrated circuit having accurate output currents using only integrated circuit technology the circuit components introduce undesirable errors. These problems have been overcome by an arrangement which includes a current mirror (104, 105) for providing the output current and also for providing a feedback current (101, 102) for use in modifying the current flowing in an input emitter follower (103). Using this approach, the base emitter voltages of the emitter follower transistor and the input transistor of the current mirror are forced to cancel each other. By adjusting the current densities of the two transistors, substantially perfect error compensation is achieved.
摘要翻译：在希望提供从输入电压产生的非常精确的输出电流的情况下，在转换中出现错误。常规解决方案取决于运算放大器，并依赖于正和负参考电压的可用性。当仅使用集成电路技术设计具有精确输出电流的集成电路时，电路组件引入不期望的错误。这些问题已经被包括用于提供输出电流的电流镜（104,105）并且还用于提供用于修改在输入射极跟随器（103）中流动的电流的反馈电流（101,102）。使用这种方法，射极跟随器晶体管和电流镜的输入晶体管的基极发射极电压被迫彼此抵消。通过调整两个晶体管的电流密度，实现了基本上完美的误差补偿。

89. 发明授权

US4236121A Oscillators including charge-flow transistor logic elements 失效
标题翻译：振荡器包括电荷流量晶体管逻辑元件
公开(公告)号：US4236121A
公开(公告)日：1980-11-25
申请号：US893552
申请日：1978-04-05
申请人： Stephen D. Senturia
发明人： Stephen D. Senturia
IPC分类号： H03K3/02 , G01N27/414 , H01L27/088 , H01L29/423 , H01L29/49 , H03K3/354 , H03K3/356 , H03K3/36 , H03K19/094 , H03K19/0944 , H03K3/282 , H03K3/353
CPC分类号： H01L29/4983 , G01N27/4148 , H01L27/088 , H01L29/42312 , H01L29/4966 , H03K19/094 , H03K3/354 , H03K3/356017
摘要： Oscillators that include charge-flow transistor logic elements, each logic element including a charge-flow transistor and a load element, in combination. The charge-flow transistors have TURN-ON times t.sub.on and TURN-OFF times t.sub.off that can be very different from one another (e.g., t.sub.on can range from milliseconds to hundreds of seconds; whereas in the charge-flow transistors shown herein t.sub.off is typically less than one microsecond). The magnitude of t.sub.on is sensitive to the environment; hence, the period of oscillation can be used as a measure of an environmental condition.
摘要翻译：振荡器包括电荷流量晶体管逻辑元件，每个逻辑元件包括电荷流量晶体管和负载元件。电荷流量晶体管具有TURN-ON时间吨和TURN-OFF时间toff，其可以彼此非常不同（例如，ton可以在几毫秒到几百秒的范围内;而在本文中所示的电荷流量晶体管中，通常小于1微秒）。吨的大小对环境敏感; 因此，振荡周期可以用作环境条件的度量。

90. 发明授权

US4042944A Monostable multivibrator 失效
标题翻译：单稳态多谐振荡器
公开(公告)号：US4042944A
公开(公告)日：1977-08-16
申请号：US571792
申请日：1975-04-25
申请人： Tadao Yoshida
发明人： Tadao Yoshida
IPC分类号： H03K3/284 , H01L21/331 , H01L21/822 , H01L21/8247 , H01L27/04 , H01L29/00 , H01L29/73 , H01L29/788 , H01L29/792 , H03K3/35 , H03K3/36 , H01L29/78
CPC分类号： H03K3/35 , H01L29/00
摘要： A monostable multivibrator having a novel four terminal semiconductor device with a generally V-shaped emitter grounded current amplification characteristic. Means are provided to bias the operation of the device to a low point on the characteristic, to provide a trigger signal to the base of the semiconductor device for placing the device in a conducting state and, through the operation of a capacitor coupled between the gate and collector terminals, to shift the operation of the device to a high level on the emitter-grounded current amplification characteristic thereby sharply decreasing the output voltage obtained at the collector. Discharge circuit means are provided for the capacitor to gradually reduce the gate voltage and to shift the operation of the device back to the low circuit point thereby reducing the collector current and suddenly increasing the collector voltage.
摘要翻译：具有新型四端子半导体器件的单稳态多谐振荡器，具有大致V形发射极接地电流放大特性。提供了用于将器件的操作偏置到特性的低点的装置，以向半导体器件的基极提供触发信号以将器件置于导通状态，并且通过耦合在栅极之间的电容器的操作和集电极端子，将发射极接地电流放大特性的器件工作转移到高电平，从而大大降低集电极处的输出电压。为电容器提供放电电路，以逐渐降低栅极电压并将器件的工作转移回低电位点，从而降低集电极电流并突然增加集电极电压。

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