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81. 发明授权

US5733368A Method of manufacturing silicon monocrystal using continuous czochralski method 失效
标题翻译：使用连续切克劳斯基法制造单晶硅的方法
公开(公告)号：US5733368A
公开(公告)日：1998-03-31
申请号：US804123
申请日：1997-02-20
申请人： Naoki Nagai , Isamu Harada , Michiaki Oda
发明人： Naoki Nagai , Isamu Harada , Michiaki Oda
IPC分类号： C30B15/02 , C30B15/22 , C30B29/06 , H01L21/208
CPC分类号： C30B15/22 , C30B15/02 , Y10T117/1068
摘要： In a method of manufacturing a silicon monocrystal using a continuous Czochralski method, a silicon monocrystal is pulled from a silicon melt in a crucible while a silicon material is fed to the crucible. Supply of the silicon material is suspended until the temperature distribution of the silicon melt becomes stable after initiation of a straight body forming process, and the supply of the silicon material is commenced when the temperature distribution of the silicon melt has become stable. The feed rate of the silicon material is gradually increased until the feed rate becomes equal to a solidification rate of the silicon melt after the supply of the silicon material has been commenced. This method prevents the silicon monocrystal from becoming a polycrystal during the manufacture thereof.
摘要翻译：在使用连续切克劳斯基法制造硅单晶的方法中，将硅材料供给到坩埚中，从坩埚中的硅熔体中拉出硅单晶。硅材料的供给被悬浮直到硅熔体的温度分布在直体形成过程开始后变得稳定，并且当硅熔体的温度分布变得稳定时，硅材料的供应开始。硅材料的进料速率逐渐增加，直到开始供应硅材料之后，进料速率等于硅熔体的固化速率。该方法在制造时防止硅单晶成为多晶。

82. 发明授权

US5487354A Method for pulling a silicon single crystal 失效
标题翻译：拉硅单晶的方法
公开(公告)号：US5487354A
公开(公告)日：1996-01-30
申请号：US349397
申请日：1994-12-05
申请人： Wilfried von Ammon , Erich Dornberger , Hans Oelkrug , Peter Gerlach , Franz Segieth
发明人： Wilfried von Ammon , Erich Dornberger , Hans Oelkrug , Peter Gerlach , Franz Segieth
IPC分类号： C30B15/22 , C30B15/00 , C30B29/06 , H01L21/208 , C30B15/10
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1052
摘要： A method for pulling a silicon single crystal has the single crystal being pulled at a speed defined as maximum pulling speed in the vertical direction with respect to a silicon melt held in a crucible. The value of the maximum pulling speed is approximately proportional to the axial temperature gradient in the growing single crystal.
摘要翻译：拉伸硅单晶的方法具有以相对于保持在坩埚中的硅熔体的垂直方向上的最大拉伸速度限定的速度拉伸单晶。最大牵引速度的值与生长的单晶中的轴向温度梯度近似成比例。

83. 发明授权

US5379717A Method of growing single crystal of compound semiconductors 失效
标题翻译：生长化合物半导体单晶的方法
公开(公告)号：US5379717A
公开(公告)日：1995-01-10
申请号：US63344
申请日：1993-05-18
申请人： Seikoh Yoshida , Shoichi Ozawa , Toshio Kikuta
发明人： Seikoh Yoshida , Shoichi Ozawa , Toshio Kikuta
IPC分类号： C30B15/00 , C30B15/22 , C30B15/28
CPC分类号： C30B29/40 , C30B15/22 , C30B29/48 , Y10T117/1004 , Y10T117/1032
摘要： A method of growing a single semiconductor crystal with a flat top. In order to grow a single flat top crystal, the InP crystal is pulled up after the temperature drop of the melt has almost stopped, at a point in time when a meniscus at the interface of solid-liquid can be seen over the whole circumference of the surface of the melt. This prevents a facet from appearing at the shoulder portion of the crystal, thus reducing the generation of twin crystals and drastically improves retension of single crystal formation.
摘要翻译：一种生长具有平坦顶部的单个半导体晶体的方法。为了生长单个平顶晶体，在熔体的温度下降几乎停止之后InP晶体被拉起，在可以在整个圆周上看到固液界面处的弯液面的时间点熔体的表面。这防止了小面出现在晶体的肩部，从而减少了双晶的产生并且显着改善了单晶形成的延展。

84. 发明授权

US5306387A Method for pulling up semiconductor single crystal 失效
标题翻译：提高半导体单晶的方法
公开(公告)号：US5306387A
公开(公告)日：1994-04-26
申请号：US713848
申请日：1991-06-12
申请人： Izumi Fusegawa , Hirotoshi Yamagishi
发明人： Izumi Fusegawa , Hirotoshi Yamagishi
IPC分类号： C30B15/20 , C30B15/00 , C30B15/30 , C30B30/04 , H01L21/208 , C30B15/22
CPC分类号： C30B29/06 , C30B15/305
摘要： A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the rotational speed of said quartz crucible at a level exceeding 5 rpm and varying the intensity of said magnetic field applied to said molten semiconductor according to the length of pull of said single crystal rod.
摘要翻译：通过在施加磁场的情况下拉起保持在石英玻璃坩埚中的半导体熔体的方法，通过在保持在石英玻璃坩埚中的半导体熔体的方法来产生沿长度方向具有受控氧浓度分布的半导体单晶棒，该方法的特征在于固定所述石英坩埚的水平超过5rpm，并根据所述单晶棒的拉伸长度改变施加到所述熔融半导体的所述磁场的强度。

85. 发明授权

US5292486A Crystal pulling method and apparatus for the practice thereof 失效
标题翻译：水晶拉拔方法及其实施方法
公开(公告)号：US5292486A
公开(公告)日：1994-03-08
申请号：US747532
申请日：1991-08-20
申请人： Dieter Drechsel
发明人： Dieter Drechsel
IPC分类号： C30B15/02 , C30B15/20 , C30B15/22 , H01L21/208 , B01D9/00
CPC分类号： C30B15/02 , C30B15/20
摘要： A method and an apparatus are proposed for pulling crystals from the melt. The recharging of the melt (4) is performed such that the crucible (3) is raised and lowered with respect to the crystal pulling system while keeping the position of the melt surface (25) constant with respect to the crystal pulling system. In particular it is proposed that, during a first time interval (34) the amount of recharge (37) per unit time be greater than the average amount of recharge (38, 39) per unit time that would be necessary in order to make up for the consumption of material by the growing crystal (5), that during a second time interval (45) the amount of recharge (46) per unit time be less than the average recharge amount per unit time that would be necessary in order to make up for the consumption of material by the growing crystal, that during the first time interval the crucible (3) be lowered to keep the melt surface constant with respect to the crystal pulling apparatus, that during the second time interval the crucible (3) be raised to keep the melt surface constant with respect to the crystal pulling apparatus. By the invention, erosion ring grooves on the inside wall of the crucible are prevented and thus the useful life of the crucible is considerably lengthened. The method according to the invention can be practiced on existing apparatus.
摘要翻译：提出了从熔体中提取晶体的方法和装置。进行熔融物（4）的再充电，使得坩埚（3）相对于晶体拉伸系统升高和降低，同时保持熔体表面（25）的位置相对于拉伸系统恒定。特别提出，在第一时间间隔（34）期间，每单位时间的充电量（37）大于每单位时间的平均补充量（38,39），以便组成为了通过生长晶体（5）消耗材料，在第二时间间隔（45）期间，每单位时间的充电量（46）小于每单位时间的平均充电量，这是为了使得通过生长的晶体消耗材料，在第一时间间隔期间，降低坩埚（3）以使熔体表面相对于晶体拉伸装置保持恒定，在第二时间间隔期间，坩埚（3）为升高以使熔体表面相对于拉晶装置保持恒定。通过本发明，可以防止坩埚内壁上的侵蚀环槽，从而使坩埚的使用寿命显着延长。根据本发明的方法可以在现有装置上实施。

86. 发明授权

US5288363A Automatic control method for growing single-crystal neck portions 失效
标题翻译：用于生长单晶颈部的自动控制方法
公开(公告)号：US5288363A
公开(公告)日：1994-02-22
申请号：US834077
申请日：1992-02-12
申请人： Kenji Araki
发明人： Kenji Araki
IPC分类号： C30B15/22 , G05B13/02
CPC分类号： C30B15/22
摘要： The method automatically controls the growing of a single-crystal neck portion by the CZ method. The speed of pulling up the crystal is adjusted so that the crystal diameter control deviation becomes closer to zero. Combinations of the crystal diameter control deviation .DELTA.D being large or small and the pulling-up speed V being high or low are employed as fuzzy inference conditions. According to such conditions, a correction value for the power supplied to a melt heater 18 is calculated, based on the fuzzy inference.
摘要翻译：该方法通过CZ方法自动控制单晶颈部的生长。调节晶体的拉伸速度，使得晶体直径控制偏差变得更接近零。使用晶体直径控制偏差（Delta）D大或小，升高速度V为高或低的组合作为模糊推理条件。根据这些条件，基于模糊推理，计算供给到熔融加热器18的功率的校正值。

87. 发明授权

US5268061A Method and apparatus for producing a manganese-zinc ferrite single crystal using a local liquid pool formation 失效
标题翻译：使用局部液池形成生产锰锌铁氧体单晶的方法和装置
公开(公告)号：US5268061A
公开(公告)日：1993-12-07
申请号：US950214
申请日：1992-09-24
申请人： Kuk H. Sunwoo , Jae Y. Ma , Tae H. Kim
发明人： Kuk H. Sunwoo , Jae Y. Ma , Tae H. Kim
IPC分类号： C30B15/24 , C30B15/00 , C30B15/34 , C30B29/22 , C30B15/22
CPC分类号： C30B15/34 , C30B15/00 , C30B29/24 , Y10T117/1008 , Y10T117/1036 , Y10T117/1068
摘要： A method and apparatus for producing a manganese-zinc ferrite single crystal using a local liquid pool formation which involves melting of a starting material in a crucible and lowering of the temperature of crucible to make the resultant melt maintain form three phase regions of an upper liquid pool region, an intermediate semi-rigid region and a lower solid region. A pair of heaters are disposed at the upper and side wall portions of crucible and controlled differently from each other so that the formed lower solid region extends at its peripheral portion throughout the inner surface of the side wall portion of the crucible, thereby minimizing the contact of the formed upper liquid pool region with the whole inner surface of the crucible. For monitoring respective temperatures of various portions in the crucible to control the heaters, there are provided thermocouples which includes a thermocouple for the crystal drawing port member, a thermocouple for the upper portion of crucible, a thermocouple for the upper portion of the side wall of crucible and a thermocouple for the lower portion of crucible.
摘要翻译：一种使用局部液体池形成生产锰锌铁氧体单晶的方法和装置，其包括在坩埚中熔化原料并降低坩埚的温度以使所得熔体保持形成上部液体的三相区域池区域，中间半刚性区域和下部固体区域。一对加热器设置在坩埚的上壁部分和侧壁部分，并且彼此不同地控制，使得形成的下部固体区域在其周边部分延伸贯穿坩埚的侧壁部分的内表面，从而使接触最小化形成的上部液体池区域与坩埚的整个内表面。为了监测坩埚中各部分的温度以控制加热器，提供了热电偶，其包括用于晶体抽出口部件的热电偶，用于坩埚上部的热电偶，用于上部侧壁的热电偶坩埚和用于坩埚下部的热电偶。

88. 发明授权

US5092956A Device for mechanically stabilizing web ribbon buttons during growth initiation 失效
标题翻译：用于在生长启动期间机械稳定纸带按钮的装置
公开(公告)号：US5092956A
公开(公告)日：1992-03-03
申请号：US311376
申请日：1989-02-10
申请人： Paul K. Henry , Edward P. Fortier
发明人： Paul K. Henry , Edward P. Fortier
IPC分类号： C30B13/30 , C30B15/00 , C30B15/22 , C30B15/34 , C30B29/64
CPC分类号： C30B15/34 , C30B13/30 , C30B15/00 , C30B15/22 , C30B29/60 , Y10T117/1032 , Y10T117/1072
摘要： The invention relates to a stabilization device for stabilizing dendritic web seed buttons during initiation of crystal growth from a float zone melt. The invention includes angular maintenance means for maintaining a constant angular orientation between the axis of a growth initiation seed and the upper surface of a web button during withdrawal of the web button from the melt. In the preferred embodiment, the angular maintenance means includes an adjustable elevation tube which surrounds the seed, the weight of which may be selectively supported by the seed button during web button withdrawal.
摘要翻译：本发明涉及一种稳定装置，用于在从浮区熔体开始晶体生长期间稳定树枝状网状种子按钮。本发明包括角度维持装置，用于在将网状物按钮从熔体中取出期间，保持在生长起始种子的轴线和网状物按钮的上表面之间恒定的角度取向。在优选实施例中，角度维持装置包括一个包围种子的可调节升降管，其重量可以在网状物按钮取出期间由种子按钮选择性地支撑。

89. 发明授权

US4857278A Control system for the czochralski process 失效
标题翻译：切克劳斯基过程的控制系统
公开(公告)号：US4857278A
公开(公告)日：1989-08-15
申请号：US72554
申请日：1987-07-13
申请人： Michael A. Gevelber , George Stephanopoulos
发明人： Michael A. Gevelber , George Stephanopoulos
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , Y10T117/1008
摘要： The control system includes a master loop for controlling crystal interface diameter and slave control loops for controlling the melt and the crystal thermal environment. Diameter and meniscus angle signals are partitioned into both a low frequency and a high frequency signal. The low frequency signal is used to adjust the set point of the melt. The higher frequency signal is used to control the crystal pull rate. The crystal control slave loop regulates crystal heat flux which may include following a heat flux trajectory. The heat flux trajectory may also be used to adjust the melt temperature set point.
摘要翻译：控制系统包括用于控制晶体界面直径的主回路和用于控制熔体和晶体热环境的从控制回路。直径和弯月面角信号被分为低频和高频信号。低频信号用于调节熔体的设定点。较高的频率信号用于控制晶体拉速。晶体控制从回路调节晶体热通量，其可以包括跟随热通量轨迹。热通量轨迹也可用于调节熔体温度设定点。

90. 发明授权

US4849065A Crystal growing method 失效
标题翻译：水晶生长法
公开(公告)号：US4849065A
公开(公告)日：1989-07-18
申请号：US100969
申请日：1987-09-25
申请人： Yasunori Ohkubo , Toshihiko Suzuki , Nobuyuki Izawa
发明人： Yasunori Ohkubo , Toshihiko Suzuki , Nobuyuki Izawa
IPC分类号： C30B15/22 , C30B15/30 , H01L21/18
CPC分类号： C30B15/305 , Y10S117/917
摘要： A crystal growing method for growing a crystal from a raw material melt highly magnetic field is being applied to the raw material melt, the electromagnet for applying the magnetic field being supplied with a direct current having a ripple factor of less than 5% to thereby grow a crystal with good crystallinity properties.
摘要翻译：将原料熔融高磁场生长晶体的晶体生长方法应用于原料熔液，用于施加具有小于5％的纹波系数的直流电磁场的电磁体，从而生长具有良好结晶性的晶体。

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