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81. 发明授权

US4668481A Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process 失效
标题翻译：通过液体封装的切克萨斯基（LEC）工艺制造化合物半导体单晶的装置
公开(公告)号：US4668481A
公开(公告)日：1987-05-26
申请号：US707810
申请日：1985-03-04
申请人： Masayuki Watanabe , Sadao Yashiro
发明人： Masayuki Watanabe , Sadao Yashiro
IPC分类号： C30B15/10 , C30B15/14 , C30B27/02
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1064 , Y10T117/1068
摘要： A compound-semiconductor single-crystal-manufacturing apparatus comprises a crucible for holding a molten raw material of GaAs and a liquid capsule element of B.sub.2 O.sub.3, a crucible holder, a heat element concentrically surrounding the crucible, and a heat-shielding unit surrounding the heat element, for use in manufacturing a GaAs single crystal by progressively pulling it up from the raw molten material held in the crucible by the liquid encapsulated Czochralski (LEC) process. The heat-shielding unit and crucible holder are formed by molding a sintered aluminum nitride (AlN) element.
摘要翻译：化合物半导体单晶制造装置包括用于保持GaAs的熔融原料的坩埚和B 2 O 3的液体胶囊元件，坩埚保持器，同心地围绕坩埚的热元件和围绕热量的热屏蔽单元元素，用于通过液体封装的Czochralski（LEC）方法从保持在坩埚中的原始熔融材料逐渐拉出来制造GaAs单晶。热屏蔽单元和坩埚保持器通过模制烧结的氮化铝（AlN）元件而形成。

82. 发明授权

US4652332A Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals 失效
标题翻译：铜铟二硒化物（CuInSe 2）晶体的合成和生长方法
公开(公告)号：US4652332A
公开(公告)日：1987-03-24
申请号：US676343
申请日：1984-11-29
申请人： Theodore F. Ciszek
发明人： Theodore F. Ciszek
IPC分类号： C30B15/00 , C30B15/10 , C30B27/02
CPC分类号： C30B27/02 , C30B15/00 , C30B15/10 , C30B29/46 , Y10S117/90
摘要： A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.
摘要翻译：制备CuInSe 2晶体的方法包括在惰性气体的高压气氛中在坩埚中将化学计量量的Cu，In和Se熔化足量的B2O3，以封装CuInSe 2熔体并将Se限制在坩埚中。优于化学计量量的1.8至2.2％范围内的附加Se，以弥补该过程中少量的Se损失。通过将晶种通过B 2 O 3封装物插入与CuInSe 2熔体接触并向上提取种子以使晶体在熔融物上生长，使晶体生长。

83. 发明授权

US4624735A Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members 失效
标题翻译：半导体元件制造装置的构成部件和用于制造所述构成部件的反应炉
公开(公告)号：US4624735A
公开(公告)日：1986-11-25
申请号：US701641
申请日：1985-02-11
申请人： Masao Koyama , Syuitu Matuo , Chiaki Nakayama , Katsumi Hoshina
发明人： Masao Koyama , Syuitu Matuo , Chiaki Nakayama , Katsumi Hoshina
IPC分类号： C04B35/52 , C04B41/50 , C04B41/87 , C30B15/10 , C30B25/08 , C30B25/12 , C30B35/00 , H01L21/205 , H01L21/22
CPC分类号： C04B41/009 , C04B35/52 , C04B41/5059 , C04B41/87 , C30B15/10 , C30B25/08 , C30B25/12 , C30B35/00 , H01L21/02376 , H01L21/02529 , H01L21/0262 , Y10S117/90 , Y10S438/931 , Y10T117/1024 , Y10T428/26 , Y10T428/263
摘要： The constituent members of a semiconductor element-manufacturing apparatus which are formed by depositing a silicon carbide layer on a carbon substrate, and wherein a peak X-ray diffraction on the (200) plane of the silicon carbide layer has a half value width of 0.35.degree. or less as measured by the C.sub.u --K.sub..alpha. ray used in the X-ray diffraction analysis.
摘要翻译：通过在碳衬底上沉积碳化硅层而形成的半导体元件制造装置的构成部件，其中碳化硅层的（200）面上的峰值X射线衍射的半值宽度为0.35 DEG或以下，通过X射线衍射分析中使用的Cu-Kα射线测量。

84. 发明授权

US4572763A Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof 失效
标题翻译：从其熔体中进行ZnSe晶体的外延生长的方法和装置
公开(公告)号：US4572763A
公开(公告)日：1986-02-25
申请号：US513294
申请日：1983-07-13
申请人： Jun-ichi Nishizawa
发明人： Jun-ichi Nishizawa
IPC分类号： C30B19/04 , C30B29/48 , H01L21/208 , H01L21/368 , C30B9/06
CPC分类号： C30B19/04 , C30B29/48 , Y10S117/90 , Y10S117/906
摘要： In conducting a liquid phase epitaxial growth of a Zn crystal on a substrate wherein a batch of Se melt serving as a solvent is used and relying on a vapor pressure controlling technique and a temperature difference method, a Zn vapor pressure controlling region is disposed, via the Se melt, in a direction vertical to the surface of the substrate which is contained in the growth region, and a ZnSe source crystal is disposed in such a way that it is supplied into the Se melt in a lateral direction of this melt. Whereby, a ZnSe single crystal having a good crystal perfection, and a good linearity of the thickness of the grown crystal relative to time can be obtained.
摘要翻译：在使用一批作为溶剂的Se熔体作为溶剂的基底上进行Zn晶体的液相外延生长，并依靠蒸气压控制技术和温差法，通过 Se沿垂直于包含在生长区域中的衬底的表面的方向熔化，并且ZnSe源晶体以这样的方式设置，使得它在该熔体的横向上被供应到Se熔体中。由此，可以获得具有良好晶体完整性和生长晶体相对于时间的厚度线性良好的ZnSe单晶。

85. 发明授权

US4515755A Apparatus for producing a silicon single crystal from a silicon melt 失效
标题翻译：从硅熔体制造硅单晶的装置
公开(公告)号：US4515755A
公开(公告)日：1985-05-07
申请号：US368440
申请日：1982-04-14
申请人： Shuitsu Matsuo , Yasuhiro Imanishi , Hideo Nagashima , Masaharu Watanabe , Toshiro Usami , Hisashi Muraoka
发明人： Shuitsu Matsuo , Yasuhiro Imanishi , Hideo Nagashima , Masaharu Watanabe , Toshiro Usami , Hisashi Muraoka
IPC分类号： C04B35/584 , C30B15/10 , C30B15/24 , C30B15/34
CPC分类号： C04B35/584 , C30B15/10 , C30B15/24 , Y10S117/90 , Y10T117/1032
摘要： An apparatus for producing silicon single crystal from melted silicon by the pull-up process using a seed crystal, wherein at least a portion of a device in contact with the melted silicon includes a layer of silicon nitride precipitated from gaseous phase and comprising 20% or above of .beta. phase, or comprising 80% or above of .alpha. phase whose crystal grains have grain diameters of 5 .mu.m or above at a ratio of 10% or more.
摘要翻译：一种通过使用晶种的上拉工艺从熔融硅生产硅单晶的装置，其中与熔融硅接触的装置的至少一部分包括从气相沉淀的氮化硅层，并且包含20％或 β相以上，或者包含80％以上的α晶相，其晶粒的晶粒直径为5μm以上，比例为10％以上。

86. 发明授权

US4474641A Method of drawing a silicon rod 失效
标题翻译：拉拔硅棒的方法
公开(公告)号：US4474641A
公开(公告)日：1984-10-02
申请号：US362582
申请日：1982-03-29
申请人： Adrianus M. J. G. vanRun
发明人： Adrianus M. J. G. vanRun
IPC分类号： C30B15/00 , C30B15/10 , C30B15/20 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/10 , C30B15/20 , Y10S117/90
摘要： The invention relates to a method of drawing a monocrystalline silicon rod from a silicon melt contained in a quartz crucible. In the method according to the invention, the quartz crucible has an internal cross-section which decreases gradually downwards. This technique obtains silicon rods with an oxygen content which is constant throughout their length. Upon further processing the oxygen forms oxygen precipitates which are removed by gettering.
摘要翻译：本发明涉及从包含在石英坩埚中的硅熔体中提取单晶硅棒的方法。在根据本发明的方法中，石英坩埚具有逐渐向下减小的内部横截面。该技术获得具有在其整个长度上恒定的氧含量的硅棒。在进一步处理时，氧气形成通过吸气除去的氧沉淀物。

87. 发明授权

US4408658A Apparatus and method for heating a material in a transparent ampoule 失效
标题翻译：用于加热透明安瓿中的材料的装置和方法
公开(公告)号：US4408658A
公开(公告)日：1983-10-11
申请号：US280151
申请日：1981-06-30
申请人： Lawrence R. Holland
发明人： Lawrence R. Holland
IPC分类号： C30B11/00 , C30B13/14 , H05B1/00 , C30B1/00 , C30B35/00 , F27D11/00
CPC分类号： C30B11/002 , C30B13/14 , Y10S117/90 , Y10T117/10 , Y10T117/1092
摘要： An improved process for heating a material (20) within a fused silica ampoule by radiation through the wall of the ampoule (16), while simultaneously passing a cooling gas (22) around the ampoule, the radiation having passed through a screen (18) of fused silica so as to remove those components capable of directly heating the silica, thereby increasing the temperature of the material within the ampoule above the strain point of the ampoule, while maintaining the exterior of the ampoule cool enough to prevent rupturing the amp
摘要翻译：一种通过辐射通过安瓿（16）的壁面加热熔融二氧化硅安瓿内的材料（20）的改进方法，同时使安瓿周围的冷却气体（22）通过，所述辐射已经通过筛网（18）

88. 发明授权

US4400232A Control of oxygen- and carbon-related crystal defects in silicon processing 失效
标题翻译：硅处理中氧和碳相关晶体缺陷的控制
公开(公告)号：US4400232A
公开(公告)日：1983-08-23
申请号：US319638
申请日：1981-11-09
申请人： Paul D. Ownby , Paul E. Grayson
发明人： Paul D. Ownby , Paul E. Grayson
IPC分类号： C30B15/04 , C30B33/00
CPC分类号： C30B29/06 , C30B15/04 , C30B33/00 , Y10S117/90 , Y10S117/916
摘要： In the production of silicon articles at an elevated temperature, a stream comprising a controlled mixture of an oxygen-containing first gas and a second gas is admitted to the processing chamber. The first gas is one which partially dissociates under the conditions in the chamber to form both oxygen and the second gas. The second gas is one which is not harmful to silicon at the conditions in the chamber. Substantially equilibrium conditions are established in the chamber so that the dissociation of the first gas to oxygen occurs reversibly. The partial pressure of oxygen (P.sub.O.sbsb.2) is sensed in the chamber during processing of the article. In response to the P.sub.O.sbsb.2 level, the ratio of the rates of flow of the oxygen-containing gas and the second gas is adjusted so as to maintain the P.sub.O.sbsb.2 at a level less than about 10.sup.-6 atmosphere, and usually no greater than about 10.sup.-10 atmosphere, at which the density of oxygen-related defects in the processed silicon article is acceptably low. Oxygen-related defects in the silicon are thereby reduced. If graphite structures are present in the hot zone of the processing chamber, they are preferably coated with an impervious coating which will stand the high temperature and will prevent the gas stream from coming into contact with the hot graphite. Carbon-related defects in the silicon are thereby also reduced.
摘要翻译：在高温下制造硅制品时，包含含氧第一气体和第二气体的受控混合物的物流进入处理室。第一气体是在室内的条件下部分解离以形成氧气和第二气体的气体。第二种气体是在室内条件下对硅无害的气体。在室中建立了基本上平衡的条件，使得第一气体与氧的解离可逆地发生。在制品的处理过程中，室内感测氧气分压（PO2）。响应于PO2水平，调节含氧气体和第二气体的流速比，以将PO 2保持在低于约10-6气氛的水平，通常不大于约10 -10气氛中，加工硅制品中氧相关缺陷的密度可接受地低。因此，与硅中的氧相关的缺陷减少。如果石墨结构存在于处理室的热区中，则它们优选地涂覆有将保持高温并且将防止气流与热石墨接触的不透水涂层。因此，硅中的碳相关缺陷也降低。

89. 发明授权

US4330362A Device and process for pulling high-purity semiconductor rods from a melt 失效
标题翻译：从熔体中拉出高纯度半导体棒的装置和工艺
公开(公告)号：US4330362A
公开(公告)日：1982-05-18
申请号：US240537
申请日：1981-03-04
申请人： Werner Zulehner
发明人： Werner Zulehner
IPC分类号： C30B15/00 , C30B15/02 , C30B15/14 , H01L21/208 , C30B15/22
CPC分类号： C30B15/02 , C30B15/14 , Y10S117/90 , Y10T117/1056 , Y10T117/106
摘要： In the crucible pulling of silicon according to the Czochralski technique,ilicon monoxide forms as a result of the silicon melt reacting with the quartz crucible containing the melt, and evaporates and deposits in the form of solid particles on the upper edge of the crucible, on the monocrystalline rod, on the walls of the vessel, and also on recharging devices in the upper pulling chamber. These solid particles can fall back into the melt and then cause dislocations and polycrystalline growth in the growing silicon rod. As a result of the reaction of the carbon of the hot graphite parts with silicon monoxide, carbon monoxide is also formed and this partially diffuses into the melt and gives rise to carbon impurities in the silicon rod. In addition, because of heat irradiation from the inner wall of the quartz crucible as it becomes more empty, high pulling speeds, such as those usual in crucible-free zone pulling, cannot be obtained. These disadvantages of the conventional crucible-pulling process are effectively obviated according to the invention by a pot-like device which entails a partial covering of the melt surface, the crucible and the space laterally adjoining the crucible.
摘要翻译：在根据切克劳斯基（Czochralski）技术的坩埚拉硅中，由于硅熔体与含有熔体的石英坩埚反应而形成一氧化硅，并在坩埚的上边缘上以固体颗粒的形式蒸发并沉积在坩埚的上边缘上容器的壁上的单晶棒，以及上拉室中的再充电装置。这些固体颗粒可以回落到熔体中，然后在生长的硅棒中引起位错和多晶生长。由于热石墨部分的碳与一氧化硅反应的结果，也形成一氧化碳，并且这部分地扩散到熔体中并在硅棒中产生碳杂质。此外，由于当石英坩埚变得更空时由于来自石英坩埚的内壁的热照射，不能获得诸如通常在无坩埚区域拉伸中的高牵引速度。根据本发明，通过盆形装置有效地避免了常规坩埚拉拔过程的这些缺点，该盆形装置需要部分地覆盖熔体表面，坩埚和横向邻接坩埚的空间。

90. 发明授权

US4325777A Method and apparatus for reforming an improved strip of material from a starter strip of material 失效
标题翻译：用于从起始材料条切割改进的材料条的方法和装置
公开(公告)号：US4325777A
公开(公告)日：1982-04-20
申请号：US178063
申请日：1980-08-14
申请人： John C. Yarwood , Derek E. Tyler , Joseph Winter
发明人： John C. Yarwood , Derek E. Tyler , Joseph Winter
IPC分类号： C30B13/20 , C30B13/18
CPC分类号： C30B13/20 , Y10S117/90 , Y10S117/901 , Y10S117/917 , Y10T117/1084 , Y10T117/1088
摘要： A process and apparatus for reforming an improved strip (12) of material from a starting strip (16) of material. An electromagnetic device (18) maintains a floating molten zone (20) of the material in the starting strip (16) of the material and also forms the floating zone into the improved strip (12). The apparatus is provided with a susceptor device (80) arranged adjacent to the starting strip and operatively associated with the electromagnetic device (18) for initially heating the starting strip to be sufficiently conductive so that the starting strip can be directly heated by the electromagnetic device. Further, a control device (67) provides relative movement between the susceptor device (80) and the electromagnetic device by positioning the susceptor device in and out of the field of the electromagnetic device.
摘要翻译：一种用于从材料的起始条（16）重整改进的材料条（12）的工艺和装置。电磁装置（18）将材料的浮动熔融区（20）保持在材料的起始条（16）中，并且还将浮动区形成改进的条（12）。设备设置有邻近起始带设置并与电磁装置（18）可操作地相关联的基座装置（80），用于初始加热起始带以使其具有足够的导电性，使起动带可以被电磁装置。此外，控制装置（67）通过将基座装置定位在电磁装置的外部和外部来提供感受器装置（80）和电磁装置之间的相对移动。

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