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81. 发明授权

US06419742B1 method of forming lattice matched layer over a surface of a silicon substrate 失效
标题翻译：在硅衬底的表面上形成晶格匹配层的方法
公开(公告)号：US06419742B1
公开(公告)日：2002-07-16
申请号：US08340097
申请日：1994-11-15
申请人： Wiley P. Kirk , Joe X. Zhou , Bruce E. Gnade , Chih-Chen Cho
发明人： Wiley P. Kirk , Joe X. Zhou , Bruce E. Gnade , Chih-Chen Cho
IPC分类号： C30B2514
CPC分类号： C30B23/02 , C30B29/48
摘要： A method of forming lattice matched single crystal wide bandgap II-VI compound semiconductor films over a silicon substrate includes first cleaning (10) the silicon substrate. A passivation layer is formed (18), which may comprise arsenic, germanium, or CaF2, among others. The lattice matched layer is then grown (26) on the passivation layer.
摘要翻译：在硅衬底上形成晶格匹配的单晶宽带隙II-VI化合物半导体膜的方法包括：首先清洗（10）硅衬底。形成钝化层（18），其可以包括砷，锗或CaF 2等。然后将晶格匹配层在钝化层上生长（26）。

82. 发明申请

US20010054375A1 METHOD OF SUPPRESSING CONVECTION IN A FLUID IN A CYLINDRICAL VESSEL 失效
标题翻译：抑制圆柱形流体中流体对流的方法
公开(公告)号：US20010054375A1
公开(公告)日：2001-12-27
申请号：US08893223
申请日：1997-07-15
发明人： SHINSUKE FUJIWARA
IPC分类号： C30B001/00
CPC分类号： C30B30/08 , C30B25/00 , C30B25/08 , C30B25/14 , C30B29/48
摘要： An object of the present invention is to provide a method of suppressing convection of a fluid in a cylindrical vessel by means of realizing an environment under micro gravity which can be maintained for such a long time that growth of a large-sized crystal be economically effected. The feature of the present invention consists in a method of suppressing occurrence of natural convection of a fluid in a cylindrical vessel, when a density gradient due to difference in temperature, concentration or partial pressure is added to the gas or liquid filled in the cylindrical vessel along the central axis of the vessel, characterized by maintaining horizontal the vessel and rotating it around the central axis.
摘要翻译：本发明的目的是提供一种通过实现微重力下的环境来抑制圆柱形容器中的流体的对流的方法，该方法可以保持这样长的时间，从而经济地实现大尺寸晶体的生长。本发明的特征在于，当将由于温度，浓度或分压差导致的密度梯度加到装在圆柱形容器中的气体或液体时，抑制圆柱形容器中的流体自然对流的发生的方法沿着容器的中心轴线，其特征在于保持容器的水平并围绕中心轴线旋转。

83. 发明申请

US20010035530A1 Vapor phase deposition system 失效
标题翻译：气相沉积系统
公开(公告)号：US20010035530A1
公开(公告)日：2001-11-01
申请号：US09842045
申请日：2001-04-26
发明人： Takashi Udagawa
IPC分类号： H01L027/15
CPC分类号： C23C16/45561 , C23C16/455 , C30B25/02 , C30B25/14 , C30B29/48 , H01L21/02395 , H01L21/02463 , H01L21/02543 , H01L21/0262 , H01L33/007
摘要： An object of the present invention is to reduce variance in the flow rates of source gasses and inconsistency in the mixing ratio of the source gasses when the flow paths of the source gasses are switched in a vent/run-type piping system of a vapor deposition apparatus. In a vapor deposition apparatus, a run line for mixing one or more sources with a carrier gas and for supplying the resultant gas to a vapor deposition region; a vent line for allowing the sources to detour away from the vapor deposition region and exhausting the sources; and a mechanism for switching the paths of the sources from the vapor deposition region to the vent line are provided. The paths of the sources are switched from the vent line to the vapor deposition region when the mixing ratio of the sources becomes consistent in the run line.
摘要翻译：本发明的一个目的是减少源气体流量的变化，并且当源气体的流动路径在气相沉积的排气/流动式管道系统中切换时，源气体的混合比例不一致仪器。在气相沉积装置中，用于将一个或多个源与载气混合并将所得气体供应到气相沉积区的流水线; 用于允许源绕过气相沉积区域并排出源的排气管线; 并且提供了用于将来自气相沉积区域的源路径切换到排气管线的机构。当源的混合比在运行中变得一致时，源的路径从排气管线切换到气相沉积区域。

84. 发明授权

US06287381B1 Crystal growth process for large area GaAs with controllable resistivity and infrared window/dome with EMI-EMP protection formed therefrom 失效
标题翻译：具有可控电阻率的大面积GaAs晶体生长工艺和由其形成EMI-EMP保护的红外窗/圆顶
公开(公告)号：US06287381B1
公开(公告)日：2001-09-11
申请号：US08473419
申请日：1995-06-07
申请人： Paul Klocek
发明人： Paul Klocek
IPC分类号： C30B1102
CPC分类号： C30B11/00 , C30B29/40 , C30B29/42 , C30B29/44 , C30B29/48 , C30B29/64 , G02B1/02 , G02B5/207 , G02B5/208 , Y10S117/90 , Y10S148/06
摘要： An optical dome or window formed of a composition which is transmissive to infrared frequencies in the range of from about 1 micron to about 14 microns and which is relatively opaque to substantially all frequencies above about 14 microns consisting essentially of a compound taken from the class consisting of group III-V compounds doped with an element taken from the class consisting of shallow donors and having less than about 1×107 atoms/cc impurities and having less than about 1×1015 parts carbon. The shallow donors are Se, Te and S, preferably Se, with the Se concentration from 5×1015 atoms/cc to 2×106 atoms/cc. The group III-V compound is preferably GaAs or GaP. The group III-V compound is fabricated by providing a graphite vessel containing a graphite cloth with the molten group III element thereover, a shallow donor and water containing boron oxide thereover, loading the group V element into the vessel in essentially stoichiometric amounts to provide the molten compound of the group III and group V elements and cooling the molten compound progressively in a vertical direction from bottom to top to form a crystal by causing growth of the crystal from the bottom up in a vertical direction. The crystal with B2O3 thereon is then placed in a vacuum to reboil the B2O3 and cause it to foam. The B2O3 is then easily removed from the crystal.
摘要翻译：由组合物形成的光学圆顶或窗口，该组合物透射红外频率范围为约1微米至约14微米，并且对于大约14微米以上的基本上所有频率是相对不透明的，其基本上由以下类别组成：掺杂元素的III-V族化合物，该元素取自浅供体并且具有小于约1×10 7原子/ cc杂质且具有小于约1×10 15个碳的类别。浅供体是Se，Te和S，优选Se，Se浓度为5×10 15原子/ cc至2×10 6原子/ cc。 III-V族化合物优选为GaAs或GaP。通过在其上提供含有熔融III族元素的石墨布，具有浅供体和含氧化硼的水的石墨容器，以基本上化学计量的量将V族元素加载到容器中来制备III-V族化合物，以提供 III族和V族元素的熔融化合物，并且从垂直方向上下垂直方向从底部到顶部沿垂直方向逐渐冷却熔融化合物，从而形成晶体。然后将其上具有B 2 O 3的晶体置于真空中以再沸腾B 2 O 3并使其发泡。然后可以容易地从晶体中除去B2O3。

85. 发明授权

US06218212B1 Apparatus for growing mixed compound semiconductor and growth method using the same 失效
标题翻译：用于生长混合化合物半导体的装置及使用其的生长方法
公开(公告)号：US06218212B1
公开(公告)日：2001-04-17
申请号：US08198641
申请日：1994-02-18
申请人： Tetsuo Saito , Hironori Nishino , Satoshi Murakami , Yoichiro Sakachi
发明人： Tetsuo Saito , Hironori Nishino , Satoshi Murakami , Yoichiro Sakachi
IPC分类号： H01L2100
CPC分类号： C23C16/45504 , C23C16/306 , C23C16/4482 , C23C16/455 , C23C16/45561 , C23C16/45591 , C30B25/02 , C30B25/10 , C30B25/14 , C30B29/48
摘要： An apparatus for growing a mixed compound semiconductor layer utilizing three or more source gases. The apparatus includes a horizontal type reactor chamber. The reactor chamber includes a partition plate separating an upstream region of the reactor chamber into an upper region and a lower region. The upper and lower regions are joined together forming a growth region in a downstream region of the reactor chamber. First and second inlet ports are provided at an upstream end of the lower region for admitting first and second source gases, respectively. A third inlet port is provided at an upstream end of the upper region for admitting a third source gas. An outlet port is provided at a downstream end of the growth region for exhaust. A substrate stage is arranged in the growth region so that the substrate surface is exposed to the growth region and forms a smooth surface for allowing a laminar gas flow.
摘要翻译：一种利用三种或更多种源气生长混合化合物半导体层的装置。该装置包括一个卧式反应室。反应室包括将反应器室的上游区分成上部区域和下部区域的分隔板。上部和下部区域连接在一起，形成在反应室的下游区域中的生长区域。第一和第二入口端口设置在下部区域的上游端，用于分别允许第一和第二源气体。第三入口端口设置在上部区域的上游端，用于允许第三源气体。出口端口设置在用于排气的生长区域的下游端。衬底台布置在生长区域中，使得衬底表面暴露于生长区域并形成用于允许层流气流的光滑表面。

86. 发明授权

US6139631A Crystal growth method and apparatus 失效
标题翻译：晶体生长方法和装置
公开(公告)号：US6139631A
公开(公告)日：2000-10-31
申请号：US133084
申请日：1998-08-12
申请人： Hiroyuki Kato
发明人： Hiroyuki Kato
IPC分类号： C30B23/02 , C30B23/00 , C30B29/48 , H01L21/203 , H01L21/363 , C30B25/00 , C30B35/00
CPC分类号： C30B23/00 , C30B29/48 , Y10S148/064 , Y10T117/10
摘要： A crystal growth method having the steps of: preparing a growth container having a vapor generating chamber VC provided with a source material 14, a growth chamber GC provided with a seed crystal 12, and a coupling portion 18 having a cross sectional area narrower than a cross sectional area of each of the vapor generating chamber and the growth chamber, the coupling portion coupling the vapor generating chamber and the growth chamber; and vapor-phase growing a single crystal on the seed crystal by forming a temperature gradient in the growth container and by maintaining the seed crystal in the growth chamber at a growth temperature and the source material in the vapor generating chamber at a vapor supply temperature higher than the growth temperature. A crystal having a diameter larger than that of a seed crystal can be formed easily.
摘要翻译：一种晶体生长方法，其具有以下步骤：制备具有设置有源材料14的蒸气发生室VC的生长容器，设置有晶种12的生长室GC，以及具有窄于每个蒸汽发生室和生长室的横截面面积，耦合部分耦合蒸气发生室和生长室; 并通过在生长容器中形成温度梯度并在生长室中保持晶种在生长温度下将晶体气相生长在晶种上，蒸气发生室中的源材料在蒸气供应温度较高比生长温度高。可以容易地形成直径大于晶种直径的晶体。

87. 发明授权

US6113691A Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) method of producing II-IV semiconductor compounds and II-VI semiconductor compounds thus produced 失效
标题翻译：生产II-IV半导体化合物和II-VI半导体化合物的超低压金属 - 有机气相外延（MOVPE）方法
公开(公告)号：US6113691A
公开(公告)日：2000-09-05
申请号：US451341
申请日：1995-05-26
申请人： Nikhil R. Taskar , Donald R. Dorman , Dennis Gallagher
发明人： Nikhil R. Taskar , Donald R. Dorman , Dennis Gallagher
IPC分类号： C30B29/48 , C30B25/02 , C30B25/16 , H01L21/365 , H01L33/00 , H01S5/327
CPC分类号： H01L33/0087 , C30B25/02 , C30B29/48 , H01S2304/04 , H01S5/327
摘要： Semiconductor compounds and a method for producing the same are provided wherein a method for growing at least one epitaxial layer of a II-VI semiconductor compound using MOVPE is used, the method including the steps of subjecting a substrate to organometallic and hydride precursor compounds in a MOVPE reactor at ultra low pressure, i.e. a pressure in the range of about 10 to 1 mTorr, whereby the organometallic and hydride precursor compounds react at a substrate surface without substantial reaction in the gas phase. The epitaxial layers and semiconductor compounds are useful in blue laser devices.
摘要翻译：提供半导体化合物及其制造方法，其中使用使用MOVPE生长II-VI半导体化合物的至少一个外延层的方法，所述方法包括以下步骤：将基底经受有机金属和氢化物前体化合物 MOVPE反应器在超低压下，即在约10至1mTorr范围内的压力，由此有机金属和氢化物前体化合物在基体表面反应而在气相中没有实质的反应。外延层和半导体化合物可用于蓝色激光器件。

88. 发明授权

US6036770A Method of fabricating a laterally continuously graded mercury cadmium telluride layer 失效
标题翻译：制造横向连续分级的碲化镉层的方法
公开(公告)号：US6036770A
公开(公告)日：2000-03-14
申请号：US831813
申请日：1997-04-02
申请人： Dipankar Chandra , Donald F. Weirauch , Thomas C. Penn
发明人： Dipankar Chandra , Donald F. Weirauch , Thomas C. Penn
IPC分类号： C30B19/02 , C30B19/04 , C30B33/02
CPC分类号： C30B19/02 , C30B19/04 , C30B29/48
摘要： Methods are described for the depositing of a plurality of films, preferably mercury cadmium telluride (HgCdTe), whose compositions vary in a controlled manner to provide unique infrared spectral absorption and detection properties. HgCdTe films 64 and 70 are deposited on opposite sides of electrically insulating, IR transmissive film 42. Initially these HgCdTe films may be of uniform composition laterally from 62 to 66 and 68 to 72. However the interdiffusion and segregation coefficients of Hg and Cd are different and vary differently with respect to temperature. By placing film 70 in contact with heater 9, a controlled lateral gradient in composition of the film may be effected because 44 is hotter than 45 and will produce higher Cd concentration at 68 than 72. Similarly 62 will be higher in Cd than 66, however, the gradient will be much less because 64 is cooler than 70. Through the use of a heater 60, the lateral compositional gradient of 64 may be varied with respect to film 70. The close tracking of the IR properties of 70 and 64 can provide useful and novel integrated IR devices such as multiple band spectrometers.
摘要翻译：描述了沉积多个膜，优选汞碲化镉（HgCdTe）的方法，其组成以受控的方式变化以提供独特的红外光谱吸收和检测特性。 HgCdTe膜64和70沉积在电绝缘的IR透射膜42的相对侧上。最初，这些HgCdTe膜在62至66和68至72之间可以具有均匀的组成。然而Hg和Cd的相互扩散和偏析系数不同并且相对于温度变化不同。通过将膜70放置成与加热器9接触，可以实现膜的组成控制的横向梯度，因为44比45高，并且将在68比72产生更高的Cd浓度。类似地，62在Cd中将高于66，但是，因为64比70更冷，所以梯度将会更小。通过使用加热器60，64的侧向组成梯度可以相对于膜70而变化。70和64的IR特性的紧密跟踪可以提供有用和新颖的集成IR设备，如多频带光谱仪。

89. 发明授权

US5882805A Chemical vapor deposition of II/VI semiconductor material using triisopropylindium as a dopant 失效
标题翻译：使用三异丙基铵作为掺杂剂的II / VI半导体材料的化学气相沉积
公开(公告)号：US5882805A
公开(公告)日：1999-03-16
申请号：US245775
申请日：1994-05-18
申请人： Kelvin T. Higa , Robert W. Gedridge, Jr. , Ralph Korenstein , Stuart JC. Irvine
发明人： Kelvin T. Higa , Robert W. Gedridge, Jr. , Ralph Korenstein , Stuart JC. Irvine
IPC分类号： C23C16/30 , C30B25/02 , B32B9/00 , C23C16/00
CPC分类号： C23C16/306 , C30B25/02 , C30B29/48 , Y10S148/064
摘要： Triisopropylindium ((CH.sub.3).sub.2 CH).sub.3 In is used as an n-type dopant for II/VI semiconductor materials. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations in the range of the low 10.sup.15 cm.sup.-3 and does not exhibit an appreciable memory effect.
摘要翻译：三异丙基（（CH 3）2 CH）3 In用作II / VI半导体材料的n型掺杂剂。该掺杂剂前体特别适用于在低1015cm-3范围内的低载流子浓度的II / V半导体材料的铟掺杂，并且不表现出明显的记忆效应。

90. 发明授权

US5711803A Preparation of a semiconductor thin film 失效
标题翻译：半导体薄膜的制备
公开(公告)号：US5711803A
公开(公告)日：1998-01-27
申请号：US536348
申请日：1995-09-29
申请人： Martin Pehnt , Douglas L. Schulz , Calvin J. Curtis , David S. Ginley
发明人： Martin Pehnt , Douglas L. Schulz , Calvin J. Curtis , David S. Ginley
IPC分类号： C01B17/20 , C01B19/00 , C03C17/22 , C30B5/00 , H01L21/208 , H01L21/363 , H01L21/368 , C03B1/02
CPC分类号： B82Y30/00 , C01B17/20 , C01B19/007 , C03C17/22 , C30B29/46 , C30B29/48 , C30B5/00 , H01L21/02422 , H01L21/02562 , H01L21/02601 , H01L21/02628 , C01P2002/01 , C01P2002/02 , C01P2004/64 , C01P2006/22 , C03C2217/287 , C03C2218/113
摘要： A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.
摘要翻译：一种制备半导体膜的方法。该方法包括将半导体材料的纳米颗粒沉积到其上的纳米颗粒沉积期间的表面温度足以使纳米颗粒基本上同时融合从而使其彼此聚结并实现膜生长的基底上。

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