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1. 发明授权

US5547897A Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine 失效
标题翻译：使用胺进行外延生长期间II-VI半导体化合物的光辅助氮掺杂
公开(公告)号：US5547897A
公开(公告)日：1996-08-20
申请号：US259944
申请日：1994-06-15
申请人： Nikhil R. Taskar , Dennis Gallagher , Donald R. Dorman
发明人： Nikhil R. Taskar , Dennis Gallagher , Donald R. Dorman
IPC分类号： C30B29/48 , C23C16/18 , C30B25/02 , C30B25/10 , H01L21/205 , H01L21/365 , H01L21/22
CPC分类号： C30B25/02 , C30B25/105 , C30B29/48 , H01L21/02395 , H01L21/0256 , H01L21/02579 , H01L21/0262 , Y10S148/064
摘要： The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is within the range of 200-250 nm.
摘要翻译：通过使用叔丁胺作为掺杂剂载体，II-VI半导体化合物的生长外延层中的N受体的浓度增强，并且通过使用光辅助生长进一步增强，其使用波长为在200-250nm的范围内。

2. 发明授权

US6113691A Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) method of producing II-IV semiconductor compounds and II-VI semiconductor compounds thus produced 失效
标题翻译：生产II-IV半导体化合物和II-VI半导体化合物的超低压金属 - 有机气相外延（MOVPE）方法
公开(公告)号：US6113691A
公开(公告)日：2000-09-05
申请号：US451341
申请日：1995-05-26
申请人： Nikhil R. Taskar , Donald R. Dorman , Dennis Gallagher
发明人： Nikhil R. Taskar , Donald R. Dorman , Dennis Gallagher
IPC分类号： C30B29/48 , C30B25/02 , C30B25/16 , H01L21/365 , H01L33/00 , H01S5/327
CPC分类号： H01L33/0087 , C30B25/02 , C30B29/48 , H01S2304/04 , H01S5/327
摘要： Semiconductor compounds and a method for producing the same are provided wherein a method for growing at least one epitaxial layer of a II-VI semiconductor compound using MOVPE is used, the method including the steps of subjecting a substrate to organometallic and hydride precursor compounds in a MOVPE reactor at ultra low pressure, i.e. a pressure in the range of about 10 to 1 mTorr, whereby the organometallic and hydride precursor compounds react at a substrate surface without substantial reaction in the gas phase. The epitaxial layers and semiconductor compounds are useful in blue laser devices.
摘要翻译：提供半导体化合物及其制造方法，其中使用使用MOVPE生长II-VI半导体化合物的至少一个外延层的方法，所述方法包括以下步骤：将基底经受有机金属和氢化物前体化合物 MOVPE反应器在超低压下，即在约10至1mTorr范围内的压力，由此有机金属和氢化物前体化合物在基体表面反应而在气相中没有实质的反应。外延层和半导体化合物可用于蓝色激光器件。

3. 发明授权

US5786233A Photo-assisted annealing process for activation of acceptors in semiconductor compound layers 失效
标题翻译：用于激活半导体化合物层中的受体的光辅助退火工艺
公开(公告)号：US5786233A
公开(公告)日：1998-07-28
申请号：US603959
申请日：1996-02-20
申请人： Nikhil R. Taskar , Donald R. Dorman , Dennis Gallagher
发明人： Nikhil R. Taskar , Donald R. Dorman , Dennis Gallagher
IPC分类号： H01L21/205 , H01L21/365 , H01L21/00
CPC分类号： H01L21/02579 , H01L21/0237 , H01L21/02381 , H01L21/0254 , H01L21/02551
摘要： Active acceptor concentrations of p-doped II-VI and III-V semiconductor compound layer provided by chemical vapor deposition are increased by photo-assisted annealing.
摘要翻译：通过光辅助退火，通过化学气相沉积提供的p掺杂的II-VI和III-V半导体化合物层的活性受主浓度增加。

4. 发明授权

US5354708A Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine 失效
标题翻译：使用胺进行外延生长期间II-VI半导体化合物的氮掺杂方法
公开(公告)号：US5354708A
公开(公告)日：1994-10-11
申请号：US091634
申请日：1993-07-14
申请人： Nikhil R. Taskar , Babar A. Khan , Donald R. Dorman
发明人： Nikhil R. Taskar , Babar A. Khan , Donald R. Dorman
IPC分类号： C30B29/48 , C23C16/18 , C30B25/02 , C30B25/10 , H01L21/205 , H01L21/365 , H01L21/20
CPC分类号： H01L21/02395 , C30B25/02 , C30B25/105 , C30B29/48 , H01L21/0256 , H01L21/02579 , H01L21/0262 , Y10S148/041 , Y10S148/064
摘要： The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is at least above the bandgap energy of the compound at the growth temperature.
摘要翻译：通过使用叔丁胺作为掺杂剂载体，II-VI半导体化合物的生长外延层中的N受体的浓度增强，并且通过使用光辅助生长进一步增强，其使用波长为至少高于化合物在生长温度下的带隙能量。

5. 发明授权

US5399524A Method of providing an ohmic type contact on p-type Zn(S)Se 失效
标题翻译：在p型Zn（S）Se上提供欧姆型接触的方法
公开(公告)号：US5399524A
公开(公告)日：1995-03-21
申请号：US133545
申请日：1993-10-07
申请人： Nikhil R. Taskar , Babar A. Khan , Donald R. Dorman
发明人： Nikhil R. Taskar , Babar A. Khan , Donald R. Dorman
IPC分类号： H01L21/28 , H01L21/445 , H01L33/00 , H01L33/28 , H01L33/40 , H01L21/44 , H01L21/48
CPC分类号： H01L33/40 , H01L21/445 , H01L33/28
摘要： A method of providing an improved ohmic contact on an p-type ZnSe or ZnSSe layer provided on a substrate comprising immersing the layer in a Hg bath heated to a temperature in excess of 200.degree. C. for more than two hours.
摘要翻译：在衬底上提供的p型ZnSe或ZnSSe层上提供改进的欧姆接触的方法，包括将该层浸入加热到超过200℃的Hg浴中超过2小时。

6. 发明授权

US5293074A Ohmic contact to p-type ZnSe 失效
标题翻译：欧姆接触到p型ZnSe
公开(公告)号：US5293074A
公开(公告)日：1994-03-08
申请号：US878657
申请日：1992-05-05
申请人： Nikhil R. Taskar , Babar A. Khan , Donald R. Dorman
发明人： Nikhil R. Taskar , Babar A. Khan , Donald R. Dorman
IPC分类号： H01L21/28 , H01L21/445 , H01L33/00 , H01L33/28 , H01L33/40 , H01L23/48 , H01L29/46 , H01L29/62
CPC分类号： H01L33/40 , H01L21/445 , H01L33/28
摘要： A semiconductor structure with a p-type ZnSe layer has an improved ohmic contact consisting of a layer of Hg.sub.x Zn.sub.1-x Te.sub.a Se.sub.b Sc where x=0-1 with x being 0 at the surface of the ZnSe layer and increasing thereafter, a, b and c each =0-1 and a+b+c=1.
摘要翻译：具有p型ZnSe层的半导体结构具有改善的欧姆接触，其由ZnSe层的表面处的x x = 0-1，x为0的Hg x Zn 1-x Te e S Sc Sc层组成，之后增加a，b和c = 0-1，a + b + c = 1。

7. 发明授权

US06534772B1 High resolution high output microchannel based radiation sensor 失效
标题翻译：高分辨率高输出微通道辐射传感器
公开(公告)号：US06534772B1
公开(公告)日：2003-03-18
申请号：US09688662
申请日：2000-10-16
申请人： Vishal Chhabra , Rameshwar Nath Bhargava , Dennis Gallagher , Samuel P. Herko , Bharati S. Kulkarni , Nikhil R. Taskar , Aleksey Yekimov
发明人： Vishal Chhabra , Rameshwar Nath Bhargava , Dennis Gallagher , Samuel P. Herko , Bharati S. Kulkarni , Nikhil R. Taskar , Aleksey Yekimov
IPC分类号： G01T120
CPC分类号： G21K4/00 , G01T1/20 , G01T1/2921 , G21K2004/06 , G21K2004/12 , H01J2231/50036 , H01J2231/5016 , Y10S977/89
摘要： A microchannel phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 40 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The dimensions of the microchannel and the phosphors and the relationship between the microchannels and the phosphors is optimized so that the light output compares favorably with lower resolution non microchannel based scintillation screens. A photomultiplier can be integrated with the X-ray detector so as to provide an enhanced output for use with low level X-ray of for cine or fluoroscopy applications.
摘要翻译：用于将诸如X射线的辐射转换成可见光的微通道荧光屏。屏幕包括可以由玻璃，硅或金属形成的平坦表面，其在其中蚀刻了许多直径为40微米或更小的直径的紧密间隔的微通道。沉积在每个微通道内的是在辐射作用时发光的多种荧光体。微通道和磷光体的尺寸以及微通道和荧光体之间的关系被优化，使得光输出与较低分辨率的非微通道闪烁屏相比较。光电倍增管可与X射线检测器集成，以提供增强的输出，用于电影或荧光透视应用的低电平X射线。

8. 发明授权

US5624293A Gas discharge lamps and lasers fabricated by micromachining methodology 失效
标题翻译：气体放电灯和激光器通过微加工方法制造
公开(公告)号：US5624293A
公开(公告)日：1997-04-29
申请号：US470903
申请日：1995-06-06
申请人： Babar A. Khan , David A. Cammack , Ronald D. Pinker , Nikhil R. Taskar
发明人： Babar A. Khan , David A. Cammack , Ronald D. Pinker , Nikhil R. Taskar
IPC分类号： H01J9/24 , G02F1/13357 , H01J9/00 , H01J9/26 , H01J9/28 , H01J17/49 , H01J61/00 , H01J61/30 , H01J61/36 , H01J61/82 , H01J65/00 , H01J65/04 , H01S3/03 , H01S3/097 , H01S3/0973 , H01S3/032
CPC分类号： G02F1/133617 , H01J17/492 , H01J61/00 , H01J61/30 , H01J61/82 , H01J65/00 , H01J9/00 , H01J9/261 , H01S3/03 , H01S3/097 , H01S3/0973
摘要： A high pressure gas discharge lamp and the method of making same utilizing integrated circuit fabrication techniques. The lamp is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide a cavity forming the gas discharge tube. Electrodes are deposited in the cavity. The cavity is filled with gas discharge materials such as mercury vapor, sodium vapor or metal halide. The substrates are bonded together and channels may be etched in the substrate so as to provide a means for connection to the electrodes. Electrodeless RF activated lamps may also be fabricated by this technique. Micro-lasers may also be fabricated by this technique as well.
摘要翻译：一种高压气体放电灯及其利用集成电路制造技术的方法。该灯由通过集成电路制造技术蚀刻空腔的耐热和耐压平面基板制造，以提供形成气体放电管的空腔。电极沉积在腔中。空腔填充有气体放电材料，例如汞蒸气，钠蒸气或金属卤化物。将基板粘合在一起，并且可以在基板中蚀刻通道，以便提供连接到电极的装置。也可以通过这种技术制造无电极RF激活灯。也可以通过该技术来制造微型激光器。

9. 发明授权

US07259400B1 Nanocomposite photonic structures for solid state lighting 失效
标题翻译：固态照明的纳米复合光子结构
公开(公告)号：US07259400B1
公开(公告)日：2007-08-21
申请号：US10842399
申请日：2004-05-10
申请人： Nikhil R. Taskar
发明人： Nikhil R. Taskar
IPC分类号： H01L33/00
CPC分类号： H01L33/502 , H01L33/44 , H01L33/54
摘要： A photonic structure for “white” light generation by phosphors under the excitation of a LED. The photonic structure mounts the LED and an optically transparent nanocomposite matrix having dispersed therein phosphors which will emit light under the excitation of the radiation of the LED. The phosphors dispersed in the matrix may be nanocrystalline, or larger sized with the addition of non light emitting, non light scattering nanoparticles dispersed within the matrix material so as to match the index of refraction of the matrix material to that of the phosphors. The nanocomposite matrix material may be readily formed by molding and formed into a variety of shapes including lenses for focusing the emitted light. A large number of the photonic structures may be arranged on a substrate to provide even illumination or other purposes.
摘要翻译：在LED的激发下由磷光体产生“白”光的光子结构。光子结构安装LED和具有分散在其中的荧光体的光学透明纳米复合物基体，其将在LED的辐射的激发下发光。分散在基质中的磷光体可以是纳米晶体，或者通过添加分散在基质材料内的非发光的非光散射纳米粒子的尺寸，以使基质材料的折射率与荧光体的折射率相匹配。纳米复合材料基体材料可以容易地通过模塑形成并形成为包括用于聚焦发射光的透镜的各种形状。大量的光子结构可以被布置在基板上以提供均匀的照明或其它目的。

10. 发明授权

US06674837B1 X-ray imaging system incorporating pixelated X-ray source and synchronized detector 失效
标题翻译：包含像素化X射线源和同步检测器的X射线成像系统
公开(公告)号：US06674837B1
公开(公告)日：2004-01-06
申请号：US10172704
申请日：2002-06-14
申请人： Nikhil R. Taskar , Rameshwar Nath Bhargava , Paul J. Patt
发明人： Nikhil R. Taskar , Rameshwar Nath Bhargava , Paul J. Patt
IPC分类号： H01J3500
CPC分类号： A61B6/542 , A61B6/00 , A61B6/4028 , A61B6/4216 , A61B6/482 , G01T1/2928 , H01J2235/068 , Y10S977/928
摘要： An X-ray imaging system utilizing a pixelated X-ray source and a X-ray imaging detector operated synchronously. The imaging system may be used in industrial and medical applications. The X-ray source and X-ray detector are synchronized such that a corresponding area of the X-ray detector is activated when the corresponding area of the X-ray source is emitting X-rays. Synchronized and adaptive emission and detection of the X-rays results in scatter rejection, improved image quality, and optimum exposure and dose reduction.
摘要翻译：使用像素化X射线源的X射线成像系统和同步运行的X射线成像检测器。成像系统可用于工业和医疗应用。 X射线源和X射线检测器被同步，使得当X射线源的相应区域发射X射线时，X射线检测器的相应区域被激活。 X射线的同步和自适应发射和检测导致散射抑制，改善的图像质量以及最佳的曝光和剂量降低。

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