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81. 发明授权

US06255225B1 Method of forming a resist pattern, a method of manufacturing semiconductor device by the same method, and a device and a hot plate for forming a resist pattern 失效
标题翻译：形成抗蚀剂图案的方法，通过相同的方法制造半导体器件的方法以及用于形成抗蚀剂图案的器件和热板
公开(公告)号：US06255225B1
公开(公告)日：2001-07-03
申请号：US09359734
申请日：1999-07-23
申请人： Yoshiaki Yamada , Eiichi Ishikawa
发明人： Yoshiaki Yamada , Eiichi Ishikawa
IPC分类号： H01L21302
CPC分类号： H01L21/0274 , G03F7/091 , H01L21/312
摘要： A method of forming a resist pattern and a method of manufacturing a semiconductor device using the method of forming the resist pattern, characterized in that a surface of an organic base coating 3 formed on an etched film 2 is reformed depending on properties of a material of a resist film 4, whereby, in dual processes for forming a lower layer of the organic coating provided to process the etched film, an amount of usable resist is increased and an accuracy of dimensions of the etched film after processing can be improved.
摘要翻译：一种形成抗蚀剂图案的方法和使用形成抗蚀剂图案的方法制造半导体器件的方法，其特征在于，形成在蚀刻膜2上的有机基底涂层3的表面根据材料的性质进行重整抗蚀剂膜4，由此，在用于形成用于处理蚀刻膜的有机涂层的下层的双重工艺中，可用抗蚀剂的量增加，并且可以提高加工后的蚀刻膜的尺寸精度。

82. 发明授权

US06241859B1 Method of forming a self-aligned refractory metal silicide layer 失效
$Method of forming a self-aligned refractory metal silicide layer$
标题翻译：形成自对准难熔金属硅化物层的方法
公开(公告)号：US06241859B1
公开(公告)日：2001-06-05
申请号：US09138572
申请日：1998-08-24
申请人： Yoshiaki Yamada , Yoshihisa Matsubara , Takashi Ishigami
发明人： Yoshiaki Yamada , Yoshihisa Matsubara , Takashi Ishigami
IPC分类号： C23C1434
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28562 , H01L29/456 , H01L29/4933 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method of forming a silicide layer on a silicon region. The method comprises the following steps. A first refractory metal layer is formed on the silicon region. The first refractory metal layer is made of a first refractory metal. A second refractory metal layer is formed on the first refractory metal layer. The second refractory metal layer is made of a second refractory metal and containing nitrogen. The second refractory metal layer has a film stress of not higher than 1×1010 dyne/cm2. A heat treatment is carried out in a first atmosphere substantially free of nitrogen so as to cause a silicidation of a lower region of the first refractory metal layer, whereby a C49-structured refractory metal silicide layer is formed on the silicon region.
摘要翻译：本发明提供一种在硅区上形成硅化物层的方法。该方法包括以下步骤。在硅区域上形成第一难熔金属层。第一耐火金属层由第一耐火金属制成。在第一难熔金属层上形成第二难熔金属层。第二耐火金属层由第二难熔金属制成并含有氮。第二难熔金属层的膜应力不高于1×10 10达因/ cm 2。在基本上不含氮的第一气氛中进行热处理，以使第一难熔金属层的下部区域发生硅化，由此在硅区域上形成C49结构的难熔金属硅化物层。

83. 发明授权

US06130154A Semiconductor device and fabrication process thereof 失效
标题翻译：半导体器件及其制造工艺
公开(公告)号：US06130154A
公开(公告)日：2000-10-10
申请号：US49931
申请日：1998-03-30
申请人： Takashi Yokoyama , Yoshiaki Yamada , Koji Kishimoto
发明人： Takashi Yokoyama , Yoshiaki Yamada , Koji Kishimoto
IPC分类号： H01L21/28 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/4763 , H01L21/31
CPC分类号： H01L21/02131 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31629 , H01L21/76829 , H01L21/76834 , H01L21/76837 , H01L2924/0002
摘要： A semiconductor device with satisfactory bonding avility of a plasma SiOF oxide layer on a wiring and satisfactory burying ability for buring wiring space portions. The semiconductor device is deposited by forming a metal layer to be a base of wiring on a semiconductor substrate, forming an anti-reflection layer of a refractory metal or compound thereof, on the metal layer, and forming an insulation layer on the anti-reflection layer. There after, the insulation layer is patterned and a wiring is patterned by etching the anti-reflection layer and the metal layer to be the base of the wiring with taking the patterned insulation layer as a mask with leasing the anti-reflection layer and the insulation layer on the wiring. Subsequently, the patterned wiring is buried with an SiOF layer as an Si oxide layer containing fluorine, together with the anti-reflection layer and the insulation layer on the upper surface.
摘要翻译：一种半导体器件，其具有令人满意的等离子体SiOF氧化物层的接合能力，并且具有良好的掩埋布线空间部分的掩埋能力。通过在半导体衬底上形成作为布线基底的金属层，在金属层上形成难熔金属或其化合物的抗反射层，并在抗反射层上形成绝缘层来沉积半导体器件层。之后，对绝缘层进行图案化，并且通过将抗反射层和金属层作为布线的基底进行蚀刻，以图案化的绝缘层为掩模，通过将抗反射层和绝缘体布线上的层。接着，将图案化的布线与上部表面上的防反射层和绝缘层一起作为包含氟的SiO 2层作为Si氧化物层进行掩埋。

84. 发明授权

US6093637A Method of making a multi-layer interconnection structure 失效
标题翻译：制作多层互连结构的方法
公开(公告)号：US6093637A
公开(公告)日：2000-07-25
申请号：US946786
申请日：1997-10-08
申请人： Koji Kishimoto , Yoshiaki Yamada
发明人： Koji Kishimoto , Yoshiaki Yamada
IPC分类号： H01L21/31 , H01L21/3105 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/31612 , H01L21/76801 , H01L21/76828 , H01L21/76837 , H01L23/5329 , H01L21/31055 , H01L2924/0002
摘要： A multi-layer interconnection structure in a semiconductor device has a interlevel dielectric layer of three SiO.sub.2 films. The first SiO.sub.2 film has a small thickness not lower than 25 nm and is formed by a dual-frequency plasma enhanced CVD process using alkoxysilane as a reactive gas. The second SiO.sub.2 film has a large thickness ranging between 300 and 800 nm and is formed on the first SiO.sub.2 film by an atmospheric pressure CVD process using a mixture of alkoxysilane and ozone as a reactive gas. The third SiO.sub.2 film has a thickness of 50 nm and is flattened by an etch-back process of the same together with an overlying sacrificial spin-on glass film. A second layer interconnect pattern is formed on or above the flattened third SiO.sub.2 film with an excellent reliability.
摘要翻译：半导体器件中的多层互连结构具有三个SiO 2膜的层间电介质层。第一SiO 2膜具有不小于25nm的小厚度，并且通过使用烷氧基硅烷作为反应气体的双频等离子体增强CVD工艺形成。第二SiO 2膜具有在300和800nm之间的大厚度，并且通过使用烷氧基硅烷和臭氧的混合物作为反应气体的大气压CVD法在第一SiO 2膜上形成。第三SiO 2膜具有50nm的厚度，并且通过其上的牺牲旋涂玻璃膜的回蚀工艺被平坦化。第二层互连图案形成在平坦化的第三SiO 2膜上或上方，具有优异的可靠性。

85. 发明授权

US6058764A Analytical apparatus, liquid chromatography analyzer and a method therefor 有权
标题翻译：分析装置，液相色谱分析仪及其方法
公开(公告)号：US6058764A
公开(公告)日：2000-05-09
申请号：US152697
申请日：1998-08-24
申请人： Yoshiaki Yamada , Kiyotoshi Mori , Masato Fukuda
发明人： Yoshiaki Yamada , Kiyotoshi Mori , Masato Fukuda
IPC分类号： G01N35/00 , G01N1/36 , G01N30/02 , G01N30/06 , G01N30/86 , G01N30/88 , B01D15/08 , G01N1/10
CPC分类号： G01N30/8651 , G01N2030/8804 , G01N30/06 , G01N30/8658 , G01N30/8696
摘要： A reliable analytical apparatus is provided which can produce a highly reliable analytical Value on the basis of data entered during manual sample preparation which can be easily traced and used in editing of the analytical result of the analyzer because they are stored in association with the results of measurements by the analyzer. The analytical apparatus has an input device for inputting sample preparation procedures through the display screen, and various computations based on weighed quantities, constant dilution volume and so on entered during the manual preparation, which are automatically executed so as to eliminate human error.
摘要翻译：提供了一种可靠的分析仪器，可根据手动样品制备过程中输入的数据生成高度可靠的分析值，可以轻松追踪并用于编辑分析仪的分析结果，因为它们与由分析仪进行测量。分析装置具有用于通过显示屏输入样品制备程序的输入装置，以及在手动制备期间输入的称重量，恒定稀释体积等的各种计算，其被自动执行以消除人为错误。

86. 发明授权

US5997398A Semiconductor wafer storage apparatus and semiconductor device fabricating apparatus using said apparatus 失效
标题翻译：半导体晶片储存装置和使用该装置的半导体装置制造装置
公开(公告)号：US5997398A
公开(公告)日：1999-12-07
申请号：US634316
申请日：1996-04-18
申请人： Yoshiaki Yamada , Hiroshi Watanabe
发明人： Yoshiaki Yamada , Hiroshi Watanabe
IPC分类号： F24F7/06 , H01L21/02 , H01L21/677 , F24F3/16
CPC分类号： F24F3/1607 , H01L21/67769 , Y10S414/135
摘要： A semiconductor wafer storage apparatus includes a wafer storage unit main body and a gas supply unit with a chemical filter, the gas supply unit being arranged independently of the wafer storage unit.
摘要翻译：半导体晶片存储装置包括晶片存储单元主体和具有化学过滤器的气体供给单元，气体供给单元独立于晶片存储单元而布置。

87. 发明授权

US5811666A Apparatus and method for chromatographic analysis using pressure changes to identify the sample 失效
标题翻译：使用压力变化进行色谱分析的装置和方法来鉴定样品
公开(公告)号：US5811666A
公开(公告)日：1998-09-22
申请号：US728374
申请日：1996-10-09
申请人： Yoshiaki Yamada
发明人： Yoshiaki Yamada
IPC分类号： G01N30/32 , G01N30/34 , G01N30/86 , B01D15/08
CPC分类号： G01N30/32
摘要： A method for chromatographic analysis wherein an eluent is fed by a pump and a sample is injected into the eluent from a sample injector, while the composition of the eluent is changed over time. A mixture of the eluent and the sample is passed through a column, and identification of the sample is performed based on separation of the sample into components in the column. The pressure of the eluent in a feed path is detected, a pressure depending on the composition of the eluent is obtained as a reference and the detected pressure is compared with the obtained pressure. Such a comparison enables abnormality in an apparatus for liquid chromatographic analysis to be easily detected. The apparatus for carrying out the chromatographic analysis includes a pressure sensor for detecting the pressure of the eluent in a feed path, a pressure memory for storing the pressure values detected at certain time intervals from the start of measurement as a data file of pressure transition data for each sample, a selector for, when an unknown sample is measured, selecting the pressure transition data, which is to be compared as a reference, from data files store beforehand, and a comparator for comparing the pressure values of the unknown sample detected by the pressure sensor and the values of the pressure transition data selected by the selector and determining an agreement between both the values.
摘要翻译：用于色谱分析的方法，其中通过泵进料洗脱液，并将样品从样品注射器注入洗脱液中，同时洗脱液的组成随时间而改变。将洗脱液和样品的混合物通过柱，并且基于将样品分离成柱中的组分进行样品的鉴定。检测进料路径中的洗脱液的压力，得到取决于洗脱液的组成的压力作为参考，将检测的压力与获得的压力进行比较。这样的比较可以容易地检测用于液相色谱分析的装置中的异常。用于进行色谱分析的装置包括用于检测进料路径中的洗脱液的压力的压力传感器，用于存储从测量开始以某个时间间隔检测的压力值作为压力转换数据的数据文件的压力存储器对于每个样本，选择器，当测量未知样本时，从预先存储的数据文件中选择要作为参考比较的压力转换数据，以及用于比较由未检测到的未知样本的压力值的比较器，压力传感器和由选择器选择的压力转换数据的值，并确定两个值之间的一致性。

88. 发明授权

US5744016A Sputtering apparatus 失效
标题翻译：溅射装置
公开(公告)号：US5744016A
公开(公告)日：1998-04-28
申请号：US782301
申请日：1997-01-16
申请人： Yoshiaki Yamada , Toshiki Shinmura
发明人： Yoshiaki Yamada , Toshiki Shinmura
IPC分类号： C23C14/34 , C23C14/00 , C23C14/35 , H01J37/34 , H01L21/203
CPC分类号： C23C14/0068 , C23C14/35 , H01J37/3408 , H01J37/3441 , H01J37/3447
摘要： A magnetron sputtering electrode 2 is attached to a vacuum chamber 1 to make it retain a Ti target 4 via a back plate 3. A substrate 9 is loaded on a substrate holder 8 provided at a lower portion of the vacuum chamber 1. A collimation plate 6 is provided between the substrate 9 and the Ti target 4 to pass through only the sputtered particles advancing in the vertical direction, and, at its outside, shield plates 5, 7 are provided. The shield plate 5 at the target side is shaped in a wave form and thus its surface area is increased so that nitrogen can be adsorbed as much as possible.
摘要翻译：磁控溅射电极2附接到真空室1，以使其通过背板3保持Ti靶4.衬底9被装载在设置在真空室1的下部的衬底保持器8上。准直板 6设置在基板9和Ti靶4之间，仅穿过在垂直方向前进的溅射颗粒，并且在其外侧设置有屏蔽板5,7。目标侧的屏蔽板5成形为波形，因此其表面积增加，使得氮尽可能地被吸附。

89. 发明授权

US5543357A Process of manufacturing a semiconductor device by filling a via hole in an interlayered film of the device with wiring metal 失效
标题翻译：通过用布线金属填充器件的层间膜中的通孔来制造半导体器件的工艺
公开(公告)号：US5543357A
公开(公告)日：1996-08-06
申请号：US351679
申请日：1994-12-08
申请人： Yoshiaki Yamada , Nobukazu Ito , Kuniko Miyakawa , Michiko Yamanaka
发明人： Yoshiaki Yamada , Nobukazu Ito , Kuniko Miyakawa , Michiko Yamanaka
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76882 , Y10S438/913
摘要： The present invention discloses a process for manufacturing a semiconductor device in which characteristics of an aluminum alloy film are prevented from deteriorating, when a titanium film is used as an under film and the aluminum alloy film is heated to fill a via hole therewith. Interlayered insulating film is formed on a first aluminum wire, and after the formation of a via hole which reaches the first aluminum wire, a titanium film and an aluminum alloy film are formed in turn by a sputtering process. Next, a silicon substrate is heated up to 450.degree. to 500.degree. C. to melt the aluminum alloy film, thereby filling the via hole therewith. In this case, the thickness of the titanium film is set to 10% or less of the thickness of the aluminum alloy film and at most 25 nm. In particular, in the case of the aluminum alloy film containing no silicon, the thickness of the titanium film is set to 5% or less of the thickness of the aluminum alloy film, whereby the deterioration of characteristics of the aluminum alloy film by titanium can be minimized, and the via hole can be surely filled therewith.
摘要翻译：本发明公开了一种用于制造半导体器件的方法，其中当将钛膜用作底膜并且铝合金膜被加热以填充通孔时，防止铝合金膜的特性劣化。在第一铝线上形成层间绝缘膜，在形成到达第一铝线的通孔后，通过溅射工艺依次形成钛膜和铝合金膜。接着，将硅衬底加热至450℃至500℃以熔化铝合金膜，由此填充通孔。在这种情况下，将钛膜的厚度设定为铝合金膜的厚度的10％以下，至多25nm。特别地，在不含硅的铝合金膜的情况下，钛膜的厚度设定为铝合金膜的厚度的5％以下，由此钛合金膜的特性劣化可以将通孔确定地填满。

90. 发明授权

US5512170A Liquid chromatograph 失效
标题翻译：液相色谱仪
公开(公告)号：US5512170A
公开(公告)日：1996-04-30
申请号：US356751
申请日：1994-12-15
申请人： Yoshiaki Yamada , Hironori Kaji
发明人： Yoshiaki Yamada , Hironori Kaji
IPC分类号： G01N1/00 , G01N30/02 , G01N30/16 , G01N30/20 , G01N30/24 , G01N30/88 , B01D15/08
CPC分类号： G01N35/1097 , G01N30/24 , G01N2030/027 , G01N2030/8804 , G01N30/16 , G01N30/20
摘要： The volume of the sample added to the sample retainer and the capacity of the sample retainer are compared, and the less one is stored as volume of the sample injected to a sample separating column. If the volume of the sample added to the sample retainer is more than the capacity of the sample retainer, accordingly, the capacity of the sample retainer is stored.
摘要翻译：比较添加到样品保持器中的样品的体积和样品保持器的容量，并将较少的样品作为样品注入样品分离柱的体积存储。如果添加到样品保持器中的样品的体积大于样品保持器的容量，则存储样品保持器的容量。

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